JCS75N75F - 吉林华微电子股份有限公司

N 沟道增强型场效应晶体管
N-CHANNEL MOSFET
R
JCS75N75F
主要参数
MAIN CHARACTERISTICS
ID
VDSS
Rdson(@Vgs=10V)
Qg
封装 Package
75A
75 V
11 mΩ
73 nC
产品用途
z用 于 高 功 率
DC/DC 转换和功
率开关
z 直流电机控制和
D 类放大器
APPLICATIONS
z High efficiency switching
DC/DC converters and
switch mode power supply
z DC Motor control and
Class D Amplifier
产品特性
z 低栅极电荷
z 低CrssB(典型值 55pF)
z 开关速度快
z 产品全部经过雪崩测试
z 高抗 dv/dt 能力
z RoHS 产品
FEATURES
z Low gate charge
z Low Crss(typical 55pF)
z Fast switching
z 100% avalanche tested
z Improved dv/dt capability
z RoHS product
订货信息 ORDER MESSAGE
订 货 型 号
印
Order codes
Marking
Package
JCS75N75CF-O-C-N-B
JCS75N75CF
TO-220C
版本:201303A
记
封
装
无卤素
Halogen Free
否
NO
包
装
Packaging
条管 Tube
器件重量
Device
Weight
2.15 g(typ)
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JCS75N75F
R
绝对最大额定值
ABSOLUTE RATINGS (Tc=25℃)
项
目
符
Parameter
号
Symbol
数
值 Value
单
位
JCS75N75CF
Unit
75
V
最高漏极-源极直流电压
Drain-Source Voltage
VDSS
连续漏极电流
Drain Current-continuous
ID T=25℃
T=100℃
75
A
56
A
最大脉冲漏极电流(注 1)
Drain Current – pulse(note 1)
IDM
300
A
最高栅源电压
Gate-Source Voltage
VGSS
±20
V
1125
mJ
75
A
EAR
20.8
mJ
二极管反向恢复最大电压变化速率(注 3)
Peak Diode Recovery Dv/dt (note 3)
dv/dt
4.9
V/ns
耗散功率
Power Dissipation
PD
TC=25
℃
-Derate
above 25℃
208
W
1.67
W/℃
最高结温及存储温度
Operating and StorageTemperature Range
TJ,TSTG
-55~+150
℃
引线最高焊接温度
Maximum LeadTemperature for Soldering
Purposes
TL
300
℃
B
B
B
B
B
B
B
B
单脉冲雪崩能量(注 2)
EAS
Single Pulsed Avalanche Energy(note 2)
B
雪崩电流(注 1)
Avalanche Current(note 1)
重复雪崩能量(注 1)
Repetitive Avalanche Energy
B
IAR
B
(note 1)
B
B
B
B
B
B
B
B
B
B
B
B
B
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
版本:201303A
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JCS75N75F
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电特性 ELECTRICAL CHARACTERISTICS
项
目
符
Parameter
号
Symbol
测试条件
最大 典型 最 大 单 位
Tests conditions
Min Typ Max Units
关态特性 Off –Characteristics
漏-源击穿电压
Drain-Source Voltage
BVDSS
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/Δ
ID=1mA, referenced to 25℃
TJ
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
IDSS
B
ID=250μA, VGS=0V
B
75
-
-
V
B
-
0.08
-
V/℃
VDS=75V,VGS=0V, TC=25℃
-
-
1
μA
VDS=75V,
-
-
10
μA
nA
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
正向栅极体漏电流
IGSSF
Gate-body leakage current, forward
B
B
B
B
B
B
TC=125℃
B
B
B
VDS=0V,
VGS =20V
-
-
100
VDS=0V,
VGS =-20V
-
-
-100 nA
2.0
-
B
反向栅极体漏电流
IGSSR
Gate-body leakage current, reverse
B
B
B
B
B
B
B
B
通态特性 On-Characteristics
阈值电压
Gate Threshold Voltage
VGS(th)
B
B
静态导通电阻
RDS(ON)
Static Drain-Source On-Resistance
B
正向跨导
Forward Transconductance
gfs
B
VDS = VGS ,
ID=250μA
B
VGS =10V ,
ID=40A
B
B
B
B
B
B
B
B
B
B
-
VDS = 10V , ID=40A(note 4) B
B
B
B
4.0
V
9.0 11.0 mΩ
68
-
S
-
4230
-
pF
-
821
-
pF
-
55
-
pF
