RENESAS 2SK3070

2SK3070(L), 2SK3070(S)
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1063-0900
(Previous: ADE-208-684G)
Rev.9.00
Sep 07, 2005
Features
• Low on-resistance
RDS(on) =4.5 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
D
4
4
1. Gate
2. Drain
3. Source
4. Drain
G
1
1
2
2
3
3
S
Rev.9.00 Sep 07, 2005 page 1 of 8
2SK3070(L), 2SK3070(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID
Ratings
40
±20
75
300
75
50
333
100
150
–55 to +150
ID(pulse) Note1
IDR
IAP Note3
EAR Note3
Pch Note2
Tch
Tstg
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
Static drain to source on state
resistance
RDS(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
Body–drain diode reverse recovery
time
Note:
4. Pulse test
Rev.9.00 Sep 07, 2005 page 2 of 8
trr
Min
40
—
—
1.0
—
—
50
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
4.5
6.5
80
6800
1300
380
130
25
30
60
300
550
400
1.05
90
Max
—
±0.1
10
2.5
5.8
10
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 40 V, VGS = 0
ID = 1 mA, VDS = 10 V Note4
ID = 40 A, VGS = 10 V Note4
ID = 40 A, VGS = 4 V Note4
ID = 40 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 25 V, VGS = 10 V,
ID = 75 A
VGS = 10 V, ID = 40 A,
RL = 0.75 Ω
IF = 75 A, VGS = 0
IF = 75 A, VGS = 0
diF/ dt = 50 A/ µs
2SK3070(L), 2SK3070(S)
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
1000
150
100
50
10
PW
100
=
10
DC ms
Op (1
s
e
(T rati hot)
c = on
25
Operation in
°C
)
this area is
30
10
3
limited by RDS(on)
1
0.3
0
100
50
100
150
0.1 Ta = 25°C
0.1 0.3
1
200
100
Typical Transfer Characteristics
100
4V
5V
Pulse Test
VGS = 10 V
3V
40
20
VDS = 10 V
Pulse Test
80
60
40
75°C
25°C
20
Tc = –25°C
2.5 V
0
2
4
6
8
0
10
1
2
3
4
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
0.4
0.3
ID = 50 A
0.2
20 A
0.1
10 A
4
8
12
16
20
Gate to Source Voltage VGS (V)
Rev.9.00 Sep 07, 2005 page 3 of 8
Static Drain to Source on State Resistance
RDS (on) (mΩ)
Drain to Source Voltage VDS (V)
0.5
0
30
Typical Output Characteristics
Drain Current ID (A)
Drain Current ID (A)
10
Drain to Source Voltage VDS (V)
80
60
3
Case Temperature TC (°C)
3.5 V
Drain to Source Saturation Voltage
VDS (on) (V)
10
µ
0µ s
s
1
m
s
300
Drain Current ID (A)
Channel Dissipation Pch (W)
200
5
100
Pulse Test
50
20
10
VGS = 4 V
5
10 V
2
1
1
3
10
30 100
300 1000
Drain Current ID (A)
Forward Transfer Admittance
vs. Drain Current
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
Static Drain to Source on State Resistance
RDS (on) (mΩ)
2SK3070(L), 2SK3070(S)
20
Pulse Test
16
12
ID = 50 A
VGS = 10 V
8
4
10, 20 A
10, 20, 50 A
4V
0
–50
0
50
100
150
200
VDS = 10 V
Pulse Test
100
50
Tc = –25°C
20
10
25°C
5
75°C
2
1
0.5
0.1
0.3
1
3
10
30
100
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Source Voltage
30000
VGS = 0
f = 1 MHz
Capacitance C (pF)
500
200
100
50
20
100
0.3
1
3
10
30
Coss
1000
Crss
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
20
ID = 75 A
VGS
80
16
VDD = 40 V
25 V
10 V
60
VDS
40
12
8
VDD = 40 V
25 V
10 V
20
0
Ciss
3000
100
0
100
80
160
240
4
320
Gate Charge Qg (nc)
Rev.9.00 Sep 07, 2005 page 4 of 8
0
400
1000
Switching Time t (ns)
10
0.1
10000
300
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
Gate to Source Voltage VGS (V)
Reverse Recovery Time trr (ns)
200
Case Temperature TC (°C)
1000
Drain to Source Voltage VDS (V)
500
td(off)
500
tf
200
tr
100
td(on)
50
20
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
10
0.1 0.2 0.5 1
2
5 10 20
Drain Current ID (A)
50 100
2SK3070(L), 2SK3070(S)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current IDR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
100
10 V
80
5V
60
VGS = 0, –5 V
40
20
Pulse Test
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
500
IAP = 50 A
VDD = 25 V
duty < 0.1 %
Rg > 50 Ω
400
300
200
100
0
25
VSD (V)
50
75
100
125
150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 1.25°C/W, Tc = 25°C
0.1
0.05
PDM
0.02
1
lse
0.0 t pu
o
h
1s
0.03
0.01
10 µ
D=
PW
T
100 µ
1m
10 m
Pulse Width
100 m
1
10
PW (S)
Avalanche Test Circuit
VDS
Monitor
PW
T
Avalanche Waveform
L
EAR =
1
2
• L • IAP2 •
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
D. U. T
VDS
VDD
ID
Vin
15 V
50 Ω
0
Rev.9.00 Sep 07, 2005 page 5 of 8
VDD
2SK3070(L), 2SK3070(S)
Switching Time Test Circuit
Switching Time Waveforms
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vout
Vin
10 V
50 Ω
VDD
= 30 V
10%
10%
90%
td(on)
Rev.9.00 Sep 07, 2005 page 6 of 8
10%
tr
90%
td(off)
tf
2SK3070(L), 2SK3070(S)
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]

PRSS0004AE-A
LDPAK(L) / LDPAK(L)V
1.40g
8.6 ± 0.3
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
RENESAS Code
Package Name
PRSS0004AE-B
LDPAK(S)-(1) / LDPAK(S)-(1)V
0.4 ± 0.1
MASS[Typ.]
Unit: mm
1.30g
(1.5)
10.0
Rev.9.00 Sep 07, 2005 page 7 of 8
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
2.54 ± 0.5
0.2
0.86 +– 0.1
7.8
7.0
2.49 ± 0.2
0.2
0.1 +– 0.1
1.37 ± 0.2
1.3 ± 0.2
7.8
6.6
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
1.7
SC-83
2.49 ± 0.2
11.0 ± 0.5
11.3 ± 0.5
0.3
10.0 +– 0.5
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.86 +– 0.1
JEITA Package Code
Unit: mm
2.2
2SK3070(L), 2SK3070(S)
Ordering Information
Part Name
2SK3070L-E
2SK3070STL-E
Quantity
500 pcs
500 pcs
Shipping Container
Box (Tube)
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.9.00 Sep 07, 2005 page 8 of 8
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Colophon .3.0