NJG1143UA2 GPS LOW NOISE AMPLIFIER GaAs MMIC

NJG1143UA2
GPS LOW NOISE AMPLIFIER GaAs MMIC
I GENERAL DESCRIPTION
The NJG1143UA2 is a low noise amplifier GaAs MMIC designed for GNSS
(Global navigation Satellite Systems).
The NJG1143 is featured very small size, low noise figure, high gain and low
current consumption. The NJG1143UA2 operates from 1.5V to 3.6V single
voltage, has stand-by mode to save the supply current, and requires only
three external components. The NJG1143UA2 has a on-chip ESD protection.
The NJG1143UA2 is available in a very small, lead-free, halogen-free, 1.0mm
x 1.0mm x 0.37 mm, 6-pin EPFFP6-A2 package.
I PACKAGE OUTLINE
NJG1143UA2
I APPLICATION
GNSS applications like GPS, Galileo, GLONASS and COMPASS
I FEATURES
G Low Supply voltage
G Low control voltage
G Low current consumption
+2.85V typ. (+1.5V~+3.6V)
+1.8V typ.
(+1.5V~+3.6V)
4.0mA typ.
@VDD=2.85V, VCTL=1.8V
7µA typ.
@VDD=2.85V, VCTL=0V, Stand-by mode
G High gain
20.0dB typ.
@VDD=2.85V, VCTL=1.8V, f=1575MHz
G Low noise figure
0.70dB typ.
@VDD=2.85V, VCTL=1.8V, f=1575MHz
G Input power at 1dB gain compression point -16.5dBm typ. @VDD=2.85V, VCTL=1.8V, f=1575MHz
G High input IP3
-2.0dBm typ. @VDD=2.85V, VCTL=1.8V, f=1575+1575.1MHz
G Stand-by function
G Small package size
EPFFP-A2
(Package size: 1.0mmx1.0mmx0.37mm typ.)
G Integrated ESD protection circuit
G Lead-free and halogen-free
I PIN CONFIGURATION
(Top View)
GND
5
6
4
RFIN
VDD
Bias
Circuit
GND
Logic
Circuit
Pin Connection
1. GND
2. VCTL
3. RFOUT
4. VDD
5. GND
6. RFIN
RFOUT
1
3
VCTL
2
I TRUTH TABLE
“H”=VCTL(H), “L”=VCTL(L)
VCTL
H
L
LNA Mode
Active mode
Stand-by mode
Note: Specifications and description listed in this datasheet are subject to change without notice.
Ver.2013-04-15
-1-
NJG1143UA2
I ABSOLUTE MAXIMUM RATINGS
Ta=+25°C, Zs=Zl=50Ω
PARAMETERS
SYMBOL
CONDITIONS
RATINGS
UNITS
Supply voltage
VDD
5.0
V
Control voltage
VCTL
5.0
V
Input power
PIN
VDD=2.85V
+15
dBm
Power dissipation
PD
4-layer FR4 PCB with through-hole
(101.5mmx114.5mm), Tj=150°C
590
mW
Operating temperature
Topr
-40~+85
°C
Storage temperature
Tstg
-55~+150
°C
I ELECTRICAL CHARACTERISTICS 1 (DC)
(General conditions: Ta=+25°C, Zs=Zl=50Ω)
PARAMETER
Supply Voltage
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
VDD
VDD Terminal
1.5
-
3.6
V
Control Voltage (High)
VCTL(H)
VCTL Terminal
1.5
1.8
3.6
V
Control Voltage (Low)
VCTL(L)
VCTL Terminal
0
0
0.3
V
-
4.0
6.5
mA
-
3.0
4.7
mA
-
7.0
15.0
µA
-
4.0
10.0
µA
-
5.0
12.0
µA
Supply Current 1
IDD1
Supply Current 2
IDD2
Supply Current 3
IDD3
Supply Current 4
IDD4
Control Current
ICTL
-2-
Active mode
VDD Terminal
