JCS13N50C - 吉林华微电子股份有限公司

N 沟道增强型场效应晶体管
N- CHANNEL MOSFET
R
JCS13N50C
主要参数
MAIN CHARACTERISTICS
ID
13 A
VDSS
500 V
Rdson(@Vgs=10V)
0.49Ω
Qg
27 nC
封装 Package
用途
APPLICATIONS
 高频开关电源
 电子镇流器
 UPS 电源
 High frequency
产品特性
FEATURES
 低栅极电荷
 低 Crss (典型值 14pF)
 开关速度快
 产品全部经过雪崩测试
 高抗 dv/dt 能力
 RoHS 产品
 Low gate charge
 Low Crss (typical 14pF )
 Fast switching
 100% avalanche tested
 Improved dv/dt capability
 RoHS product
switching mode
power supply
 Electronic ballast
 UPS
订货信息 ORDER MESSAGE
订 货 型 号
Order codes
印
记
Marking
封
装
Package
无卤素
Halogen
Free
包
装
Packaging
器件重量
Device
Weight
JCS13N50CC-O-C-N-B
JCS13N50CC
TO-220C
否
NO
条管 Tube
2.15 g(typ)
JCS13N50FC-O-F-N-B
JCS13N50FC
TO-220MF
否
NO
条管 Tube
2.20 g(typ)
版本:201506C
1/10
JCS13N50C
R
绝对最大额定值
ABSOLUTE RATINGS (Tc=25℃)
项
目
Parameter
符 号
Symbol
最高漏极-源极直流电压
Drain-Source Voltage
数 值
Value
JCS13N50CC
VDSS
连续漏极电流
Drain Current -Continuous
ID
T=25℃
T=100℃
JCS13N50FC
500
单 位
Unit
V
13.0
13.0*
A
8
8*
A
52
52*
A
最大脉冲漏极电流(注 1)
IDM
Drain Current -Pulse (note 1)
最高栅源电压
Gate-Source Voltage
VGSS
±30
V
单脉冲雪崩能量(注 2)
Single Pulsed Avalanche
Energy(note 2)
EAS
840
mJ
雪崩电流(注 1)
Avalanche Current (note 1)
IAR
13.0
A
重复雪崩能量(注 1)
Repetitive Avalanche
(note 1)
EAR
4.8
mJ
二极管反向恢复最大电压变化
速率(注 3)
Peak Diode Recovery dv/dt
(note 3)
dv/dt
4.5
V/ns
耗散功率
Power Dissipation
PD
TC=25℃
-Derate
above 25℃
最高结温及存储温度
Operating and Storage
Temperature Range
TJ,TSTG
引线最高焊接温度
Maximum Lead Temperature
for Soldering Purposes
TL
Energy
190
49
W
1.57
0.39
W/℃
-55~+150
℃
300
℃
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
版本:201506C
2/10
JCS13N50C
R
电特性 ELECTRICAL CHARACTERISTIC
项
目
Parameter
符 号
Symbol
测试条件
Tests conditions
最小 典型 最 大 单 位
Min Typ Max Units
关态特性 Off –Characteristics
漏-源击穿电压
Drain-Source Voltage
BVDSS
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBVDSS ID=250μA, referenced to
/ΔTJ
25℃
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
IDSS
ID=250μA, VGS=0V
500
-
-
-
0.5
-
V/℃
VDS=500V, VGS=0V, TC=25℃
-
-
10
μA
VDS=400V, TC=125℃
-
-
100
μA
正向栅极体漏电流
IGSSF
Gate-body Leakage Current, Forward
VDS=0V, VGS =30V
-
100
nA
反向栅极体漏电流
IGSSR
Gate-body Leakage Current, Reverse
VDS=0V, VGS =-30V
-
-
V
-100 nA
通态特性 On-Characteristics
阈值电压
Gate Threshold Voltage
VGS(th)
静态导通电阻
Static Drain-Source On-Resistance
RDS(ON) VGS =10V , ID=6.5A
-
正向跨导
Forward Transconductance
gfs
-
VDS = VGS , ID=250μA
VDS = 40V , ID=6.5A(note 4)
2.0
-
4.0
V
0.41 0.49
Ω
14
-
S
动态特性 Dynamic Characteristics
输入电容
Input Capacitance
Ciss
输出电容
Output Capacitance
Coss
反向传输电容
Reverse Transfer Capacitance
Crss
版本:201506C
VDS=25V,
VGS =0V,
f=1.0MHZ
-
1870 2155 pF
-
170 225
pF
-
14
pF
20
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JCS13N50C