B
动态特性 Dynamic Characteristics
输入电容
Input capacitance
Ciss
输出电容
Output capacitance
Coss
反向传输电容
Reverse transfer capacitance
Crss
版本:201303A
B
VDS=25V,
VGS =0V,
f=1.0MHZ
B
B
B
B
B
B
B
B
B
B
B
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JCS75N75F
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电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
td(on)
上升时间 Turn-On rise time
tr
延迟时间 Turn-Off delay time
-
16
ns
-
54
ns
td(off)
-
55
ns
下降时间 Turn-Off Fall time
tf
-
35
ns
栅极电荷总量 Total Gate Charge
Qg
-
73
nC
栅-源电荷 Gate-Source charge
Qgs
-
17
-
nC
栅-漏电荷 Gate-Drain charge
Qgd
-
22
-
nC
B
VDD=38V,ID=40A,RG=25Ω
(note 4,5)
B
B
B
B
B
B
B
B
B
B
B
B
B
B
VDS =30V ,
ID=40A
VGS =10V
(note 4,5)
B
B
B
B
B
B
B
B
B
B
B
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
B
B
正向压降
Drain-Source Diode Forward
Voltage
VSD
反向恢复时间
Reverse recovery time
trr
反向恢复电荷
Reverse recovery charge
Qrr
B
B
B
VGS=0V,
B
B
IS=75A
B
B
B
VGS=0V, IS=40A
dIF/dt=100A/μs
(note 4)
B
B
B
B
B
B
B
-
-
75
A
-
-
300
A
-
-
1.4
V
-
88
-
ns
-
233
-
μC
B
B
B
热特性 THERMAL CHARACTERISTIC
项
目
符
Parameter
最大
Max
号
Symbol
结到管壳的热阻
Thermal Resistance, Junction to Case
单 位
Unit
JCS75N75CF
Rth(j-c)
0.60
℃/W
结到环境的热阻
Rth(j-A)
Thermal Resistance, Junction to Ambient
62.5
℃/W
注释:
Notes:
1:脉冲宽度由最高结温限制
1:Pulse width limited by maximum junction temperature
2:L=10mH, IAS=15A, RG=25 Ω,起始结温TJ=25℃
B
B
B
B
B
B
2:L=10mH, IAS=15A, RG=25 Ω,Starting TJ=25℃
B
3:ISD ≤100A,di/dt ≤100A/μs,VDD≤BVDSS,起始结温
B
B
B
B
B
B
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
B
B
B
B
3:ISD ≤100A,di/dt ≤100A/μs,VDD≤BVDSS, Starting TJ=25℃
B
TJ=25℃
B
B
B
B
B
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
5:基本与工作温度无关
版本:201303A
B
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JCS75N75F
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特征曲线
ELECTRICAL CHARACTERISTICS (curves)
Transfer Characteristics
On-Region Characteristics
VGS
12V
10V
8V
7V
6V
Bottom 5V
VGS=8V
Top
240
300
VGS=7V
240
180
VGS=6V
ID [A]
I D [A]
180
120
120
VGS=5V
60
0
Notes:
1.250μs pulse test
2.VDS=40V
60
Notes:
1. 250μs pulse test
2. TC=25℃
0
5
10
0
15
0
2
4
6
8
10
VGS [V]
V DS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
100
0.040
80
0.030
150℃
I DR [A]
0.025
40A
0.020
60
40
0.015
25℃
0.010
Notes:
250μs pulse test
0.005
0.000
2
4
6
8
10
12
14
20
0
0.4
VGS=0V
0.5
0.6
0.7
VGS [V]
0.8
3
3.5x10
1.1
1.2
3
VDS=15V
VDS=37V
10
VDS=60V
VGS Gate Source Voltage[V]
Ciss = Cgs +Cgd (Cds =shorted)
Coss = Cds +Cgd
Crss = Cgd
3
1.0
Gate Charge Characteristics
12
3
4.5x10
4.0x10
0.9
V S D [V]
Capacitance Characteristics
Capacitance [pF]
RDSON [Ω]
0.035
8
3.0x10
3
2.5x10
6
3
2.0x10
3
1.5x10
4
3
1.0x10
2
2
5.0x10
0.0
-1
10
版本:201303A
0
10
1
10
VDS Drain-Source Voltage [V]
0
0
10
20
30
40
