Si APD (Avalanche Photodiode)

Selection guide - March 2014
Si APD
(Avalanche Photodiode)
High-speed, high sensitivity photodiodes having an internal gain mechanism
HAMAMATSU PHOTONICS K.K.
S i
A v a l a n c h e
P h o t o d i o d e
Si APD
High-speed, high sensitivity photodiodes having an internal gain
mechanism
Short wavelength type Si APD · · · · · · · · · · · · · · · 5
· Low-bias operation· · · · · · · · · · · · · · · · · · · · · · · · · 5
· Low terminal capacitance · · · · · · · · · · · · · · · · · · · 6
Contents
Near infrared type Si APD· · · · · · · · · · · · · · · · · · · 7
APD modules · · · · · · · · · · · · · · · · · · · · · · · · · · · · 11
· Low bias operation· · · · · · · · · · · · · · · · · · · · · · · · · 7
· Standard type · · · · · · · · · · · · · · · · · · · · · · · · · · · · 11
· Low temperature coefficient · · · · · · · · · · · · · · · · · 9
· High-sensitivity type · · · · · · · · · · · · · · · · · · · · · · 12
· 900 nm band, low terminal capacitance · · · · · · 10
· High-stability type · · · · · · · · · · · · · · · · · · · · · · · · 12
· 1000 nm band, high sensitivity · · · · · · · · · · · · · · 10
· High-speed type · · · · · · · · · · · · · · · · · · · · · · · · · · 13
Si APD (avalanche photodiode)
The APD is a high-speed, high-sensitivity photodiode that internally multiplies photocurrent when reverse voltage is applied. The
APD, having a signal multiplication function inside its element, achieves higher S/N than the PIN photodiode and can be used in a
wide range of applications such as high-accuracy rangefinders and low-light-level detection that use scintillators. Though the APD
can detect lower level light than the PIN photodiode, it does require special care and handling such as the need for higher reverse
voltage and more detailed consideration of its temperature-dependent gain characteristics.
Si APD
Recommended Peak sensitivity
wavelength
wavelength
(nm)
(nm)
Type
Low-bias operation
Short
wavelength Low terminal
type
capacitance
200 to 650
320 to 650
620
600
Type no.
Package
S12053 series, etc.
Metal
S8664-K series
Metal
S8664-55/-1010
S8550 - 02
Low-bias operation
Near infrared
Low temperature
type
coefficient
600 to 800
Applications
Enhanced sensitivity in the UV to visible · Low-light-level detection
region
· Analytical instruments
Ceramic
S12023 series, etc.
Metal
S10341 series
Surface
mount
type
800
Features
· FSO
High sensitivity in the near IR region and
· Optical rangefinders
low bias voltage (operating voltage)
· Optical fiber communication
Compact, thin, low cost
· Optical rangefinders
· Laser radars
· FSO
600 to 800
800
S12062 series, etc.
Metal
· FSO
Low temperature coefficient of the bias
· Optical rangefinders
voltage, easy gain adjustment
· Optical fiber communication
900 nm band,
low terminal
capacitance
800 to 1000
860
S12092 series, etc.
Metal
Enhanced sensitivity in the 900 nm band
1000 nm band/
high sensitivity
900 to 1150
960
S11519 series
Metal
Enhanced sensitivity in the 1000 nm band,
· YAG laser detection, etc.
low bias voltage (operating voltage)
· Optical rangefinders
· Laser radars
APD module
Type
Standard type
Type no.
C12702 series
Features
Contains near infrared type or short wavelength type APD. FC/SMA fiber adapters are also available.
High-sensitivity type C12703 series
High gain type for low-light-level detection
High-stability type
C10508- 01
Digital temperature compensation type, high stability APD module
High-speed type
C5658
Can be used over a wide frequency range (up to 1 GHz)
Principle of avalanche multiplication
The photocurrent generation mechanism of the APD is the same as that of a normal photodiode. When light enters a photodiode, electron-hole pairs are generated if the light energy is higher than the band gap energy. The ratio of the number of generated electron-hole pairs to the number of incident photons is defined as the quantum efficiency (QE), expressed in percent (%).
