MAXIM MAX19995

19-4253; Rev 0; 12/08
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
The MAX19995 dual-channel downconverter provides
up to 9dB of conversion gain, +24.8dBm input IP3,
+13.3dBm 1dB input compression point, and a noise
figure as low as 9dB for 1700MHz to 2200MHz diversity
receiver applications. With an optimized LO frequency
range of 1400MHz to 2000MHz, this mixer is ideal for
low-side LO injection architectures. High-side LO injection is supported by the MAX19995A, which is pin-pin
and functionally compatible with the MAX19995.
In addition to offering excellent linearity and noise performance, the MAX19995 also yields a high level of
component integration. This device includes two double-balanced passive mixer cores, two LO buffers, a
dual-input LO selectable switch, and a pair of differential IF output amplifiers. Integrated on-chip baluns allow
for single-ended RF and LO inputs.
The MAX19995 requires a nominal LO drive of 0dBm
and a typical supply current of 297mA at VCC = 5.0V or
212mA at VCC = 3.3V.
The MAX19995/MAX19995A are pin compatible with
the MAX19985/MAX19985A series of 700MHz to
1000MHz mixers and pin similar with the MAX19997A/
MAX19999 series of 1800MHz to 4000MHz mixers,
making this entire family of downconverters ideal for
applications where a common PCB layout is used
across multiple frequency bands.
The MAX19995 is available in a 6mm x 6mm, 36-pin
thin QFN package with an exposed pad. Electrical performance is guaranteed over the extended temperature
range, from TC = -40°C to +85°C.
Applications
UMTS/WCDMA/LTE Base Stations
cdma2000® Base Stations
DCS1800 and EDGE Base Stations
Features
o 1700MHz to 2200MHz RF Frequency Range
o 1400MHz to 2000MHz LO Frequency Range
o 1750MHz to 2700MHz LO Frequency Range
(MAX19995A)
o 50MHz to 500MHz IF Frequency Range
o 9dB Typical Conversion Gain
o 9dB Typical Noise Figure
o +24.8dBm Typical Input IP3
o +13.3dBm Typical Input 1dB Compression Point
o 79dBc Typical 2RF-2LO Spurious Rejection at
PRF = -10dBm
o Dual Channels Ideal for Diversity Receiver
Applications
o 49dB Typical Channel-to-Channel Isolation
o Low -3dBm to +3dBm LO Drive
o Integrated LO Buffer
o Internal RF and LO Baluns for Single-Ended
Inputs
o Built-In SPDT LO Switch with 56dB LO-to-LO
Isolation and 50ns Switching Time
o Pin Compatible with the MAX19985/MAX19985A/
MAX19995A Series of 700MHz to 2200MHz Mixers
o Pin Similar to the MAX19997A/MAX19999 Series
of 1800MHz to 4000MHz Mixers
o Single +5.0V or +3.3V Supply
o External Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/ReducedPerformance Mode
Ordering Information
PCS1900 and EDGE Base Stations
PHS/PAS Base Stations
Fixed Broadband Wireless Access
Wireless Local Loop
Private Mobile Radios
Military Systems
TEMP RANGE
PIN-PACKAGE
MAX19995ETX+
PART
-40°C to +85°C
36 Thin QFN-EP*
MAX19995ETX+T
-40°C to +85°C
36 Thin QFN-EP*
+Denotes a lead(Pb)-free/RoHS-compliant package.
*EP = Exposed pad.
T = Tape and reel.
Pin Configuration and Typical Application Circuit appear at
end of data sheet.
cdma2000 is a trademark of Telecommunications Industry
Association.
________________________________________________________________ Maxim Integrated Products
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
1
MAX19995
General Description
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
ABSOLUTE MAXIMUM RATINGS
VCC to GND ...........................................................-0.3V to +5.5V
LO1, LO2 to GND ...............................................................±0.3V
Any Other Pins to GND...............................-0.3V to (VCC + 0.3V)
RFMAIN, RFDIV, and LO_ Input Power ..........................+15dBm
RFMAIN, RFDIV Current (RF is DC shorted to GND
through a balun)...............................................................50mA
Continuous Power Dissipation (Note 1) ...............................8.7W
θJA (Notes 2, 3)..............................................................+38°C/W
θJC (Notes 1, 3)...............................................................7.4°C/W
Operating Case Temperature Range
(Note 4) .............................................................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1: Based on junction temperature TJ = TC + (θJC x VCC x ICC). This formula can be used when the temperature of the exposed
pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction
temperature must not exceed +150°C.
Note 2: Junction temperature TJ = TA + (θJA x VCC x ICC). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a fourlayer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Note 4: TC is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the DCS/PCS band, VCC = +4.75V to +5.25V, TC = -40°C to +85°C. R1 = R4 = 806Ω, R2 =
R5 = 2.32kΩ. Typical values are at VCC = +5.0V, TC = +25°C, unless otherwise noted. All parameters are production tested.)
PARAMETER
SYMBOL
Supply Voltage
VCC
Supply Current
ICC
LOSEL Input High Voltage
VIH
LOSEL Input Low Voltage
VIL
LOSEL Input Current
CONDITIONS
MIN
TYP
MAX
4.75
5
5.25
V
297
370
mA
Total supply current, VCC = +5.0V
2
IIH and IIL
UNITS
V
-10
0.8
V
+10
µA
+3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC = +3.0V to +3.6V, TC = -40°C to +85°C, R1 = R4 = 909Ω, R2 = R5 = 2.49kΩ. Typical values are at
VCC = +3.3V, TC = +25°C, unless otherwise noted. All parameters are guaranteed by design and not production tested.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
3.0
3.3
3.6
V
Supply Voltage
VCC
Supply Current
ICC
212
mA
LOSEL Input High Voltage
VIH
2
V
LOSEL Input Low Voltage
VIL
0.8
V
2
Total supply current, VCC = +3.3V
_______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
RF Frequency
fRF
(Note 5)
1700
2200
MHz
LO Frequency
fLO
(Note 5)
1400
2000
MHz
Using Mini-Circuits TC4-1W-17 4:1
transformer as defined in the typical
application circuit, IF matching components
affect the IF frequency range (Note 5)
100
500
MHz
50
250
MHz
-3
+3
dBm
IF Frequency
f IF
Using alternative Mini-Circuits TC4-1W-7A
4:1 transformer, IF matching components
affect the IF frequency range (Note 5)
LO Drive Level
PLO
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC = +4.75V to +5.25V, RF and
LO ports are driven from 50Ω sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 1700MHz to 2000MHz, fLO = 1510MHz to
1810MHz, fIF = 190MHz, fRF > fLO, TC = -40°C to +85°C. Typical values are at V CC = +5.0V, PRF = -5dBm, PLO = 0dBm,
fRF = 1800MHz, fLO = 1610MHz, fIF = 190MHz, TC = +25°C, unless otherwise noted.) (Note 6)
PARAMETER
SYMBOL
CONDITIONS
TC = +25°C
Conversion Gain
GC
Conversion Gain Flatness
Gain Variation Over Temperature
TCCG
IP1dB
TYP
MAX
7
9
11
7.8
9
10.2
UNITS
dB
Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), fLO = 1760MHz, fRF = 1950MHz
8.9
Flatness over any one of three frequency
bands:
fRF = 1710MHz to 1785MHz
fRF = 1850MHz to 1910MHz
fRF = 1920MHz to 1980MHz
±0.1
dB
-0.009
dB/°C
fRF = 1700MHz to 2000MHz,
fLO = 1510MHz to 1810MHz ,
fIF = 190MHz, TC = -40°C to +85°C
fRF = 1700MHz for min value
Input Compression Point
(Note 7)
MIN
Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), fLO = 1760MHz, fIF = 190MHz,
fRF = 1950MHz
9.5
12.5
13.3
dBm
_______________________________________________________________________________________
3
MAX19995
RECOMMENDED AC OPERATING CONDITIONS
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC = +4.75V to +5.25V, RF and
