JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) SOT–23 FEATURES z z z High Collector Current Complementary To S9013 Excellent hFE Linearity 1. BASE 2. EMITTER MARKING: 2T1 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Collector-base breakdown voltage V(BR)CBO IC=-0.1mA, IE=0 conditions Min -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 uA Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 uA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 uA DC current gain hFE VCE=-1V, IC=-50mA 120 Typ Max Unit 400 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -1.2 V Transition frequency fT Collector output capacitance Cob VCE=-6V,IC=-20mA, f=30MHz VCB=-10V, IE=0, f=1MHz 150 MHz 5 pF CLASSIFICATION OF hFE RANK L H J RANGE 120-200 200-350 300-400 B,Nov,2011 Typical Characterisitics Static Characteristic -100 (mA) -350uA IC IC Ta=100℃ hFE DC CURRENT GAIN -250uA -60 —— COMMON EMITTER VCE=-1V COMMON EMITTER Ta=25℃ -300uA COLLECTOR CURRENT hFE 400 -400uA -80 S9012 -200uA -150uA -40 -100uA 300 Ta=25℃ 200 100 -20 IB=-50uA 0 -0 -4 -8 -12 -16 COLLECTOR-EMITTER VOLTAGE VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1000 —— VCE -10 IC VBEsat -1.2 Ta=25℃ -10 -500 -100 COLLECTOR CURRENT (V) Ta=100℃ -100 -1 -20 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) -0 IC (mA) IC —— Ta=25℃ -0.8 Ta=100℃ -0.4 β=10 -1 -1 -10 COLLECTOR CURRENT fT 500 IC -1 (mA) -10 -100 COLLECTOR CURRENT —— IC 100 Cob/ Cib —— IC (MHz) -500 (mA) VCB/ VEB f=1MHz IE=0/ IC=0 VCE=-6V o Ta=25 C Ta=25℃ Cob CAPACITANCE C TRANSITION FREQUENCY (pF) fT Cib 100 -5 -10 -100 COLLECTOR CURRENT Pc 400 COLLECTOR POWER DISSIPATION Pc (mW) β=10 -0.0 -500 -100 —— IC (mA) 10 1 -0.1 -1 REVERSE VOLTAGE -10 V -20 (V) Ta 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150 B,Nov,2011