2SC2462 Silicon NPN Epitaxial REJ03G0697-0200 (Previous ADE-208-1063) Rev.2.00 Aug.10.2005 Application Low frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 6 Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 50 40 5 100 –100 150 150 –55 to +150 Unit V V V mA mA mW °C °C 2SC2462 Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Note: 1. The 2SC2462 is grouped by hFE as follows. Grade B C D Mark LB LC LD hFE 100 to 200 160 to 320 250 to 500 Rev.2.00 Aug 10, 2005 page 2 of 6 Min 50 40 5 — — 100 — — Typ — — — — — — — — Max — — — 0.5 0.5 500 0.2 0.75 Unit V V V µA µA V V Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 30 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA 2SC2462 Main Characteristics Typical Output Characteristics 100 50 50 100 = 20 0m W 50 8 40 6 30 4 20 10 µA 2 0 150 5 10 15 20 25 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics DC Current Transfer Ratio vs. Collector Current 300 DC Current Transfer Ratio hFE 5 VCE = 12 V 4 3 2 1 0 0.2 0.4 0.6 0.8 VCE = 12 V 100 Base to Emitter Voltage VBE (V) f = 270 Hz VCE = 12 V 200 100 0.3 1.0 3 10 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 6 0.3 1.0 3 10 30 Base to Emitter Voltage vs. Ambient Temperature 300 0.1 0.1 Collector Current IC (mA) Small Signal Current Transfer Ratio vs. Collector Current 0 0.03 75°C 25 0 0.03 1.0 Ta = 200 Base to Emitter Voltage VBE (V) Small Signal Current Transfer Ratio hfe C 60 IB = 0 0 Collector Current IC (mA) P 10 150 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 30 0.9 VCE = 12 V IC = 2 mA 0.8 0.7 0.6 0.5 0.4 –20 0 20 40 60 Ambient Temperature Ta (°C) 80 2SC2462 Emitter Input Capacitance vs. Emitter to Base Voltage 5 IE = 0 f = 1 MHz 4 3 2 1 0 4 8 12 16 5 Emitter Input Capacitance Cib (pF) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage IC = 0 f = 1 MHz 4 3 2 1 0 20 6 8 Contours of Constant Noise Figure Contours of Constant Noise Figure 10 10 14 12 5 10 2 NF = 1dB 8 2 1.0 6 3 0.5 4 0.2 VCE = 6 V f = 120 Hz 6 8 0.1 0.05 0.1 0.2 0.5 1.0 2 NF 1.0 =0 1 0.5 2 0.2 3 4 0.2 0.5 1.0 2.0 Noise Figure vs. Frequency 10 2 1 .5 d B 0.5 2 0.2 3 NF = 0.5 dB Collector Current IC (mA) Noise Figure NF (dB) VCE = 6 V f = 10 kHz 2 0.1 8 0.05 0.1 2.0 4 5 4 1.0 Contours of Constant Noise Figure 10 10 8 5 V =6V CE f = 1 kHz 1.0 Collector Current IC (mA) Signal Source Resistance Rg (kΩ) 4 Emitter to Base Voltage VEB (V) Signal Source Resistance Rg (kΩ) Signal Source Resistance Rg (kΩ) Collector to Base Voltage VCB (V) 2 8 IC = 0.1 mA Rg = 500 Ω VCE = 6 V 6 4 2 4 0.1 0.05 0.1 0.2 0.5 1.0 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 4 of 6 2.0 0 30 100 300 1k 3k Frequency f (Hz) 10k 30k 2SC2462 Noise Figure vs. Collector to Emitter Voltage Percentage of Relative to IC = 0.1mA Noise Figure NF (dB) 8 IC = 0.1 mA Rg = 500 Ω f = 120 Hz 6 4 2 0 2 1 5 10 20 30 Collector to Emitter Voltage VCE (V) Percentage of Relative to VCE = 5V h Parameter vs. Collector to Emitter Voltage 1.8 IC = 0.1 mA f = 270 Hz 1.6 hre 1.4 hoe 1.2 hoe 1.0 hfe hfe hie hre hie 0.8 0.5 1.0 2 5 10 20 Collector to Emitter Voltage VCE (V) Rev.2.00 Aug 10, 2005 page 5 of 6 h Parameter vs. Collector Current 100 50 20 VCE = 6 V 10 f = 270 Hz 5 hie 2 h 1.0 hfe re 0.5 hoe 0.2 0.1 0.05 hoe hre 0.02 0.01 0.010.02 0.05 0.1 0.2 0.5 1.0 2 hfe hie 5 10 Collector Current IC (mA) 2SC2462 Package Dimensions JEITA Package Code RENESAS Code SC-59A Package Name MPAK(T) / MPAK(T)V, MPAK / MPAKV PLSP0003ZB-A D MASS[Typ.] 0.011g A Q e E HE L A c LP L1 Reference Symbol A3 A x M S b A e A2 A e1 A1 S b b1 c1 I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q Dimension in Millimeters Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Part Name 2SC2462LBTL-E 2SC2462LCTL-E 2SC2462LDTL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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