Hardware Documentation D a t a Sh e e t ® HAL 880 Programmable Linear Hall-Effect Sensor Edition Mar. 6, 2012 DSH000152_003EN HAL880 DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Micronas Trademarks – HAL Micronas Patents EP 0 953 848, EP 0 647 970, EP 1 039 357, EP 1 575 013, EP 1 949 034 Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers’ technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. 2 Mar. 6, 2012; DSH000152_003EN Micronas HAL880 DATA SHEET Contents Page Section Title 4 4 4 5 5 5 5 5 5 6 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. 1.7.1. 1.7.2. Introduction Major Applications Features Marking Code Operating Junction Temperature Range (TJ) Hall Sensor Package Codes Solderability and Welding Pin Connections and Short Descriptions TO92UT Package SOIC8 Package 7 7 9 12 12 2. 2.1. 2.2. 2.3. 2.3.1. Functional Description General Function Digital Signal Processing and EEPROM Calibration Procedure General Procedure 14 14 19 19 19 20 20 20 21 23 24 24 24 24 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.4.2. 3.5. 3.6. 3.6.1. 3.7. 3.8. 3.9. 3.10. Specifications Outline Dimensions Dimensions of Sensitive Area Package Parameters and Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life for TO92UT Package Storage and Shelf Life for SOIC8 Package Recommended Operating Conditions Characteristics Definition of Sensitivity Error ES Open-Circuit Detection Power-On Operation Overvoltage and Undervoltage Detection Magnetic Characteristics 25 25 25 26 27 27 4. 4.1. 4.2. 4.3. 4.4. 4.5. Application Notes Application Circuit Use of two HAL880 in Parallel Temperature Compensation Ambient Temperature EMC and ESD 28 28 28 31 32 32 35 5. 5.1. 5.2. 5.3. 5.4. 5.5. 5.6. Programming of the Sensor Definition of Programming Pulses Definition of the Telegram Telegram Codes Number Formats Register Information Programming Information 36 6. Data Sheet History Micronas Mar. 6, 2012; DSH000152_003EN 3 HAL880 DATA SHEET Programmable Linear Hall-Effect Sensor Release Note: Revision bars indicate significant changes to the previous edition. 1. Introduction The HAL880 is a new member of the Micronas family of programmable linear Hall sensors. The HAL880 complements the existing Hall-effect sensor family HAL8xy to the lower end. It is designed to fulfill the requirements of today’s state-of-the-art applications for linear and angular measurements that require programmability to compensate system tolerances. The HAL880 is an universal magnetic field sensor with a linear output based on the Hall effect. The IC can be used for angle or distance measurements if combined with a rotating or moving magnet. The major characteristics like magnetic field range, sensitivity, output quiescent voltage (output voltage at B = 0 mT), and output voltage range are programmable in a non-volatile memory. The sensor has a ratiometric output characteristic, which means that the output voltage is proportional to the magnetic flux and the supply voltage. The sensor is designed for hostile industrial and automotive applications and operates with typically 5 V supply voltage in the ambient temperature range from 40 °C up to 125 °C. The HAL 880 is available in the very small leaded packages TO92UT-1, TO92UT-2 and in the eight-pin SOIC8 SMD package. 1.1. Major Applications Due to the sensor’s versatile programming characteristics and low temperature drifts, the HAL880 is the optimal system solution for applications such as: – contactless potentiometer, – rotary position measurement, – linear movement, – current measurements. 1.2. Features – programmable linear Hall effect sensor with ratiometric output and digital signal processing – 12-bit analog output The HAL880 features a temperature-compensated Hall plate with choppered offset compensation, an A/D converter, digital signal processing, a D/A converter with output driver, an EEPROM memory with redundancy and lock function for the calibration data, an EEPROM for customer serial number, a serial interface for programming the EEPROM, and protection devices at all pins. The internal digital signal processing is of great benefit because analog offsets, temperature shifts, and mechanical stress do not degrade the sensor accuracy. The HAL880 is programmable by modulating the supply voltage. No additional programming pin is needed. The easy programmability allows a 2-point calibration by adjusting the output voltage directly to the input signal (like mechanical angle, distance, or current). Individual adjustment of each sensor during the customer’s manufacturing process is possible. With this calibration procedure, the tolerances of the sensor, the magnet, and the mechanical positioning can be compensated in the final assembly. This offers a lowcost alternative for all applications that presently need mechanical adjustment or laser trimming for calibrating the system. In addition, the temperature compensation of the Hall IC can be fit to common magnetic materials by programming first and second order temperature coefficients of the Hall sensor sensitivity. The calculation of the individual sensor characteristics and the programming of the EEPROM memory can easily be done with a PC and the application kit from Micronas. 4 – multiple programmable magnetic characteristics in a non-volatile memory (EEPROM) with redundancy and lock function – open-circuit (ground and supply line break detection) with 10 k pull-up and pull-down resistor, overvoltage and undervoltage detection – for programming an individual sensor within several sensors in parallel to the same supply voltage, a selection can be done via the output pin – temperature characteristics are programmable for matching common magnetic materials – programmable clamping function – programming through a modulation of the supply voltage – operates from 40 °C up to 140 °C junction temperature – operates from 4.5 V up to 5.5 V supply voltage in specification and functions up to 8.5 V – operates with static magnetic fields and dynamic magnetic fields up to 1 kHz – overvoltage and reverse-voltage protection at all pins – magnetic characteristics extremely robust against mechanical stress – short-circuit protected push-pull output – EMC and ESD optimized design Mar. 6, 2012; DSH000152_003EN Micronas HAL880 DATA SHEET 1.3. Marking Code 1.6. Solderability and Welding The HAL880 has a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Solderability Type HAL880 Temperature Range During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not be exceeded. K Welding (only TO92UT package) 880K Device terminals should be compatible with laser and resistance welding. Please note, that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1.4. Operating Junction Temperature Range (TJ) The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). K: TJ = 40 °C to +140 °C The relationship between ambient temperature (TA) and junction temperature is explained in Section 4.4. on page 27. 