LO ports are driven from 50Ω sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 1700MHz to 2000MHz, fLO = 1510MHz to
1810MHz, fIF = 190MHz, fRF > fLO, TC = -40°C to +85°C. Typical values are at V CC = +5.0V, PRF = -5dBm, PLO = 0dBm,
fRF = 1800MHz, fLO = 1610MHz, fIF = 190MHz, TC = +25°C, unless otherwise noted.) (Note 6)
PARAMETER
Input Intercept Point
SYMBOL
IIP3
MIN
TYP
fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone,
fRF = 2000MHz for min value
CONDITIONS
20.5
23.7
fIF = 190MHz, fLO = 1810MHz, fRF =
2000MHz for min value, fRF1 - fRF2 = 1MHz,
PRF = -5dBm per tone, TC = +25°C to
+85°C
21.5
23.7
Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), fLO = 1760MHz, fIF = 190MHz,
fRF = 1950MHz, fRF1 - fRF2 = 1MHz,
PRF = -5dBm per tone
Input Intercept Variation Over
Temperature
Noise Figure
Noise Figure Temperature
Coefficient
Noise Figure with Blocker
4
TCIIP3
NFSSB
fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone,
TC = -40°C to +85°C
MAX
dBm
24.8
0.0035
dBm/°C
Single sideband, no blockers present
(Note 8)
9
11
fLO = 1610MHz, fIF = 190MHz,
fRF = 1800MHz, TC = +25°C, PLO = 0dBm,
single sideband, no blockers present
(Note 8)
9
9.6
Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω , R2 = R5 =
1.5kΩ), fIF = 190MHz, fLO = 1760MHz,
fRF = 1950MHz, single sideband, no
blockers present
9.3
TCNF
Single sideband, no blockers present,
TC = -40°C to +85°C
NFB
fBLOCKER = 1900MHz, PBLOCKER =
+8dBm, fRF = 1800MHz, fLO = 1610MHz,
PLO = 0dBm, VCC = +5.0V, TC = +25°C
(Notes 8, 9)
UNITS
dB
0.016
19
_______________________________________________________________________________________
dB/°C
20.5
dB
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
(Typical Application Circuit optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC = +4.75V to +5.25V, RF and
LO ports are driven from 50Ω sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 1700MHz to 2000MHz, fLO = 1510MHz to
1810MHz, fIF = 190MHz, fRF > fLO, TC = -40°C to +85°C. Typical values are at V CC = +5.0V, PRF = -5dBm, PLO = 0dBm,
fRF = 1800MHz, fLO = 1610MHz, fIF = 190MHz, TC = +25°C, unless otherwise noted.) (Note 6)
PARAMETER
2RF-2LO Spur Rejection
3RF-3LO Spur Rejection
SYMBOL
2x2
3x3
MIN
TYP
fRF = 1800MHz, fLO = 1610MHz,
PRF = -10dBm (Note 8)
CONDITIONS
54
79
fRF = 1800MHz, fLO = 1610MHz,
PRF = -5dBm (Note 8)
49
74
fRF = 1800MHz, fLO = 1610MHz,
PLO = 0dBm, PRF = -10dBm,
VCC = +5.0V, TC = +25°C (Note 8)
56
79
fRF = 1800MHz, fLO = 1610MHz,
PLO = 0dBm, PRF = -5dBm, VCC = +5.0V,
TC = +25°C (Note 8)
51
74
Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), fIF = 190MHz, fLO = 1760MHz,
fRF = 1950MHz, PRF = -10dBm
79
Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), fIF = 190MHz, fLO = 1760MHz,
fRF = 1950MHz, PRF = -5dBm
74
fRF = 1800MHz, fLO = 1610MHz,
PRF = -10dBm (Note 8)
77
91
fRF = 1800MHz, fLO = 1610MHz,
PRF = -5dBm (Note 8)
67
81
fRF = 1800MHz, fLO = 1610MHz,
PLO = 0dBm, PRF = -10dBm,
VCC = +5.0V, TC = +25oC (Note 8)
79
91
fRF = 1800MHz, fLO = 1600MHz,
PLO = 0dBm, PRF = -5dBm, VCC = +5.0V,
TC = +25°C (Note 8)
69
81
Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), fIF = 190MHz, fLO = 1760MHz,
fRF = 1950MHz, PRF = -10dBm
86
Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), fIF = 190MHz, fLO = 1760MHz,
fRF = 1950MHz, PRF = -5dBm
76
MAX
UNITS
dBc
dBc
_______________________________________________________________________________________
5
MAX19995
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC = +4.75V to +5.25V, RF and
LO ports are driven from 50Ω sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 1700MHz to 2000MHz, fLO = 1510MHz to
1810MHz, fIF = 190MHz, fRF > fLO, TC = -40°C to +85°C. Typical values are at V CC = +5.0V, PRF = -5dBm, PLO = 0dBm,
fRF = 1800MHz, fLO = 1610MHz, fIF = 190MHz, TC = +25°C, unless otherwise noted.) (Note 6)
PARAMETER
SYMBOL
RF Input Return Loss
CONDITIONS
MIN
TYP
LO and IF terminated into matched
impedance, LO on
21
LO port selected, RF and IF terminated into
matched impedance
20
MAX
UNITS
dB
dB
LO Input Return Loss
LO port unselected, RF and IF terminated
into matched impedance
19
Nominal differential impedance of the IC’s
IF outputs
200
Ω
IF Return Loss
RF terminated into 50Ω, LO driven by 50Ω
source, IF transformed to 50Ω using
external components shown in Typical
Application Circuit
12.5
dB
RF-to-IF Isolation
fRF = 1700MHz for min value
39
dB
IF Output Impedance
ZIF
30
LO Leakage at RF Port
(Notes 8, 10)
-31
-24.7
dBm
2LO Leakage at RF Port
(Note 8)
-20
-16
dBm
LO Leakage at IF Port
(Note 8)
-40
-27
dBm
RFMAIN converted power measured at
IFD_, relative to IFM_, all unused ports
terminated to 50Ω
40
49
dB
Channel Isolation
RFDIV converted power measured at IFM_,
relative to IFD_, all unused ports terminated
to 50Ω
40
49
LO-to-LO Isolation
PLO1 = +3dBm, PLO2 = +3dBm,
fLO1 = 1610MHz, fLO2 = 1611MHz
40
56
dB
LO Switching Time
50% of LOSEL to IF settled within 2
degrees
50
ns
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit. Typical values are at VCC = +3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 1800MHz, fLO = 1610MHz,
fIF = 190MHz, TC = +25°C, unless otherwise noted.) (Note 6)
PARAMETER
Conversion Gain
SYMBOL
GC
Flatness over any one of three frequency
bands:
fRF = 1710MHz to 1785MHz
fRF = 1850MHz to 1910MHz
fRF = 1920MHz to 1980MHz
Conversion Gain Flatness
Gain Variation Over Temperature
6
CONDITIONS
TCCG
TC = -40°C to +85°C
MIN
TYP
MAX
UNITS
8.4
dB
±0.1
dB
-0.009
dB/°C
_______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
(Typical Application Circuit. Typical values are at VCC = +3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 1800MHz, fLO = 1610MHz,
fIF = 190MHz, TC = +25°C, unless otherwise noted.) (Note 6)
PARAMETER
Input Compression Point
Input Intercept Point
SYMBOL
IP1dB
IIP3
CONDITIONS
MIN
TYP
MAX
UNITS
(Note 7)
8.9
dBm
fRF1 - fRF2 = 1MHz
18.5
dBm
0.0034
dBm/°C
Input Intercept Variation Over
Temperature
TCIIP3
fRF1 - fRF2 = 1MHz, TC = -40°C to +85°C
Noise Figure
NFSSB
Single sideband, no blockers present
9.0
dB
Noise Figure Temperature
Coefficient
TCNF
Single sideband, no blockers present,
TC = -40°C to +85°C
0.016
dB/°C
2RF-2LO Spur Rejection
2x2
3RF-3LO Spur Rejection
3x3
PRF = -10dBm
73
PRF = -5dBm
68
dBc
PRF = -10dBm
70
PRF = -5dBm
60
LO on and IF terminated
21
LO port selected, RF and IF terminated into
matched impedance
16
LO port unselected, RF and IF terminated
into matched impedance
20
RF terminated into 50Ω, LO driven by 50Ω
source, IF transformed to 50Ω using
external components shown in Typical
Application Circuit, fIF = 190MHz
12.5
dB
RF-to-IF Isolation
42
dB
LO Leakage at RF Port
-40
dBm
2LO Leakage at RF Port
-29
dBm
LO Leakage at IF Port
-43
dBm
RF Input Return Loss
LO Input Return Loss
IF Return Loss
dBc
dB
dB
RFMAIN converted power measured at
IFD_, relative to IFM_, all unused ports
terminated to 50Ω
49
RFDIV converted power measured at IFM_,
relative to IFD_, all unused ports terminated
to 50Ω
49
LO-to-LO Isolation
PLO1 = +3dBm, PLO2 = +3dBm,
fLO1 = 1610MHz, fLO2 = 1611MHz
55
dB
LO Switching Time
50% of LOSEL to IF settled within 2 degrees
50
ns
Channel Isolation
dB
Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. See
the Typical Operating Characteristics.
Note 6: All limits reflect losses of external components, including a 0.65dB loss at fIF = 190MHz due to the 4:1 impedance transformer. Output measurements were taken at IF outputs of the Typical Application Circuit.
