zSs.mi-Condu.ckoi \P\oducti, Line. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUZ54A Power MOS transistor QUICK REFERENCE DATA SYMBOL PARAMETER GENERAL DESCRIPTION N-channel enhancement mode field-effect power ttansistoi In a metal envelope. This device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and DC/AC converters, and in general purpose switching applications. VDS ID ptot RDS(ON) Dialn-source voltage Drain current (d.c.) Total power dissipation Drain-source on-state resistance MAX UNIT 1000 4,5 125 2,6 V. A W n MECHANICAL DATA Dimensions in mm Net man: 12 g Pinning: 1 = Gate 2 - Drain 3 = Source 25,4- *8,3*i 4,2 38,84 30,1 19,5 *10,9-~ fig, I D—* 1,55 1,6— -*-11,o-J TO3; drain connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Accessories supplied on request: refer to Mounting instructions for TO3 envelopes. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors RATINGS Limiting values In accordance with the Absolute Maximum System (IEC 134) CONDITIONS MIN. SYMBOL PARAMETER Drain-source voltage VDS RGS • 20 kn VDGR Drain-gate voltage Gate-source voltage ±VGS Drain current (d.c.) T mb = 25-0 ID Drain current (d.c.) Tn.b-100-C ID — Drain current (pulse peak value) T mb = 25 "C IDM Total power dissipation Tmb = 25 'C Plot Storage temperature -55 Tstg Junction temperature Tj MAX. 10001000 20 4,5 2,8 18 125 150 150 UNIT V V V A A A W "C °C MIN. TYP. MAX. UNIT V V MA mA nA ft THERMAL RESISTANCES From junction to mounting base From junction to ambient Rthj-mb = 1,0 K/W = 35 K/W R thJ-a STATIC CHARACTERISTICS Tmb ~ 25 °C unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-source breakdown voltage. VGS(TO) Gate threshold voltage Zero gate voltage drain current IDSS Zero gate voltage drain current IDSS Gate source leakage current IGSS RDS(ON) Drain-source on-state resistance 1000 2,1 3,0 YDS= VGS: ID= imA 20 VDS =1000 V;VGS = o V;TJ = 25 °c 0,1 VDs = 1000 V;VGS = 0 V;Tj = 125 °C VGS = ±20V;VDS = OV 10 VGS - 10 V; ID = 2,6 A 2.3 VGS-OV; ID "0,25mA 4,0 2SO 1,0 100 2,6 DYNAMIC CHARACTERISTICS Tmb * 25 °C unless otherwise specified SYMBOL PARAMETER Forward transconductance gfs Input capacitance Qss Output capacitance GOJS Feedback capacitance Cm Turn-on delay time *d on Turn-on rise time tr Turn-off delay time tdoff Turn-off fall time tf Internal drain Inductance Ld LS Internal source inductance CONDITIONS MIN. VDS = 25V; ID = 2,6 A 1,4 VGS = 0 V; YDS " 25 V;f = 1 MHz V D D=30V;I D = 2.4A; VGS • 10 V; RGS • so n; Rgen = 50 n Measured from contact screw on header closei to source pin and centre of die Measured from source lead 6 mm from package to source bond pad - TYP. MAX, 3,5 3900 180 60 60 90 330 110 5000 300 90 90 140 430 140 - 5,0 - 12,5 UNIT S pF PF pF ns ns ns ns nH - nH REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb • 25 °C unless otherwise specified SYMBOL PARAMETER Continuous reverse drain current JDR Pulsed reverse drain current IDRM Diode forward on-voltage VSD Reverse recovery time Reverse recovery charge trr Qrr p 140 W 120 s PD t 100 80 CONDITIONS Tufc-WC T mb - 25 "C lF = 9A;Vos = OV; Tj = 25°C IF = 4,5 A;Tj = 25°C -dIF/dt = 100 A/MS; Tj = 25°C; VCS = 0 V; VR = 100 V TYP. MIN. 1,5 MAX 4,5 18 1,4 UNIT A A V 2000 30 - ns »iC - - ss s ss \ 60 \ 40 20 \ 50 100 "C 150 0 —-r c Fig. 2 Fig.3 Power dissipation Pj) = f(Tmb), Topical output characteristics ID - f(Vos) Parameter: Vcs- &0 *" P"lse tes'! 10 A 1 I / \ ID S 1 10" 10° 5 10' 5 102 5 103 °) V j S V 10 -VK Fig. 4 —— VDS Safe operating area lo(DC) and Parameter: tp: D = 0,01; Tmb = 25°C. Fig.5 1ypical transfer characteristic ID =f(^GS) (.Conditions: SO impulse test; VD$= 25 V, t"mb-2S°C.