1.7. Pin Connections and Short Descriptions 1.7.1. TO92UT Package 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: K Package: UT for TO92UT-1/-2 DJ for SOIC8-1 Type: 880 Example: HAL880UT-K Pin No. Pin Name Type Short Description 1 VDD IN Supply Voltage and Programming Pin 2 GND 3 OUT Ground OUT Push-Pull Output and Selection Pin Type: 880 Package: TO92UT Temperature Range: TJ = 40 °C to +140 °C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors: Ordering Codes, Packaging, Handling”. 1 VDD OUT 3 2 GND Fig. 1–1: Pin configuration TO92UT Micronas Mar. 6, 2012; DSH000152_003EN 5 HAL880 DATA SHEET 1.7.2. SOIC8 Package Pin No. Pin Name Type Short Description 1 VDD IN Supply Voltage and Programming Pin 2,5,6,7,8 GND Ground 3 NC Not Connected 4 OUT 1 OUT Push-Pull Output and Selection Pin VDD OUT 4 2 GND (5 - 8) 3 NC Fig. 1–2: Pin configuration SOIC8 Note: Pins number 2, 5, 6, 7, and 8 must be connected to GND. 6 Mar. 6, 2012; DSH000152_003EN Micronas HAL880 DATA SHEET analog output is switched off during the communication. Several sensors in parallel to the same supply and ground line can be programmed individually. The selection of each sensor is done via its output pin. 2.1. General Function The HAL880 is a monolithic integrated circuit which provides an output voltage proportional to the magnetic flux through the Hall plate and proportional to the supply voltage (ratiometric behavior). The external magnetic field component perpendicular to the branded side of the package generates a Hall voltage. The Hall IC is sensitive to magnetic north and south polarity. This voltage is converted to a digital value, processed in the Digital Signal processing Unit (DSP) according to the settings of the EEPROM registers, converted to an analog voltage with ratiometric behavior, and stabilized by a push-pull output transistor stage. The function and the parameters for the DSP are explained in Section 2.2. on page 9. The open-circuit detection provides a defined output voltage if the VDD or GND line is broken. Internal temperature compensation circuitry and the choppered offset compensation enables operation over the full temperature range with minimal changes in accuracy and high offset stability. The circuitry also rejects offset shifts due to mechanical stress from the package. The non-volatile memory consists of redundant and nonredundant EEPROM cells. The non-redundant EEPROM cells are only used to store production information inside the sensor. In addition, the sensor IC is equipped with devices for overvoltage and reverse-voltage protection at all pins. The setting of the LOCK register disables the programming of the EEPROM memory for all time. This register cannot be reset. VDD (V) As long as the LOCK register is not set, the output characteristic can be adjusted by programming the EEPROM registers. The IC is addressed by modulating the supply voltage (see Fig. 2–1). In the supply voltage range from 4.5 V up to 5.5 V, the sensor generates an analog output voltage. After detecting a command, the sensor reads or writes the memory and answers with a digital signal on the output pin. The HAL 880 VDD 8 7 VOUT (V) 2. Functional Description 6 5 VDD OUT digital analog GND Fig. 2–1: Programming with VDD modulation VDD Internally stabilized Supply and Protection Devices Switched Hall Plate Temperature Dependent Bias Oscillator A/D Converter Digital Signal Processing Open-circuit, Overvoltage, Undervoltage Detection D/A Converter Protection Devices OUT Analog Output EEPROM Memory Lock Control Open-Circuit Detection GND Fig. 2–2: HAL880 block diagram Micronas Mar. 6, 2012; DSH000152_003EN 7 HAL880 DATA SHEET Digital Output 14 bit Digital Signal Processing A/D Converter TC TCSQ 5 bit 3 bit Digital Filter Mode Register Range Filter 2 bit 1 bit Multiplier Sensitivity 14 bit Adder Limiter D/A Converter VOQ Min-Out Max-Out Lock Micronas 11 bit 8 bit 9 bit 1 bit Register Other: 5 bit TC Range Select 2 bit EEPROM Memory Lock Control Fig. 2–3: Details of EEPROM and digital signal processing 8 Mar. 6, 2012; DSH000152_003EN Micronas HAL880 DATA SHEET 2.2. Digital Signal Processing and EEPROM The DSP is the main part of this sensor and performs the signal conditioning. The parameters for the DSP are stored in the EEPROM registers. The details are shown in Fig. 2–3 on page 8. Terminology: SENSITIVITY: name of the register or register value Sensitivity: name of the parameter The EEPROM registers consist of four groups: Group 1 contains the registers for the adaption of the sensor to the magnetic system: MODE for selecting the magnetic field range and filter frequency, TC, TCSQ and TC-range for the temperature characteristics of the magnetic sensitivity. Group 2 contains the registers for defining the output characteristics: SENSITIVITY, VOQ, CLAMP-LOW, and CLAMP-HIGH. The output characteristic of the sensor is defined by these 4 parameters. – The parameter VOQ (Output Quiescent Voltage) corresponds to the output voltage at B = 0 mT. – The parameter Sensitivity defines the magnetic sensitivity: V OUT Sensitivity = ---------------B A/D converter offset compensation, and several other special settings. An external magnetic field generates a Hall voltage on the Hall plate. The ADC converts the amplified