Note 7: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50Ω source.
Note 8: Guaranteed by design and characterization.
Note 9: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of
all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021: Specifications and
Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
Note 10: Limited production testing.
Note 5:
_______________________________________________________________________________________
7
MAX19995
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
Typical Operating Characteristics
(Typical Application Circuit, optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25°C, unless otherwise noted.)
TC = +85°C
TC = +25°C
7
9
8
PLO = -3dBm, 0dBm, +3dBm
2300
1700
2500
INPUT IP3 vs. RF FREQUENCY
MAX19995 toc04
25
MAX19995 toc03
1700
2500
TC = -30°C
22
TC = +25°C
2100
25
PLO = -3dBm
PLO = 0dBm
PRF = -5dBm/TONE
24
23
VCC = 5.25V
22
21
21
PLO = +3dBm
20
2300
2500
20
1700
PLO = -3dBm, 0dBm, +3dBm
2100
2300
RF FREQUENCY (MHz)
2500
2500
11
10
9
8
VCC = 4.75V, 5.0V, 5.25V
7
6
6
1900
2300
12
MAX19995 toc08
9
7
TC = -30°C
2100
NOISE FIGURE vs. RF FREQUENCY
10
8
1900
RF FREQUENCY (MHz)
NOISE FIGURE (dB)
TC = +25°C
6
8
11
NOISE FIGURE (dB)
9
1700
1700
2500
NOISE FIGURE vs. RF FREQUENCY
10
8
2300
12
MAX19995 toc07
TC = +85°C
11
2100
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
12
1900
MAX19995 toc09
2100
RF FREQUENCY (MHz)
7
VCC = 5.0V
20
1900
2500
VCC = 4.75V
TC = +85°C
1700
2300
INPUT IP3 vs. RF FREQUENCY
23
22
1900
RF FREQUENCY (MHz)
PRF = -5dBm/TONE
24
INPUT IP3 (dBm)
INPUT IP3 (dBm)
23
21
2300
INPUT IP3 vs. RF FREQUENCY
PRF = -5dBm/TONE
24
2100
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
25
1900
INPUT IP3 (dBm)
2100
MAX19995 toc05
1900
VCC = 4.75V, 5.0V, 5.25V
6
6
1700
8
7
7
6
9
MAX19995 toc06
8
10
CONVERSION GAIN (dB)
9
11
MAX19995 toc02
10
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
11
MAX19995 toc01
TC = -30°C
10
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
11
NOISE FIGURE (dB)
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
1700
1900
2100
2300
RF FREQUENCY (MHz)
2500
1700
1900
2100
2300
RF FREQUENCY (MHz)
_______________________________________________________________________________________
2500
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
2RF-2LO RESPONSE vs. RF FREQUENCY
60
70
60
TC = +25°C
50
50
2100
2300
50
1700
2500
3RF-3LO RESPONSE vs. RF FREQUENCY
2300
2500
1700
1900
TC = +85°C
75
65
PRF = -5dBm
85
75
PLO = -3dBm, 0dBm, +3dBm
65
55
2300
2500
PRF = -5dBm
85
VCC = 5.25V
75
VCC = 4.75V
65
55
1700
RF FREQUENCY (MHz)
12
TC = +25°C
2100
2300
RF FREQUENCY (MHz)
2500
2100
2300
2500
INPUT P1dB vs. RF FREQUENCY
13
12
PLO = -3dBm, 0dBm, +3dBm
15
14
VCC = 5.25V
VCC = 5.0V
13
12
VCC = 4.75V
11
10
10
1900
1900
RF FREQUENCY (MHz)
11
TC = -30°C
1700
1700
MAX19995 toc17
14
INPUT P1dB (dBm)
INPUT P1dB (dBm)
2500
INPUT P1dB vs. RF FREQUENCY
13
11
2300
15
MAX19995 toc16
TC = +85°C
14
2100
RF FREQUENCY (MHz)
INPUT P1dB vs. RF FREQUENCY
15
1900
INPUT P1dB (dBm)
2100
2500
VCC = 5.0V
55
1900
2300
3RF-3LO RESPONSE vs. RF FREQUENCY
95
TC = -30°C
1700
2100
RF FREQUENCY (MHz)
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19995 toc13
TC = +25°C
2100
95
3RF-3LO RESPONSE (dBc)
3RF-3LO RESPONSE (dBc)
PRF = -5dBm
85
1900
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
95
60
MAX19995 toc18
1900
70
VCC = 4.75V, 5.0V, 5.25V
3RF-3LO RESPONSE (dBc)
1700
80
PLO = 0dBm
MAX19995 toc14
TC = -30°C
PLO = +3dBm
PLO = -3dBm
MAX19995 toc12
80
PRF = -5dBm
MAX19995 toc15
70
PRF = -5dBm
2RF-2LO RESPONSE vs. RF FREQUENCY
90
2RF-2LO RESPONSE (dBc)
80
2RF-2LO RESPONSE (dBc)
2RF-2LO RESPONSE (dBc)
TC = +85°C
MAX19995 toc10
PRF = -5dBm
90
MAX19995 toc11
2RF-2LO RESPONSE vs. RF FREQUENCY
90
10
1700
1900
2100
2300
RF FREQUENCY (MHz)
2500
1700
1900
2100
2300
2500
RF FREQUENCY (MHz)
_______________________________________________________________________________________
9
MAX19995
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25°C, unless otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25°C, unless otherwise noted.)
TC = -30°C, +25°C, +85°C
35
45
PLO = -3dBm, 0dBm, +3dBm
35
30
1900
2100
2300
1900
2100
2300
2500
1700
1900
2100
2300
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
PLO = -3dBm, 0dBm, +3dBm
-30
-35
-40
2100
2300
1500
LO FREQUENCY (MHz)
1900
2100
40
35
30
2300
RF FREQUENCY (MHz)
2500
1700
1900
2100
2300
LO FREQUENCY (MHz)
45
40
35
RF-TO-IF ISOLATION vs. RF FREQUENCY
50
VCC = 4.75V, 5.0V, 5.25V
45
40
35
30
30
2100
VCC = 4.75V
1500
2300
RF-TO-IF ISOLATION (dB)
PLO = -3dBm, 0dBm, +3dBm
RF-TO-IF ISOLATION (dB)
45
1900
-40
RF-TO-IF ISOLATION vs. RF FREQUENCY
50
MAX19995 toc25
TC = -30°C, +25°C, +85°C
-35
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
50
1700
MAX19995 toc26
1900
VCC = 5.0V
-30
-50
-50
1700
VCC = 5.25V
-45
-45
-50
-25
MAX19995 toc24
MAX19995 toc23
-25
2500
-20
LO LEAKAGE AT IF PORT (dBm)
-40
LO LEAKAGE AT IF PORT (dBm)
MAX19995 toc22
-35
-20
-45
10
MAX19995 toc21
30
1700
RF FREQUENCY (MHz)
-30
1700
VCC = 4.75V, 5.0V, 5.25V
40
RF FREQUENCY (MHz)
TC = -30°C, +25°C, +85°C
1500
45
RF FREQUENCY (MHz)
-20
-25
2500
50
35
30
1700
LO LEAKAGE AT IF PORT (dBm)
50
40
55
CHANNEL ISOLATION (dB)
45
40
55
CHANNEL ISOLATION (dB)
50
CHANNEL ISOLATION vs. RF FREQUENCY
60
MAX19995 toc20
MAX19995 toc19
55
CHANNEL ISOLATION (dB)
CHANNEL ISOLATION vs. RF FREQUENCY
60
MAX19995 toc27
CHANNEL ISOLATION vs. RF FREQUENCY
60
RF-TO-IF ISOLATION (dB)
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
1700
1900
2100
2300
RF FREQUENCY (MHz)
2500
1700
1900
2100
2300
RF FREQUENCY (MHz)
______________________________________________________________________________________
2500
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-40
TC = -30°C, +25°C, +85°C
-50
-60
1600
1800
2000
2200
-40
-50
PLO = -3dBm, 0dBm, +3dBm
-60
MAX19995 toc30
-50
VCC = 4.75V, 5.0V, 5.25V
-60
1600
1800
2000
2200
2400
1400
1600
1800
2000
2200
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-30
TC = +25°C
-40
TC = +85°C
-50
-30
-40
PLO = -3dBm, 0dBm, +3dBm
-50
-60
-60
1600
1800
2000
2200
-20
-30
-40
VCC = 4.75V, 5.0V, 5.25V
-50
-60
1400
2400
1600
1800
2000
2200
2400
1400
1600
1800
2000
2200
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO SWITCH ISOLATION
vs. LO FREQUENCY
LO SWITCH ISOLATION
vs. LO FREQUENCY
LO SWITCH ISOLATION
vs. LO FREQUENCY
TC = +25°C
50
TC = +85°C
60
50
PLO = -3dBm, 0dBm, +3dBm
1550
1700
1850
2000
LO FREQUENCY (MHz)
2150
2300
MAX19995 toc36
2400
60
50
VCC = 4.75V, 5.0V, 5.25V
40
40
70
LO SWITCH ISOLATION (dB)
60
MAX19995 toc35
TC = -30°C
70
LO SWITCH ISOLATION (dB)
MAX19995 toc34
70
2400
MAX19995 toc33
-20
-10
2LO LEAKAGE AT RF PORT (dBm)
-20
-10
MAX19995 toc32
MAX19995 toc31
TC = -30°C
1400
-40
LO FREQUENCY (MHz)
-10
1400
-30
-70
1400
2400
2LO LEAKAGE AT RF PORT (dBm)
1400
2LO LEAKAGE AT RF PORT (dBm)
-30
-20
-70
-70
LO SWITCH ISOLATION (dB)
MAX19995 toc29
-30
-20
LO LEAKAGE AT RF PORT (dBm)
MAX19995 toc28
LO LEAKAGE AT RF PORT (dBm)
-20
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT (dBm)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
40
1400
1550
1700
1850
2000
LO FREQUENCY (MHz)
2150
2300
1400
1550
1700
1850
2000
2150
2300
LO FREQUENCY (MHz)
______________________________________________________________________________________
11
MAX19995
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25°C, unless otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25°C, unless otherwise noted.)
