ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response *1 tr , tf = 30 ps (Typ.) Low dark current 100 pA (Ta=25 °C) Large photosensitive area 200 mm *1: Values excluding response time of light source, bias tee, assembly circuit, oscilloscope etc G4176-03 G4176-01 APPLICATIONS Optical high-speed waveform measurements Optical communications DESCRIPTION HAMAMATSU realized MSM (Metal-Semiconductor-Metal) Photodetectors having ultrafast responses. The GaAs MSM Photodetector G4176-03 features 30 ps (design value) response time for both rise & fall while keeping a low dark current (100 pA at Ta=25 °C). Symmetrical and interdigital Schottky contacts are fabricated at the sensitive area, whose size can be larger than other kinds of fast response photodetectors. This makes easier to set up with optics. Therefore, MSM Photodetectors are suited for measurements of optical high-speed waveform and optical communications. There is no electrical polarity in MSM Photodetectors, that is, both polarities of a bias voltage are available, and the polarity of an output signal depends on its connection. Two kinds of packages are prepared for each MSM Photodetector. The package of G4176-03 is a coaxial metal type (patent : Japan 2070802), which is easy to connect with an electrical SMA-connector. That of G4176-01 is a TO-18, which is very common. An optical fiber or connector input types are available as a custom option. Contact your local representative for more information. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2013 Hamamatsu Photonics K.K. ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) ABSOLUTE MAXIMUM RATINGS (Ta=25 °C) Item Symbol Bias Voltage Vb Peak Input Light F Pulse width Pulse width Operating Temperature Top(a) Storage Temperature Value Condition Tstg *1 1 ns Unit Peak Response Wavelength l lp Effective Sensitive Area A Radiant sensitivity S l = 850 nm 0.2 0.3 - A/W mW Dark Current Id - - 100 300 pA - l = 850 nm 0.2 X 10-15 3 X 10-15 - W/Hz1/2 0.2 X 10-15 4 X 10-15 - - -40 to +85 - -40 to +100 °C °C Chip Size Value Unit Vb = 7 V 450 to 870 nm Vb = 7 V 850 nm - 0.2 - 1 0.2 1 mm2 mm2 - TO-5 - (Unified with SMA connector) G4176-01 - TO-18 Typ. Max. NEP *3 G4176-03 G4176-01 Terminal Capacitance Ct - G4176-01 - 0.3 0.4 - 0.5 0.6 - 30 - - 50 - - 30 - - 50 - pF Rise Time G4176-03 tr 10 to 90 % (design value)*5 G4176-01 ps Fall Time G4176-03 Package G4176-03 Min. G4176-03 *4 Condition - Unit mW *2 GENERAL CHARACTERISTICS (Ta=25 °C) Spectral Response Range Value Condition 50 *2 *2: This value is under the condition that the light irradiate the whole effective area (200 mm ) uniformly. When the irradiated area is smaller than effective area of the detector, the peak input light becomes smaller in proportional to the irradiate area. Symbol Symbol V *1: Duty ratio should be less than 50 %.(Even if the pulse width is 1 ns, when the duty ratio is >50 %, pulse width > 1ns is applied.) Item Item 10 5 1 ns ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25 °C, Vb=7 V) tf 90 to 10 % (design value)*5 G4176-01 ps *3: Noise Equivalent Power *4: Value of Chip only *5: Values excluding response time of light source, bias tee, assembly circuit, oscilloscope etc Figure 1: Optical Pulse Response G4176-01 G4176-03 (Including time response of light source, bias tee and oscilloscope) 1.0 1.0 0.9 0.9 0.8 0.8 0.7 0.6 0.5 0.4 0.3 0.7 0.6 0.5 0.4 0.3 0.2 0.2 0.1 0.1 0 0 Time (0.1 ns/div) Time (0.1 ns/div) Figure 2: Spectral Response (Vb = 7 V) 100 10-1 10-2 10-3 300 (Vb = 7 V) 1.1 Output (arb. unit) Output (arb. unit) 1.1 Radiant Sensitivity (A/W) (Including time response of light source, assembly circuit and oscilloscope) (Vb = 7 V) 400 500 600 700 800 Wavelength (nm) 900 1000 ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) CONNECTION EXAMPLES G4176-03 G4176-01 Output Optical Input Electric Output Case Lead 100 9 BIAS TEE Electric Output Optical Input G4176-03 BIAS CASE Coaxial Connector G4176-01 10 nF BIAS 10 k9 Power Supply Power Supply - (or +) + (or -) + (or -) - (or +) DIMENSIONAL OUTLINES (Unit : mm) G4176-03 G4176-01 B5.4 B4.7 12 min. 9.6 3.0 2.0 SENSITIVE SURFACE 3.6 10 B8.2 2.3 SENSITIVE SURFACE 1.2 CHIP CHIP 1/4-36UNS-2B B7.9 B0.45LEAD CASE BIAS / OUTPUT* OUTPUT/BIAS* OUTPUT / BIAS* CASE (BOTTOM VIEW) (BOTTOM VIEW) *Both polarities of the bias voltage are available. http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Laser Group, Sales Dept. 1-8-3, Shinmiyakoda, Kita-ku, Hamamatsu City, Shizuoka, 431-2103, Japan, Telephone: (81)53-484-1301, Fax: (81)53-484-1302, E-mail: [email protected] U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 SE-164 40 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected] Cat. No. LPRD1022E05 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, 27 Dongsanhuan Road North, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected] MAR. 2013 Printed in Japan