positive or negative Hall voltage (operates with magnetic north and south poles at the branded side of the package) to a digital value. The digital signal is filtered in the internal low-pass filter and manipulated according to the settings stored in the EEPROM. The digital value after signal processing is readable in the D/A-READOUT register. Depending on the programmable magnetic range of the Hall IC, the operating range of the A/D converter is from 30 mT … +30 mT up to 100 mT … +100 mT. During further processing, the digital signal is multiplied with the sensitivity factor, added to the quiescent output voltage and limited according to the clamping voltage. The result is converted to an analog signal and stabilized by a push-pull output transistor stage. The D/A-READOUT at any given magnetic field depends on the programmed magnetic field range, the low-pass filter, TC values, CLAMP-LOW and CLAMP-HIGH. The D/A-READOUT range is min. 0 and max. 16383. Note: During application design, it should be taken into consideration that the maximum and minimum D/A-READOUT should not saturate in the operational range of the specific application. Range – The output voltage can be calculated as: The RANGE bits are bit 2 and 3 of the MODE register; they define the magnetic field range of the A/D converter. V OUT Sensitivity B + V OQ The output voltage range can be clamped by setting the registers CLAMP-LOW and CLAMP-HIGH in order to enable failure detection (such as short-circuits to VDD or GND and open connections). Magnetic Field Range RANGE 30mT...30 mT 0 60 mT...60 mT 1 Group 3 contains the general purpose register GP. The GP register can be used to store customer information, like a serial number after manufacturing. Micronas will use this GP REGISTER to store information such as lot number, wafer number, x and y position of the die on the wafer, etc. This information can be readout by the customer and stored in its own data base or it can stay in the sensor as it is. 80 mT...80 mT 2 100 mT...100 mT 3 Group 4 contains the Micronas registers and LOCK for the locking of all registers. The Micronas registers are programmed and locked during production. These registers are used for oscillator frequency trimming, Micronas Mar. 6, 2012; DSH000152_003EN 9 HAL880 DATA SHEET Filter The FILTER bit is bit number 4 of the MODE register; it defines the 3 dB frequency of the digital low pass filter. TC-Range [ppm/k] GROUP 3100 to 1800 0 1750 to 550 2 3 dB Frequency FILTER 500 to +450 (default value) 1 500 Hz 0 +450 to +1000 3 1 kHz 1 TC (5 bit) and TCSQ (3 bit) have to be selected individually within each of the four ranges. For example: 0 ppm/k requires TC-Range = 1, TC = 15 and TCSQ = 1. Bit Time The BITTIME bit is bit number 5 of the MODE register; It defines the protocol bit time for the communication between the sensor and the programmer board. Bit Time BITTIME 1:64 (Typ. 1.75 ms) 0 1:128 (Typ. 3.5 ms) 1 Sensitivity The SENSITIVITY register contains the parameter for the multiplier in the DSP. The Sensitivity is programmable between 4 and 4. For VDD = 5 V, the register can be changed in steps of 0.00049. For all calculations, the digital value from the magnetic field of the D/A converter is used. This digital information is readable from the D/A-READOUT register. V out 16384 SENSITIVITY = --------------------------------------------------------------2 DA-Readout VDD Output Format The OUTPUTMODE bits are the bits numbers 6 to 7 of the MODE register. Output Format OUTPUTMODE Analog Output (12 bit) 0 The VOQ register contains the parameter for the adder in the DSP. VOQ is the output voltage without external magnetic field (B = 0 mT) and programmable from VDD up to VDD. For VDD = 5 V, the register can be changed in steps of 4.9 mV. TC Register The temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in order to compensate for the change of the magnetic strength with temperature. The adaption is done by programming the TC (Temperature Coefficient) and the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and the curvature of the temperature dependence of the magnetic sensitivity can be matched to the magnet and the sensor assembly. As a result, the output voltage characteristic can be fixed over the full temperature range. The sensor can compensate for linear temperature coefficients ranging from about 3100 ppm/K up to 1000 ppm/K and quadratic coefficients from about 7 ppm/K² to 2 ppm/K². The full TC range is separated in the following four ranges: 10 VOQ Note: If VOQ is programmed to a negative voltage, the maximum output voltage is limited to: Mar. 6, 2012; DSH000152_003EN V OUTmax = V OQ + V DD Micronas HAL880 DATA SHEET Clamping Voltage D/A-Readout The output voltage range can be clamped in order to detect failures like short circuits to VDD or GND or an open circuit. The 14-bit D/A-READOUT register delivers the actual digital value of the applied magnetic field after the signal processing. This register can be read out and is the basis for the calibration procedure of the sensor in the system environment. The CLAMP-LOW register contains the parameter for the lower limit. The lower clamping voltage is programmable between 0 V and VDD/2. For VDD = 5 V, the register can be changed in steps of 9.77 mV. The CLAMP-HIGH register contains the parameter for the upper limit. The upper clamping voltage is programmable between 0 V and VDD. For VDD = 5 V, in steps of 9.77 mV. Note: The MSB and LSB are reversed compared with all the other registers. Please reverse this register after readout. GP Register This register can be used to store some information, such as production date or customer serial number. Micronas will store production lot number, wafer number, and x, y coordinates in three blocks of this registers. The total register contains of four blocks with a length of 13 bit each. The customer can read out this information and store it in his production data base for reference or he can store own production information. Note: To enable programming of the GP register, bit 0 of the MODE register has to be set to 1. This register