The mechanism by which carriers are generated inside an APD is the same as in a photodiode, but the APD is different from a
photodiode in that it has a function to multiply the generated carriers.
When electron-hole pairs are generated in the depletion layer of an APD with a reverse voltage applied to the PN junction, the
electric field causes the electrons to drift toward the N+ side and the holes to drift toward the P+ side. The higher the electric
field strength, the higher the drift speed of these carriers.
Principle of APD operation
However, when the electric field reaches a certain level, the
carriers are more likely to collide with the crystal lattice so
Generated carriers produce new electronthat the drift speed becomes saturated at a certain speed. If
hole pairs while being accelerated by high
N+
electric field. Ionization
- - - - ++
the electric field is increased even further, carriers that esAvalanche
- -+
P
layer
caped the collision with the crystal lattice will have a great
-+
Newly generated carriers are also accelerated
deal of energy. When these carriers collide with the crystal
Pto produce further electron-hole pairs, and this
+
lattice, a phenomenon takes place in which new electron-hole
P
process repeats itself. Avalanche multiplication
pairs are generated. This phenomenon is called ionization.
High
Gain proportional to the applied reverse
voltage
These electron-hole pairs then create additional electron-hole
bias voltage can be obtained.
pairs, which generate a chain reaction of ionization.
KAPDC0006EC
3
Si APD
Spectral response (Si APD)
(Typ. Ta=25 °C, M=50, λ=650 nm)
55
Near infrared type
(1000 nm band/high sensitivity)
50
Photosensitivity (A/W)
45
Near infrared type
(Low-bias operation)
40
Near infrared type
(Low temperature coefficient)
35
30
Short wavelength type
(Low-bias operation)
25
Short wavelength type
(Low terminal capacitance)
20
15
Near infrared type
(900 nm band,
low terminal capacitance)
10
5
0
200
600
400
800
1000
1200
Wavelength (nm)
KAPDB0195ED
Cutoff frequency vs. recommended wavelength
(photosensitive area size compared at 0.5 mm)
1000
High
Cutoff frequency (MHz)
Near infrared type
(
800
Low-bias operation
Low temperature
coefficient
)
Near infrared type
(1000 nm band/high sensitivity)
Short wavelength type
(Low terminal capacitance)
600
Near infrared type
(
Short wavelength type
(Low-bias operation)
400
900 nm band,
low terminal
capacitance
)
200
Low
0
200
400
600
800
1000
1200
Wavelength (nm)
KAPDB0196EC
Sensitivity vs. response speed (APD modules)
109
C12703-01
DC to 100 kHz
-1.5 × 108 V/W
Sensitivity (V/W)
108
C10508-01
DC to 10 MHz
2.5 × 105 to 1.25 × 107 V/W
C12703
DC to 10 MHz
1.5 × 106 V/W
107
106
C5658
50 kHz to 1 GHz
2.5 × 105 V/W
5
10
C12702 series
4 types available
for different photosensitive areas and wavelengths
4 kHz to 100 MHz
-1 × 104 V/W
4
10
103
DC
10
100
1k
10 k
100 k
1M
10 M
100 M
1G
Response speed (Hz)
KAPDB0197EB
Si APD
4
Short wavelength type Si APD
These are short wavelength Si APDs with enhanced sensitivity in the UV to visible region. They offer high gain, high sensitivity,
and low noise in the short wavelength region.
They are suitable for applications such as low-light-level measurement and analytical instruments.
Low-bias operation
Type no.
Effective*1
photosensitive
area
Spectral
response
range
(mm)
(nm)
Breakdown
Temp.
