2SK1151(L), 2SK1151(S) 2SK1152(L), 2SK1152(S) Silicon N Channel MOS FET REJ03G0907-0200 (Previous: ADE-208-1245) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A (Package name: DPAK(L)-(1)) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain G 1 2 3 S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 7 2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS 2SK1151 2SK1152 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Ratings 450 500 ±30 1.5 6 1.5 20 150 –55 to +150 VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Drain to source breakdown 2SK1151 voltage 2SK1152 Gate to source breakdown voltage Gate to source leak current 2SK1151 Zero gate voltage drain current 2SK1152 V(BR)GSS IGSS Gate to source cutoff voltage 2SK1151 Static drain to source on state resistance 2SK1152 RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF Body to drain diode reverse recovery time Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 7 V(BR)DSS IDSS VGS(off) trr Min 450 500 Typ — Max — Unit V Test conditions ID = 10 mA, VGS = 0 ±30 — — — — — — ±10 100 V µA µA 2.0 — — 0.6 — — — — — — — — — — 3.5 4.0 1.1 160 45 5 5 10 20 10 1.0 220 3.0 5.5 6.0 — — — — — — — — — — V Ω IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 1 A, VGS = 10 V *3 S pF pF pF ns ns ns ns V ns ID = 1 A, VDS = 20 V *3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 1 A, VGS = 10 V, RL = 30 Ω IF = 1.5 A, VGS = 0 IF = 1.5 A, VGS = 0, diF/dt = 100 A/µs 2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area ra C 0.1 25 °C ) 2SK1151 2SK1152 1 100 10 1,000 Typical Output Characteristics Typical Transfer Characteristics 2.0 15 V 5V Drain Current ID (A) 6V 10 V Pulse Test 0.8 4V 0.4 VDS = 20 V Pulse Test 1.6 1.2 0.8 –25°C 75°C 0.4 VGS = 3.5 V 4 8 12 TC = 25°C 16 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 20 Pulse Test 16 12 2A 8 1A 4 ID = 0.5 A 4 8 12 16 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 7 20 Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) = Drain to Source Voltage VDS (V) 4.5 V 0 (T 0.01 150 1.2 0 ) ot Sh n (1 tio 0.3 Case Temperature TC (°C) 2.0 1.6 100 s s Drain Current ID (A) pe m Channel Dissipation Pch (W) O Ta = 25°C 50 m 10 C 0.03 0 Drain Current ID (A) D µs µs 0 1 = 10 1.0 10 PW 20 10 3 O a pe by rea rat R is ion DS lim in (o i t n) ted his 10 30 100 50 Pulse Test VGS = 10 V 20 10 15 V 5 2 1 0.05 0.1 0.2 0.5 1.0 Drain Current ID (A) 2 5 2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S) Forward Transfer Admittance yfs (S) Static Drain-Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature 10 ID = 2 A 8 VGS = 10 V Pulse Test 6 1A 0.5 A 4 2 0 –40 0 40 80 120 160 VDS = 20 V Pulse Test 2 1.0 TC = 25°C 0.5 75°C 0.2 0.1 0.1 0.5 0.2 Typical Capacitance vs. Drain to Source Voltage 1,000 di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test 50 5 VGS = 0 f = 1 MHz Ciss 100 Coss 10 20 Crss 0.1 0.2 0.5 1.0 2 1 5 0 Reverse Drain Current IDR (A) 16 12 300 VGS 8 200 VDD = 400 V 250 V 100 V 100 2 4 ID = 1.5 A 6 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 7 8 40 50 4 0 10 • VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% • 50 Switching Time t (ns) 250 V 400 V 30 100 20 100 V VDS 20 Switching Characteristics Gate to Source Voltage VGS (V) 500 10 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 0 2 Body to Drain Diode Reverse Recovery Time 100 400 1.0 Drain Current ID (A) 200 10 0.05 Drain to Source Voltage VDS (V) –25°C Case Temperature TC (°C) Capacitance C (pF) Reverse Recovery Time trr (ns) 5 0.05 1,000 500 Forward Transfer Admittance vs. Drain Current td (off) 20 tf 10 td (on) 5 tr 2 1 0.05 0.1 0.2 0.5 1.0 Drain Current ID (A) 2 5 2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 2.0 Pulse Test 1.6 1.2 0.8 0.4 5 V, 10 V VGS = 0, –10 V 0 0.4 0.8 1.2 1.6 2.0 Normalized Transient Thermal Impedance γS (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 0.1 0.05 θch–c(t) = γS (t) • θch–c θch–c = 6.25°C/W, TC = 25°C 0.02 PDM 0.03 D= lse 0.01 ot Pu h 1S 0.01 10 µ PW PW T T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveforms Vin Monitor 90 % Vout Monitor Vin D.U.T 10 % RL Vout 50 Ω Vin = 10 V Rev.2.00 Sep 07, 2005 page 5 of 7 . VDD =. 30 V td (on) 10 % 90 % tr 10 % 90 % td (off) tf 2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S) Package Dimensions RENESAS Code Package Name MASS[Typ.] PRSS0004ZD-A DPAK(L)-(1) / DPAK(L)-(1)V 0.42g 1.7 ± 0.5 JEITA Package Code 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 Unit: mm 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 16.2 ± 0.5 1.2 ± 0.3 2.29 ± 0.5 RENESAS Code Package Name MASS[Typ.] SC-63 PRSS0004ZD-C DPAK(S) / DPAK(S)V 0.28g 6.5 ± 0.5 5.4 ± 0.5 (0.1) Unit: mm 2.3 ± 0.2 0.55 ± 0.1 0 – 0.25 2.5 ± 0.5 (1.2) 1.0 Max. 2.29 ± 0.5 Rev.2.00 Sep 07, 2005 page 6 of 7 (5.1) (5.1) (0.1) 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 JEITA Package Code 0.55 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S) Ordering Information Part Name 2SK1151L-E 2SK1151STL-E 2SK1152L-E 2SK1152STL-E Quantity 3200 pcs 3000 pcs 3200 pcs 3000 pcs Shipping Container Box (Sack) Taping Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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