i ^P^oducU, TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUZ84 BUZ84A Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high voltage, high speed power switching applications sjch as switching regulators, converters, motor controls, solenoid and relay drivers. TMOS POWER MOSFETs 5.3 and 6 AMPERES ros(on) = 1-5 and 2 OHMS 800 VOLTS a Silicon Gate for Fast Switching Speeds • Rugged — SOA is Power Dissipation Limited • Source-to-Drain Diode Characterized for Use With Inductive Loads • Low Drive Requirement — VQS(th) = 4 V max MAXIMUM RATINGS Symbol Rating Drain-Source Voltage Drain Current Continuous Pulsed Operating and Storage Temperature Range Vdc 800 Vdc ±20 Vdc Adc 6 3.8 24 5.3 3.3 21 'DM Total Power Dissipation (d TC - 25°C Derate above 25°C Unit VDGR VGS ID h TC = 25°C TC = 100°C BUZ84A 800 Drain-Gate Voltage (RQS = 20 kf!) Gate-Source Voltage BUZ84 LVDSS PD 125 1 Watts Tj, Tstg -55to 150 °C RftJC RfUA 1 35 °c/w TL 300 °c W/°C THERMAL CHARACTERISTICS Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes. 1/8" from case for 5 seconds ELECTRICAL CHARACTERISTICS |TC = 25°C unless otherwise notedl Characteristic Min Typ Max 800 - - - - 0.25 IGSSF — — 100 nAdc !GSSR — — 100 nAdc vGS(th) 2.1 — 4 Vdc Symbol OFF CHARACTERISTICS 3rain-Source Breakdown Voltage VBR(DSS) Vdc 1VGS = 0, ID = 1 mA) -'"'o Gate Voltage Drain Current IDSS 'OSS - 800 V, VQS = 0) mAdc 'j '- 125°C 1 sie-Body Leakage Current, Forward ':[GSrL= 20 V) ••Me -Body Leakage Current, Reverse *|GSR_J^2fl V] CHARACTERISTICS - ' ' ° T|i'eshold Voltage D__1_0 mA, VDS , VGS) urv*s signer's Data She«t for a complete set of detign curves for this devic*. of iKe MTMSN85 are applicable for thi* device. Icontinuedl NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors <Se.rn.i- Conductor ^Products., <Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201) 376-2922 (212)227-6005 FAX: (201) 376-8960 BUZ84, BUZ84A ELECTRICAL CHARACTERISTICS — continued (Tc = 25°C unless otherwise noted) Symbol Characteristic Win TVP Unit ON CHARACTERISTICS — continued Static Drain Source Oil Resistance!1' (VGS = 1" Vdc, ID = 3 Add BUZ84 BUZ84A — rDS(on) 2 Ohms 1.5 Forward Transconductance'1' (Vrjs = 25 Vdc. ID * 3 A) 9FS 1.8 - - mhos PF CAPACITANCE Input Capacitance (VDS = 25 V, vGS = o Output Capacitance f = 1 MHz) Reverse Transfer Capacitance Qss — 2000 5000 Coss — 200 350 *-rss - 80 140 SWITCHING CHARACTERISTICS 'd(on) - 50 90 ID = 2.5 Adc BUZB4 tr — 100 140 z0 = so n, VG$ = 10 vi td(off) - 320 430 See Figs. 1 and 2 tf - 100 140 Turn-On Delay Time Rise Time Turn-Off Delay Time (VDS = 30 v> Fall Time ns SOURCE-DRAIN DIODE CHARACTERISTICS VSD Diode Forward Voltage (VQS = 0) (Is = 10-6 A BUZ84) dS = 12 A BUZ84A) 1.4S 1.5 Vdc Continuous Source Current, Body Diode BUZ84 BUZ84A is — — 5.3 6 Adc Pulsed Source Current. Body Diode BUZ84 BUZ84A ISM — — 21 24 A Limited by stray inductance Forward Turn-On Time (IS = 5.3 A, ton Reverse Recovery Time vGS = o) <rr - 1200 Internal Drain inductance (Measured from the contact screw on the header closer to the source pin and the center of the die.) Ld — 5 Internal Source Inductance (Measured from the source pin 0.25" from the package to the source bond pad.) LS - ns INTERNAL PACKAGE INDUCTANCE 12.5 (II Pulse Test - Pulse Width * 300 /a. Duty Cycle * 2%. RESISTIVE SWITCHING OUTPUT, Vout INVERTED INPUT, Vin Figure 1. Switching Twt Circuit Quality Semi-Conductors Hgun 2. Switching Waveform* nH