Cutoff*2
voltage
coefficient of
frequency
max.
breakdown
RL=50 Ω
ID=100 μA
voltage
(V/°C)
(MHz)
(V)
Rise*2
time
RL=50 Ω
Terminal*2
capacitance
(ns)
(pF)
S12053- 02
ϕ0.2
900
0.4
2
S12053- 05
ϕ0.5
400
0.9
5
S12053-10
ϕ1.0
250
1.5
15
200 to 1000
200
Package
TO-18
0.14
ϕ1.5
S9075
Gain
λ=650 nm
50
100
3.5
30
TO-5
S5344
ϕ3.0
25
14
120
S5345
ϕ5.0
8
45
320
TO-8
*1: Area in which a typical gain can be obtained
*2: Value obtained when operated at the gain indicated in the table
Spectral response
Quantum efficiency vs. wavelength
(Typ. Ta=25 °C, M at 650 nm)
30
Gain vs. reverse voltage
(Typ. Ta=25 °C)
100
(Typ. λ=650 nm)
103
M=50
-20 °C
20
M=20
10
M=10
Si APD
0 °C
20 °C
40 °C
40
101
60 °C
20
0
200 300 400 500 600 700 800 900 1000 1100
0
200 300 400 500 600 700 800 900 1000 1100
Wavelength (nm)
Wavelength (nm)
KAPDB0010ED
5
102
60
Gain
Quantum efficiency (%)
Photosensitivity (A/W)
80
100
130
140
150
160
Reverse voltage (V)
KAPDB0023EB
KAPDB0011EC
Short wavelength type Si APD
Low terminal capacitance
Type no.
Effective*1
photosensitive
area
Spectral
response
range
(mm)
(nm)
Breakdown
voltage
max.
ID=100 μA
(V)
Temp.
coefficient of
breakdown
voltage
(V/°C)
Cutoff*2
frequency
RL=50 Ω
Rise*2
time
RL=50 Ω
Terminal*2
capacitance
(MHz)
(ns)
(pF)
S8664- 02K
ϕ0.2
700
0.5
0.8
S8664- 05K
ϕ0.5
680
0.52
1.6
S8664-10K
ϕ1.0
530
0.66
4
S8664-20K
ϕ2.0
280
1.3
11
S8664-30K
ϕ3.0
140
2.5
22
S8664-50K
ϕ5.0
60
6
55
S8664-55
5×5
40
9
80
Gain
λ=420 nm
Package
TO-5
TO-8
320 to 1000
500
0.78
50
Ceramic
S8664-1010
10 × 10
11
32
270
4 × 8 element array
Type no.
Terminal*2
capacitance
(MHz)
(pF)
500
0.78
250
10
(per element)
Spectral
response
range
Breakdown
voltage
max.
(mm)
(nm)
1.6 × 1.6
320 to 1000
(× 32 elements)
S8550 - 02
Cutoff*2
frequency
RL=50 Ω
(V)
Temp.
coefficient of
breakdown
voltage
(V/°C)
Effective*1
photosensitive
area
Gain
λ=420 nm
50
Package
Ceramic
*1: Area in which a typical gain can be obtained
*2: Value obtained when operated at the gain indicated in the table
Spectral response
Quantum efficiency vs. wavelength
(Typ. M=50 at 420 nm)
100
S8664-02K/-05K/-10K/
-20K/-30K/-50K
80
Quantum efficiency (%)
Photosensitivity (A/W)
20
15
10
-20 °C
100
0 °C
60
S8664-02K/-05K/-10K/
-20K/-30K/-50K
40
20 °C
40 °C
10
20
5
0
200
(Typ. λ=420 nm)
1000
S8664-55/-1010
S8550
S8664-55/-1010
S8550
Gain
25
Gain vs. reverse voltage
(Typ. Ta=25 °C)
400
600
800
1000
1200
0
200
60 °C
400
600
800
1000
1200
Wavelength (nm)
Wavelength (nm)
KAPDB0073EC
1
200
300
400
500
Reverse voltage (V)
KAPDB0125EA
KAPDB0076EB
Si APD
6
Near infrared type Si APD
Low-bias operation
These are near infrared Si APDs that operate with low bias voltage. Since high gain can be attained with a bias voltage of 200 V or
less, they are suitable for applications such as FSO, laser radar, and optical fiber communication.
Type no.
