LMBT3904TT1G

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽSimplifies Circuit Design.
ƽ We declare that the material of product compliance with
RoHS requirements.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBT3904TT1G
S-LMBT3904TT1G
ORDERING INFORMATION
Device
LMBT3904TT1G
S-LMBT3904TT1G
LMBT3904TT3G
S-LMBT3904TT3G
Marking
MA
MA
MA
MA
Shipping
3000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
40
Vdc
Collector–Base Voltage
V
CBO
60
Vdc
Emitter–Base Voltage
V
EBO
6.0
Vdc
200
mAdc
Collector Current — Continuous
IC
SC-89
3
COLLECTOR
1
BASE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 4 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
FR-4 Board(2), TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
200
mW
RθJA
PD
1.6
600
300
mW/°C
°C/W
mW
RθJA
TJ , Tstg
2.4
400
–55 to +150
mW/°C
°C/W
°C
2
EMITTER
DEVICE MARKING
LMBT3904TT1G = AM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage(3)
V (BR)CEO
40
—
Vdc
(I C = 1.0 mAdc)
Collector–Base Breakdown Voltage
V (BR)CBO
60
—
Vdc
V (BR)EBO
6.0
—
Vdc
I BL
—
50
nAdc
I CEX
—
50
nAdc
OFF CHARACTERISTICS
(I C = 10 µAdc)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc)
Base Cutoff Current
( V CE= 30 Vdc, V EB = 3.0 Vdc, )
Collector Cutoff Current
( V CE = 30Vdc, V EB = 3.0Vdc )
1. FR-4 Minimum Pad.
2. FR-4 1.0 x 1.0 Inch Pad.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
Rev.O 1/7
LESHAN RADIO COMPANY, LTD.
LMBT3904TT1G ;S-LMBT3904TT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
40
70
100
60
30
––
––
300
––
––
––
––
0.2
0.3
0.65
––
0.85
0.95
fT
200
–-
C obo
––
4.0
pF
C ibo
––
8.0
pF
h ie
1.0
10
pF
h re
0.5
8.0
X10 –4
h fe
100
400
—
h oe
1.0
40
θmhos
NF
—
5.0
dB
td
tr
ts
tf
—
—
—
—
35
35
200
50
ON CHARACTERISTICS (3)
DC Current Gain(1)
(I C =0.1 mAdc, V CE =1.0 Vdc)
(I C = 1.0 mAdc, V CE = 1.0 Vdc)
(I C = 10 mAdc, V CE = 1.0 Vdc)
(I C = 50mAdc, V CE = 1.0Vdc)
(I C = 100mAdc, V CE =1.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)(3)
(I C = 50 mAdc, I B = 5.0mAdc)
Base–Emitter Saturation Voltage(3)
(I C = 10 mAdc, I B = 1.0mAdc)
(I C = 50mAdc, I B = 5.0mAdc )
hFE
––
VCE(sat)
Vdc
V BE(sat)
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = 10mAdc, V CE= 20Vdc, f = 100MHz)
Output Capacitance
(V CB = 5.0Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V BE = 0.5Vdc, I C = 0, f = 1.0 MHz)
Input Impedancen
(V CE = 10Vdc, I C = 1.0mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Output Admittance
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Noise Figure
(V CE = 5.0 Vdc, I C = 100µAdc, R S = 1.0 k Ω, f = 1.0 kHz)
MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V CC = 3.0 Vdc,V BE = 0.5Vdc
I C = 10 mAdc, I B1 = 1.0mAdc)
(V CC = 3.0Vdc,
I C = 10 mAdc,I B1 = I B2 = 1.0mAdc)
ns
ns
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
Rev.O 2/7
LESHAN RADIO COMPANY, LTD.
LMBT3904TT1G;S-LMBT3904TT1G
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
275
+10.9 V
DUTY CYCLE = 2%
10 k
-ā0.5 V
+3 V
t1
10 < t1 < 500 ms
275
10 k
0
CS < 4 pF*
< 1 ns
CS < 4 pF*
1N91k
-ā9.1 V
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
10
5000
Q, CHARGE (pC)
CAPACITANCE (pF)
2000
5.0
Cibo
3.0
Cobo
2.0
1.0
0.1
VCC = 40 V
IC/IB = 10
3000
7.0
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
1000
700
500
QT
300
200
100
70
50
QA
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
REVERSE BIAS VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance
Figure 4. Charge Data
Rev.O 3/7
200
LESHAN RADIO COMPANY, LTD.