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电特性 ELECTRICAL CHARACTERISTICS
项
目
Parameter
符 号
Symbol
测试条件
Tests conditions
最小 典型 最大 单位
Min Typ Max Units
开关特性 Switching –Characteristics
延迟时间 Turn-On delay time
td(on)
上升时间 Turn-On rise time
tr
延迟时间 Turn-Off delay time
VDD=250V,ID=13A,RG=25Ω
(note 4,5)
-
70
160
ns
-
145 240
ns
td(off)
-
135 230
ns
下降时间 Turn-Off Fall time
tf
-
45
120
ns
栅极电荷总量 Total Gate Charge
Qg
-
27
35
nC
栅-源电荷 Gate-Source charge
Qgs
-
9
-
nC
栅-漏电荷 Gate-Drain charge
Qgd
-
12
-
nC
VDS =400V ,
ID=13A
VGS =10V(note 4,5)
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain-Source
Diode Forward Current
IS
-
-
13
A
正向最大脉冲电流
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
-
-
52
A
1.5
V
正向最大连续电流
Maximum Continuous Drain-Source
Diode Forward Current
VSD
反向恢复时间
Reverse Recovery Time
trr
反向恢复电荷
Reverse Recovery Charge
Qrr
VGS=0V, IS=13A
-
VGS=0V, IS=13A
dIF/dt=100A/μs (note 4)
400
ns
4.3
μC
热特性 THERMAL CHARACTERISTIC
项
目
Parameter
符 号
Symbol
最大值
Value
JCS13N50CC JCS13N50FC
单 位
Unit
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
0.79
2.55
℃/W
结到环境的热阻
Thermal Resistance, Junction to Ambient
Rth(j-A)
62.5
62.5
℃/W
注 1:脉冲宽度由最高结温限制
注 2:L=9.0mH, IAS=13A, VDD=50V,
Notes:
RG=25 Ω,起始
结温 TJ=25℃
注 3:ISD ≤13A,di/dt ≤200A/μs, VDD≤BVDSS,起始结
温 TJ=25℃
注 4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
1:Pulse width limited by maximum junction temperature
2:L=9.0mH, IAS=13A, VDD=50V, RG=25 Ω,Starting TJ=25℃
3:ISD ≤13A,di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ=25℃
4:Pulse Test:Pulse Width ≤300μs, Duty Cycle≤2%
5:Essentially independent of operating temperature
注 5:基本与工作温度无关
版本:201506C
4/10
JCS13N50C
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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
On-Region Characteristics
Transfer Characteristics
IF vs VF
IR vs VR
Vgs
15.0V
10.0V
9.0V
8.0V
7.0V
6.5V
Buttom : 5.5V
1
10
10
25℃
ID Drain Current[A]
ID Drain Current[A]
Top:
150℃
1
Notes:
1.250μs pulse test
2.VDS=40V
0.1
0
10
0
1
10
10
VDS Drain-Source Voltage[V]
2
IF(AV)
8
10
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
TC
IF(AV)
vs
TC
10
IDR Reverse Drain Current[A]
VGS=10V
0.4
VGS=20V
1
0.2
0
5
10
15
20
150℃
25℃
0.1
0.2
0.3
ID Drain Current [A]
Capacitance Characteristics
IF(AV)
vs
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
VSD Source-Drain voltage[V]
Capacitance Characteristics
TC
IF(AV)
vs
TC
12
VDS=400V
10
VDS=250V
VGS Gate Source Voltage[V]
RDS(on)
Drain-Source On Resistance [Ω]
vs
6
VGS Gate-Source Voltage[V]
On-Resistance Variation vs
Drain Current and Gate Voltage
0.6
4
VDS=100V
8
6
4
2
0
0
版本:201506C
10
20
30
Qg Toltal Gate Charge [nC]
5/10
JCS13N50C