S12023- 02
Effective*1
photosensitive
area
Spectral
response
range
(mm)
(nm)
Breakdown
voltage
max.
ID=100 μA
(V)
Temp.
coefficient of
breakdown
voltage
(V/°C)
Cutoff*2
frequency
RL=50 Ω
Terminal*2
capacitance
(MHz)
(pF)
ϕ0.2
1000
1
ϕ0.5
900
2
Gain
λ=800 nm
Package
S12023- 05
S12051
TO-18
100
S12086
400 to 1000
S12023-10
200
0.65
ϕ1.0
600
6
ϕ1.5
400
10
S12023-10A
S3884
TO-5
S2384
ϕ3.0
120
40
60
S2385
ϕ5.0
40
95
40
TO-8
Surface mount type
The S10341 series is a low cost, small size Si APD with a surface-mount plastic package suitable for mass production.
Type no.
S10341- 02
Effective*1
photosensitive
area
Spectral
response
range
Breakdown
voltage
max.
(mm)
(nm)
(V)
ϕ0.2
400 to 1000
S10341- 05
200
ϕ0.5
*1: Area in which a typical gain can be obtained
*2: Value obtained when operated at the gain indicated in the table
7
Si APD
Temp.
coefficient of
breakdown
voltage
(V/°C)
Cutoff*2
frequency
RL=50 Ω
Terminal*2
capacitance
(MHz)
(pF)
1000
1
0.65
Gain
λ=800 nm
100
900
2
Package
Plastic
Near infrared type Si APD
Spectral response
Quantum efficiency vs. wavelength
(Typ. Ta=25 °C, M at 800 nm)
50
(Typ. Ta=25 °C)
100
M=100
80
Quantum efficiency (%)
Photosensitivity (A/W)
40
30
M=50
20
10
60
40
20
0
200 300 400 500 600 700 800 900 1000 1100
0
200 300 400 500
600 700
800 900 1000 1100
Wavelength (nm)
Wavelength (nm)
KAPDB0020EB
KAPDB0021EA
Gain vs. reverse voltage
(Typ. λ=800 nm)
10000
20 °C
0 °C
1000
Gain
-20 °C
100
40 °C
10
1
80
60 °C
100
120
140
160
180
Reverse voltage (V)
KAPDB0017EC
Si APD
8
Low temperature coefficient
These are near infrared Si APDs featuring low temperature coefficient of the bias voltage. They produce stable gain over a wide
temperature range.
They are suitable for applications such as FSO, laser radar, and optical fiber communication.
Type no.
Effective*1
photosensitive
area
Spectral
response
range
(mm)
(nm)
Breakdown
voltage
max.
ID=100 μA
(V)
Temp.
coefficient of
breakdown
voltage
(V/°C)
Cutoff*2
frequency
RL=50 Ω
Terminal*2
capacitance
(MHz)
(pF)
S12060 - 02
ϕ0.2
1000
1
S12060 - 05
ϕ0.5
900
2.5
Gain
λ=800 nm
Package
TO-18
100
ϕ1.0
S12060 -10
400 to 1000
300
6
350
12
0.4
ϕ1.5
S6045 - 04
600
TO-5
S6045 - 05
ϕ3.0
80
50
60
S6045 - 06
ϕ5.0
35
120
40
TO-8
*1: Area in which a typical gain can be obtained
*2: Value obtained when operated at the gain indicated in the table
Spectral response
Quantum efficiency vs. wavelength
(Typ. Ta=25 °C)
(Typ. Ta=25 °C, M at 800 nm)
100
50
M=100
80
Quantum efficiency (%)
Photosensitivity (A/W)
40
30
20
10
60
40
20
M=50
0
200 300 400 500 600 700 800 900 1000 1100
Wavelength (nm)
Gain vs. reverse voltage
(Typ. λ=800 nm)
-20 °C
103
Gain
0 °C
20 °C
102
40 °C
101
60 °C
100
160
180
200
220
240
260
Reverse voltage (V)
9
Si APD
300 400 500 600 700 800 900 1000 1100
Wavelength (nm)
KAPDB0026EA
104
0
200
KAPDB0029EB
KAPDB0027EA
Near infrared type Si APD
900 nm band, low terminal capacitance
This series is used in laser radar and other applications. It features a gradual curve of gain versus reverse voltage curve, providing
stable operation.