VDD=2.85V, VCTL=1.8V
Active mode
VDD Terminal
VDD=1.8V, VCTL=1.8V
Stand-by mode
VDD Terminal
VDD=2.85V, VCTL=0V
Stand-by mode
VDD Terminal
VDD=1.8V, VCTL=0V
VCTL=1.8V,
VCTL Terminal
NJG1143UA2
I ELECTRICAL CHARACTERISTICS 2 (RF, VDD=2.85V)
(General conditions: VDD=2.85V, VCTL=1.8V, Freq=1.575GHz,Ta=+25°C, Zs=Zl=50Ω, with application circuit)
PARAMETER
Small Signal Gain 1
Noise Figure 1
Input Power at 1dB Gain
Compression Point 1
Input 3rd Order
Intercept Point 1
SYMBOL
CONDITIONS
Gain1
NF1
Exclude PCB and
connector Losses
(0.08dB)
P-1dB(IN)
_1
IIP3_1
RF Input Port VSWR 1
VSWRi1
RF Output Port VSWR 1
VSWRo1
2 tone, 100k spacing
Pin=-34dBm
MIN
TYP
MAX
UNIT
17.5
20.0
22.0
dB
-
0.70
0.95
dB
-19.0
-16.5
-
dBm
-6.0
-2.0
-
dBm
-
1.5
2.0
1.5
2.0
I ELECTRICAL CHARACTERISTICS 3 (RF, VDD=1.8V)
(General conditions: VDD=1.8V, VCTL=1.8V, Freq=1.575GHz,Ta=+25°C, Zs=Zl=50Ω, with application circuit)
PARAMETER
Small Signal Gain 2
Noise Figure 2
Input Power at 1dB Gain
Compression Point 2
Input 3rd Order
Intercept Point 2
SYMBOL
CONDITIONS
Gain2
NF2
Exclude PCB and
connector Losses
(0.08dB)
P-1dB(IN)
_2
IIP3_2
RF Input Port VSWR 2
VSWRi2
RF Output Port VSWR 2
VSWRo2
2 tone, 100k spacing
Pin=-34dBm
MIN
TYP
MAX
UNIT
16.5
19.0
21.0
dB
-
0.75
1.10
dB
-22.0
-19.5
-
dBm
-10.0
-6.0
-
dBm
-
1.5
2.3
1.3
1.7
-3-
NJG1143UA2
I TERMINAL INFORMATION
-4-
No.
SYMBOL
DESCRIPTION
1
GND
Ground terminal. These terminals should be connected to the ground plane as
close as possible for excellent RF performance.
2
VCTL
Control voltage terminal. Inputting a logic-high, the LNA turn at LNA active
mode. Inputting a logic-low, the LNA turn at stand-by mode.
3
RFOUT
RF output terminal. Requires an external capacitor C1. The capacitor C1 is
not only a matching component , but also a DC blocking capacitor.
4
VDD
Supply voltage terminal. Bypass to ground with capacitor C2 as close as
possible to the IC.
5
GND
Ground terminal. These terminals should be connected to the ground plane as
close as possible for excellent RF performance.
6
RFIN
RF input terminal. Requires a maching inductor L1. Integrated a DC blocking
capaciotr.
NJG1143UA2
I ELECTRICAL CHARACTERRISTICS
Conditions: VDD=2.85V, VCTL=1.8V, Ta=+25oC, Zs=Zl=50Ω, with application circuit
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22 (f=50MHz~20GHz)
S21, S12 (f=50MHz~20GHz)
-5-
NJG1143UA2
I ELECTRICAL CHARACTERRISTICS
Conditions: VDD=2.85V, VCTL=1.8V, Ta=+25oC, Zs=Zl=50Ω, with application circuit
IDD, ICTL vs. VCTL
NF, Gain vs. frequency
(VDD=2.85V, VCTL=1.8V)
21
6
20
5
2
19
4
1.5
18
3
30
25
1
NF
0.5
IDD
20
3
17
2
16
1
15
1.75
0
