Transistors SMD Type NPN Transistors 2SC2734-HF SOT-23-3 Unit: mm ■ Features 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 1 ● Pb−Free Package May be Available. The G−Suffix Denotes a 0.55 ● Collector Emitter Voltage VCEO=11V +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● Collector Current Capability IC=50mA 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1.1 +0.2 -0.1 Pb−Free Lead Finish 1. Base 0-0.1 +0.1 0.68 -0.1 2. Emitter 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 11 Emitter - Base Voltage VEBO 3 Unit V Collector Current - Continuous IC 50 mA Collector Power Dissipation PC 150 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 mA， RBE =∞ 11 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 3 Collector-base cut-off current ICBO VCB= 20 V , IE= 0 0.5 Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 V Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB=5mA 0.7 Base - emitter saturation voltage VBE(sat) IC=10 mA, IB=5mA 1.2 DC current gain hFE VCE= 10V, IC= 5mA Conversion gain CG VCC = 6 V, IC = 2 mA, f=900 MHz, fOSC = 930 MHz (0dBm), fout = 30 MHz 15 NF VCC = 6 V, IC = 2 mA, f=900 MHz, fOSC = 930 MHz (0dBm), fout = 30 MHz 9 Noise figure Oscillating output voltage VOSC Collector output capacitance Cob Transition frequency fT 20 uA V 200 dB VCC = 6 V, IC = 5 mA,f = 930 MHz 140 VCB= 10V, IE= 0,f=1MHz VCE= 10V, IC= 10mA Unit mV 1.5 1.4 3.5 pF GHz ■ Classification of hfe Type 2SC2734-GC-HF 2SC2734-R25-HF Range 20-200 100-200 Marking GC F R25. F www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SC2734-HF 150 Maximum Collector Dissipation Curve 100 50 0 DC Current Transfer Ratio vs. Collector Current 200 DC Current Transfer Ratio hFE Collector Power Dissipation PC (mW) ■ Typical Characterisitics 120 80 40 0 50 100 150 Ambient Temperature Ta (。 C) VCE = 10 V 160 1 3 2 1 Reverse Transfer Capacitance Cre (pF) 0 2 VCE = 10 V 4 1 2 5 10 20 Collector Current IC (mA) 50 Reverse Transfer Capacitance vs. Collector to Base Voltage 2.0 f = 1 MHz Emitter Common 1.6 1.2 0.8 0.4 0 1 2 5 10 20 50 Collector to Base Voltage VCB (V) www.kexin.com.cn 50 Collector Output Capacitance vs. Collector to Base Voltage 2.0 f = 1 MHz IE = 0 1.6 1.2 0.8 0.4 0 1 20 Conversion Gain CG (dB) Gain Bandwidth Product fT (GHz) 5 Collector Output Capacitance Cob (pF) Gain Bandwidth Product vs. Collector Current 2 5 10 20 Collector Current IC (mA) 16 12 2 5 10 20 50 Collector to Base Voltage VCB (V) Conversion Gain vs. Collector Current VCC = 6 V f = 900 MHz fosc = 930 MHz (0 dBm) fout = 30 MHz 8 4 0 2 4 6 8 Collector Current IC (mA) 10 Transistors SMD Type NPN Transistors 2SC2734-HF ■ Typical Characterisitics 20 Oscillating Output Voltage VOSC (mV) Noise Figure vs. Collector Current 12 8 VCC = 6 V f = 900 MHz fosc = 930 MHz (0 dBm) fout = 30 MHz 1 2 3 4 Collector Current IC (mA) Oscillating Output Voltage VOSC (mV) 0 200 Oscillating Output Voltage vs. Supply Voltage 80 120 80 IC = 5 mA f = 930 MHz 2 4 6 8 Supply Voltage VCC (V) VCC = 6 V f = 930 MHz 40 2 4 6 8 Collector Current IC (mA) 2nd I.M. Distortion vs. Collector Current 40 30 20 10 0 10 10 VCC = 10 V f1 = 600 MHz f2 = 650 MHz f2nd IM = 1,250 MHz Vout = 103 dBµ 4 8 12 16 Collector Current IC (mA) 20 3rd I.M. Distortion vs. Collector Current 70 f = 700 MHz 60 Power Gain vs. Frequency 12 550 MHz 50 VCC = 10 V f1 = 600 MHz f2 = 650 MHz f3rd IM = 550 MHz 700 MHz Vout = 103 dBµ 40 30 20 160 50 120 40 200 0 160 0 3rd I.M. Distortion 3rd I.M.D. (dB) 5 2nd I.M. Distortion 2nd I.M.D. (dB) 4 Power Gain PG (dB) Noise Figure NF (dB) 16 Oscillating Output Voltage vs. Collector Current 0 4 8 12 16 Collector Current IC (mA) 20 8 4 VCC = 10 V IC = 10 mA Pin = –30 dBm 0 –4 400 500 600 700 800 900 Frequency fT (MHz) 1,000 www.kexin.com.cn 3