RF PORT RETURN LOSS
vs. RF FREQUENCY
IF PORT RETURN LOSS
vs. IF FREQUENCY
PLO = -3dBm, 0dBm, +3dBm
15
20
5
VCC = 4.75V, 5.0V, 5.25V
10
15
25
0
MAX19995 toc39
fLO = 1610MHz
LO SELECTED RETURN LOSS (dB)
10
LO SELECTED RETURN LOSS
vs. LO FREQUENCY
MAX19995 toc38
RF PORT RETURN LOSS (dB)
5
0
IF PORT RETURN LOSS (dB)
fIF = 190MHz
MAX19995 toc37
0
5
10
PLO = +3dBm
PLO = 0dBm
15
20
25
PLO = -3dBm
20
1700
1900
2100
2300
2500
50
140
230
410
500
1400
1800
2000
2200
2400
LO FREQUENCY (MHz)
LO UNSELECTED RETURN LOSS
vs. LO FREQUENCY
SUPPLY CURRENT
vs. TEMPERATURE (TC)
CONVERSION GAIN vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
20
25
300
VCC = 5.0V
280
PLO = -3dBm, 0dBm, +3dBm
10
CONVERSION GAIN (dB)
15
320
260
1800
2000
2200
2400
9
8
0Ω, 3.6nH, 6.8nH, 10nH
7
VCC = 4.75V
1600
MAX19995 toc42
VCC = 5.25V
SUPPLY CURRENT (mA)
10
11
MAX19995 toc41
340
MAX19995 toc40
5
6
-35
-15
5
25
45
65
85
1700
1900
2100
2300
2500
LO FREQUENCY (MHz)
TEMPERATURE (°C)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
2RF-2LO RESPONSE vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
3RF-3LO RESPONSE vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
3.6nH
23
0Ω
22
6.8nH
21
PRF = -5dBm
0Ω
95
80
70
60
PRF = -5dBm
0Ω
3.6nH
3RF-3LO RESPONSE (dBc)
24
90
MAX19995 toc44
PRF = -5dBm/TONE
2RF-2LO RESPONSE (dBc)
25
MAX19995 toc43
1400
1600
IF FREQUENCY (MHz)
30
85
75
6.8nH
10nH
65
10nH
6.8nH, 10nH
3.6nH
50
20
1700
1900
2100
2300
RF FREQUENCY (MHz)
12
320
RF FREQUENCY (MHz)
0
LO UN SELECTED RETURN LOSS (dB)
30
MAX19995 toc45
30
INPUT IP3 (dBm)
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
2500
55
1700
1900
2100
2300
RF FREQUENCY (MHz)
2500
1700
1900
2100
2300
RF FREQUENCY (MHz)
______________________________________________________________________________________
2500
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
CHANNEL ISOLATION (dB)
50
45
0Ω
3.6nH
40
-30
-40
6.8nH
3.6nH
-50
60
10nH
MAX19995 toc48
0Ω
RF-TO-IF ISOLATION (dB)
6.8nH
55
-20
RF-TO-IF ISOLATION vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
MAX19995 toc47
10nH
LO LEAKAGE AT IF PORT (dBm)
60
MAX19995 toc46
CHANNEL ISOLATION vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
50
6.8nH
40
30
35
10nH
3.6nH
-60
30
1700
1900
2100
2300
RF FREQUENCY (MHz)
2500
0Ω
20
1500
1700
1900
2100
LO FREQUENCY (MHz)
2300
1700
1900
2100
2300
2500
RF FREQUENCY (MHz)
______________________________________________________________________________________
13
MAX19995
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25°C, unless otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the UMTS band, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25°C, unless otherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
TC = +85°C
9
8
PLO = -3dBm, 0dBm, +3dBm
7
7
VCC = 4.75V, 5.0V, 5.25V
6
1700
2500
2500
1700
TC = +85°C
26
25
PLO = -3dBm, 0dBm, +3dBm
22
21
20
2100
2300
2500
1900
2100
2300
VCC = 5.0V
22
TC = +25°C
TC = -30°C
9
PLO = -3dBm, 0dBm, +3dBm
RF FREQUENCY (MHz)
2500
11
10
9
VCC = 4.75V, 5.0V, 5.25V
8
6
6
2300
2500
7
7
6
2300
NOISE FIGURE vs. RF FREQUENCY
10
8
2100
12
NOISE FIGURE (dB)
9
1900
RF FREQUENCY (MHz)
MAX19995 toc56
11
NOISE FIGURE (dB)
10
2100
1700
2500
NOISE FIGURE vs. RF FREQUENCY
12
MAX19995 toc55
TC = +85°C
1900
23
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
12
1700
24
20
1700
RF FREQUENCY (MHz)
8
PRF = -5dBm/TONE
VCC = 5.25V
21
20
11
2500
MAX19995 toc57
21
1900
2300
INPUT IP3 vs. RF FREQUENCY
24
23
2100
VCC = 4.75V
TC = -30°C
1700
1900
RF FREQUENCY (MHz)
PRF = -5dBm/TONE
25
INPUT IP3 (dBm)
23
TC = +25°C
26
MAX19995 toc52
24
22
2300
INPUT IP3 vs. RF FREQUENCY
PRF = -5dBm/TONE
25
2100
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
26
1900
MAX19995 toc54
2300
INPUT IP3 (dBm)
2100
MAX19995 toc53
1900
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
8
7
6
1700
14
9
TC = +25°C
6
7
10
CONVERSION GAIN (dB)
10
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
9
CONVERSION GAIN vs. RF FREQUENCY
11
MAX19995 toc50
MAX19995 toc49
TC = -30°C
10
8
11
MAX19995 toc51
CONVERSION GAIN vs. RF FREQUENCY
11
NOISE FIGURE (dB)
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
1700
1900
2100
2300
RF FREQUENCY (MHz)
2500
1700
1900
2100
2300
RF FREQUENCY (MHz)
______________________________________________________________________________________
2500
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
70
60
2300
1700
2500
1700
2500
75
TC = +85°C
75
PLO = -3dBm, 0dBm, +3dBm
2100
2300
INPUT P1dB vs. RF FREQUENCY
1900
2100
2300
65
2500
VCC = 5.25V
1700
1900
13
TC = +25°C
12
2100
2300
2500
RF FREQUENCY (MHz)
INPUT P1dB vs. RF FREQUENCY
16
MAX19995 toc65
15
INPUT P1dB (dBm)
14
MAX19995 toc60
75
INPUT P1dB vs. RF FREQUENCY
16
MAX19995 toc64
TC = +85°C
15
VCC = 5.0V
85
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
16
PRF = -5dBm
55
1700
2500
2500
VCC = 4.75V
VCC = 5.25V
15
INPUT P1dB (dBm)
1900
2300
3RF-3LO RESPONSE vs. RF FREQUENCY
85
65
2100
95
55
55
1700
1900
RF FREQUENCY (MHz)
PRF = -5dBm
TC = -30°C
INPUT P1dB (dBm)
2300
3RF-3LO RESPONSE (dBc)
85
95
3RF-3LO RESPONSE (dBc)
3RF-3LO RESPONSE (dBc)
MAX19995 toc61
PRF = -5dBm
65
50
2100
3RF-3LO RESPONSE vs. RF FREQUENCY
3RF-3LO RESPONSE vs. RF FREQUENCY
TC = +25°C
1900
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
95
60
VCC = 4.75V, 5.0V, 5.25V
PLO = -3dBm
MAX19995 toc62
2100
70
MAX19995 toc63
50
50
1900
80
PLO = 0dBm
TC = -30°C
TC = +25°C
1700
PLO = +3dBm
PRF = -5dBm
14
13
PLO = -3dBm, 0dBm, +3dBm
12
VCC = 5.0V
MAX19995 toc66
60
2RF-2LO RESPONSE (dBc)
70
PRF = -5dBm
80
90
MAX19995 toc59
MAX19995 toc58
TC = +85°C
80
90
2RF-2LO RESPONSE (dBc)
2RF-2LO RESPONSE (dBc)
PRF = -5dBm
2RF-2LO RESPONSE vs. RF FREQUENCY
2RF-2LO RESPONSE vs. RF FREQUENCY
2RF-2LO RESPONSE vs. RF FREQUENCY
90
14
13
12
VCC = 4.75V
TC = -30°C
11
11
10
11
10
1700
1900
2100
2300
RF FREQUENCY (MHz)
2500
10
1700
1900
2100
2300
RF FREQUENCY (MHz)
2500
1700
1900
2100
2300
2500
RF FREQUENCY (MHz)
______________________________________________________________________________________
15
MAX19995
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the UMTS band, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25°C, unless otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the UMTS band, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25°C, unless otherwise noted.)