15
ICTL (uA)
IDD (mA)
Gain
Gain (dB)
Noise Figure (dB)
2.5
(VDD=2.85V, RF OFF)
10
ICTL
5
(NF: Exclude PCB, Connector Losses)
1.55
1.6
1.65
1.7
0
0
0.5
1
1.5
Pout vs. Pin
Gain, IDD vs. Pin
(VDD=2.85V, VCTL=1.8V, fRF=1575MHz)
(VDD=2.85V, VCTL=1.8V, fRF=1575MHz)
24
22
5
Pout
Gain (dB)
Pout (dBm)
0
-5
-10
-15
P-1dB(IN)=-16.0dBm
9
20
8
18
7
16
6
IDD
14
-30
-20
-10
0
2
8
-40
10
-30
-20
-10
0
10
Pin (dBm)
Pout, IM3 vs. Pin
OIP3, IIP3 vs. frequency
(VDD=2.85V, VCTL=1.8V, fRF=1575+1575.1MHz)
(VDD=2.85V, VCTL=1.8V, df=100kHz, Pin=-34dBm)
24
-40
-60
IM3
-80
IIP3=-1.3dBm
-30
-20
-10
Pin (dBm)
0
10
10
8
22
Pout
-20
-6-
3
P-1dB(IN)=-16.0dBm
20
-100
-40
5
4
10
OIP3 (dBm)
Pout, IM3 (dBm)
0
10
Gain
Pin (dBm)
20
3
12
-20
-25
-40
2.5
VCTL (V)
frequency (GHz)
10
2
IDD (mA)
1.5
OIP3
6
18
4
16
2
0
14
IIP3
12
-2
10
-4
8
1.45
1.5
1.55
1.6
1.65
frequency (GHz)
1.7
-6
1.75
IIP3 (dBm)
0
1.45
NJG1143UA2
I ELECTRICAL CHARACTERRISTICS
Conditions: VDD=2.85V, VCTL=1.8V, Ta=+25oC, Zs=Zl=50Ω, with application circuit
(VDD=2.85V, VCTL=1.8V/0V, RF OFF)
Gain (dB)
20
Gain
6
3
5
2.5
18
2
16
1.5
NF
14
1
12
0.5
IDD (mA) @active mode
22
3.5
30
25
IDD
(Active mode)
4
20
3
15
2
10
IDD
(Standby mode)
1
5
IDD (uA) @standby mode
IDD vs. Temperature
(VDD=2.85V, VCTL=1.8V, fRF=1575MHz)
Noise Figure (dB)
24
Gain, NF vs. Temperature
(NF: Exclude PCB, Connector Losses)
10
-50
0
0
-50
0
100
50
0
Temperature (oC)
Temperature (oC)
-8
0
100
50
P-1dB(IN) vs. Temperature
OIP3, IIP3 vs. Temperature
(VDD=2.85V, VCTL=1.8V, fRF=1575MHz)
(VDD=2.85V, VCTL=1.8V, fRF=1575+1575.1MHz, Pin=-34dBm)
15
30
-10
-14
-16
P-1dB(IN)
-18
10
OIP3
20
5
15
0
IIP3
-20
-5
10
-22
-24
-50
0
50
5
-50
100
0
Temperature (oC)
Temperature (oC)
k factor vs. frequency
VSWR vs. Temperature
3
(VDD=2.85V, VCTL=1.8V, fRF=1575MHz)
(VDD=2.85V, VCTL=1.8V)
20
VSWRi
2.5
VSWRo
15
2
k factor
VSWRi, VSWRo
-10
100
50
1.5
10
+85oC
1
5
+25oC
0.5
-40oC
0
-50
0
0
50
o
Temperature ( C)
100
0
5
10
15
20
frequency (GHz)
-7-
IIP3 (dBm)
OIP3 (dBm)
P-1dB(IN) (dBm)
25
-12
NJG1143UA2
I ELECTRICAL CHARACTERRISTICS
Conditions: VDD=1.8V, VCTL=1.8V, Ta=+25oC, Zs=Zl=50Ω, with application circuit
-8-
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22 (f=50MHz~20GHz)
S21, S12 (f=50MHz~20GHz)
NJG1143UA2
I ELECTRICAL CHARACTERRISTICS
Conditions: VDD=1.8V, VCTL=1.8V, Ta=+25oC, Zs=Zl=50Ω, with application circuit
(VDD=1.8V, VCTL=1.8V)
(VDD=1.8V, RF OFF)
6
20
5
25
2
19
4
20
1.5
18
2.5
Gain
NF
1
0.5
Gain (dB)
IDD (mA)
21
3
Noise Figure (dB)
IDD, ICTL vs. VCTL
30
IDD
15
3
17
2
16
1
15
1.75
0
ICTL (uA)
NF, Gain vs. frequency
10
ICTL
5
(NF: Exclude PCB, Connector Losses)
