LR401 - Polyfet

polyfet rf devices
LR401
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
130.0 Watts Push - Pull
Package Style LR
"Polyfet"TM process
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
features
low feedback and output capacitances,
resulting in high Ft transistors with high
input impedance and high efficiency.
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
230 Watts
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
o
0.75 C/W
o
200 C
DC Drain
Current
Storage
Temperature
o
o
-65 C to 150 C
13.5 A
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
70 V
70 V
20 V
RF CHARACTERISTICS ( 130.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN
Gps
Common Source Power Gain
η
Drain Efficiency
VSWR
TYP
MAX
14
55
Load Mismatch Tolerance
10:1
UNITS TEST CONDITIONS
dB
Idq = 0.40 A, Vds =
28.0 V, F = 500 MHz
%
Idq = 0.40 A, Vds =
28.0 V, F = 500 MHz
Relative
Idq = 0.40 A, Vds = 28.0 V, F =
500 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN
TYP
MAX
UNITS TEST CONDITIONS
V
Bvdss
Drain Breakdown Voltage
Idss
Zero Bias Drain Current
1.0
mA
Vds = 28.0 V, Vgs = 0V
Igss
Gate Leakage Current
1
uA
Vds = 0V Vgs = 30V
Vgs
Gate Bias for Drain Current
5
V
gM
Forward Transconductance
Rdson
Saturation Resistance
Idsat
Saturation Current
Ciss
Common Source Input Capacitance
Crss
Common Source Feedback Capacitance
Coss
Common Source Output Capacitance
65
2
Ids = 25.00 mA, Vgs = 0V
Ids = 0.30 A, Vgs = Vds
2.7
Mho
Vds = 10V, Vgs = 5V
0.28
Ohm
Vgs = 20V, Ids = 8.00 A
17.00
Amp
Vgs = 20V, Vds = 10V
80.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
4.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
50.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
LR401
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
LR 40 1 Pin vs Pout F req=5 00Mhz;
V ds=28 Vdc, I dq=.8A
L4 1 DIE CAPACITANCE
1000
18
180
160
Coss
17
140
100
120
16
Pout
100
Ciss
15
80
Gain
60
40
10
14
Efficiency @130W = 60%
13
20
0
Crss
12
0
1
2
3
4
5
6
P in in W a tts
7
8
9
1
10
0
2.5
5
7.5
10
12.5
15
17.5
20
22.5
25
27.5
30
VDS IN VOLTS
IV CURVE
ID & GM VS VGS
L4B 1 DIE IV
L4B 1 DIE ID & GM Vs VG
100.00
Id in amps; Gm in mhos
18
16
ID IN AMPS
14
12
10
8
6
4
Id
10.00
1.00
gM
2
0.10
0
0
2
vg=2v
4
Vg=4v
6
8
10
12
14
VDS IN VOLTS vg=8v
Vg=6v
16
0
18
20
0
2
vg=12v
Zin Zout
4
6
8
10
12
Vgs in Volts
14
16
18
20
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
POLYFET RF DEVICES
.XXX +/-.005 inches
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com