IT120A IT120 IT121 IT122 MONOLITHIC DUAL NPN TRANSISTORS FEATURES Direct Replacement for Intersil IT120 Series Pin for Pin Compatible C1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) IC Collector-Current 10mA Maximum Temperatures Storage Temperature Range -65°C to +150°C Operating Temperature Range -55°C to +150°C Maximum Power Dissipation ONE SIDE E1 B1 E2 B2 BOTH SIDES Device Dissipation TA=25°C 250mW 500mW Linear Derating Factor 2.3mW/°C 4.3W/°C TOP VIEW 26 X 29 MILS ELECTRICAL CHARACTERISTICS TA= 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC IT120A IT120 IT121 IT122 UNITS CONDITIONS BVCBO Collector to Base Voltage 45 45 45 45 MIN. V IC = 10µA IE = 0A BVCEO Collector to Emitter Voltage 45 45 45 45 MIN. V IC = 10µA IB = 0A BVEBO Emitter-Base Breakdown Voltage 6.2 6.2 6.2 6.2 MIN. V IE = 10µA IC = 0A NOTE 2 BVCCO Collector to Collector Voltage 60 60 60 60 MIN. V ICCO = 10µA IB = IE = 0A hFE DC Current Gain 200 200 80 80 MIN. 225 225 100 100 MIN. VCE(SAT) Collector Saturation Voltage 0.5 0.5 0.5 0.5 MAX. V IEBO Emitter Cutoff Current 1 1 1 1 MAX. ICBO Collector Cutoff Current 1 1 1 1 MAX. 2 2 2 2 MAX. 2 2 COBO 3 Output Capacitance 3 IC = 10µA VCE = 5V IC = 1.0mA VCE = 5V IC = 0.5mA IB = 0.05mA nA IC = 0 VEB = 3V nA IE = 0 VCB = 45V pF IE = 0 VCB = 5V CC1C2 Collector to Collector Capacitance 2 2 MAX. pF VCC = 0 IC1C2 Collector to Collector Leakage Current ±500 ±500 ±500 ±500 MAX. nA VCCO = ±60V IB = IE = 0A fT NF Current Gain Bandwidth Product3 Narrow Band Noise Figure3 220 3 220 3 MHz dB VCE = 5V IC = 1mA IC = 100µA VCE = 5V BW = 200Hz, RG = 10 KΩ f=1KHz Linear Integrated Systems 180 3 180 3 MIN. MAX. • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201155 8/30/2012 Rev#A3 ECN# IT120 IT120A IT121 IT122 MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC IT120A IT120 IT121 IT122 UNITS CONDITIONS │VBE1-VBE2│ Base Emitter Voltage Differential 1 2 3 5 MAX. mV IC = 10 µA VCE = 5V ∆│(VBE1-VBE2)│/∆T Base Emitter Voltage Differential 3 5 10 20 MAX. µV/°C IC = 10 µA VCE = 5V 3 Change with Temperature │IB1-IB2│ T = -55°C to +125°C Base Current Differential 2.5 5 Six Lead 0.230 DIA. 0.209 0.150 0.210 0.170 0.115 6 LEADS 0.046 0.036 5 6 0.048 0.028 MIN. 0.500 VCE = 5V C2 B1 B2 E1 E2 N/C N/C SEATING PLANE 0.200 0.100 2 3 1 5 76 2 3 7 IC = 10 µA C1 MAX. 0.040 0.165 0.185 0.029 0.045 0.050 1 MAX. nA 0.335 0.370 0.016 0.019 DIM. A 0.100 45° 0.305 0.335 0.500 MIN. 0.016 0.021 DIM. B 0.019 DIA. 0.016 25 TO-78 TO-71 0.195 DIA. 0.175 0.030 MAX. 25 45° 0.028 0.034 0.100 C1 C2 B1 B2 E1 E2 N/C N/C Note: All Dimensions in inches NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA. 3. Not a production test. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201155 8/30/2012 Rev#A3 ECN# IT120 IT120A IT121 IT122