is not a guarantee for traceability. LOCKR By setting the first bit of this 2-bit register, all registers will be locked and the sensor will no longer respond to any supply voltage modulation. This bit is active after the first power-off and power-on sequence after setting the LOCK bit. Warning: This register cannot be reset! Micronas Mar. 6, 2012; DSH000152_003EN 11 HAL880 DATA SHEET 2.3. Calibration Procedure Step 3: Define Calibration Points 2.3.1. General Procedure The calibration points 1 and 2 can be set inside the specified range. The corresponding values for VOUT1 and VOUT2 result from the application requirements. For calibration in the system environment, the application kit from Micronas is recommended. It contains the hardware for the generation of the serial telegram for programming (Programmer Board Version 5.1) and the corresponding software (PC880) for the input of the register values. For the individual calibration of each sensor in the customer application, a two-point adjustment is recommended. The calibration has be done as follows: Lowclampingvoltage V OUT1,2 Highclampingvoltage For highest accuracy of the sensor, calibration points near the minimum and maximum input signal are recommended. The difference of the output voltage between calibration point 1 and calibration point 2 should be more than 3.5 V. Step 1: Input of the registers which need not be adjusted individually Step 4: Calculation of VOQ and Sensitivity The magnetic circuit, the magnetic material with its temperature characteristics, the filter frequency, the output mode and the GP register value are given for this application. Therefore, the values of the following registers should be identical for all sensors of the customer application. – FILTER (according to the maximum signal frequency) – RANGE (according to the maximum magnetic field at the sensor position) Set the system to calibration point 1 and read the register D/A-READOUT. The result is the value D/A-READOUT1. Now, set the system to calibration point 2, read the register D/A-READOUT again, and get the value D/A-READOUT2. With these values, and the target values VOUT1 and VOUT2, for the calibration points 1 and 2, respectively, the values for Sensitivity and VOQ are calculated as: – OUTPUTMODE – TC, TCSQ, and TC-RANGE (depends on the material of the magnet and the other temperature dependencies of the application) – GP (if the customer wants to store own production information, it is not necessary to change this register) The clamping voltages should be set after the adjustment process. This avoids clamping of the D/A-Readout value during calibration, because the D/A-Readout value is needed for the Sensitivity and Voq calculations during calibration. Write the appropriate settings into the HAL880 registers. Step 2: Initialize DSP 1 Vout2 – Vout1 16384 Sensitivity = --- ----------------------------------------------------------------------------------- --------------2 D/A-Readout2 – D/A-Readout1 5 1 16384- – V OQ = ------ Vout2 -----------------------------------16 5 5 D/A-Readout2 – 8192 Sensitivity 2 -----------1024 This calculation has to be done individually for each sensor. Next, write the calculated values for Sensitivity and VOQ into the IC for adjusting the sensor. At that time, it is also possible to store the application specific values for Clamp-Low and Clamp-High into the sensors EEPROM. As the D/A-READOUT register value depends on the settings of SENSITIVITY, VOQ, and CLAMP-LOW/HIGH, these registers have first to be initialized with defined values: – VOQINITIAL = 2.5 V – SensitivityINITIAL = 0.5 – Clamp-Low = 0 V – Clamp-High = 4.999 V 12 Mar. 6, 2012; DSH000152_003EN Micronas HAL880 DATA SHEET The sensor is now calibrated for the customer application. However, the programming can be changed again and again if necessary. Note: For a recalibration, the calibration procedure has to be started at the beginning (step 1). A new initialization is necessary, as the initial values from step 1 are overwritten in step 4. Step 5: Locking the Sensor The last step is activating the LOCK function by programming the LOCK bit. Please note that the LOCK function becomes effective after power-down and power-up of the Hall IC. The sensor is now locked and does not respond to any programming or reading commands. Warning: This register can not be reset! Micronas Mar. 6, 2012; DSH000152_003EN 13 HAL880 DATA SHEET 3. Specifications 3.1. Outline Dimensions Fig. 3–1: TO92UT-1 Plastic Transistor Standard UT package, 3 leads, spread Weight approximately 0.12 g 14 Mar. 6, 2012; DSH000152_003EN Micronas HAL880 DATA SHEET Fig. 3–2: TO92UT-2 Plastic Transistor Standard UT package, 3 leads Weight approximately 0.12 g Micronas Mar. 6, 2012; DSH000152_003EN 15 HAL880 DATA SHEET Fig. 3–3: TO92UT-1: Dimensions ammopack inline, spread 16 Mar. 6, 2012; DSH000152_003EN Micronas HAL880 DATA SHEET Fig. 3–4: TO92UT-2: Dimensions ammopack inline, not spread Micronas Mar. 6, 2012; DSH000152_003EN 17 HAL880 DATA SHEET Fig. 3–5: SOIC8-1: Plastic Small Outline IC package, 8 leads, gullwing bent, 150 mil Ordering code: DJ Weight approximately 0.086 g 18 Mar. 6, 2012; DSH000152_003EN Micronas HAL880 DATA SHEET 3.2. Dimensions of Sensitive Area 0.25 mm x 0.25 mm 3.3. Package Parameters and Positions of Sensitive Areas TO92UT-1/-2 SOIC8 x 0 mm nominal y 1.5 mm nominal 0.13 mm nominal A4 0.3 mm nominal 0.38 mm nominal Bd 0.3 mm 0.3 mm D1 4.05 mm 0.05 mm H1 min. 22.0 mm max. 24.1 mm 3.4. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Max. Unit Comment VDD Supply Voltage 1 8.5 8.5 V < 96 hrs (not additive) VDD Supply Voltage 1 16 16 V < 1 hr (not additive) 1) IDD Reverse Supply Current 1 50 mA 1) not additive VOUT Output Voltage 3 or 4 52) 8.5 V 1) not additive 52) 16 V < 1 hr (not additive) 1) VOUT VDD Excess of Output Voltage over Supply Voltage 3 or 4,1 2 V not additive IOUT Continuous Output Current 3 or 4 10 10 mA not additive tSh Output Short Circuit Duration 3 or 4 10 min not additive 1) 2) as long as TJmax is not exceeded internal protection resistor = 50 Micronas Mar. 6, 2012; DSH000152_003EN 19 HAL880 DATA SHEET 3.4.1. Storage and Shelf Life for TO92UT Package The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. 