CHANNEL ISOLATION vs. RF FREQUENCY
TC = -30°C, +25°C, +85°C
35
1900
2100
2300
30
1700
2100
2300
1700
2500
2100
2300
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
TC = -30°C, +25°C
-25
-30
-35
-40
-45
-20
VCC = 5.25V
RF-TO-IF ISOLATION vs. RF FREQUENCY
1700
1900
2100
RF-TO-IF ISOLATION (dB)
45
40
35
30
2300
2100
2300
RF FREQUENCY (MHz)
VCC = 4.75V
1500
PLO = -3dBm, 0dBm, +3dBm
45
2500
1700
1900
2100
2300
LO FREQUENCY (MHz)
40
35
RF-TO-IF ISOLATION vs. RF FREQUENCY
50
VCC = 4.75V, 5.0V, 5.25V
45
40
35
30
30
1900
-40
RF-TO-IF ISOLATION vs. RF FREQUENCY
50
MAX19995 toc73
TC = -30°C, +25°C, +85°C
-35
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
50
VCC = 5.0V
-30
-50
1500
2300
RF-TO-IF ISOLATION (dB)
2100
MAX19995 toc74
1900
-25
-45
-50
1700
2500
MAX19995 toc72
MAX19995 toc71
PLO = -3dBm, 0dBm, +3dBm
LO LEAKAGE AT IF PORT (dBm)
-40
-20
LO LEAKAGE AT IF PORT (dBm)
MAX19995 toc70
-35
1700
1900
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-50
16
1900
RF FREQUENCY (MHz)
-30
1500
VCC = 4.75V, 5.0V, 5.25V
40
RF FREQUENCY (MHz)
TC = +85°C
-45
45
RF FREQUENCY (MHz)
-20
-25
2500
50
35
30
1700
MAX19995 toc69
MAX19995 toc68
PLO = -3dBm, 0dBm, +3dBm
40
35
30
LO LEAKAGE AT IF PORT (dBm)
45
55
MAX19995 toc75
45
50
60
CHANNEL ISOLATION (dB)
50
40
55
CHANNEL ISOLATION (dB)
CHANNEL ISOLATION (dB)
55
CHANNEL ISOLATION vs. RF FREQUENCY
CHANNEL ISOLATION vs. RF FREQUENCY
60
MAX19995 toc67
60
RF-TO-IF ISOLATION (dB)
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
1700
1900
2100
2300
RF FREQUENCY (MHz)
2500
1700
1900
2100
2300
RF FREQUENCY (MHz)
______________________________________________________________________________________
2500
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
TC = -30°C, +25°C, +85°C
-60
-70
1600
1800
2000
2200
-60
2400
MAX19995 toc78
-60
-70
1400
1600
1800
2000
2200
2400
1400
1600
1800
2000
2200
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-40
TC = +85°C
-50
-30
-40
PLO = -3dBm
-50
1600
1800
2000
2200
1400
2400
-20
-30
-40
VCC = 4.75V, 5.0V, 5.25V
-50
-60
-60
-60
1600
1800
2000
2200
1400
2400
1600
1800
2000
2200
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO SWITCH ISOLATION
vs. LO FREQUENCY
LO SWITCH ISOLATION
vs. LO FREQUENCY
LO SWITCH ISOLATION
vs. LO FREQUENCY
TC = +25°C
50
TC = +85°C
40
60
50
PLO = -3dBm, 0dBm, +3dBm
1700
1850
2000
LO FREQUENCY (MHz)
2150
2300
2400
60
50
VCC = 4.75V, 5.0V, 5.25V
40
40
1550
70
LO SWITCH ISOLATION (dB)
60
70
MAX19995 toc83
TC = -30°C
LO SWITCH ISOLATION (dB)
MAX19995 toc82
70
2400
MAX19995 toc81
-20
-10
2LO LEAKAGE AT RF PORT (dBm)
TC = +25°C
PLO = 0dBm, +3dBm
2LO LEAKAGE AT RF PORT (dBm)
MAX19995 toc79
-30
-10
MAX19995 toc80
LO FREQUENCY (MHz)
-20
1400
VCC = 4.75V, 5.0V, 5.25V
-50
LO FREQUENCY (MHz)
TC = -30°C
1400
-40
LO FREQUENCY (MHz)
-10
2LO LEAKAGE AT RF PORT (dBm)
PLO = -3dBm, 0dBm, +3dBm
-50
-70
1400
LO SWITCH ISOLATION (dB)
-40
-30
MAX19995 toc84
-50
-30
-20
LO LEAKAGE AT RF PORT (dBm)
-40
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc77
-30
-20
LO LEAKAGE AT RF PORT (dBm)
MAX19995 toc76
LO LEAKAGE AT RF PORT (dBm)
-20
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
1400
1550
1700
1850
2000
LO FREQUENCY (MHz)
2150
2300
1400
1550
1700
1850
2000
2150
2300
LO FREQUENCY (MHz)
______________________________________________________________________________________
17
MAX19995
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the UMTS band, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25°C, unless otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the UMTS band, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25°C, unless otherwise noted.)
