1N4151 Small Signal Switching Diodes REVERSE VOLTAGE : 50 V CURRENT: 0.15 A DO-35(GLASS) Features Silicon epitaxial planar diode High speed switching diode 500 mW power dissipation Mechanical Data Case: DO-35,glass case Polarity: Color band denotes cathode Dimensions in millimeters Weight: 0.004 ounces, 0.13 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at ２５ ambient temperature unless otherwise specified. MAXIMUM RATINGS Reverse voltage Peak reverse voltage Average forw ard rectified current half w ave rectification w ith resistive load @ TA=２５ and f 50Hz Forw ard surge current @ t<1s and TJ =２５ Pow er dissipation @ TA=２５ Junction temperature Storage temperature range 1N4151 UNITS VR VRM 50.0 75.0 V V IAV 1501) mA IFSM Ptot TJ TSTG 500.0 5001) 175 -55 --- +175 mA mW 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. ELECTRICAL CHARACTERISTICS Forw ard voltage @ IF=10mA Leakage current @ VR=50V @ VR=20V TJ =150 Capacitance @ V F=VR=0V Reverse breakdow n voltage tested w ith 5μA pulses Reverse recovery time from IF=10mA to IR=10mA to IR=1mA from IF=10mA to IR=1mA, VR=6V. RL=100Ω. Thermal resistance junction to ambient Rectification efficiency @ 100MHz,V RF=2V VF MIN - TYP - MAX 1.0 UNITS V IR IR CJ - - 50.0 50.0 2 nA μA pF V(BR)R 75.0 - - V trr - - RθJA ηv 0.45 - 4 2 3501) - ns ns K/W - 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. http://www.luguang.cn mail:[email protected] 1N4151 Small Signal Switching Diodes Ratings AND Charactieristic Curves FIG.1 -- ADMISSIBLE POWER DISSIPATION NNNNNN VERSUS AMBIENT TEMPERATURE FIG.2 -- FORWARD CHARACTERISTICS mA 10 3 mW 1000 900 800 Ptot 10 2 700 600 T J =100 I F 10 500 T J =25 400 1 300 200 10 -1 100 0 0 100 200℃ 10 -2 TA 0 1 VF FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION A 100 V=tp/T IFRM IFRM tp 10 T=1/fp n=0 T 0.1 0.2 1 0.5 0.1 10 -5 10 -4 10 -3 10 -2 10 -1 1 10S tp http://www.luguang.cn mail:[email protected] 2V 1N4151 Small Signal Switching Diodes Ratings AND Charactieristic Curves FIG.4 -- RECTIFICATION EFFICIENCY JJJJJJJJMEASUREMENT CIRCUIT FIG.5 -- RELATIVE CAPACITANCE VERSUS JJJJJJJJJJJJJJ VOLTAGE 1.1 T J =25 f=1MHz 1.0 D.U.T. 60 Ctot(V R ) Ctot(OV) VRF=2V 2nF 5K VO 0.9 0.8 0.7 0 2 4 6 8 1 0V VR FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATUREFF FIG.7 -- DYNAMIC FORWARD RESISTANCE FFFVERSUS FORWARD CURRENT nA 10 10 4 4 TJ=25℃ f=1MHz 10 3 10 r 10 2 F 10 10 3 2 10 V R =50V 1 0 10 0 20 0℃ http://www.luguang.cn 1 10 -2 10 -1 1 10 mail:[email protected] IF 10 2 mA