RoHS NKSD400-150 Series RoHS SEMICONDUCTOR Nell High Power Products Schottky Rectifier, 400A/150V FEATURES 175°C T J operation Center tap module Low forward voltage drop High frequency operation TO-244 (non-insulated) Guard ring for enhanced ruggedness and long term reliability Lead (Pb)-free Lug terminal anode 1 Designed and qualified for industrial level TO-244 (insulated) Lug terminal common cathode Lug terminal anode 2 Lug terminal anode 1 DESCRIPTION The NKSD400... Schottky rectifier common cathode module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Base common cathode NKSD400-150 Lug terminal anode 2 NKSD400-150I *Add suffix “I” for insulated type Lug terminal common anode TYPICAL APPLICATIONS Lug terminal cathode1 High current switching power supplies Plating power supplies UPS system Converters Freewheeling Lug terminal cathode2 NKSD400-150RI Welder Reverse battery protection. *Add suffix ”R” for common anode PRODUCT SUMMARY lF(AV) 400A VR 150 V VALUES UNIT 400 A 150 V 20000 A 0.70 V -55 to 175 ºC NKSD400-150 UNIT 150 V MAJOR RATINGS AND CHARACTERISTICS SYMBOL I F(AV) CHARACTERISTICS Rectangular waveform V RRM l FSM t p = 5 µs sine VF 200 Apk, T j = 125°C (per leg) TJ Range VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage www.nellsemi.com SYMBOL VR V RWM Page 1 of 6 RoHS NKSD400-150 Series RoHS SEMICONDUCTOR Nell High Power Products ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig.5 VALUES UNIT SYMBOL TEST CONDITIONS I F(AV) 50% duty cycle at T C = 129°C, rectangular waveform 200 per leg per device 400 Maximum peak one cycle non-repetitive surge current per leg See fig.7 l FSM Non- repetitive avalanche energy per leg E AS T J =25°C, l AS =5.5A, L=1.0mH Repetitive avalanche current per leg l AR Current decaying linearly to zero in 1 µs Frequency limited by T J maximum V A =1.5xV R typical SYMBOL TEST CONDITIONS A Following any rated load condition and with rated 10 ms sine or 6 ms rect. pulse V RRM applied 5 µs sine or 3 µs rect. pulse 20000 2300 15 mJ 1 A ELECTRICAL SPECIFICATIONS PARAMETER UNIT VALUES 200A 0.92 T J = 25°C Maximum forward voltage drop per leg See fig.1 400A 1.15 200A 0.70 V FM (1) V T J = 125°C 400A Maximum reverse leakage current per leg See fig.2 0.85 100 μA 50 mA 6000 pF 5 nH 10000 V/µs 1000 (1min) V T J = 25°C V R = Rated V R l RM (1) T J = 125°C Maximum junction capacitance per leg CT V R = 5 V DC (test signal range 100 kHz to 1 MHZ) 25°C Typical series inductance per leg LS From top of terminal hole to mounting plane Maximum voltage rate of change dV/dt Maximum RMS insulation voltage (for insulated type) V INS Rated V R Note (1) Pulse width < 300 µs, duty cycle < 2% THERMAL-MECHANICAL SPECIFICATIONS MIN. TYP. MAX. UNIT -55 - 175 ºC - - 0.19 - - 0.26 - - 0.095 - - 0.13 - 0.10 - TO-244 (non-insulated) - 85 (3) - TO-244 (insulated) - 100 (3.53) - Mounting torque 35.4 (4) - 53.1 (6) Mounting torque center hole 30 (3.4) - 40 (4.6) Terminal torque 30 (3.4) - 44.2 (5) vertical pull - - 80 2" lever pull - - 35 SYMBOL PARAMETER T J ,T Stg Maximum junction and storage temperature range TO-244 (non-insulated) Thermal resistance, junction to case per leg R thJC TO-244 (insulated) Thermal resistance, junction to case per module TO-244 (non-insulated) R thJC TO-244 (insulated) R thCS Thermal resistance, case to heatsink Weight