JT040N060WAD

N 沟绝缘栅双极晶体管
N-CHANNEL IGBT
R
IGBT
JT040N060WAD
主要参数
MAIN
封装 Package
CHARACTERISTICS
40A
IC
600 V
VCES
Vcesat(@Vge=15V) 2.4V(type)
用途
APPLICATIONS
 逆变器
 电磁炉
 UPS 电源
 General purpose inverters

Induction heating(IH)
 UPS
产品特性
 低栅极电荷
 FS 技术
 通态压降, VCE(sat), typ
= 2.4V @ IC = 40A
and TC = 25°C
 RoHS 产品
FEATURES
 Low gate charge
 FS Technology
 saturation voltage:
VCE(sat), typ = 2.4V @
IC = 40A and TC = 25°C
 RoHS product
订货信息 ORDER MESSAGE
订 货 型 号
Order codes
JT040N060WAD
版本:201406A
印
记
Marking
JT040N060WAD
封
装
Package
TO-247
无 卤 素
Halogen Free
有卤
No
包
装
Packaging
条管 Tube
器件重量
Device
Weight
6 g(typ)
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绝对最大额定值
ABSOLUTE RATINGS (Tc=25℃)
项
目
Parameter
最高集电极-发射极直流电压
Collector-Emmiter Voltage
Vces
连续集电极极电流
Drain Current-continuous
IC
T=25℃
T=100℃
最大脉冲集电极极电流(注 1)
Collector Current – pulse
(note 1)
最高栅极发射极电压
Gate-Emmiter Voltage
Turn-off safe area
耗散功率
Power Dissipation
数
符 号
Symbol
值 Value
单
位
Unit
JT040N060WAD
600
V
80
A
40
A
ICM
120
A
VGES
±20
V
120
A
290
W
-55~+150
℃
300
℃
PD
TC=25℃
最高结温及存储温度
Operating and Storage
Temperature Range
TJ,T STG
引线最高焊接温度
Maximum Lead
Temperature for Soldering
Purposes
TL
B
B
*漏极电流由最高结温限制
*Collector current limited by maximum junction temperature
版本:201406A
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电特性 ELECTRICAL CHARACTERISTICS
项
目
Parameter
符 号
Symbol
测试条件
Tests conditions
最大 典型 最 大 单 位
Min Typ Max Units
关态特性 Off –Characteristics
集电极-发射极击穿电压
Collector-Emmiter Voltage
BVCES
IC=250μA, VGS=0V
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBVCES/ΔTJ
零栅压下集电极漏电流
Zero Gate Voltage Collector
Current
ICES
600
-
-
V
IC=0.5mA, referenced to
25℃
-
0.6
-
V/℃
VCE=600V,VGE=0V,
TC=25℃
-
-
0.2
mA
2
mA
TC=100℃
TC=150℃
-
-
2.5
mA
nA
正向栅极体漏电流
Gate-body leakage current,
forward
IGESF
VCE=0V, VGE =20V
-
-
100
反向栅极体漏电流
Gate-body leakage current,
reverse
IGESR
VCE=0V, VGE =-20V
-
-
-100 nA
VGE(th)
VCE =VGE , IC=250μA
4.0
-
通态特性 On-Characteristics
阈值电压
Gate Threshold Voltage
饱和压降
Collector-Emmiter saturation
Voltage
VCESAT
短路电流(注 2)
IC(SC)
Short Collector current(Note 2)
VGE=15V IC=40A
Tc=25℃
Tc=125℃
-
VGE=15V VCE=400V tsc﹤
5μs Tc=25℃
6.5
V
2.4 3.0
2.6 -
V
240
A
动态特性 Dynamic Characteristics
输入电容
Input capacitance
Ciss
输出电容
Output capacitance
Coss
反向传输电容
Reverse transfer capacitance
Crss
版本:201406A
VCE=25V,
VGE=0V,
f=1.0MHZ
-
2500
-
pF
-
210
-
pF
-
61
-
pF
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电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
td(on)
上升时间 Turn-On rise time
tr
延迟时间 Turn-Off delay time
VCE=400V,ID=40A,RG=10Ω
TC=25℃ Inductive Load
-
25
ns
-
45
ns
td(off)
-
120
ns
下降时间 Turn-Off Fall time
tf
-
30
ns
Turn-on energy
Eon
1.2
mJ
Turn-off energy
Eoff
0.35
mJ
Total switching energy
Etotal
1.55
mJ
VCE =400V ,
IC=40A
VGE=15V (note 3,4)
Qg
栅极电荷总量 Total Gate Charge Qge
Qgc
-
120
-
nC
-
22
-
nC
-
54
-
nC
反并联二极管特性及最大额定值 Anti-Parallel Diode Characteristics and Maximum Ratings
正向压降
Drain-Source Diode Forward
Voltage
VF
反向恢复时间
Diode Reverse recovery time
trr
反向恢复电荷
Reverse recovery charge
Qrr
VGS=0V,
IS=20A
VGE=0V, IS=20A
dIF/dt=200A/μs
(note 4)
-
1.7 2.6
V
-
45
-
ns
-
70
-
nC