3.4.2. Storage and Shelf Life for SOIC8 Package The SOIC8 package is a moisture-sensitive Surface Mount Device. The Moisture Sensitivity Level (MSL) is defined according to JEDEC J-STD-020 (Moisture/ Reflow Sensitivity Classification for Nonhermetic Solid-State Surface Mount Devices). The device is packed acc. to IPC/JEDEC J-STD-033: Handling, Packing, Shipping and Use of Moisture/Reflow Sensitive Surface Mount Devices. By using these procedures, safe and damage-free reflow can be achieved. Please follow the instructions printed on each Moisture Barrier Bag. These instructions contain information about the Moisture Sensitivity Level “MSL”, the maximum reflow temperature “Peak Package Body Temp.” and the time frame “Time for Mounting after opening the MBB”. The dry-bag shelf life capability of sealed dry-bags is minimum 12 months starting from the “Bag seal date” printed on each bag. If moisture-sensitive components have been exposed to ambient air for longer than the specified time according to their MSL, or the humidity indicator card indicates too much moisture after opening a Moisture Barrier Bag (MBB), the components have to be baked prior to the assembly process. Please refer to IPC/ JEDEC J-STD-033 for details. Please be aware that packing materials may not withstand higher baking temperatures. 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Typ. Max. Unit VDD Supply Voltage 1 4.5 5 5.5 V IOUT Continuous Output Current 3 or 4 1.2 1.2 mA RL Load Resistor 3 or 4 5.0 10 k CL Load Capacitance 3 or 4 0.33 100 1000 nF NPRG Number of EEPROM Programming Cycles 100 cycles 0°C < Tamb < 55°C TJ Junction Temperature Range 1) 40 40 40 125 150 170 °C for 8000 h (not additive) for 2000 h (not additive) for 1000 h (not additive) 1) 20 Remarks Can be pull-up or pull-down resistor Depends on the temperature profile of the application. Please contact Micronas for life time calculations. Mar. 6, 2012; DSH000152_003EN Micronas HAL880 DATA SHEET 3.6. Characteristics at TJ = 40 °C to +140 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking, at Recommended Operating Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VDD = 5 V. Symbol Parameter Pin No. Min. Typ. Max. Unit IDD Supply Current over Temperature Range 1 7 10 mA VDDZ Overvoltage Protection at Supply 1 17.5 20 V IDD = 25 mA, TJ = 25 °C, t = 20 ms VOZ Overvoltage Protection at Output 3 or 4 17 19.5 V IO = 10 mA, TJ = 25 °C, t = 20 ms Resolution 3 or 4 12 bit ratiometric to VDD 1) Non-Linearity of Output Voltage over Temperature 3 or 4 1.0 0 1.0 % % of supply voltage2) ER Ratiometric Error of Output over Temperature (Error in VOUT / VDD) 3 or 4 1.0 0 1.0 % VOUT1 - VOUT2> 2 V during calibration procedure ES Error in Magnetic Sensitivity over Temperature Range 3 or 4 6 0 6 % (see Section 3.6.1. on page 23) VOUTCL Accuracy of Output Voltage at Clamping Low Voltage over Temperature Range 3 or 4 30 0 30 mV RL = 5 k, VDD = 5 V VOUTCH Accuracy of Output Voltage at Clamping High Voltage over Temperature Range 3 or 4 30 0 30 mV RL = 5 k, VDD = 5 V VOUTH Upper Limit of Signal Band3) 3 or 4 4.65 4.8 V VDD = 5 V, 1 mA IOUT 1mA VOUTL Lower Limit of Signal Band3) 3 or 4 0.2 0.35 V VDD = 5 V, 1 mA IOUT 1mA fADC Internal ADC Frequency over Temperature Range 128 kHz tr(O) Step Response Time of Output 3 or 4 1 0.5 2 1 ms ms INL Conditions For Vout = 0.35 V ... 4.65 V; VDD = 5 V, Sensitivity 0.95 3 dB Filter frequency = 500 Hz 3 dB Filter frequency = 1 kHz CL = 10 nF, time from 10% to 90% of final output voltage for a step like signal Bstep from 0 mT to Bmax (se.....) td(O) Delay Time of Output 3 or 4 0.1 0.5 ms CL = 10 nF tPOD Power-Up Time (Time to Reach Stabilized Output Voltage) 1.5 1.7 1.9 ms CL = 10 nF, 90% of VOUT BW Small Signal Bandwidth (3 dB) 3 or 4 1 kHz BAC < 10 mT; 3 dB Filter frequency = 1 kHz VOUTn RMS Noise of Output Voltage 3 or 4 6 15 mV magnetic range = 60 mT4) 3 dB Filter frequency = 500 Hz Sensitivity 0.7; C = 100 nF (VDD & VOUT to GND) DACGE D/A-Converter Glitch Energy 3 or 4 400 nVs 4) ROUT Output Resistance over Recommended Operating Range 3 or 4 1 10 VOUTLmax VOUT VOUTHmin 1) Output 2) DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VDD/4096 if more than 50% of the selected magnetic field range is used (=> Sensitivity 0.95) and the temperature compensation is suitable. INL = VOUT - VOUTLSF with VOUTLSF = Least Square Fit Line voltage based on VOUT measurements at a fixed temperature 3) Signal Band Area with full accuracy is located between VOUTL and VOUTH. The sensor accuracy is reduced below VOUTL and above VOUTH 4) The energy of the impulse injected into the analog output when the code in the D/A-Converter register changes state. This energy is normally specified as the area of the glitch in nVs. Micronas Mar. 6, 2012; DSH000152_003EN 21 HAL880 Symbol DATA SHEET Parameter Pin No. Min. Typ. Max. Unit Conditions TO92UT Packages Thermal Resistance Rthja Junction to Air 235 K/W Measured with a 1s0p board Rthjc Junction to Case 61 K/W Measured with a 1s0p board Rthjs Junction to Solder Point 128 K/W Measured with a 1s1p board 142 K/W Measured with a 1s0p board 88 K/W Measured with a 1s1p board 33 K/W Measured with a 1s0p board 22 K/W Measured with a 1s1p board SOIC8 Package Thermal Resistance Rthja Rthjc Junction to Air Junction to Case 2.200 0.600 1.270 5.200 Fig. 3–6: Recommended pad size SOIC8 package 22 Mar. 6, 2012; DSH000152_003EN Micronas HAL880 DATA SHEET 3.6.1. Definition of Sensitivity Error ES ES is the maximum of the absolute value of 1 minus the quotient of the normalized measured value1) over the normalized ideal linear2) value: ES = max abs meas ------------ – 1 ideal Tmin, Tmax In the example below, the maximum error occurs at °C: 10 ES = 1.001 ------------- – 1 = 0.8% 0.993 1) normalized to achieve a least-square-fit straight-line that has a value of 1 at 25 °C 2) normalized to achieve a value of 1 at 25 °C ideal 200 ppm/k 1.03 relative sensitivity related to 25 °C value least-square-fit straight-line