JCS24N50H - 吉林华微电子股份有限公司

N 沟道增强型场效应晶体管
N- CHANNEL MOSFET
R
JCS24N50H
主要参数
封装 Package
MAIN CHARACTERISTICS
ID
24 A
VDSS
500 V
Rdson(@Vgs=10V)
0.19Ω
Qg
81nC
用途
APPLICATIONS
z 高频开关电源
z 电子镇流器
z UPS 电源
z High efficiency switch
产品特性
FEATURES
z 低栅极电荷
z 低 Crss (典型值 34pF)
z 开关速度快
z 产品全部经过雪崩测试
z 高抗 dv/dt 能力
z RoHS 产品
z Low gate charge
z Low Crss (typical 34pF )
z Fast switching
z 100% avalanche tested
z Improved dv/dt capability
z RoHS product
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
TO-3PN
TO-247
订货信息 ORDER MESSAGE
印
Order codes
Marking
Package
JCS24N50ANH-O-AN-N-B
JCS24N50ANH
TO-3PN
否
JCS24N50WH-O-W-N-B
JCS24N50WH
TO-247
否
版本:201103A
记
封
装
无卤素
订 货 型 号
Halogen
Free
包
装
器件重量
Packaging
Device
Weight
NO
条管 Tube
5.73g(typ)
NO
条管 Tube
5.20g(typ)
1/9
JCS24N50H
R
ABSOLUTE RATINGS (Tc=25℃)
绝对最大额定值
项
目
符
Parameter
最高漏极-源极直流电压
Drain-Source Voltage
连续漏极电流
Drain Current -continuous
号
Symbol
VDSS
ID
T=25℃
T=100℃
数
值
单
位
Value
Unit
500
V
24.0*
A
14.0*
A
最大脉冲漏极电流(注 1)
Drain Current -pulse (note 1)
IDM
96*
A
最高栅源电压
Gate-Source Voltage
VGSS
±30
V
单脉冲雪崩能量(注 2)
Single Pulsed Avalanche Energy(note 2)
EAS
1760
mJ
雪崩电流(注 1)
Avalanche Current (note 1)
IAR
24.0
A
重复雪崩能量(注 1)
Repetitive Avalanche Current (note 1)
EAR
2.8
mJ
二极管反向恢复最大电压变化速率(注 3)
Peak Diode Recovery dv/dt (note 3)
dv/dt
4.5
V/ns
耗散功率
Power Dissipation
PD
TC=25℃
-Derate
above 25℃
271
W
2.22
W/℃
最高结温及存储温度
Operating and Storage Temperature Range
TJ,TSTG
-55~+150
℃
引线最高焊接温度
Maximum Lead Temperature for Soldering Purposes
TL
300
℃
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
版本:201103A
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JCS24N50H
R
电特性 ELECTRICAL CHARACTERISTIC
项
目
Parameter
符
号
Symbol
测试条件
最小 典型 最 大 单 位
Tests conditions
Min Typ Max Units
关态特性 Off –Characteristics
漏-源击穿电压
Drain-Source Voltage
BVDSS
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBVDSS ID=250μA, referenced to
25℃
/ΔTJ
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
IDSS
正向栅极体漏电流
Gate-body leakage current, forward
反向栅极体漏电流
Gate-body leakage current, reverse
ID=250μA, VGS=0V
500
-
-
-
0.5
-
V/℃
VDS=500V, VGS=0V, TC=25℃
-
-
10
μA
VDS=400V, TC=125℃
-
-
100
μA
IGSSF
VDS=0V, VGS =30V
-
100
nA
IGSSR
VDS=0V, VGS =-30V
-
阈值电压
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
静态导通电阻
Static Drain-Source On-Resistance
RDS(ON) VGS =10V , ID=12.0A
正向跨导
Forward Transconductance
gfs
-
V
-100 nA
通态特性 On-Characteristics
3.0
-
VDS = 40V , ID=12.0A(note 4) -
-
5.0
V
0.16 0.19
Ω
27.5
S
-
动态特性 Dynamic Characteristics
输入电容
Input capacitance
Ciss
输出电容
Output capacitance
Coss
反向传输电容
Reverse transfer capacitance
Crss
版本:201103A
VDS=25V,
VGS =0V,
f=1.0MHZ
-
3100 4160 pF
-
465 620
pF
-
34
pF
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55