Type no.
Effective*1
photosensitive
area
Spectral
response
range
(mm)
(nm)
Breakdown
voltage
max.
ID=100 μA
(V)
Temp.
coefficient of
breakdown
voltage
(V/°C)
Cutoff*2
frequency
RL=50 Ω
Terminal*2
capacitance
(MHz)
(pF)
ϕ0.2
S12092- 02
Gain
λ=900 nm
0.4
400
TO-18
ϕ0.5
S12092- 05
0.7
440 to 1100
350
1.85
100
ϕ1.0
S9251-10
Package
380
1.9
TO-5
ϕ1.5
S9251-15
350
3.6
*1: Area in which a typical gain can be obtained
*2: Value obtained when operated at the gain indicated in the table
1000 nm band, high sensitivity
The S11519 series incorporates MEMS technology to enhance the sensitivity in the near IR region for YAG laser (1.06 μm) detection.
Type no.
Effective
photosensitive
area
Spectral
response
range
(mm)
(nm)
Breakdown
voltage
max.
ID=100 μA
(V)
Temp.
coefficient of
breakdown
voltage
(V/°C)
Cutoff
frequency
RL=50 Ω
Terminal
capacitance
(MHz)
(pF)
400
2
ϕ1.0
S11519 -10
600 to 1150
500
100
230
12
TO-8
Gain vs. reverse voltage
Spectral response
S11519 series
S9251 series
(Typ. Ta=25 °C, M=100 at 800 nm)
80
Package
TO-5
1.7
ϕ3.0
S11519 -30
Gain
λ=890 nm
(Typ. λ=800 nm)
104
(Typ.)
104
70
-20 °C
0 °C
0 °C
20 °C
20 °C
103
103
-20 °C
40
Gain
50
Gain
Photosensitivity (A/W)
S11519 series
60
102
30
102
40 °C
60 °C
S9251 series
40 °C
101
20
60 °C
101
10
0
400
600
800
1000
1200
Wavelength (nm)
1
100
150
200
250
300
200
300
400
Reverse voltage (V)
Reverse voltage (V)
KAPDB0109EC
100
100
KAPDB0082EB
KAPDB0185EA
Si APD
10
APD modules
Standard type
The APD module consists of an amplifier and bias power supply assembled in a compact
form to facilitate the use of the Si APD. Running on a +5 V power supply, it can be used for
a variety of light detection applications up to 100 MHz of frequency bandwidth.
Near infrared type
Features
Applications
Peak sensitivity wavelength: 800 nm
Wide bandwidth
Optical fiber adapters are also available
(sold separately).
Type no.
Effective*
photosensitive
area
Si APD evaluation
FSO
Barcode readers
Laser radars
Optical rangefinders
Optical communication
Cutoff frequency
Built-in
APD
Low
High
(mm)
C12702- 03
ϕ1.0
S12023-10
C12702- 04
ϕ3.0
S2384
4 kHz
Photoelectric
conversion
sensitivity
M=30, λ=800 nm
(V/W)
Minimum detection
limit
M=30, λ=800 nm
Temperature
stability of gain
25 ± 10 °C
Supply
voltage
(nW rms)
(%)
(V)
±2.5
+5
Minimum detection
limit
M=30, λ=620 nm
Temperature
stability of gain
25 ± 10 °C
Supply
voltage
(nW rms)
(%)
(V)
±2.5
+5
100 MHz
-6.8 × 104
3
80 MHz
-2.3 × 104
3.6
Short wavelength type
Features
Applications
Peak sensitivity wavelength: 620 nm
Wide bandwidth
Optical fiber adapters are also available
(sold separately).
Type no.
