PHOTODIODE Ø9mm AXUV63HS1 FEATURES • • • • Circular active area Ideal for electron detection 100% internal QE High speed Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R TEST CONDITIONS MIN TYP MAX 63 9mm UNITS mm2 A/W (see graphs on next page) 160 Reverse Breakdown Voltage, VR IR = 1μA Capacitance, C VR = 0V 10 pF RL = 50Ω, VR = 2V 2 nsec VR = 150V 100 nA Rise Time Dark Current Volts THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient1 -10° TO 40°C1 Nitrogen or Vacuum -20°C TO 80°C Maximum Junction Temperature 70°C Lead soldering temperature2 260°C 1 Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised. 2 0.080" from case for 10 seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover. 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision July 21, 2014 PHOTODIODE 63 mm2 RESPONSIVITY (A/W) 0.30 AXUV63HS1 ELECTRON RESPONSE 0.25 0.20 0.15 0.10 0.05 0.00 100 1000 10,000 100,000 ENERGY (ev) RESPONSIVITY (A/W) 0.30 EUV-UV PHOTON RESPONSE 0.25 0.20 0.15 0.10 0.05 0.00 0 RESPONSIVITY (A/W) 0.5 50 100 150 WAVELENGTH (nm) 200 250 UV-VIS-NIR PHOTON RESPONSIVITY 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013