GBU8 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Glass Passivated Single-Phase Bridge Rectifier, 8A GBU8D Thru GBU8M 22±0.1 15.2±0.1 3.6±0.1 10±0.1 18.5±0.1 3.5±0.15 2±0.1 + ~ ~ 17.8±0.5 0.5±0.01 1±0.05 5.08±0.05 All dimensions in millimeters FEATURES UL recognition file number E320098 Typical IR less than 2.0 µA High surge current capability Low thermal resistance Compliant to RoHS Isolation voltage up to 2500V TYPICAL APPLICATIONS ~ General purpose use in AC/DC bridge full wave + ~ rectification for big power supply, field supply for DC motor, industrial automation applications. ADVANTAGE PRIMARY CHARACTERRISTICS International standard package Epoxy meets UL 94 V-0 flammability rating Small volume, light weight Small thermal resistance High heat-conduction rate Low temperature rise High temperature soldering guaranteed : 260°C/10 second, 2.3kg tension force Weight: 4.0g (0.14 ozs) www.nellsemi.com Page 1 of 3 IF(AV) 8A V RRM 400V to 1000V I FSM 200A IR 5 µA VF 1.10V T J max. 150ºC GBU8 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) GBU8 PARAMETER UNIT SYMBOL D G J K M Maximum repetitive peak reverse voltage V RRM 200 400 600 800 1000 V Peak reverse non-repetitive voltage V RSM 300 500 700 900 1100 V V DC 200 400 600 800 1000 V Maximum DC blocking voltage Maximum average forward rectified output current, T c = 85°C Peak forward surge current single sine-wave superimposed on I F(AV) 8 A I FSM 200 A I 2t 166 A 2s V ISO 2500 V TJ -40 to 150 ºC T STG -40 to 150 ºC rated load Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing RMS isolation voltage from case to leads Operating junction storage temperature range Storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER Maximum instantaneous forward drop per diode Maximum reverse DC current at rated DC blocking GBU8 TEST CONDITIONS SYMBOL I F = 4A VF D T A = 25°C voltage per diod G J UNIT K M 1.10 V 5 IR T A = 150°C µA 500 THERMAL AND MECHANICAL (TA = 25°C unless otherwise noted) GBU8 TEST CONDITIONS PARAMETER UNIT SYMBOL D Typical thermal resistance junction to case Single-side heat dissipation, sine half wave Mounting torque ± 10 % A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. to heatsink M3 R θJC (1) Approximate weight Notes (1) With heatsink, single side heat dissipation, half sine wave. Ordering Information Tabel Device code www.nellsemi.com GBU 8 K 1 2 3 1 - Product type : “GBU” Package,1Ø Bridge 2 - I F(AV) rating : "8" for 8A 3 - Voltage code : D = 200V G = 400V J = 600V K = 800V M = 1000V Page 2 of 3 G J K M 4.0 °C/W 0.8 N.m 4.0 g GBU8 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Derating curve for output rectified current Fig.2 Maximum non-repetitive peak forward surge current per bridge element 10 300 250 8 Forward surge current, (A) Average forward output current, (A) T J = 125°C 6 4 2 200 150 100 50 0 0 0 50 100 100 Ambient temperature (°C) Number of cycles at 50H z Fig.3 Typical reverse characteristics per bridge element Fig.4 Typical forward characteristics per bridge element 1000 100 Instantaneous forward current, (A) Instantaneous reverse current, (μA) 10 1 150 100 10 TJ = 1 25°C 1.0 0.1 10 1.0 T J = 25°C 5°C TJ = 2 0.1 0.6 0.01 0 20 40 60 80 100 120 140 Percent of rated peak reverse voltage (%) www.nellsemi.com 0.7 0.8 0.9 1.0 1.1 Forward voltage (V) Page 3 of 3 1.2 1.3