Effective*
photosensitive
area
Si APD evaluation
Film scanners
Laser monitoring
Cutoff frequency
Built-in
APD
Low
High
(mm)
C12702-11
ϕ1.0
S12053-10
C12702-12
ϕ3.0
S5344
* Area in which a typical gain can be obtained
11
Si APD
4 kHz
Photoelectric
conversion
sensitivity
M=30, λ=620 nm
(V/W)
4
100 MHz
-2.5 × 10
40 MHz
-1.9 × 104
5
6.3
APD modules
High-sensitivity type
These are high-gain APD modules suitable for low-light-level detection. They can be used for DC
light detection.
Applications
Features
Si APD evaluation
Fluorescence measurement
Barcode readers
Particle counters
Film scanners
Low-light-level detection
DC light detection
High gain
Type no.
Effective*
photosensitive
size
Cutoff frequency
Internal
APD
Low
Photoelectric
conversion
sensitivity
M=30, λ=800 nm
(V/W)
High
(mm)
C12703
ϕ1.5
S3884
C12703-01
ϕ3.0
S2384
DC
Minimum detection
limit
M=30, λ=800 nm
Temperature
stability of gain
25 ± 10 °C
Supply
voltage
(pW rms)
(%)
(V)
±2.5
±12
Temperature
stability of gain
0 to 40 °C
Supply
voltage
(pW rms)
(%)
(V)
63
±5.0 max.
±5
10 MHz
1.50 × 10
6
630
100 kHz
-1.50 × 108
6.3
High-stability type
The C10508-01 consists of an APD, current-voltage converter, high-voltage power supply
circuit as well as a microcontroller for adjusting the APD gain and controlling temperature
compensation with high accuracy. This makes it easy to adjust the APD gain and even at
high gain, stable detection is possible even under temperature fluctuating conditions.
Applications
Features
Gain: adjustable by switch or PC command
Gain temperature stability: ±5% or less
(Gain=250, Ta=0 °C to +40 °C)
Easy handling: only ±5 V power supply
Type no.
C10508- 01
Si APD evaluation
Power meters
Low-light-level detection
Cutoff frequency
Photoelectric
conversion
sensitivity
M=250, λ=800 nm
(V/W)
Effective*
photosensitive
size
(mm)
Internal
APD
Low
High
ϕ1.0
S12023-10
DC
10 MHz
1.25 × 107
Minimum detection
limit
M=250, λ=800 nm
* Area in which a typical gain can be obtained.
FC/SMA fiber adapter (sold separately)
FC or SMA fiber adapters can be attached to the following APD modules to allow FC or SMA optical fiber cables to be connected
to the modules.
APD module
FC fiber adapter
SMA fiber adapter
C12702- 03
A8407-18
A8424-18
C12702- 04
A8407- 05A
A8424- 05A
C12702-11
A8407-18
A8424-18
C12702-12
A8407- 05A
A8424- 05A
C12703
A8407- 05
A8424- 05
C12703- 01
A8407- 05A
A8424- 05A
C10508- 01
A12855 - 01
A12855 - 02
Si APD
12
High-speed type
This device can be used in a wide frequency range (up to 1 GHz).
Features
Applications
High-speed light detection
Flat frequency characteristics
Compact and lightweight
Single power supply operation
OTDR
Optical communication
Laser radars
FSO
Optical rangefinders
Cutoff frequency
Type no.
C5658
13
Si APD
Effective*1
photosensitive
size
(mm)
Internal
APD
Low
High
ϕ0.5
S12023- 05
50 kHz
1 GHz
Photoelectric
conversion
sensitivity
M=100, λ=800 nm
(V/W)
2.50 × 105
Minimum detection
limit
M=100, λ=800 nm
Temperature
stability of gain
25 ± 10 °C
Supply
voltage
(nW rms)
(%)
(V)
16
±5.0
+12
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Hamamatsu makes no other warranties, and any and all implied warranties of merchantability, or fitness for a particular purpose,
are hereby disclaimed. The customer is responsible for use of the product in accordance with Hamamatsu's instructions and
within the operating specifications and ratings listed in this catalogue. Hamamatsu shall not be responsible for the customer's
improper selection of a product for a particular application or otherwise. No warranty will apply if the products are in any way
altered or modified after delivery by Hamamatsu or for any intentional misuse or abuse of the products. Proper design safety
rules should be followed when incorporating these products into devices that could potentially cause bodily injury.