RF PORT RETURN LOSS
vs. RF FREQUENCY
30
40
VCC = 4.75V, 5.0V, 5.25V
10
15
MAX19995 toc87
LO SELECTED RETURN LOSS (dB)
20
fLO = 1610MHz
5
0
MAX19995 toc86
PLO = -3dBm, 0dBm, +3dBm
0
IF PORT RETURN LOSS (dB)
fIF = 190MHz
10
LO SELECTED RETURN LOSS
vs. LO FREQUENCY
IF PORT RETURN LOSS
vs. IF FREQUENCY
MAX19995 toc85
0
RF PORT RETURN LOSS (dB)
5
10
PLO = +3dBm
PLO = 0dBm
15
20
25
PLO = -3dBm
50
30
20
1900
2100
2300
2500
50
140
230
RF FREQUENCY (MHz)
320
410
400
VCC = 5.25V
SUPPLY CURRENT (mA)
5
1800
2000
SUPPLY CURRENT
vs. TEMPERATURE (TC)
MAX19995 toc88
0
10
15
20
380
360
VCC = 5.0V
340
PLO = -3dBm, 0dBm, +3dBm
VCC = 4.75V
320
30
1400
1600
1800
2000
LO FREQUENCY (MHz)
18
1600
LO FREQUENCY (MHz)
LO UNSELECTED RETURN LOSS
vs. LO FREQUENCY
25
1400
500
IF FREQUENCY (MHz)
MAX19995 toc89
1700
LO UN SELECTED RETURN LOSS (dB)
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
2200
2400
-35
-15
5
25
45
65
85
TEMPERATURE (°C)
______________________________________________________________________________________
2200
2400
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
6
8
7
PLO = -3dBm, 0dBm, +3dBm
2100
2300
1700
2500
INPUT IP3 vs. RF FREQUENCY
2100
2300
1700
2500
MAX19995 toc93
TC = +85°C VCC = 3.3V
PRF = -5dBm/TONE
22
16
VCC = 3.3V
PRF = -5dBm/TONE
18
16
PLO = -3dBm, 0dBm, +3dBm
VCC = 3.6V
20
18
16
VCC = 3.0V
12
12
2100
2300
2500
1700
RF FREQUENCY (MHz)
10
9
12
11
10
9
6
2300
RF FREQUENCY (MHz)
2500
2500
12
VCC = 3.0V
11
10
9
VCC = 3.3V, 3.6V
7
6
6
2100
2300
13
8
PLO = -3dBm, 0dBm, +3dBm
7
TC = -30°C
2100
NOISE FIGURE vs. RF FREQUENCY
VCC = 3.3V
8
TC = +25°C
1900
RF FREQUENCY (MHz)
NOISE FIGURE (dB)
11
8
1700
2500
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE (dB)
NOISE FIGURE (dB)
TC = +85°C
2300
13
MAX19995 toc96
12
2100
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
VCC = 3.3V
1900
MAX19995 toc97
1900
1900
VCC = 3.3V
PRF = -5dBm/TONE
MAX19995 toc98
12
1700
2500
14
14
TC = +25°C
7
2300
VCC = 3.3V
14
13
MAX19995 toc92
22
TC = -30°C
1700
2100
INPUT IP3 vs. RF FREQUENCY
20
INPUT IP3 (dBm)
18
1900
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
22
INPUT IP3 (dBm)
VCC = 3.0V
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
20
1900
INPUT IP3 (dBm)
1900
MAX19995 toc94
1700
7
5
5
5
8
6
6
TC = +25°C
VCC = 3.3V
9
MAX19995 toc95
TC = +85°C
9
VCC = 3.6V
10
CONVERSION GAIN (dB)
8
11
MAX19995 toc91
VCC = 3.3V
10
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
9
7
11
MAX19995 toc90
VCC = 3.3V
TC = -30°C
10
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
11
1700
1900
2100
2300
RF FREQUENCY (MHz)
2500
1700
1900
2100
2300
2500
RF FREQUENCY (MHz)
______________________________________________________________________________________
19
MAX19995
Typical Operating Characteristics (continued)
(Typical Application Circuit, R1 = R4 = 909Ω, R2 = R5 = 2.49kΩ, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected
for a 190MHz IF, TC = +25°C, unless otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit, R1 = R4 = 909Ω, R2 = R5 = 2.49kΩ, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected
for a 190MHz IF, TC = +25°C, unless otherwise noted.)
50
TC = +25°C
40
2300
2500
RF FREQUENCY (MHz)
2100
60
50
TC = +25°C
TC = -30°C
3RF-3LO RESPONSE (dBc)
PRF = -5dBm
VCC = 3.3V
70
30
2300
2500
1700
60
2300
50
PLO = -3dBm, 0dBm, +3dBm
40
2500
VCC = 3.6V
1900
2100
2300
12
VCC = 3.3V
11
8
TC = +25°C
6
5
1900
2100
2300
RF FREQUENCY (MHz)
2500
1900
2100
2300
2500
RF FREQUENCY (MHz)
INPUT P1dB vs. RF FREQUENCY
10
9
8
PLO = -3dBm, 0dBm, +3dBm
12
VCC = 3.3V
11
VCC = 3.6V
10
9
8
7
7
6
6
VCC = 3.0V
5
5
1700
1700
2500
INPUT P1dB (dBm)
INPUT P1dB (dBm)
9
7
VCC = 3.3V
40
INPUT P1dB vs. RF FREQUENCY
10
TC = -30°C
50
30
1700
MAX19995 toc105
VCC = 3.3V
TC = +85°C
2500
PRF = -5dBm
60
RF FREQUENCY (MHz)
11
2300
VCC = 3.0V
INPUT P1dB vs. RF FREQUENCY
12
2100
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19995 toc106
2100
1900
70
30
1900
VCC = 3.0V
RF FREQUENCY (MHz)
PRF = -5dBm
VCC = 3.3V
RF FREQUENCY (MHz)
20
1900
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19995 toc102
3RF-3LO RESPONSE (dBc)
TC = +85°C
1700
50
RF FREQUENCY (MHz)
3RF-3LO RESPONSE vs. RF FREQUENCY
70
40
60
40
1700
3RF-3LO RESPONSE (dBc)
2100
MAX19995 toc103
1900
VCC = 3.3V
PLO = 0dBm, +3dBm
40
1700
70
MAX19995 toc104
TC = -30°C
60
PRF = -5dBm
VCC = 3.6V
MAX19995 toc107
50
PLO = -3dBm
70
80
2RF-2LO RESPONSE (dBc)
60
PRF = -5dBm
VCC = 3.3V
2RF-2LO RESPONSE vs. RF FREQUENCY
MAX19995 toc100
70
2RF-2LO RESPONSE (dBc)
2RF-2LO RESPONSE (dBc)
TC = +85°C
2RF-2LO RESPONSE vs. RF FREQUENCY
80
MAX19995 toc99
PRF = -5dBm
VCC = 3.3V
MAX19995 toc101
2RF-2LO RESPONSE vs. RF FREQUENCY
80
INPUT P1dB (dBm)
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
1700
1900
2100
2300
RF FREQUENCY (MHz)
2500
1700
1900
2100
2300
RF FREQUENCY (MHz)
______________________________________________________________________________________
2500
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
TC = -30°C, +25°C, +85°C
1900
2100
2300
1900
MAX19995 toc110
1700
2500
2300
1900
2100
2300
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-40
TC = +85°C
-45
-50
TC = +25°C
VCC = 3.3V
-35
-40
PLO = -3dBm
-45
-50
PLO = 0dBm
-55
TC = -30°C
-30
2300
1700
LO FREQUENCY (MHz)
1900
2100
2300
45
40
35
VCC = 3.3V
55
PLO = -3dBm, 0dBm, +3dBm
50
30
45
40
2300
RF FREQUENCY (MHz)
2500
1900
2100
2300
RF-TO-IF ISOLATION vs. RF FREQUENCY
60
55
VCC = 3.0V, 3.3V, 3.6V
50
45
40
35
30
2100
1700
LO FREQUENCY (MHz)
35
1900
VCC = 3.3V
1500
RF-TO-IF ISOLATION (dB)
TC = +85°C
50
VCC = 3.0V
RF-TO-IF ISOLATION vs. RF FREQUENCY
60
RF-TO-IF ISOLATION (dB)
TC = +25°C
MAX19995 toc114
TC = -30°C
55
-50
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
VCC = 3.3V
-45
-60
1500
MAX19995 toc115
2100
-40
-55
-60
1900
VCC = 3.6V
-35
PLO = +3dBm
-60
1700
2500
MAX19995 toc113
-30
LO LEAKAGE AT IF PORT (dBm)
MAX19995 toc111
-35
-55
RF-TO-IF ISOLATION (dB)
2100
RF FREQUENCY (MHz)
VCC = 3.3V
1700
VCC = 3.0V, 3.3V, 3.6V
40
RF FREQUENCY (MHz)
-30
1500
45
30
1700
2500
LO LEAKAGE AT IF PORT (dBm)
1700
50
35
30
30
60
MAX19995 toc109
PLO = -3dBm, 0dBm, +3dBm
40
35
35
LO LEAKAGE AT IF PORT (dBm)
45
55
MAX19995 toc116
40
50
60
CHANNEL ISOLATION (dB)
45
VCC = 3.3V
55
MAX19995 toc112
CHANNEL ISOLATION (dB)
50
60
CHANNEL ISOLATION (dB)
MAX19995 toc108
VCC = 3.3V
55
CHANNEL ISOLATION vs. RF FREQUENCY
CHANNEL ISOLATION vs. RF FREQUENCY
CHANNEL ISOLATION vs. RF FREQUENCY
60
30
1700
1900
2100
2300
RF FREQUENCY (MHz)
2500
1700
1900
2100
2300
2500
RF FREQUENCY (MHz)
______________________________________________________________________________________
21
MAX19995
Typical Operating Characteristics (continued)
(Typical Application Circuit, R1 = R4 = 909Ω, R2 = R5 = 2.49kΩ, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected
for a 190MHz IF, TC = +25°C, unless otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit, R1 = R4 = 909Ω, R2 = R5 = 2.49kΩ, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected
for a 190MHz IF, TC = +25°C, unless otherwise noted.)