JCS24N50H
R
电特性 ELECTRICAL CHARACTERISTICS
项
目
符
Parameter
号
Symbol
测试条件
最小 典型 最大 单位
Tests conditions
Min Typ Max Units
开关特性 Switching –Characteristics
延迟时间 Turn-On delay time
td(on)
上升时间 Turn-On rise time
tr
延迟时间 Turn-Off delay time
VDD=250V,ID=24A,RG=25Ω
(note 4,5)
-
48
105
ns
-
107 225
ns
td(off)
-
165 340
ns
下降时间 Turn-Off Fall time
tf
-
85
180
ns
栅极电荷总量 Total Gate Charge
Qg
-
81
100
nC
栅-源电荷 Gate-Source charge
Qgs
-
20
-
nC
栅-漏电荷 Gate-Drain charge
Qgd
-
30
-
nC
VDS =400V ,
ID=19A
VGS =10V(note 4,5)
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain-Source
Diode Forward Current
IS
-
-
24
A
正向最大脉冲电流
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
-
-
96
A
1.4
V
正向最大连续电流
Maximum Continuous Drain-Source
Diode Forward Current
VSD
反向恢复时间
Reverse recovery time
trr
反向恢复电荷
Reverse recovery charge
Qrr
VGS=0V, IS=24A
-
VGS=0V, IS=24A
dIF/dt=100A/μs (note 4)
530
ns
8.2
μC
热特性 THERMAL CHARACTERISTIC
项
目
Parameter
符
号
Symbol
最大值
单
Value
位
Unit
JCS24N50H
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
0.45
℃/W
结到环境的热阻
Thermal Resistance, Junction to Ambient
Rth(j-A)
40.0
℃/W
注:
Notes:
1:脉冲宽度由最高结温限制
1:Pulse width limited by maximum junction temperature
2:L=5.5mH, IAS=24A, VDD=50V, RG=25 Ω,起始结温
2:L=5.5mH, IAS=24A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
TJ=25℃
3:ISD ≤24A,di/dt ≤200A/μs, VDD≤BVDSS,起始结温 TJ=25℃ 3:ISD ≤24A,di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ=25℃
4:Pulse Test:Pulse Width ≤300μs, Duty Cycle≤2%
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
版本:201103A
5:Essentially independent of operating temperature
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JCS24N50H
R
特征曲线
ELECTRICAL CHARACTERISTICS (curves)
On-Region Characteristics
Transfer Characteristics
2
10
10
10
1
Top
1
ID Drain Current[A]
10
ID Drain Current[A]
15.0V
10.0V
9.0V
8.0V
7.0V
6.5V
6.0V
Bottom 5.5V
2
0
10
150 ℃
-55 ℃
Notes:
1.250μs pulse test
2.TC=25℃
25 ℃
10
-1
10
0
1
10
Note:
1.VDS=20V
2.250μs Pulse Test
10
0
2
4
6
8
10
12
V GS Gate-Source Voltage[V]
VDS Drain-Source Voltage[V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
On-Resistance Variation vs
Drain Current and Gate Voltage
IDR Reverse Drain Current[A]
0.35
RDS (on) [ Ω ]
0.30
10
0.25
V GS=10V
0.20
VGS=20V
0.15
Note :T j=25 ℃
0.10
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
1
150℃
25℃
10
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
VSD Source-Drain voltage[V]
ID [A]
Capacitance Characteristics
7000
Capacitance Characteristics
12
5000
Ciss
4000
3000
*Note:
1.VGS=0V
2.f=1MHz
Coss
2000
1000
Crss
-1
10
0
10
1
10
VDS Drain-Source Voltage [V]
版本:201103A
VDS=400V
10
VGS Gate Source Voltage[V]
Ciss = Cgs +Cgd (Cds =shorted)