Hamamatsu's liability on any claim for loss or damage arising out of the supplying of any products, whether based on contract,
warranty, tort (including negligence and for property damage or death and bodily injury) or other grounds, shall not in any event
exceed the price allocable to such products or a part thereof involved in the claim, regardless of cause or fault. In no event shall
Hamamatsu be responsible to the customer or any third party for any consequential, incidental or indirect damages, including
but not limited to loss of profits, revenues, sales, data, business, goodwill or use, even if the company has been advised of the
possibility of such loss or damage. The limitation of liability set forth herein applies both to products and services purchased or
otherwise provided hereunder. This warranty is limited to repair or replacement, at the sole option of Hamamatsu, of any product
which is defective in workmanship or materials used in manufacture. All warranty claims must be made within 1 year from the
date of purchase or provision of the products or services.
Products that are amenable to repair shall be done so either under warranty or pursuant to a separate repair agreement. Some
products cannot be repaired either because of the nature or age of the product, the unavailability of spare parts, or the extent of
the damage is too great. Please contact your local Hamamatsu office for more details.
The products described in this catalogue should be used by persons who are accustomed to the properties of photoelectronics
devices, and have expertise in handling and operating them. They should not be used by persons who are not experienced or
trained in the necessary precautions surrounding their use.
The information in this catalogue is subject to change without prior notice.
Information furnished by Hamamatsu is believed to be reliable. However, no responsibility is assumed for possible inaccuracies
or omissions. Before using these products, always contact us for the delivery specification sheet to check the latest specifications.
No patent rights are granted to any of the circuits described herein.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1, Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558, Japan
Telephone: (81)53-434-3311, Fax: (81)53-434-5184
www.hamamatsu.com
Main Products
Si photodiodes
APD
Photo IC
Image sensors
X-ray flat panel sensors
PSD
Infrared detectors
LED
Optical communication devices
Automotive devices
Mini-spectrometers
High energy particle/X-ray detectors
Opto-semiconductor modules
Hamamatsu also supplies:
Photoelectric tubes
Imaging tubes
Light sources
Imaging and processing systems
Sales Offices
JAPAN:
HAMAMATSU PHOTONICS K.K.
325-6, Sunayama-cho, Naka-ku
Hamamatsu City, 430-8587, Japan
Telephone: (81)53-452-2141, Fax: (81)53-456-7889
Danish Office:
Lautruphoj 1-3
DK-2750 Ballerup, Denmark
Telephone: (45)70 20 93 69, Fax: (45)44 20 99 10
E-mail: [email protected]
China:
HAMAMATSU PHOTONICS (CHINA) CO., LTD.
1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu,
Chaoyang District, Beijing 100020, China
Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866
E-mail: [email protected]
Netherlands Office:
Televisieweg 2
NL-1322 AC Almere, The Netherlands
Telephone: (31)36-5405384, Fax: (31)36-5244948
E-mail: [email protected]
U.S.A.:
HAMAMATSU CORPORATION
Main Office
360 Foothill Road, P.O. BOX 6910,
Bridgewater, N.J. 08807-0910, U.S.A.
Telephone: (1)908-231-0960, Fax: (1)908-231-1218
E-mail: [email protected]
Western U.S.A. Office:
Suite 200, 2875 Moorpark Avenue
San Jose, CA 95128, U.S.A.
Telephone: (1)408-261-2022, Fax: (1)408-261-2522
E-mail: [email protected]
United Kingdom, South Africa:
HAMAMATSU PHOTONICS UK LIMITED
Main Office
2 Howard Court, 10 Tewin Road, Welwyn Garden City,
Hertfordshire AL7 1BW, United Kingdom
Telephone: (44)1707-294888, Fax: (44)1707-325777
E-mail: [email protected]
South Africa office:
PO Box 1112
Buccleuch 2066
Johannesburg, South Africa
Telephone/Fax: (27)11-802-5505
France, Portugal, Belgium, Switzerland, Spain:
HAMAMATSU PHOTONICS FRANCE S.A.R.L.