TC = -30°C
-40
-50
TC = +25°C
-60
-30
-40
-50
PLO = -3dBm, 0dBm, +3dBm
-60
-20
VCC = 3.6V
-30
-40
-50
VCC = 3.0V
-60
VCC = 3.3V
TC = +85°C
-70
-70
1600
1800
2000
2200
1800
2000
2200
2400
1400
2000
2200
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-50
-60
PLO = -3dBm, 0dBm, +3dBm
-20
-30
-40
-50
-10
VCC = 3.6V
2LO LEAKAGE AT RF PORT (dBm)
-40
VCC = 3.3V
2LO LEAKAGE AT RF PORT (dBm)
-30
-10
MAX19995 toc121
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
TC = -30°C, +25°C, +85°C
1600
1800
2000
2200
2400
-20
VCC = 3.3V
-30
-40
VCC = 3.0V
-50
1400
1600
1800
2000
2200
1400
2400
1600
1800
2000
2200
LO FREQUENCY (MHz)
LO SWITCH ISOLATION
vs. LO FREQUENCY
LO SWITCH ISOLATION
vs. LO FREQUENCY
LO SWITCH ISOLATION
vs. LO FREQUENCY
60
50
TC = +85°C
60
50
40
1850
2000
LO FREQUENCY (MHz)
50
40
40
1700
VCC = 3.0V, 3.3V, 3.6V
60
PLO = -3dBm, 0dBm, +3dBm
TC = +25°C
1550
70
2400
MAX19995 toc125
VCC = 3.3V
LO SWITCH ISOLATION (dB)
TC = -30°C
70
LO SWITCH ISOLATION (dB)
VCC = 3.3V
MAX19995 toc124
LO FREQUENCY (MHz)
MAX19995 toc123
LO FREQUENCY (MHz)
70
2400
-60
-60
1400
1800
LO FREQUENCY (MHz)
-20
1400
1600
LO FREQUENCY (MHz)
VCC = 3.3V
22
1600
LO FREQUENCY (MHz)
-10
2LO LEAKAGE AT RF PORT (dBm)
-70
1400
2400
MAX19995 toc120
1400
MAX19995 toc119
VCC = 3.3V
MAX19995 toc122
-30
-20
LO LEAKAGE AT RF PORT (dBm)
LO LEAKAGE AT RF PORT (dBm)
VCC = 3.3V
LO LEAKAGE AT RF PORT (dBm)
MAX19995 toc117
-20
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc118
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO SWITCH ISOLATION (dB)
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
2150
2300
1400
1550
1700
1850
2000
LO FREQUENCY (MHz)
2150
2300
1400
1550
1700
1850
2000
LO FREQUENCY (MHz)
______________________________________________________________________________________
2150
2300
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
20
30
40
VCC = 3.0V, 3.3V, 3.6V
10
15
VCC = 3.3V
5
10
MAX19995 toc128
5
0
LO SELECTED RETURN LOSS (dB)
PLO = -3dBm, 0dBm, +3dBm
fLO = 1610MHz
MAX19995 toc86
IF PORT RETURN LOSS (dB)
10
0
MAX19995 toc126
fIF = 190MHz
VCC = 3.3V
PLO = 0dBm
PLO = +3dBm
15
20
25
PLO = -3dBm
30
20
1700
1900
2100
2300
50
2500
140
230
320
1400
500
410
1600
VCC = 3.6V
SUPPLY CURRENT (mA)
5
260
MAX19995 toc129
VCC = 3.3V
2000
2200
2400
SUPPLY CURRENT
vs. TEMPERATURE (TC)
LO UNSELECTED RETURN LOSS
vs. LO FREQUENCY
0
1800
LO FREQUENCY (MHz)
IF FREQUENCY (MHz)
RF FREQUENCY (MHz)
10
15
20
MAX19995 toc130
50
LO UN SELECTED RETURN LOSS (dB)
RF PORT RETURN LOSS (dB)
0
LO SELECTED RETURN LOSS
vs. LO FREQUENCY
IF PORT RETURN LOSS
vs. IF FREQUENCY
RF PORT RETURN LOSS
vs. RF FREQUENCY
VCC = 3.3V
240
220
200
PLO = -3dBm, 0dBm, +3dBm
25
VCC = 3.0V
180
30
1400
1600
1800
2000
LO FREQUENCY (MHz)
2200
2400
-35
-15
5
25
45
65
85
TEMPERATURE (°C)
______________________________________________________________________________________
23
MAX19995
Typical Operating Characteristics (continued)
(Typical Application Circuit, R1 = R4 = 909Ω, R2 = R5 = 2.49kΩ, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected
for a 190MHz IF, TC = +25°C, unless otherwise noted.)
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
Pin Description
PIN
NAME
1
RFMAIN
2
TAPMAIN
3, 5, 7, 12,
20, 22, 24,
25, 26, 34
GND
Ground
4, 6, 10,
16, 21,
30, 36
VCC
Power Supply. Bypass to GND with capacitors shown in the Typical Application Circuit as close as
possible to the pin.
8
TAPDIV
Diversity Channel Balun Center Tap. Bypass to GND with 39pF and 0.033µF capacitors as close as
possible to the pin with the smaller value capacitor closer to the part.
9
RFDIV
11
IFD_SET
IF Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for
the diversity IF amplifier.
13, 14
IFD+, IFD-
Diversity Mixer Differential IF Output. Connect pullup inductors from each of these pins to VCC (see the
Typical Application Circuit).
15
IND_EXTD
Diversity External Inductor Connection. Connect this pin to ground. For improved RF-to-IF and
LO-to-IF isolation, connect a low-ESR 10nH inductor from this pin to ground (see the Typical Operating
Characteristics for typical performance vs. inductor value).
17
LO_ADJ_D
LO Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for
the diversity LO amplifier.
18, 28
N.C.
No Connection. Not internally connected.
19
LO1
Local Oscillator 1 Input. This input is internally matched to 50Ω. Requires an input DC-blocking
capacitor.
23
LOSEL
27
LO2
29
LO_ADJ_M
LO Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the
main LO amplifier.
31
IND_EXTM
Main External Inductor Connection. Connect this pin to ground. For improved RF-to-IF and LO-to-IF
isolation, connect a low-ESR 10nH inductor from this pin to ground (see the Typical Operating
Characteristics for typical performance vs. Inductor value).
32, 33
IFM-, IFM+
Main Mixer Differential IF Output. Connect pullup inductors from each of these pins to VCC (see the
Typical Application Circuit).
35
IFM_SET
IF Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the
main IF amplifier.
—
EP
Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple
ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple via
grounds are also required to achieve the noted RF performance.
24
FUNCTION
Main Channel RF Input. Internally matched to 50Ω. Requires an input DC-blocking capacitor.
Main Channel Balun Center Tap. Bypass to GND with 39pF and 0.033µF capacitors as close as
possible to the pin with the smaller value capacitor closer to the part.
Diversity Channel RF Input. Internally matched to 50Ω. Requires an input DC-blocking capacitor.
Local Oscillator Select. Set this pin to high to select LO1. Set to low to select LO2.
Local Oscillator 2 Input. This input is internally matched to 50Ω. Requires an input DC-blocking
capacitor.
______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
The MAX19995 is a dual-channel downconverter
designed to provide 9dB of conversion gain,
+24.8dBm input IP3, +13.3dBm 1dB input compression point, and a noise figure of 9dB.
In addition to its high-linearity performance, the
MAX19995 achieves a high level of component integration. The device integrates two double-balanced mixers
for two-channel downconversion. Both the main and
diversity channels include a balun and matching circuitry to allow 50Ω single-ended interfaces to the RF
ports and the two LO ports. An integrated single-pole,
double-throw (SPDT) switch provides 50ns switching
time between the two LO inputs, with 56dB of LO-to-LO
isolation and -31dBm of LO leakage at the RF port.
Furthermore, the integrated LO buffers provide a high
drive level to each mixer core, reducing the LO drive
required at the MAX19995’s inputs to a range of -3dBm
to +3dBm. The IF ports for both channels incorporate
differential outputs for downconversion, which is ideal
for providing enhanced 2RF-2LO performance.
Specifications are guaranteed over broad frequency
ranges to allow for use in WCDMA/LTE, DCS1800/
PCS1900 GSM/EDGE, and cdma2000 base stations.
The MAX19995 is specified to operate over an RF input
range of 1700MHz to 2200MHz, an LO range of
1400MHz to 2000MHz, and an IF range of 50MHz to
500MHz. The external IF components set the lower frequency range. Operation beyond these ranges is possible; see the Typical Operating Characteristics for
additional information. Although this device is optimized for low-side LO injection applications, it can
operate in high-side LO injection modes as well.
However, performance degrades as fLO continues to
increase. For increased high-side LO performance,
refer to the MAX19995A data sheet.
RF Port and Balun
The RF input ports of both the main and diversity channels are internally matched to 50Ω, requiring no external matching components. A DC-blocking capacitor is
required as the input is internally DC shorted to ground
through the on-chip balun. The RF port input return loss
is typically better than 16dB over the RF frequency
range of 1700MHz to 2200MHz.