g(oz.) Case style www.nellsemi.com ºC/W JEDEC Page 2 of 6 lbf ∙ in (N∙m) lbf ∙ in TO-244AA compatible RoHS NKSD400-150 Series RoHS SEMICONDUCTOR Nell High Power Products Device code NK S D 400 1 2 3 4 - 150 R I 5 6 7 1 - Nell's power module 2 - S for Schottky Barrier Diode 3 - D for Dual Diodes, TO-244 Package 4 - Maximum average forward current, A 5 - Voltage rating (150 = 150V) 6 - None for common cathode configuration "R" for common anode configuration 7 - None for non-insulated type " I " for insulated type Fig.2 Typical values of reverse current vs. Reverse voltage (Per Leg) 1000 1000 T J = 17 5ºC T J = 17 5ºC 100 Reverse curret, l R (mA) lnstantaneous forward current, l F (A) Fig.1 Maximum forward voltage drop characteristics (Per Leg) T J = 1 25ºC 100 T J = 25ºC 10 T J = 1 50ºC 10 T J = 125 ºC T J = 100 ºC 1 T J = 7 5ºC 0.1 T J = 50ºC T J = 2 5ºC 0.01 1 0.001 0 0.5 1.0 1.5 2.0 0 2.5 30 Forward voltage drop, V FM (V) 60 90 120 150 Reverse voltage, V R (V) Fig.3-1 Maximum thermal impedance R th(j-c) characteristics (Per Leg, for TO-244 non-insulated) Thermal lmpedance, R th(j-c) 1 0.1 D = 0.75 0.01 D = 0.50 D= 0.33 Single pulse (thermal resistance) D = 0.25 D =0.20 0.001 0.00001 0.0001 0.001 0.01 0.1 Rectangular pulse duration,t 1 (s) www.nellsemi.com Page 3 of 6 1 10 RoHS NKSD400-150 Series RoHS SEMICONDUCTOR Nell High Power Products Fig.3-2 Maximum thermal impedance R th(j-c) characteristics (Per Leg, for TO-244 insulated) Thermal lmpedance, R th(j-c) 1 D = 0.75 D = 0.5 D= 0.33 D = 0.25 0.1 D =0.2 Single pulse (thermal resistance) 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 10 1 Rectangular pulse duration,t 1 (s) Fig.5 Maximum allowable case temperature vs. Average forward current (Per Leg) Fig.4 Typical junction capacitance vs. Reverse voltage (Per Leg ) 180 Allowable case temperature (°C) 1000 T J = 25ºC 100 30 0 90 60 DC 140 120 Square wave (D = 0.50) 80% rated V r applied 100 See note (1) 80 0 50 100 150 200 250 300 Reverse voltage, V R (V) Average forward current, l F(AV) (A) Fig.6 Forward power loss characteristics (Per Leg) Fig.7 Maximum non-repetitive surge current (Per Leg) 250 Average power loss (W) 160 120 D=0.20 D=0.25 D=0.33 D=0.50 D=0.75 200 150 RMS limit 100 DC 50 0 0 50 100 150 200 250 300 Non-Repetitive surge current, l FSM (A) Junction capacitance, C T (pF) 10000 Average forward current, l F(AV) (A) www.nellsemi.com 100000 At any rated load condition and with rated V RRM applied following surge 10000 1000 10 100 1000 10000 Square wave pulse duration, t p (µs) Page 4 of 6 RoHS NKSD400-150 Series RoHS SEMICONDUCTOR Nell High Power Products Fig.8 Unclamped lnductive test circuit L High-speed switch IRF460B D.U.T. R g = 25Ω Freewheel diode Current monitor + V d = 25V 40FD04 Note (1) Formula used:T C = T J - (Pd+Pd REV ) x R thJC ; Pd = Forward power loss = l F(AV) x V FM at(l F(AV) /D)(see fig.6) Pd REV = lnverse power loss = V R1 x l R (1-D); l R at V R1 = 80% rated V R TO-244 (Non-Insulated) 35.0 2-Φ7.2 3 3 2 1 Φ5.2 80.0 16.8 7.0 15.0 2-1/4" 20 UNC SCREWS 64 21.0 93 All dimensions in millimeters www.nellsemi.com Page 5 of 6 RoHS NKSD400-150 Series RoHS SEMICONDUCTOR Nell High Power Products TO-244 (Insulated) 23.0 23.0 2-Φ7.2 1 3 2 80.0 16.8 7.0 15.0 3-1/4" 20 UNC SCREWS 67 21.0 93 All dimensions in millimeters www.nellsemi.com Page 6 of 6