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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Breakdown Voltage Variation
On-Resistance Variation
vs. Temperature
vs. Temperature
3.0
1.2
1.1
R D(on)(Normalized)
BVDS(Normalized)
2.5
1.0
0.9
Notes:
1. VGS=0V
2. ID=250 A
-50
-25
0
25
50
75
100
125
150
Tj [ ℃ ]
2
ID Drain Current [A]
1.0
Notes:
1. VGS=10V
2. ID=6.5A
0.0
-75
-50
-25
0
25
50
75
100
125
150
Tj [ ℃ ]
Maximum Safe Operating Area
For JCS13N50CC
Operation in This Area
is Limited by RDS(ON)
10
1.5
0.5
0.8
-75
2.0
Maximum Safe Operating Area
For JCS13N50FC
10μs
100μs
1
10
1ms
10ms
0
10
DC
100ms
Note:
1 TC=25℃
2 TJ=150℃
3 Single Pulse
-1
10
-2
0
1
10
2
10
3
10
10
VDS Drain-Source Voltage [V]
Maximum Drain Current vs. Case
Temperature
14
12
ID Drain Current [A]
10
10
8
6
4
2
0
25
50
75
100
125
150
TC Case Temperature [℃ ]
版本:201506C
6/10
JCS13N50C
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Transient Thermal Response Curve
For JCS13N50CC
Zθ JC (t) Thermal Response
Transient Thermal Response Curve
For JCS13N50FC
1
D=0.5
0.2
Notes:
1 Zθ JC(t)=2.5℃ /W Max
2 Duty Factor, D=t1/t2
3 TJM-Tc=PDM* Zθ JC(t)
0.1
0.05
0.1
0.02
0.01
PDM
single pulse
t1
0.01
t2
1E-5
1E-4
1E-3
0.01
0.1
1
10
t1 Square Wave Pulse Duration [sec]
版本:201506C
7/10
R
JCS13N50C
外形尺寸 PACKAGE MECHANICAL DATA
TO-220C
版本:201506C
单位 Unit:mm
8/10
R
JCS13N50C
外形尺寸 PACKAGE MECHANICAL DATA
TO-220MF
版本:201506C
单位 Unit:mm
9/10
JCS13N50C
R
注意事项
NOTE
1.吉林华微电子股份有限公司的产品销售分
为直销和销售代理,无论哪种方式,订货
时请与公司核实。
2.购买时请认清公司商标,如有疑问请与公
司本部联系。
3.在电路设计时请不要超过器件的绝对最大
额定值,否则会影响整机的可靠性。
4.本说明书如有版本变更不另外告知
1. Jilin Sino-microelectronics co., Ltd sales its
product either through direct sales or sales
agent , thus, for customers, when ordering ,
please check with our company.
2. We strongly recommend customers check
carefully on the trademark when buying our
product, if there is any question, please
don’t be hesitate to contact us.
3. Please do not exceed the absolute
maximum ratings of the device when circuit
designing.
4. Jilin Sino-microelectronics co., Ltd reserves
the right to make changes in this
specification sheet and is subject to
change without prior notice.
联系方式
CONTACT
吉林华微电子股份有限公司
JILIN SINO-MICROELECTRONICS CO., LTD.
公司地址:吉林省吉林市深圳街 99 号
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel: 86-432-64678411
Fax:86-432-64665812
Web Site: www.hwdz.com.cn
邮编:132013
总机:86-432-64678411
传真:86-432-64665812
网址: www.hwdz.com.cn
HTU
HTU
UTH
市场营销部
地址:吉林省吉林市深圳街 99 号
邮编:132013
电话: 86-432-64675588
64675688
64678411-3098/3099
传真: 86-432-64671533
版本:201506C
UTH
MARKET DEPARTMENT
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel: 86-432-64675588
64675688
64678411-3098/3099
Fax: 86-432-64671533
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