19, Rue du Saule Trapu, Parc du Moulin de Massy,
91882 Massy Cedex, France
Telephone: (33)1 69 53 71 00
Fax: (33)1 69 53 71 10
E-mail: [email protected]
Swiss Office:
Dornacherplatz 7
4500 Solothurn, Switzerland
Telephone: (41)32/625 60 60,
Fax: (41)32/625 60 61
E-mail: [email protected]
Belgium Office:
Axisparc Technology , rue Andre Dumont 7 - 1435
Mont-Saint-Guibert, Belgium
Telephone: (32)10 45 63 34
Fax: (32)10 45 63 67
E-mail: [email protected]
Information in this catalogue is
believed to be reliable. However,
no responsibility is assumed for
possible inaccuracies or omissions.
Specifications are subject to
change without notice. No patent
rights are granted to any of the
circuits described herein.
Spanish Office:
C. Argenters, 4 edif 2
Parque Tecnologico del Valles
E-08290 CERDANYOLA, (Barcelona) Spain
Telephone: (34)93 582 44 30
Fax: (34)93 582 44 31
E-mail: [email protected]
Poland Office:
02-525 Warsaw,
8 St. A. Boboli Str., Poland
Telephone: (48)22-646-0016, Fax: (48)22-646-0018
E-mail: [email protected]
North Europe and CIS:
HAMAMATSU PHOTONICS NORDEN AB
Main Office
Torshamnsgatan 35 16440 Kista, Sweden
Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01
E-mail: [email protected]
Russian Office:
11, Chistoprudny Boulevard, Building 1,
101000, Moscow, Russia
Telephone: (7) 495 258 85 18, Fax: (7) 495 258 85 19
E-mail: [email protected]
Italy:
HAMAMATSU PHOTONICS ITALIA S.R.L.
Strada della Moia, 1 int. 6
20020 Arese, (Milano), Italy
Telephone: (39)02-935 81 733
Fax: (39)02-935 81 741
E-mail: [email protected]
Rome Office:
Viale Cesare Pavese, 435
00144 Roma, Italy
Telephone: (39)06-50513454, Fax: (39)06-50513460
E-mail: [email protected]
Taiwan:
HAKUTO TAIWAN LTD.
6F, No.308, Pa teh Road, Sec, 2,
Taipei, Taiwan R.O.C.
Telephone: (886)2-8772-8910
Fax: (886)2-8772-8918
KORYO ELECTRONICS CO., LTD.
9F-7, No.79, Hsin Tai Wu Road
Sec.1, Hsi-Chih, Taipei, Taiwan, R.O.C.
Telephone: (886)2-2698-1143, Fax: (886)2-2698-1147
Republic of Korea:
SANGKI CORPORATION
Suite 431, World Vision BLDG.
24-2 Yoido-Dong
Youngdeungpo-Ku
Seoul, 150-877
Telephone: (82)2-780-8515
Fax: (82)2-784-6062
Singapore:
HAKUTO SINGAPORE PTE LTD.
Block 2, Kaki Bukit Avenue 1, #04-01 to #04-04
Kaki Bukit Industrial Estate, Singapore 417938
Telephone: (65)67458910, Fax: (65)67418200
Germany, Denmark, Netherlands, Poland:
HAMAMATSU PHOTONICS DEUTSCHLAND GmbH
Arzbergerstr. 10,
D-82211 Herrsching am Ammersee, Germany
Telephone: (49)8152-375-0, Fax: (49)8152-265-8
E-mail: [email protected]
© 2014 Hamamatsu Photonics K.K.
Quality, technology, and service
are part of every product.
Cat. No. KAPD0001E05
Mar. 2014 DN
Printed in Japan (2,000)