V-Chip Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS DEVICES • SURFACE MOUNTABLE V-CHIP STYLE • LEAD-FREE FINISH NEXC Series *For high temperature +85°C, high temperature reflow parts see the NEXCW series CHARACTERISTICS Rated Voltage Range Rated Capacitance Range Operating Temp. Range Capacitance Tolerance 3.5 & 5.5VDC 0.047F ~ 1.0F (47,000μF ~ 1,000,000μF) -25°C ~ +70°C +80%/-20% (Z) Load Life Test +70°C 1,000 hours Δ Capacitance Change Maximum ESR Current at 30 minutes Temperature Cycling (5 cycles, -25 ~ +70°C Δ Capacitance Change Maximum ESR Current at 30 minutes Humidity Resistance (240 hours @ 40°C/90% RH) Δ Capacitance Change Maximum ESR Less than ±30% of initial measured value Less than 200% of the specified maximum value Less than 200% of the specified maximum value Within +80%/-20% of specified value Less than specified maximum value Less than specified maximum value Less than ±20% of initial measured value Less than 120% of the specified maximum value Current at 30 minutes Less than 120% of the specified maximum value STANDARD VALUES AND SPECIFICATIONS Capacitance Value (F) Discharge NIC P/N Working Voltage (VDC) Holding Voltage (VDC min.) Max. Current @ 30 minutes (mA) Max. ESR @ 1KHz (Ω) NEXC104Z3.5V10.5X5.5TRF 0.1 3.5 - 0.090 50 NEXC224Z3.5V10.5X5.5TRF 0.22 3.5 - 0.200 25 NEXC474Z3.5V10.5X8.5TRF 0.47 3.5 - 0.420 25 NEXC473Z5.5V10.5X5.5TRF 0.047 5.5 4.2 0.071 50 NEXC104Z5.5V10.5X5.5TRF 0.1 5.5 4.2 0.150 25 NEXC224Z5.5V10.5X8.5TRF 0.22 5,5 4.2 0.330 25 NEXC474Z5.5V16X9.5TRF 0.47 5.5 4.2 0.710 13 NEXC105Z5.5V21X10.5TRF 1.0 5.5 4.2 1.500 7 CASE DIMENSIONS (mm) Case Size 10.5 x 5.5 10.5 x 8.5 16 x 9.5 21 x 10.5 Dφ ± 0.5 10.5 10.5 16.0 21.0 L max. 5.5 8.5 9.5 10.5 A/B ±0.2 10.8 10.8 16.3 21.6 I 3.6 ±0.5 3.6 ±0.5 6.8 ±1.0 7.0 ±1.0 W 1.2 1.2 1.2 1.4 P 5.0 5.0 5.0 10.0 + I I I - w Dφ A 0.3mm max. L P B PRECAUTIONS WASHING is NOT RECOMMENDED. Additional precautions can be found at www.niccomp.com/precautions If in doubt or uncertainty, please review your specific application - process details with NIC’s technical support personnel: [email protected] NIC COMPONENTS CORP. www.niccomp.com www.lowESR.com www.RFpassives.com SPECIFICATIONS ARE SUBJECT TO CHANGE www.SMTmagnetics.com 1 V-Chip Memory Back-Up Capacitors LAND PATTERN DIMENSIONS (mm) Case Diameter 10.5 16.0 21.0 R S T 5.0 5.0 10.0 4.6 10.0 10.5 2.5 2.5 3.5 NEXC Series COMPONENT OUTLINE T S S R Temperature - Deg. C STANDARD RECOMMENDED REFLOW PROFILE Peak Temperature (235°C for 10 sec.) 250 200 150 100 Cool Down Time above 200°C 30 sec. max. 50 25 0 Pre-heat 160°C 120 sec. max. Time 1. The temperatures shown are the surface temperature values on the top of the can and on the capacitor terminals. 2. 2x reflow process maximum. Capacitor should be allowed to return to room temperature before second reflow process. 2 NIC COMPONENTS CORP. www.niccomp.com www.lowESR.com www.RFpassives.com SPECIFICATIONS ARE SUBJECT TO CHANGE www.SMTmagnetics.com V-Chip Memory Back-Up Capacitors NEXC Series CARRIER TAPE DIMENSIONS (mm) Case Size 10.5 x 5.5 10.5 x 8.5 16 x 9.5 21 x 10.5 A 11.4 11.4 18.0 23.0 B 13.0 13.0 20.0 25.0 D 1.55 1.55 1.55 1.55 E 1.75 1.75 1.75 1.75 F 11.5 11.5 14.2 20.2 G 28.4 40.4 P 4.0 4.0 4.0 4.0 P P1 16.0 16.0 24.0 32.0 T1 0.4 0.4 0.5 0.5 T2 6.0 8.4 10.0 12.0 1.5∅ D +0.1/- W 24.0 24.0 32.0 44.0 1.75 ± Quantity/Reel 1,000 500 200 150 T1 E - W F B + P1 A T2 Feeding REEL DIMENSIONS (mm) Case Size 10.5 x 5.5 10.5 x 8.5 16 x 9.5 21 x 10.5 A ± 2.0 380 380 330 370 B ± 1.0 80.0 100.0 100.0 100.0 C ± 0.5 13.0 13.0 13.0 13.0 D ± 0.8 21.0 21.0 21.0 21.0 E ± 0.5 2.0 2.0 2.0 2.0 W 25.5 25.5 33.5 45.5 t 3.0 2.8 2.8 2.8 t C E A B W NIC COMPONENTS CORP. www.niccomp.com www.lowESR.com www.RFpassives.com SPECIFICATIONS ARE SUBJECT TO CHANGE www.SMTmagnetics.com 3