Coss = Cds +Cgd
Crss = Cgd
6000
Capacitance [pF]
Note:
1.VGS=0V
2.250μs Pulse Test
VDS=250V
VDS=100V
8
6
4
2
0
0
10
20
30
40
50
60
Qg Toltal Gate Charge [nC]
5/9
70
80
JCS24N50H
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
On-Resistance Variation
Breakdown Voltage Variation
vs. Temperature
vs. Temperature
3.0
1.2
BVDS(Normalized)
2.5
R D(on)(Normalized)
1.1
1.0
0.9
Notes:
1. VGS=0V
2. ID=250μA
0.8
-50
0
50
100
150
2.0
1.5
Notes:
1. VGS=10V
2. ID=12.0A
1.0
0.5
-75
200
-50
-25
0
25
125
150
1ms
1
10
10ms
DC
0
10
25
ID Drain Current [A]
40μs
100μs
100μs
I D Drain Current [A]
100
30
Operation in This Area
is Limited by RDS(ON)
2
75
Maximum Drain Current vs. Case
Temperature
Maximum Safe Operating Area
10
50
Tj [ ℃ ]
Tj [ ℃ ]
20
15
10
Note:
1 TC=25℃
2 TJ=150℃
3 Single Pulse
-1
10
5
0
25
-2
0
1
2
10
10
50
75
100
125
TC Case Temperature [℃ ]
V DS Drain-Source Voltage [V]
(t) Thermal Response
Transient Thermal Response Curve
10
10
0
0 .5
0 .2
0 .1
10
N
1
2
3
-1
0 .0 5
o te s :
Z θ J C (t)= 0 .4 5 ℃ /W M a x
D u ty F a c to r , D = t1 /t2
T J M -T c = P D M * Z θ J C (t)
0 .0 2
JC
10
0 .0 1
Zθ
10
-2
s in g le p u ls e
P DM
t1
t2
t 1 S q u a r e W a v e P u l s e D u r a t io n [ s e c ]
版本:201103A
6/9
150
R
JCS24N50H
外形尺寸 PACKAGE MECHANICAL DATA
TO-3PN
版本:201103A
单位 Unit :mm
7/9
R
JCS24N50H
外形尺寸 PACKAGE MECHANICAL DATA
TO-247
版本:201103A
单位 Unit :mm
8/9
JCS24N50H
R
注意事项
NOTE
1.吉林华微电子股份有限公司的产品销售分
为直销和销售代理,无论哪种方式,订货
时请与公司核实。
2.购买时请认清公司商标,如有疑问请与公
司本部联系。
3.在电路设计时请不要超过器件的绝对最大
额定值,否则会影响整机的可靠性。
4.本说明书如有版本变更不另外告知
1.
Jilin Sino-microelectronics co., Ltd sales its
product either through direct sales or sales
agent , thus, for customers, when ordering ,
please check with our company.
2. We strongly recommend customers check
carefully on the trademark when buying our
product, if there is any question, please
don’t be hesitate to contact us.
3. Please do not exceed the absolute
maximum ratings of the device when circuit
designing.
4. Jilin Sino-microelectronics co., Ltd reserves
the right to make changes in this
specification sheet and is subject to
change without prior notice.
联系方式
CONTACT
吉林华微电子股份有限公司
JILIN SINO-MICROELECTRONICS CO., LTD.
公司地址:吉林省吉林市深圳街 99 号
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel: 86-432-64678411
Fax:86-432-64665812
Web Site: www.hwdz.com.cn
邮编:132013
总机:86-432-64678411
传真:86-432-64665812
网址: www.hwdz.com.cn
HTU
UTH
市场营销部
地址:吉林省吉林市深圳街 99 号
邮编:132013
电话: 86-432-64675588
64675688
64678411-3098/3099
传真: 86-432-64671533
版本:201103A
HTU
UTH
MARKET DEPARTMENT
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel:
86-432-64675588
64675688
64678411-3098/3099
Fax: 86-432-64671533
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