LMBT3904TT1G;S-LMBT3904TT1G
500
500
I C /I B = 10
300
200
V CC = 40 V
100
70
t r, RISE TIME (ns)
300
200
t r @ V CC = 3.0 V
TIME (ns)
50
30
20
40 V
15 V
10
7
5
2.0 V
t d @ V OB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
100
70
50
30
20
10
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Rise Time
500
200
500
t ’s = t s –1 /8 tf
300
200
I C /I B =20
I C /I B =10
V CC = 40 V
I B1 = I B2
300
200
I B1 = I B2
I C /I B = 20
100
70
t f, , FALL TIME (ns)
t ’s , STORAGE TIME (ns)
I C /I B = 10
I C /I B =20
50
I C /I B =10
30
20
10
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
100
70
50
30
20
I C /I B = 10
10
7
5
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50
70 100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
200
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V CE = 5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz)
14
12
f = 1.0 kHz
SOURCE RESISTANCE=200Ω
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
12
I C = 1.0 mA
10
SOURCE RESISTANCE =200Ω
8
I C = 0.5 mA
6
SOURCE RESISTANCE =1.0k
I C = 50µA
4
2
SOURCE RESISTANCE=500Ω
I C = 100 µA
0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
I C = 1.0 mA
I C = 0.5 mA
10
I C = 50 µA
8
I C = 100 µA
6
4
2
0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
f, FREQUENCY (kHz)
R S , SOURCE RESISTANCE (kΩ)
Figure 9.
Figure 10.
100
Rev.O 4/7
LESHAN RADIO COMPANY, LTD.
LMBT3904TT1G;S-LMBT3904TT1G
h PARAMETERS
(V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C)
hfe, CURRENT
200
100
70
50
30
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
hie, INPUT IMPEDANCE (kΩ)
20
10
5
2
1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 11. Current Gain
Figure 12. Output Admittance
20
10
5.0
2.0
1.0
0.5
0.2
0.1
50
0.1
h re, VOLTAGE FEEDBACK RATIO (X 10–4 )
0.1
hoe, OUTPUT ADMITTANCE ( mhos)
100
300
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 13. Input Impedance
Figure 14. Voltage Feedback Ratio
10
TYPICAL STATIC CHARACTERISTICS
1000
h FE, DC CURRENT GAIN
TJ = +150°C
VCE = 1.0 V
+25°C
100
-55°C
10
1
0.1
1.0
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
Rev.O 5/7
LESHAN RADIO COMPANY, LTD.
V CE, COLLECTOR EMITTER VOLTAGE (VOLTS)
LMBT3904TT1G;S-LMBT3904TT1G
1.0
T J = 25°C
0.8
I C = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I B , BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0
1.2
T J = 25°C
V BE(sat) @ I C /I B =10
0.5
COEFFICIENT(mV/°C)
V, VOLTAGE (VOLTS)
1.0
0.8
V BE @ V CE =1.0 V
0.6
0.4
V CE(sat) @ I C /I B =10
0.2
0
1.0
+25°C TO +125°C
θ VC FOR V CE(sat)
0
–55°C TO +25°C
–0.5
+25°C TO +125°C
–1.0
–55°C TO +25°C
–1.5
θ
VB
FOR V BE(sat)
–2.0
2.0 3.0
5.0
10
20
50
100
200
0
20
40
60
80
100
120
140
160
180
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
Rev.O 6/7
200
LESHAN RADIO COMPANY, LTD.
LMBT3904TT1G;S-LMBT3904TT1G
SC-89
A
-X-
3
1
2
B -Y-
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 463C-01 OBSOLETE, NEW STANDARD 463C-02.
S
K
G
2 PL
D
0.08 (0.003)
M
DIM
A
B
C
D
G
H
J
K
L
M
N
S
3 PL
X Y
N
M
C
J
-T-
H
MILLIMETERS
MIN
NOM
MAX
1.50
1.60
1.70
0.75
0.85
0.95
0.60
0.70
0.80
0.23
0.28
0.33
0.50 BSC
0.53 REF
0.10
0.15
0.20
0.30
0.40
0.50
1.10 REF
----10 _
----10 _
1.50
1.60
1.70
MIN
0.059
0.030
0.024
0.009
0.004
0.012
----0.059
INCHES
NOM
0.063
0.034
0.028
0.011
0.020 BSC
0.021 REF
0.006
0.016
0.043 REF
----0.063
MAX
0.067
0.040
0.031
0.013
0.008
0.020
10 _
10 _
0.067
SEATING
PLANE
H
L
G
RECOMMENDED PATTERN
OF SOLDER PADS
Rev.O 7/7