1.5
1.55
1.6
1.65
1.7
0
0
0.5
1
1.5
frequency (GHz)
Pout vs. Pin
Gain, IDD vs. Pin
(VDD=1.8V, VCTL=1.8V, fRF=1575MHz)
(VDD=1.8V, VCTL=1.8V, fRF=1575MHz)
24
8
Gain
7
Pout
Gain (dB)
Pout (dBm)
20
-15
-20
18
6
16
5
14
P-1dB(IN)=-20.0dBm
-30
-20
-10
0
10
8
-40
10
3
2
P-1dB(IN)=-20.0dBm
1
-30
-20
Pin (dBm)
-10
0
10
Pin (dBm)
Pout, IM3 vs. Pin
OIP3, IIP3 vs. frequency
(VDD=1.8V, VCTL=1.8V, fRF=1575+1575.1MHz)
(VDD=1.8V, VCTL=1.8V, df=100kHz, Pin=-34dBm)
20
18
16
-20
-40
-60
IM3
-80
-100
-40
6
4
Pout
OIP3 (dBm)
Pout, IM3 (dBm)
0
4
IDD
12
-25
20
9
22
-10
-30
-40
3
VCTL (V)
0
-5
2.5
IDD (mA)
5
2
IIP3=-5.6dBm
-30
-20
-10
Pin (dBm)
0
10
2
OIP3
14
0
12
-2
10
-4
IIP3
8
-6
6
-8
4
1.45
1.5
1.55
1.6
1.65
1.7
-10
1.75
frequency (GHz)
-9-
IIP3 (dBm)
0
1.45
NJG1143UA2
I ELECTRICAL CHARACTERRISTICS
Conditions: VDD=1.8V, VCTL=1.8V, Zs=Zl=50Ω, with application circuit
IDD vs. Temperature
3
Gain
20
2.5
18
2
16
1.5
NF
1
14
IDD (mA) @active mode
Gain (dB)
22
5
3.5
Noise Figure (dB)
24
(VDD=1.8V, VCTL=1.8V, fRF=1575MHz)
4
(VDD=1.8V, VCTL=1.8V/0V, RF OFF)
25
20
IDD
(Active mode)
15
3
10
2
IDD
(Standby mode)
5
1
0.5
12
IDD (uA) @standby mode
Gain, NF vs. Temperature
(NF: Exclude PCB, Connector Losses)
0
0
-50
0
100
50
0
Temperature (oC)
Temperature (oC)
OIP3, IIP3 vs. Temperature
P-1dB(IN) vs. Temperature
-12
(VDD=1.8V, V CTL=1.8V, fRF=1575+1575.1MHz, Pin=-34dBm)
4
18
(VDD=1.8V, VCTL=1.8V, fRF=1575MHz)
14
-16
OIP3 (dBm)
P-1dB(IN) (dBm)
2
16
-14
-18
-20
P-1dB(IN)
-22
OIP3
0
12
-2
10
-4
8
IIP3
-6
-24
6
-8
-26
4
-10
-28
-50
0
50
2
-50
100
0
k factor vs. frequency
VSWR vs. Temperature
3
-12
100
50
Temperature (oC)
Temperature (oC)
(VDD=1.8V, VCTL=1.8V, fRF=1575MHz)
(VDD=1.8V, V CTL=1.8V)
20
VSWRi
2.5
VSWRo
15
2
k factor
VSWRi, VSWRo
0
100
50
1.5
10
+85oC
1
5
+25oC
0.5
0
-50
-40oC
0
0
50
o
Temperature ( C)
- 10 -
100
0
5
10
frequency (GHz)
15
20
IIP3 (dBm)
10
-50
NJG1143UA2
I ELECTRICAL CHARACTERRISTICS
Conditions: RF OFF, Zs=Zl=50Ω, with application circuit
5
IDD vs. VCTL
IDD vs. VDD
(VDD=2.85V, RF OFF)
(VCTL=1.8V, RF OFF)
6
5
4
+85oC
IDD (mA)
IDD (mA)
4
3
o
+85 C
2
+25oC
3
+25oC
2
-40oC
-40oC
1
IDD
1
0
0
0
0.5
1
1.5
2
2.5
3
1
1.5
2
2.5
VCTL (V)
14
12
3.5
4
IDD vs. VDD
ICTL vs. Temperature
(VCTL=0V, RF OFF)
(VDD=2.85V or 1.8V, V CTL=1.8V, RF OFF)
14
4.5
12
+85oC
10
ICTL (uA)
10
IDD (uA)
3
VDD (V)
8
IDD
6
8
6
ICTL
o
4
4
+25 C
-40oC
2
2
0
1
1.5
2
2.5
3
VDD (V)
3.5
4
4.5
0
-50
0
50
100
o
Temperature ( C)
- 11 -
NJG1143UA2
I ELECTRICAL CHARACTERRISTICS
Condition: VCTL=1.8V, Ta=+25oC, Zs=Zl=50Ω, with application circuit
(VCTL=1.8V/0V, RF OFF)
20
3
6
2.5
5
Gain (dB)
Gain
19
2
18
1.5
NF
