BL GALAXY ELECTRICAL LL4150 VOLTAGE RANGE: 50 V SMALL SIGNAL SWITCHING DIODE FEATURES CURRENT: 300 m A MINI-MELF ◇ Silicon epitaxial planar diode Cathode indification φ 1.5± 0.1 ◇ High speed switching diode ◇ 500 mW power dissipation MECHANICAL DATA ◇ Case: MINI-MELF,glass case 0.4± 0.1 3.4 +0.3 -0.1 ◇ Polarity: Color band denotes cathode Dimensions in millimeters ◇ Weight: Approx 0.031 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. MAXIMUM RATINGS LL4150 UNITS Reverse voltage VR 50 V Peak reverse voltage VRM 50 V IO 300 mA Forward surge current at t=1µs IFSM 4.0 A Power dissipation Ptot 500 mW Rthja 350 K/W Tj 175 ℃ TSTG -65 --- + 175 ℃ Average forward rectified current VR=0V Thermal resistance junction to ambient Junction temperature Storage temperature range ELECTRICAL CHARACTERISTICS MIN. MAX. Forward voltage at IF=1mA 0.54 0.62 IF=10mA 0.66 0.74 0.76 0.86 IF=100mA 0.82 0.92 IF=200mA 0.87 1.0 - 0.1 - 100 Ctot - 2.5 pF trr - 4.0 ns IF=50mA Leakage current @VR=50V,TJ=25℃ VR=50V,TJ=150℃ Capacitance at VR=0V,f=1MHZ,VHF=50mV VF IR UNITS V µA Reverse recovery time IF=IR=(10to100mA),iR=0.1×IR RL=100Ω www.galaxycn.com Document Number 0268024 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES LL4150 FIG.1 -- ADMISSIBLE POWER DISSIPATION NNNNNN VERSUS AMBIENT TEMPERATURE FIG.2 -- FORWARD CHARACTERISTICS mA 10 3 mW 1000 900 800 Ptot 10 2 700 600 T J =25 I F 10 500 400 1 300 200 10 -1 100 0 0 100 200℃ 10 -2 TA 0 0.5 VF 1V FIG.3 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE nA 10 4 10 3 10 2 10 V R =50V 1 0 10 0 20 0℃ www.galaxycn.com Document Number 0268024 BLGALAXY ELECTRICAL 2.