NEL GBJ10

RoHS
GBJ10 Series RoHS
SEMICONDUCTOR
Nell High Power Products
Glass Passivated Single-Phase Bridge Rectifier, 10A
GBJ1004 Thru GBJ1012
30±0.3
.2±
0.2
4.6±0.1
+
~
5±0.2
11.2±0.2
Ø3
20±0.3
3.6±0.1
~
2.2±0.2
2.7±0.1
1±0.1
60
0.65±0.05
7.5±0.2
°±
5°
0.5±0.1
0.5±0.1
10±0.2
17.5±0.2
4±0.2
2.5±0.2
7.5±0.2
All dimensions in millimeters
FEATURES
UL recognition file number E320098
Typical IR less than 2.0 µA
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
+
TYPICAL APPLICATIONS
~
~
General purpose use in AC/DC bridge full wave
rectification for big power supply, field supply for DC motor,
industrial automation applications.
ADVANTAGE
PRIMARY CHARACTERRISTICS
IF(AV)
10A
V RRM
400V to 1200V
I FSM
200A
International standard package
IR
Epoxy meets UL 94 V-O flammability rating
V
F
Small volume, light weight
T
J
max.
Small thermal resistance
High heat-conduction rate
Low temperature rise
High temperature soldering guaranteed : 260°C/10 second, 2.3kg tension force
Weight: 6.5g (0.23 ozs)
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Page 1 of 3
5 µA
1.10V
150ºC
RoHS
GBJ10 Series RoHS
SEMICONDUCTOR
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted)
GBJ10
PARAMETER
UNIT
SYMBOL
04
06
08
10
12
Maximum repetitive peak reverse voltage
V RRM
400
600
800
1000
1200
V
Peak reverse non-repetitive voltage
V RSM
500
700
900
1100
1300
V
Maximum DC blocking voltage
V DC
400
600
800
1000
1200
V
Maximum average forward rectified output current, T c = 85°C
I F(AV)
10
A
I FSM
200
A
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
I 2t
166
A 2s
RMS isolation voltage from case to leads
V ISO
2550
V
TJ
-40 to 150
ºC
T STG
-40 to 150
ºC
Peak forward surge current single sine-wave superimposed on
rated load
Operating junction storage temperature range
Storage temperature range
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
GBJ10
TEST
CONDITIONS
PARAMETER
04
I F = 5A
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
06
VF
T A = 25°C
voltage per diod
UNIT
SYMBOL
08
10
12
1.10
V
5
IR
T A = 150°C
µA
500
THERMAL AND MECHANICAC (TA = 25°C unless otherwise noted)
GBJ10
TEST CONDITIONS
PARAMETER
UNIT
SYMBOL
04
Typical thermal resistance
junction to case
Single-side heat dissipation, sine
half wave
Mounting
torque
± 10 %
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
to heatsink M3
R θJC (1)
Approximate weight
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
Device code
GBJ
10
10
3
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1
-
Product type : “GBJ” Package,1Ø Bridge
2
-
I F(AV) rating : "10" for 10A
3
-
Voltage code : code x 100 = VRRM
Page 2 of 3
06
08
10
12
1.0
°C/W
0.8
N.m
6.5
g
RoHS
GBJ10 Series RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.1 Derating curve for output rectified current
Fig.2 Maximum non-repetitive peak forward
surge current per bridge element
250
Average output current, amperes (A)
Average forward output current, amperes (A)
12
10
8
6
4
200
150
100
50
8.3ms Single Half Sine-Wave
JEDEC method
0
0
0
50
100
150
10
1
Number of cycles at 50H z
Ambient temperature (°C)
Fig.3 Typical reverse characteristics per
bridge element
Fig.4 Typical forward characteristics per
bridge element
100
100
Instantaneous forward current, amperes (A)
Instantaneous reverse output micro, amperes (μA)
100
10
TJ =
100
°C
1.0
0.1
TJ = 2
5°C
0.01
10
1.0
T J = 25°C
0.1
0
20
40
60
80
100
120
140
Percent of rated peak reverse voltage (%)
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0
0.2
0.6
1.0
Forward voltage (v)
Page 3 of 3
1.4
1.8