17
1
0.5
16
30
25
IDD
(Active mode)
4
20
3
15
2
10
IDD
(Standby mode)
1
5
IDD (uA) @standby mode
IDD vs. VDD
(VCTL=1.8V, fRF=1575MHz)
Noise Figure (dB)
IDD (mA) @active mode
21
Gain, NF vs. VDD
(NF: Exclude PCB, Connector Losses)
1
1.5
2
2.5
3
3.5
0
0
4.5
15
4
1
1.5
2
3
3.5
4
0
4.5
VDD (V)
VDD (V)
-5
2.5
P-1dB(IN) vs. VDD
OIP3, IIP3 vs. VDD
(VCTL=1.8V, fRF=1575MHz)
(VCTL=1.8V, fRF=1575+1575.1MHz, Pin=-34dBm)
22
8
20
6
18
4
-15
P-1dB(IN)
-20
16
2
OIP3
14
0
IIP3
12
-2
10
-4
8
-6
-25
-30
6
1
1.5
2
2.5
3
3.5
4
4.5
1
2.5
3
3.5
4
VDD (V)
VSWR vs. VDD
k factor vs. frequency
-8
4.5
(VCTL=1.8V)
20
VSWRi
2.5
VSWRo
15
2
k factor
VSWRi, VSWRo
2
VDD (V)
(VCTL=1.8V, fRF=1575MHz)
3
1.5
1.5
VDD=1.2V
10
1
VDD=2.85V, 4V
5
0.5
0
0
1
1.5
2
2.5
3
VDD (V)
- 12 -
3.5
4
4.5
0
5
10
frequency (GHz)
15
20
IIP3 (dBm)
OIP3 (dBm)
P-1dB(IN) (dBm)
-10
NJG1143UA2
I APPLICATION CIRCUIT
(Top View)
L1
GND
9.1nH
5
4
6
RF IN
RFIN
VDD
C2
1000pF
VDD
Bias
Circuit
Logic
Circuit
GND
RFOUT
3
1
C1
2pF
RF OUT
2
VCTL
VCTL
I TEST PCB LAYOUT
(Top View)
Parts list
Parts ID
L1
C1, C2
VDD
RF IN
L1
C2
Manufacture
LQP03T_02 Series
(MURATA)
GRM03 Series
(MURATA)
RF OUT
C1
VCTL
PCB
Substrate: FR-4
Thickness: 0.2mm
Microstrip line width: 0.4mm (Z0=50Ω)
Size: 14.0mm x 14.0mm
- 13 -
NJG1143UA2
I NOISE FIGURE MEASUREMENT CONDITONS
Measuring instruments
NF Analyzer
: Agilent 8973A, 8975A
Noise Source
: Agilent 346A
Setting the NF analyzer
Measurement mode form
Device under test
: Amplifier
System downconverter : off
Mode setup form
Sideband
: LSB
Averages
: 16
Average mode
: Point
Bandwidth
: 4MHz
Loss comp
: off
Tcold
: setting the temperature of noise source (303.15K)
NF Analyzer
(Agilent 8973A, 8975A)
Noise Source
(Agilent 346A)
* Noise source and NF analyzer
Input (50Ω)
Noise Source
Drive Output
are connected directly.
Calibration Setup
NF Analyzer
(Agilent 8973A, 8975A)
Noise Source
(Agilent 346A)
* Noise source and DUT,
IN
DUT
OUT
Measurement Setup
- 14 -
Input (50Ω)
Noise Source
Drive Output
DUT and NF analyzer
are connected directly.
NJG1143UA2
I PACKAGE OUTLINE (EPFFP6-A2)
Unit
Substrate
Terminal treat
Molding material
Weight (typ.)
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
: mm
: FR4
: Au
: Epoxy resin
: 0.855mg
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions.
The application circuits in this databook are
described only to show representative usages of
the product and not intended for the guarantee or
permission of any right including the industrial
rights.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these damages.
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