50
Qg Toltal Gate Charge [nC]
60
70
80
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JCS75N75F
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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Breakdown Voltage Variation
vs. Temperature
On-Resistance Variation
vs. Temperature
2.00
1.15
1.75
RDS(on)(Normalized)
BVDSS(Normalized)
1.10
1.05
1.00
1.50
1.25
1.00
Notes:
1. VGS=0V
2. ID=250μA
0.95
0.90
-75
-50
-25
0
25
50
75
100
125
Notes:
1. VGS=10V
2. ID=40A
0.75
150
0.50
-100
175
-50
0
50
Tj [℃ ]
100
150
200
Tj [ ℃ ]
Maximum Safe Operating Area
For JCS75N75CF
Maximum Drain Current
vs. Case Temperature
80
3
10
70
60
ID Drain Current [A]
ID Drain Current [A]
10μs
100μs
2
10
50
1ms
40
10ms
100ms
1
10
0
10
30
DC
Note:
1 TC=25℃
2 TJ=150℃
3 Single Pulse
20
10
Operation in This Area
is Limited by RDS(ON)
0
1
10
2
10
10
VDS Drain-Source Voltage [V]
0
25
50
75
100
125
150
TC Case Temperature [℃]
Transient Thermal Response Curve
D = 0 .5
0 .1
0 .2
N
1
2
3
0 .1
0 .0 5
θ JC
(t) Thermal Response
1
Z
0 .0 2
P
o te s :
Z θ J C(t)= 0 .6 0 ℃ /W M a x
D u ty F a c to r , D = t1 /t2
T J M -T c = P D M * Z θ J C(t)
DM
0 .0 1
1 E -5
t1
s in g le p u ls e
0 .0 1
1 E -4
1 E -3
t2
0 .0 1
0 .1
1
10
t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ]
版本:201303A
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JCS75N75F
外形尺寸 PACKAGE MECHANICAL DATA
TO-220C
版本:201303A
单位 Unit:mm
7/8
JCS75N75F
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注意事项
1.吉林华微电子股份有限公司的产品销售分
为直销和销售代理,无论哪种方式,订货
时请与公司核实。
2.购买时请认清公司商标,如有疑问请与公
司本部联系。
3.在电路设计时请不要超过器件的绝对最大
额定值,否则会影响整机的可靠性。
4.本说明书如有版本变更不另外告知
NOTE
1.
Jilin Sino-microelectronics co., Ltd sales its
product either through direct sales or sales
agent , thus, for customers, when ordering ,
please check with our company.
2. We strongly recommend customers check
carefully on the trademark when buying our
product, if there is any question, please
don’t be hesitate to contact us.
3. Please do not exceed the absolute
maximum ratings of the device when circuit
designing.
4. Jilin Sino-microelectronics co., Ltd reserves
the right to make changes in this
specification sheet and is subject to
change without prior notice.
联系方式
CONTACT
吉林华微电子股份有限公司
JILIN SINO-MICROELECTRONICS CO., LTD.
公司地址:吉林省吉林市深圳街 99 号
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel: 86-432-64678411
Fax:86-432-64665812
Web Site:www.hwdz.com.cn
邮编:132013
总机:86-432-64678411
传真:86-432-64665812
网址:www.hwdz.com.cn
市场营销部
地址:吉林省吉林市深圳街 99 号
邮编:132013
电话: 86-432-64675588
64675688
64678411
传真: 86-432-64671533
版本:201303A
MARKET DEPARTMENT
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel:
86-432-64675588
64675688
64678411
Fax: 86-432-64671533
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