IRFHM8342TRPbF HEXFET® Power MOSFET VDSS 30 RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) V 16 m 25 Qg (typical) 5.0 nC ID (@TC (Bottom) = 25°C) 20 A PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Load Switch Features Low Charge (typical 5.2 nC) Low Thermal Resistance to PCB (<6.2°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Consumer Qualification Base part number Standard Pack Form Quantity Tape and Reel 4000 Package Type IRFHM8342PbF Benefits Low Switching Losses Enable better Thermal Dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability PQFN 3.3mm x 3.3mm Orderable Part Number IRFHM8342TRPbF Absolute Maximum Ratings Parameter Max. Units V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 10 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 28 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 18 IDM Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current PD @TA = 25°C Power Dissipation ID @ TC = 25°C PD @TC(Bottom) = 25°C A 20 112 2.6 Power Dissipation W 20 Linear Derating Factor 0.020 W/°C TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Notes through are on page 10 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 1, 2014 IRFHM8342TRPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient BVDSS/TJ RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS(th) IDSS IGSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Qg Qg Qgs Qgd Qgodr Qoss RG td(on) tr td(off) tf Ciss Coss Crss Min. 30 ––– ––– ––– 1.35 ––– ––– ––– ––– 19 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 20 13 20 1.8 -5.2 ––– ––– ––– ––– 10 5.0 1.8 1.7 1.5 3.3 2.6 8.1 30 7.6 5.6 560 102 48 Max. ––– ––– 16 25 2.35 ––– 1.0 100 -100 ––– ––– 7.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units Conditions V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 17A VGS = 4.5V, ID = 14A V VDS = VGS, ID = 25µA mV/°C µA VDS = 24V, VGS = 0V nA VGS = 20V VGS = -20V S VDS = 10V, ID = 17A nC VGS = 10V, VDS = 15V, ID = 17A VDS = 15V nC VGS = 4.5V ID = 17A nC VDS = 16V, VGS = 0V ns VDD = 15V, VGS = 4.5V ID = 17A RG=1.8 pF VGS = 0V VDS = 25V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy EAS Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Thermal Resistance Typ. ––– Min. ––– Typ. ––– Max. 21 Max. 20 Units Conditions A MOSFET symbol showing the integral reverse p-n junction diode. V TJ = 25°C, IS = 17A, VGS = 0V ns TJ = 25°C, IF = 17A, VDD = 15V nC di/dt = 330A/µs D ––– ––– 112 G ––– ––– ––– ––– 9.4 5.8 1.0 14 8.7 S Parameter RJC (Bottom) Junction-to-Case Junction-to-Case RJC (Top) Units mJ Typ. ––– Max. 6.2 Units ––– 50 °C/W RJA Junction-to-Ambient ––– 49 RJA (<10s) Junction-to-Ambient ––– 34 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 1, 2014 IRFHM8342TRPbF 1000 1000 100 BOTTOM 100 10 2.75V BOTTOM 10 2.75V 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 150°C Tj = 25°C 1 1 0.1 1 10 0.1 100 100 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 100 TJ = 150°C 10 TJ = 25°C V DS = 10V 60µs PULSE WIDTH 1.0 ID = 17A V GS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 1.0 2.0 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 V GS, Gate-to-Source Voltage (V) 10000 Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd V GS, Gate-to-Source Voltage (V) ID= 17A Coss = Cds + Cgd 1000 Ciss Coss 100 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics C, Capacitance (pF) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Crss 10 12.0 V DS= 24V 10.0 V DS= 15V V DS= 6.0V 8.0 6.0 4.0 2.0 0.0 1 10 100 0 V DS, Drain-to-Source Voltage (V) www.irf.com © 2014 International Rectifier 2 4 6 8 10 12 14 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.25V 3.0V 2.75V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.25V 3.0V 2.75V Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback July 1, 2014 IRFHM8342TRPbF 1000 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 150°C 10 TJ = 25°C 1 100 100µsec 1msec 10 1 10msec 0.1 V GS = 0V 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.6 1 10 100 VDS, Drain-to-Source Voltage (V) V SD, Source-to-Drain Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 30 3.0 V GS(th) , Gate threshold Voltage (V) Limited by package 25 ID, Drain Current (A) DC Tc = 25°C Tj = 150°C Single Pulse 20 15 10 5 0 2.5 2.0 1.5 1.0 ID = 25µA ID = 250µA ID = 1.0mA ID = 1.0A 0.5 25 50 75 100 125 150 -75 -50 -25 TC , Case Temperature (°C) 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 10. Drain-to-Source Breakdown Voltage Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) °C/W 10 D = 0.50 0.20 1 0.10 0.05 0.02 0.01 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 0.001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 1, 2014 IRFHM8342TRPbF 100 50 ID = 17A EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m ) 40 30 TJ = 125°C 20 TJ = 25°C ID TOP 2.8A 5.9A BOTTOM 17A 80 60 40 20 0 10 2 4 6 8 10 12 14 16 18 25 20 50 75 100 125 150 Starting TJ , Junction Temperature (°C) V GS, Gate -to -Source Voltage (V) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On–Resistance vs. Gate Voltage 100 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse) 10 1 0.1 1.0E-06 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 1.0E-05 1.0E-04 1.0E-03 1.0E-02 tav (sec) Fig 14. Single Avalanche Event: Pulse Current vs. Pulse Width 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 1, 2014 IRFHM8342TRPbF Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A I AS 0.01 Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms Fig 17b. Switching Time Waveforms Fig 17a. Switching Time Test Circuit Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 18. Gate Charge Test Circuit 6 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 19. Gate Charge Waveform Submit Datasheet Feedback July 1, 2014 IRFHM8342TRPbF Placement and Layout Guidelines The typical application topology for this product is the synchronous buck converter. These converters operate at high frequencies (typically around 400 kHz). During turn-on and turn-off switching cycles, the high di/dt currents circulating in the parasitic elements of the circuit induce high voltage ringing which may exceed the device rating and lead to undesirable effects. One of the major contributors to the increase in parasitics is the PCB power circuit inductance. This section introduces a simple guideline that mitigates the effect of these parasitics on the performance of the circuit and provides reliable operation of the devices. To reduce high frequency switching noise and the effects of Electromagnetic Interference (EMI) when the control MOSFET (Q1) is turned on, the layout shown in Figure 20 is recommended. The input bypass capacitors, control MOSFET and output capacitors are placed in a tight loop to minimize parasitic inductance which in turn lowers the amplitude of the switch node ringing, and minimizes exposure of the MOSFETs to repetitive avalanche conditions. Fig 20. Placement and Layout Guidelines 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 1, 2014 IRFHM8342TRPbF PQFN 3.3 x 3.3 Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 3.3 x 3.3 Part Marking Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 1, 2014 IRFHM8342TRPbF PQFN 3.3 x 3.3 Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko DIMENSION (MM) MIN MAX 3.50 3.70 3.50 3.70 1.10 1.30 7.90 P1 11.80 W 12.30 W1 Qty Reel Diameter QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE DIMENSION (INCH) MIN MAX .138 .146 .138 .146 .043 .051 8.10 12.20 12.50 .311 .465 .484 .319 .480 .492 4000 13 Inches CODE Ao Bo Ko W P1 DESCRIPTION Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 1, 2014 IRFHM8342TRPbF Qualification Information† Consumer Qualification Level (per JEDEC JESD47F†† guidelines) MSL1 (per JEDEC J-STD-020D††) PQFN 3.3mm x 3.3mm Moisture Sensitivity Level Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.15mH, RG = 50, IAS = 17A. Pulse width 400µs; duty cycle 2%. R is measured at TJ of approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Calculated continuous current based on maximum allowable junction temperature. Current is limited to 20A by source bonding technology. Revision History Date Comments 6/6/14 Updated schematic on page 1 Updated tape and reel on page 9 7/1/14 Remove “SAWN” package outline on page 8. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 1, 2014