of normalized measured data measurement example of real sensor, normalized to achieve a value of 1 of its least-square-fit straight-line at 25 °C 1.02 1.01 1.001 1.00 0.993 0.99 0.98 –50 –25 -10 0 25 50 75 100 temperature [°C] 125 150 175 Fig. 3–7: ES definition example Micronas Mar. 6, 2012; DSH000152_003EN 23 HAL880 DATA SHEET 3.7. Open-Circuit Detection at TJ = 40 °C to +140 °C. Typical Characteristics for TJ = 25 °C, after locking the sensor Symbol Parameter Pin No. Min. Typ. Max. Unit Comment VOUT Output Voltage at Open VDD Line 3 or 4 0 0 0.15 V VDD = 5 V RL = 10 kto 200 k VOUT Output Voltage at Open GND Line 3 or 4 4.85 4.9 5.0 V VDD = 5 V RL = 10 kto 200 k RL: can be pull-up or pull-down resistor 3.8. Power-On Operation at TJ = 40 °C to +140 °C, after programming and locking. Typical Characteristics for TJ = 25 °C. Symbol Parameter Min. Typ. Max. Unit PORUP Power-On Reset Voltage (UP) 3.4 V PORDOWN Power-On Reset Voltage (DOWN) 3.0 V 3.9. Overvoltage and Undervoltage Detection at TJ = 40 °C to +140 °C. Typical Characteristics for TJ = 25 °C, after programming and locking Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions VDD,UV Undervoltage Detection Level 1 4.2 4.3 V 1) VDD,OV Overvoltage Detection Level 1 8.5 8.9 10.0 V 1) 1) If the supply voltage drops below VDD,UV or rises above VDD,OV, the output voltage is switched to VDD (97% of VDD at RL = 10 k to GND). The CLAMP-LOW register has to be set to a voltage 200 mV. Note: The over- and undervoltage detection is activated only after locking the sensor! 3.10. Magnetic Characteristics at TJ = 40 °C to +140 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking, at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VDD = 5 V. Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions BOffset Magnetic Offset 3 or 4 0.5 0 0.5 mT B = 0 mT, IOUT = 0 mA, TJ = 25 °C, unadjusted sensor BOffset/T Magnetic Offset Change due to TJ 3 or 4 15 0 15 T/K B = 0 mT, IOUT = 0 mA 24 Mar. 6, 2012; DSH000152_003EN Micronas HAL880 DATA SHEET 4. Application Notes 4.2. Use of two HAL880 in Parallel 4.1. Application Circuit Two different HAL880 sensors which are operated in parallel to the same supply and ground line can be programmed individually. In order to select the IC which should be programmed, both Hall ICs are inactivated by the “Deactivate” command on the common supply line. Then, the appropriate IC is activated by an “Activate” pulse on its output. Only the activated sensor will react to all following read, write, and program commands. If the second IC has to be programmed, the “Deactivate” command is sent again and the second IC can be selected. For EMC protection, it is recommended to connect one ceramic 100 nF capacitor each between ground and the supply voltage, respectively the output voltage pin. In addition, the input of the controller unit should be pulled-down with a 10 k resistor and a ceramic 100 nF capacitor. Please note that during programming, the sensor will be supplied repeatedly with the programming voltage of 12.5 V for 100 ms. All components connected to the VDD line at this time must be able to resist this voltage. Note: The multi-programming of two sensors works only if the outputs of the two sensors are pulled to GND with a 10 k pull-down resistor. VDD VDD OUT C HAL880 100 nF OUT A & Select A 100 nF GND 100 nF 10 k 100 nF HAL880 Sensor A HAL880 Sensor B OUT B & Select B Fig. 4–1: Recommended application circuit 100 nF 100 nF GND Fig. 4–2: Parallel operation of two HAL880 Micronas Mar. 6, 2012; DSH000152_003EN 25 HAL880 DATA SHEET 4.3. Temperature Compensation The relationship between the temperature coefficient of the magnet and the corresponding TC, TCSQ, and TC-Range codes for linear compensation is given in the following table. In addition to the linear change of the magnetic field with temperature, the curvature can be adjusted as well. For this purpose, other TC, TCSQ, and TC-Range combinations are required which are not shown in the table. Please contact Micronas for more detailed information on this higher order temperature compensation. TCSQ TC-Range TC TCSQ 1400 2 8 3 1500 2 4 7 1600 2 4 1 1700 2 0 6 1800 0 31 6 1900 0 28 7 2000 0 28 2 2100 0 24 6 Temperature Coefficient of Magnet (ppm/K) TC-Range 1075 3 31 7 2200 0 24 1 1000 3 28 1 2400 0 20 0 900 3 24 0 2500 0 16 5 750 3 16 2 2600 0 14 5 675 3 12 2 2800 0 12 1 575 3 8 2 2900 0 8 6 450 3 4 2 3000 0 8 3 400 1 31 0 3100 0 4 7 250 1 24 1 3300 0 4 1 150 1 20 1 3500 0 0 4 50 1 16 2 0 1 15 1 100 1 12 0 200 1 8 1 300 1 4 4 400 1 0 7 500 1 0 0 600 2 31 2 700 2 28 1 800 2 24 3 900 2 20 6 1000 2 16 7 1100 2 16 2 1200 2 12 5 1300 2 12 0 26 TC Temperature Coefficient of Magnet (ppm/K) Note: The above table shows only some approximate values. Micronas recommends to use the TC-Calc software to find optimal settings for temperature coefficients. Please contact Micronas for more detailed information. Mar. 6, 2012; DSH000152_003EN Micronas HAL880 DATA SHEET 4.4. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). T J = T A + T At static conditions and continuous operation, the following equation applies: T = I DD V DD R thJ For typical values use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For VDD = 5.5 V, Rth = 235 K/W, and IDD = 10 mA, the temperature difference T = 12.93 K. For all sensors, the junction temperature TJ is specified. The maximum ambient temperature TAmax can be calculated as: T Amax = T Lmax – T 4.5. EMC and ESD The HAL880 is designed for a stabilized 5 V supply. Interferences and disturbances conducted along the 12 V on-board system (product standard ISO 7637 part 1) are not relevant for these applications. For applications with disturbances by capacitive or inductive coupling on the supply line, or by radiated disturbances, the application circuit shown in Fig. 4–1 on page 25 is recommended. Applications with this arrangement should pass the EMC tests according to the product standards ISO 7637 part 3 (electrical transient transmission by capacitive or inductive coupling). Please contact Micronas for the detailed investigation reports with the EMC and ESD results. Micronas Mar. 6, 2012; DSH000152_003EN 27 HAL880 DATA SHEET – Read a register (see Fig. 5–3 on page 30) After evaluating this command, the sensor answers with the Acknowledge Bit, 14 Data Bits, and the Data Parity Bit on the output. 