热特性 THERMAL CHARACTERISTIC
项
目
Parameter
最大
Max
符 号
Symbol
单 位
Unit
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
0.41
℃/W
结到环境的热阻
Thermal Resistance, Junction to
Ambient
Rth(j-A)
40
℃/W
注释:
Notes:
1:脉冲宽度由最高结温限制
1:Pulse width limited by maximum junction temperature
2:两次短路之间的间隔大于 1 秒时,允许短路测试
2:Allowed number of short circuits: <1000; time
的次数最大为 1000 次
between short circuits: >1s.
3:脉冲测试:脉冲宽度≤300μs,占空比≤2%
3:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
4:基本与工作温度无关
4:Essentially independent of operating temperature
版本:201406A
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特征曲线
ELECTRICAL CHARACTERISTICS (curves)
Typical Output
Typical Output
Characteristics(Tj=25℃)
Characteristics(Tj=125℃)
Typical Saturation Voltage
Characteristics
Saturation Voltage vs. Case Temperature
at Variant Current Level
版本:201406A
Typical Transfer
Characteristics
Saturation Voltage vs. VGE
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Turn-Off
Saturation
Characteristics
Voltage vs. VGE
vs.
Gate Resistance
Saturation Voltage vs. VGE
Capacitance Characteristics
Gate charge Characteristics
SOA Characteristics
版本:201406A
Turn-on Characteristics vs. Gate
Resistance
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Turn-off Characteristics vs. Gate
Resistance
Turn-off Characteristics vs.
Collector Current
Switching Loss vs. Collector
Current
版本:201406A
JT040N060WAD
Turn-on Characteristics vs.
Collector Current
Switching Loss vs. Gate Resistance
Turn off Switching SOA
Characteristics
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Transient Thermal Impedance
Forward Characteristics
Stored Charge
版本:201406A
Reverse Recovery Current
Reverse Recovery Time
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外形尺寸 PACKAGE MECHANICAL DATA
TO-247
注意事项
1.吉林华微电子股份有限公司的产品销售分
为直销和销售代理,无论哪种方式,订货
时请与公司核实。
2.购买时请认清公司商标,如有疑问请与公
司本部联系。
3.在电路设计时请不要超过器件的绝对最大
额定值,否则会影响整机的可靠性。
4.本说明书如有版本变更不另外告知
版本:201406A
单位 Unit:mm
NOTE
1. Jilin Sino-microelectronics co., Ltd sales its
product either through direct sales or sales
agent , thus, for customers, when ordering ,
please check with our company.
2. We strongly recommend customers check
carefully on the trademark when buying our
product, if there is any question, please
don’t be hesitate to contact us.
3. Please do not exceed the absolute
maximum ratings of the device when circuit
designing.
4. Jilin Sino-microelectronics co., Ltd reserves
the right to make changes in this
specification sheet and is subject to
change without prior notice.
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JT040N060WAD
联系方式
吉林华微电子股份有限公司
CONTACT
JILIN SINO-MICROELECTRONICS CO., LTD.
公司地址:吉林省吉林市深圳街 99 号
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel: 86-432-64678411
Fax:86-432-64665812
Web Site:www.hwdz.com.cn
邮编:132013
总机:86-432-64678411
传真:86-432-64665812
网址:www.hwdz.com.cn
市场营销部
地址:吉林省吉林市深圳街 99 号
邮编:132013
电话: 86-432-64675588
64675688
64678411-3098/3099
传真: 86-432-64671533
版本:201406A
MARKET DEPARTMENT
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel: 86-432-64675588
64675688
64678411-3098/3099
Fax: 86-432-64671533
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