<StmL-Conductor £A\oauc£i, Unc. TELEPHONE: (201) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (201) 376-8960 MPS-U55 (SILICON) MPS-U56 PNP SILICON AMPLIFIER TRANSISTORS PNP SILICON ANNULAR AMPLIFIER TRANSISTORS . . . designed for general-purpose, high-voltage ampl fier and driver applications. • • • High Collector-Emitter Breakdown Voltage BVCEO = 60 Vdc <Min) @ lc = 1 .0 mAdc - MPS-U55 80 Vdc (Mini @ Ic = 1,0 mAdc - MPS-U56 High Power Dissipation - Prj = 1 0 W @ TC = 25°C Complements to NPN MPS-U05 and MPS-U06 MAXIMUM RATINGS Symbol MPS-U55 MPS-U56 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @ TA - 25°C Derate above 25°C Rating VCEO VCB 60 80 60 SO Vdc Vdc VEB ic PD 4.0 Vdc 2.0 Adc 1.0 8.0 Watt mW/°C Total Device Dissipation 9 TC • 25°C Derate above. 25°C PD 10 80 Watts mW/°C Tj.Tstg -55 to 1 150 °C Operating and Storage Junction Temperature Range 0360 ~ 0.375 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case "JC 12.5 Thermal Resistance, Junction to Ambient «JA 125 °c/w °c/w Characteristic 1 — - 0.190 T rail Collector Connected Quality S<=imi-Conrh.)rtor$ <Se.mi-C.onauck.oi iJ-ioducti, One, TELEPHONE: (201) 376-2922 (212)227-6005 FAX; (201) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MPS-U55, MPS-U56 (continued) ELECTRICAL CHARACTERISTICS <TA - 25°C unless otherwise noted) Characteristic Symbol Unit Typ OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (lc- I.OmAdc, IB -01 Vdc BVcEO MPS-U55 MPS-U56 Emitter-Base Breakdown Voltage (IE- 100»iAde, lc-0) 60 80 - — - 4.0 - - - — - - 100 100 80 50 - 160 130 80 - - 0.22 0.1S 0.5 - vBE(on) - 0.78 1.2 Vdc «T SO 100 - MHz Cob " 10 15 pF 8VEBO Collector Cutoff Current (V CB -40Vdc, le -0) (V C B -60Vdc, IE -01 Vdc nAdc ICBO MPS-U5S MPS-U56 ON CHARACTERISTICS DC Current Gain ( 1 ) dc " 50 mAdc, VCE • '-0 Vdc) Uc • 250 mAdc, VCE • 1-0 Vdc) ( 1 C • 500 mAdc, VCE " 1 -0 Vdc) - "FE Collector-Emitter Saturation Voltage! 1) (1C * 250 mAdc, IB - 10 mAdc) dC " 250 mAdc, IB - 25 mAdc) Vdc VcE(sat) Base-Emitter On Voltage 11) (1C • 250 mAdc, VCE " 5.0 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain— Bandwidth Product dC - 200 mAdc. VCE " 5.0 Vdc, f - 100 MHz) Output Capacitance <VCB • 10 vdc- IE • ". * • 100 kHz) (l)Pulu Test: Pulu Width £300 I". Duty Cycle FIGURE 1 - DC CURRENT GAIN -•v c FIGURE 2 - "ON" VOLTAGES 11 j • li' e" • "S N " \ 10 10 2.0 50 1C. COLLECTOR CURRENT (mA) 20 10 20 SO 100 200 50 5QO LC, COLLECTOR CURRENT (mA) FIGURE 4 - CURRENT-GAIN-BANDWIDTH PRODUCT FIGURE 3 - DC SAFE OPERATING AREA ss B 1.0 fc : I OS ^r Tj - 01 n- - cond Bfiikdown imnttf 80ndirwjWwt Limn id ThKirnl Limitmon 9 Tc • 25'C AHifilmbli To BVCE0 001 • 10 20 1 SO 10 20 q s- ^5" SO \ *? V MP MPSU5 V i* 100 \s HH-T-H J X I s 1M"C 02 "•• \ S 1(00 s vr f S O V d c S . > 7 JM5°C t 5 0 ID 1 <) S0 00 2 » so Vet, COLLECTOR EMITTER VOLTAGE (VOLTS) There ere two limitation! on the power handling ability of a transinor: junction temperature and secondary breakdown. Safe operating area curves indicate Ic - VCE limits of the tramittor that must be observed for reliable operation: i.e.. the transistor must not be subjected to greater dissipation than the curves indicate. Ouaiitv S The data of Figure 3 is bawd on Tj(p|(| - 150°C. TC is variable depending on conditions. At high caw temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations impend by secondary breakdown 100 20