5. Programming of the Sensor 5.1. Definition of Programming Pulses The sensor is addressed by modulating a serial telegram on the supply voltage. The sensor answers with a serial telegram on the output pin. The bits in the serial telegram have a different bit time for the VDD-line and the output. The bit time for the VDD-line is defined through the length of the Sync Bit at the beginning of each telegram. The bit time for the output is defined through the Acknowledge Bit. A logical “0” is coded as no voltage change within the bit time. A logical “1” is coded as a voltage change between 50% and 80% of the bit time. After each bit, a voltage change occurs. – Programming the EEPROM cells (see Fig. 5–4 on page 30) After evaluating this command, the sensor answers with the Acknowledge Bit. After the delay time tw, the supply voltage rises up to the programming voltage. – Activate a sensor (see Fig. 5–5 on page 30) If more than one sensor is connected to the supply line, selection can be done by first deactivating all sensors. The output of all sensors will be pulled to ground by the internal 10 k resistors. With an Activate pulse on the appropriate output pin, an individual sensor can be selected. All following commands will only be accepted from the activated sensor. 5.2. Definition of the Telegram tr Each telegram starts with the Sync Bit (logical 0), 3 bits for the Command (COM), the Command Parity Bit (CP), 4 bits for the Address (ADR), and the Address Parity Bit (AP). tf VDDH tp0 logical 0 tp0 or VDDL There are 4 kinds of telegrams: – Write a register (see Fig. 5–2 on page 30) After the AP Bit follow 14 Data Bits (DAT) and the Data Parity Bit (DP). If the telegram is valid and the command has been processed, the sensor answers with an Acknowledge Bit (logical 0) on the output. tp1 VDDH tp0 logical 1 VDDL or tp0 tp1 Fig. 5–1: Definition of logical 0 and 1 bit 28 Mar. 6, 2012; DSH000152_003EN Micronas HAL880 DATA SHEET Table 5–1: Telegram parameters Symbol Parameter Pin Min. Typ. Max. Unit VDDL Supply Voltage for Low Level during Programming 1 5 5.6 6 V VDDH Supply Voltage for High Level during Programming 1 6.8 8.0 8.5 V tr Rise Time 1 0.05 ms tf Fall Time 1 0.05 ms tp0 Bit Time on VDD 1 1.7 1.8 1.9 ms tp0 is defined through the Sync Bit tpOUT Bit Time on Output Pin 3 or 4 2 3 4 ms tpOUT is defined through the Acknowledge Bit tp1 Voltage Change for Logical 1 1, 3 or 4 50 65 80 % % of tp0 or tpOUT VDDPROG Supply Voltage for Programming the EEPROM 1 12.4 12.5 12.6 V tPROG Programming Time for EEPROM 1 95 100 105 ms trp Rise Time of Programming Voltage 1 0.2 0.5 1 ms tfp Fall Time of Programming Voltage 1 0 1 ms tw Delay Time of Programming Voltage after Acknowledge 1 0.5 0.7 1 ms Vact Voltage for an Activate Pulse 3 or 4 3 4 5 V tact Duration of an Activate Pulse 3 or 4 0.05 0.1 0.2 ms Vout,deact Output Voltage after Deactivate Command 3 or 4 0 0.1 0.2 V Micronas Mar. 6, 2012; DSH000152_003EN Remarks 29 HAL880 DATA SHEET WRITE Sync COM CP ADR AP DAT DP VDD Acknowledge VOUT Fig. 5–2: Telegram for coding a Write command READ Sync COM CP ADR AP VDD Acknowledge DAT DP VOUT Fig. 5–3: Telegram for coding a Read command ERASE and PROM trp tPROG tfp VDDPROG Sync COM CP ADR AP VDD Acknowledge VOUT tw Fig. 5–4: Telegram for coding the EEPROM programming tr tACT tf VOUT VACT Fig. 5–5: Activate pulse 30 Mar. 6, 2012; DSH000152_003EN Micronas HAL880 DATA SHEET 5.3. Telegram Codes Data Bits (DAT) Sync Bit The 14 Data Bits contain the register information. Each telegram starts with the Sync Bit. This logical “0” pulse defines the exact timing for tp0. The registers use different number formats for the Data Bits. These formats are explained in Section 5.4. on page 32 Command Bits (COM) In the Write command, the last bits are valid. If, for example, the TC register (10 bits) is written, only the last 10 bits are valid. The Command code contains 3 bits and is a binary number. Table 5–2 shows the available commands and the corresponding codes for HAL880. In the Read command, the first bits are valid. If, for example, the TC register (10 bits) is read, only the first 10 bits are valid. Command Parity Bit (CP) This parity bit is “1”, if the number of zeros within the 3 Command Bits is uneven. The parity bit is “0”, if the number of zeros is even. Data Parity Bit (DP) This parity bit is “1”, if the number of zeros within the binary number is even. The parity bit is “0”, if the number of zeros is uneven. Address Bits (ADR) The Address code contains 4 bits and is a binary number. Table 5–3 on page 33 shows the available addresses for the HAL880 registers. Acknowledge After each telegram, the output answers with the Acknowledge signal. This logical “0” pulse defines the exact timing for tpOUT. Address Parity Bit (AP) This parity bit is “1”, if the number of zeros within the 4 Address bits is uneven. The parity bit is “0”, if the number of zeros is even. Table 5–2: Available commands Command Code Explanation READ 2 read a register WRITE 3 write a register PROM 4 program all nonvolatile registers (except the lock bits) ERASE 5 erase all nonvolatile registers (except the lock bits) Micronas Mar. 6, 2012; DSH000152_003EN 31 HAL880 DATA SHEET VOQ 5.4. Number Formats – The register range is from 1024 up to 1023. Binary number: – The register value is calculated by: The most significant bit is given as first, the least significant bit as last digit. V OQ VOQ = ----------- 1024 V DD Example: 101001 represents 41 decimal. Signed binary number: SENSITIVITY The first digit represents the sign of the following binary number (1 for negative, 0 for positive sign). Example: – The register range is from 8192 up to 8191. – The register value is calculated by: 0101001 represents +41 decimal 1101001 represents 41 decimal SENSITIVITY = Sensitivity 2048 Two’s complementary number: The first digit of positive numbers is “0”, the rest of the number is a binary number. Negative numbers start with “1”. In order to calculate the absolute value of the number, calculate the complement of the remaining digits and add “1”. Example: 0101001 represents +41 decimal 1010111 represents 41 decimal TC – The TC register range is from 0 up to 1023. – The register value is calculated by: TC = GROUP 256 + TCValue 8 + TCSQValue MODE 5.5. Register Information – The register range is from 0 up to 255 and contains the settings for FILTER and RANGE: CLAMP-LOW – The register range is from 0 up to 255. MODE = OUTPUTMODE 32 + BITRATE 16 + FILTER 8 + RANGE 2 + EnableProgGPRegisters – The register value is calculated by: LowClampingVoltage 2 CLAMP-LOW = -------------------------------------------------------------- 255 V DD D/A-READOUT – This register is read only. – The register range is from 0 up to 16383. CLAMP-HIGH – The register range is from 0 up to 511. DEACTIVATE – The register value is calculated by: – This register can only be written. HighClampingVoltage CLAMP-HIGH = ------------------------------------------------------ 511 V DD 32 – The register has to be written with 2063 decimal (80F hexadecimal) for the deactivation. – The sensor can be reset with an Activate pulse on the output pin or by switching off and on the supply voltage. Mar. 6, 2012; DSH000152_003EN Micronas HAL880 DATA SHEET Table 5–3: Available register addresses Register Code Data Bits Format Customer Remark CLAMP-LOW 1 8 binary read/write/program Low-clamping voltage CLAMP-HIGH 2 9 binary read/write/program High-clamping voltage VOQ 3 11 two’s compl. binary read/write/program Output quiescent voltage SENSITIVITY 4 14 signed binary read/write/program MODE 5 8 binary read/write/program Range, filter, output mode, interface bit time settings LOCKR 6 2 binary read/write/program Lock Bit GP REGISTERS 1...3 8 13 binary read/write/program 1) D/A-READOUT 9 14 binary read Bit sequence is reversed during read sequence. TC 11 10 binary read/write/program bit 0 to 2 TCSQ bit 3 to 7 TC bit 7 to 9 TC-RANGE GP REGISTER 0 12 13 binary read/write/program 1) DEACTIVATE 15 12 binary write Deactivate the sensor 1) To read/write this register it is mandatory to read/write all GP register one after the other starting with GP0. In case of writing the registers it necessary to first write all registers followed by one store sequence at the end. Even if only GP0 should be changed all other GP registers must first be read and the read out data must be written again to these registers. Micronas Mar. 6, 2012; DSH000152_003EN 33 HAL880 DATA SHEET Table 5–4: Data formats Char DAT3 DAT2 DAT1 DAT0 Register Bit 15 14 13 12 11 10 09 08 07 06 05 04 03 02 01 00 CLAMP LOW Write Read V V V V V V V V V V V V V V V V CLAMP HIGH Write Read V V V V V V V V V V V V V V V V V V VOQ Write Read V V V V V V V V V V V V V V V V V V V V V V SENSITIVITY Write Read V V V V V V V V V V V V V V V V V V V V V V V V V V V V MODE Write Read V V V V V V V V V V V V V V V V LOCKR Write Read V V V V GP 1..3 Registers Write Read V V V V V V V V V V V V V V V V V V V V V V V V V V D/AREADOUT Read V V V V V V V V V V V V V V TC Write Read V V V V V V V V V V V V V V V V V V V V GP 0 Register Write Read V V V V V V V V V V V V V V V V V V V V V V V V V V DEACTIVATE Write 1 0 0 0 0 0 0 0 1 1 1 1 V: valid, : ignore, bit order: MSB first 34 Mar. 6, 2012; DSH000152_003EN Micronas HAL880 DATA SHEET 5.6. Programming Information If the content of any register (except the lock registers) is to be changed, the desired value must first be written into the corresponding RAM register. Before reading out the RAM register again, the register value must be permanently stored in the EEPROM. Permanently storing a value in the EEPROM is done by first sending an ERASE command followed by sending a PROM command. The address within the ERASE and PROM commands must be zero. ERASE and PROM act on all registers in parallel. Note: To store data in the GP register, it is necessary to set bit number 0 of the MODE register to “1”, before sending an ERASE and PROM command. Otherwise the data stored in the GP register will not be changed. All four registers must be written before applying the store sequence. If all HAL880 registers are to be changed, all writing commands can be sent one after the other, followed by sending one ERASE and PROM command at the end. During all communication sequences, the customer has to check if the communication with the sensor was successful. This means that the acknowledge and the parity bits sent by the sensor have to be checked by the customer. If the Micronas programmer board is used, the customer has to check the error flags sent from the programmer board. Note: For production and qualification tests, it is mandatory to set the LOCK bit after final adjustment and programming of HAL880. The LOCK function is active after the next power-up of the sensor. The success of the lock process should be checked by reading at least one sensor register after locking and/or by an analog check of the sensors output signal. Electrostatic discharges (ESD) may disturb the programming pulses. Please take precautions against ESD. Micronas Mar. 6, 2012; DSH000152_003EN 35 HAL880 DATA SHEET 6. Data Sheet History 1. Advance Information: “HAL880 Programmable Linear Hall-Effect Sensor”, Oct. 14, 2008, AI000145_001EN. First release of the advance information. 2. Data Sheet: “HAL880 Programmable Linear HallEffect Sensor”, Feb. 23, 2009, DSH000152_001EN. First release of the data sheet. Minor changes: – small numbering changes (order of chapters). 3. Data Sheet: “HAL880 Programmable Linear HallEffect Sensor”, Sept. 22, 2011, DSH000152_002EN. Second release of the data sheet. Major changes: – SOIC8 SMD package added. 4. Data Sheet: “HAL880 Programmable Linear HallEffect Sensor”,Mar. 6, 2012, DSH000152_003EN. Third release of the data sheet. Major changes: – Section 3. Specifiations – Section 5.5. Register Information Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: [email protected] Internet: www.micronas.com 36 Mar. 6, 2012; DSH000152_003EN Micronas