1N4150 Small Signal Switching Diodes VOLTAGE RANGE: 50 V CURRENT: 150 m A DO - 35 Features ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation Mechanical Data ◇ Case: DO-35,glass case ◇ Polarity: Color band denotes cathode ◇ Weight: 0.004 ounces, 0.13 grams Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. MAXIMUM RATINGS 1N4150 UNITS Reverse voltage VR 50 V Peak reverse voltage VRM 50 V IO mA Average forward rectified current VR=0V Forward surge current at t=1µs IFSM 150 4.0 Power dissipation Ptot 500 mW Rthja 500 K/W Tj 175 ℃ TSTG -65 --- + 175 ℃ Thermal resistance junction to ambient Junction temperature Storage temperature range A ELECTRICAL CHARACTERISTICS MIN. MAX. Forward voltage at IF=1mA 0.54 0.62 IF=10mA 0.66 0.74 0.76 0.86 IF=100mA 0.82 0.92 IF=200mA 0.87 1.0 - 0.1 - 100 Ctot - 2.5 pF trr - 4.0 ns IF=50mA Leakage current @VR=50V,TJ=25℃ VR=50V,TJ=150℃ Capacitance at VR=0V,f=1MHZ,VHF=50mV VF IR UNITS V µA Reverse recovery time IF=IR=(10to100mA),iR=0.1×IR RL=100Ω 1N4150 Small Signal Switching Diodes Ratings AND Charactieristic Curves FIG.1 -- ADMISSIBLE POWER DISSIPATION NNNNNN VERSUS AMBIENT TEMPERATURE FIG.2 -- FORWARD CHARACTERISTICS mA 10 3 mW 1000 900 800 Ptot 10 2 700 600 T J =25 I F 10 500 400 1 300 200 10 -1 100 0 0 100 200℃ 10 -2 TA 0 FIG.3 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE nA 10 4 10 3 10 2 10 V R =50V 1 0 10 0 20 0℃ 0.5 VF 1V