LO Inputs, Buffer, and Balun
The MAX19995 is optimized for a 1400MHz to
2000MHz LO frequency range. As an added feature,
the MAX19995 includes an internal LO SPDT switch for
use in frequency-hopping applications. The switch
selects one of the two single-ended LO ports, allowing
the external oscillator to settle on a particular frequency
before it is switched in. LO switching time is typically
50ns, which is more than adequate for typical GSM
applications. If frequency hopping is not employed,
simply set the switch to either of the LO inputs. The
switch is controlled by a digital input (LOSEL), where
logic-high selects LO1 and logic-low selects LO2. LO1
and LO2 inputs are internally matched to 50Ω, requiring only 39pF DC-blocking capacitors.
If LOSEL is connected directly to a logic source, then
voltage MUST be applied to VCC before digital logic is
applied to LOSEL to avoid damaging the part.
Alternatively, a 1kΩ resistor can be placed in series at
the LOSEL to limit the input current in applications
where LOSEL is applied before VCC.
The main and diversity channels incorporate a twostage LO buffer that allows for a wide-input power
range for the LO drive. The on-chip low-loss baluns,
along with LO buffers, drive the double-balanced mixers. All interfacing and matching components from the
LO inputs to the IF outputs are integrated on chip.
High-Linearity Mixer
The core of the MAX19995 dual-channel downconverter
consists of two double-balanced, high-performance
passive mixers. Exceptional linearity is provided by the
large LO swing from the on-chip LO buffers. When combined with the integrated IF amplifiers, the cascaded
IIP3, 2RF-2LO rejection, and noise figure performance
are typically +24.8dBm, 79dBc, and 9dB, respectively.
______________________________________________________________________________________
25
MAX19995
Detailed Description
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
Differential IF
IND_EXT_ Inductors
The MAX19995 has an IF frequency range of 50MHz to
500MHz, where the low-end/high-end frequency
depends on the frequency response of the external IF
components. Note that these differential ports are ideal
for providing enhanced IIP2 performance. Singleended IF applications require a 4:1 (impedance ratio)
balun to transform the 200Ω differential IF impedance
to a 50Ω single-ended system. After the balun, the
return loss is typically 12.5dB. The user can use a differential IF amplifier on the mixer IF ports, but a DC
block is required on both IFD+/IFD- and IFM+/IFMports to keep external DC from entering the IF ports of
the mixer.
For applications requiring optimum RF-to-IF and LO-toIF isolation, connect low-ESR inductors from IND_EXT_
(pins 15 and 31) to ground. When improved isolation is
not required, connect IND_EXT_ to ground using a 0Ω
resistance. See the Typical Operating Characteristics to
evaluate the isolation vs. inductor value tradeoff.
Applications Information
Input and Output Matching
The RF and LO inputs are internally matched to 50Ω.
No matching components are required. The RF port
input return loss is typically better than 16dB over the
RF frequency range of 1700MHz to 2200MHz and
return loss at the LO ports are typically better than
16dB over the entire LO range. RF and LO inputs
require only DC-blocking capacitors for interfacing.
The IF output impedance is 200Ω (differential). For
evaluation, an external low-loss 4:1 (impedance ratio)
balun transforms this impedance to a 50Ω single-ended
output (see the Typical Application Circuit).
Reduced-Power Mode
Each channel of the MAX19995 has two pins
(LO_ADJ_, IF_SET) that allow external resistors to set
the internal bias currents. Nominal values for these
resistors are given in Table 1. Larger value resistors
can be used to reduce power dissipation at the
expense of some performance loss. See the Typical
Operating Characteristics to evaluate the biasing vs.
performance tradeoff. If ±1% resistors are not readily
available, ±5% resistors may be substituted.
Significant reductions in power consumption can also be
realized by operating the mixer with an optional supply
voltage of +3.3V. Doing so reduces the overall power
consumption by up to 62%. See the +3.3V Supply AC
Electrical Characteristics and the relevant +3.3V curves
in the Typical Operating Characteristics section.
26
Layout Considerations
A properly designed PCB is an essential part of any
RF/microwave circuit. Keep RF signal lines as short as
possible to reduce losses, radiation, and inductance.
The load impedance presented to the mixer must be
such that any capacitance from both IF- and IF+ to
ground does not exceed several picofarads. For the
best performance, route the ground pin traces directly
to the exposed pad under the package. The PCB
exposed pad MUST be connected to the ground plane
of the PCB. It is suggested that multiple vias be used to
connect this pad to the lower-level ground planes. This
method provides a good RF/thermal-conduction path for
the device. Solder the exposed pad on the bottom of the
device package to the PCB. The MAX19995 evaluation
kit can be used as a reference for board layout. Gerber
files are available upon request at www.maxim-ic.com.
Power-Supply Bypassing
Proper voltage-supply bypassing is essential for highfrequency circuit stability. Bypass each VCC pin and
TAPMAIN/TAPDIV with the capacitors shown in the
Typical Application Circuit (see Table 1 for component
values). Place the TAPMAIN/TAPDIV bypass capacitors
to ground within 100 mils of the pin.
Exposed Pad RF/Thermal Considerations
The exposed pad (EP) of the MAX19995’s 36-pin thin
QFN-EP package provides a low thermal-resistance
path to the die. It is important that the PCB on which the
MAX19995 is mounted be designed to conduct heat
from the EP. In addition, provide the EP with a lowinductance path to electrical ground. The EP MUST be
soldered to a ground plane on the PCB, either directly
or through an array of plated via holes.
______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
MAX19995
Table 1. Component Values
COMPONENT
VALUE
C1, C2, C7, C8, C14, C16
39pF
C3, C6
0.033µF
C4, C5
—
C9, C13, C15, C17, C18
0.01µF
Microwave capacitors (0402)
C10, C11, C12, C19, C20, C21
150pF
Microwave capacitors (0603)
L1, L2, L4, L5
330nH
Wire-wound high-Q inductors (0805)
L3, L6
10nH
Wire-wound high-Q inductors (0603). Smaller values can be
used at the expense of some performance loss (see the
Typical Operating Characteristics).
806Ω
±1% resistors (0402). Used for DCS/PCS band, VCC = +5.0V
applications. Larger values can be used to reduce power at the
expense of some performance loss.
681Ω
±1% resistors (0402). Used for UMTS band, VCC = +5.0V
applications. Larger values can be used to reduce power at
the expense of some performance loss.
909Ω
±1% resistors (0402). Used for VCC = +3.3V applications.
R1, R4
DESCRIPTION
Microwave capacitors (0402)
Microwave capacitors (0603)
Not used
2.32kΩ
±1% resistors (0402). Used for DCS/PCS band, VCC = +5.0V
applications. Larger values can be used to reduce power at the
expense of some performance loss.
1.5kΩ
±1% resistors (0402). Used for UMTS band, VCC = +5.0V
applications. Larger values can be used to reduce power at
the expense of some performance loss.
2.49kΩ
±1% resistors (0402). Used for VCC = +3.3V applications.
R2, R5
R3, R6
0Ω
T1, T2
4:1
0Ω resistors (1206)
Transformers (200:50)
U1
—
MAX19995 IC
______________________________________________________________________________________
27
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
MAX19995
Typical Application Circuit
C19
T1
L1
VCC
IF MAIN OUTPUT
C21
R3
L2
4:1
R1
C20
VCC
RF MAIN INPUT
TAPMAIN
C3
C2
GND
VCC
VCC
C4
GND
VCC
VCC
C5
GND
C6
C7 TAPDIV
RFDIV
RF DIV INPUT
C17
28 N.C.
LO_ADJ_M
R2
29
30
31
VCC
IND_EXTM
IFM32
IFM+
33
GND
34
IFM_SET
35
+
RFMAIN
36
VCC
C18
C1
VCC
L3
C16
1
27
MAX19995
2
26
3
25
4
24
5
23
6
22
7
21
EXPOSED
PAD
8
20
9
19
LO2
LO2
GND
GND
GND
LOSEL
LO SELECT
GND
VCC
VCC
C15
GND
LO1
LO1
C14
18
N.C.
17
LO_ADJ_D
VCC
16
15
14
IFD-
13
IFD+
12
GND
11
R4
IND_EXTD
C9
IFD_SET
VCC
VCC
10
C8
R5
VCC
C13
L6
C11
T2
L5
VCC
C12
R6
IF DIV OUTPUT
L4
4:1
C10
28
______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
28 N.C.
29 LO_ADJ_M
30 VCC
31 IND_EXTM
32 IFM-
33 IFM+
34 GND
35 IFM_SET
36 VCC
TOP VIEW
+
RFMAIN
1
MAX19995
27
LO2
26
GND
TAPMAIN
2
GND
3
25
GND
VCC
4
24
GND
GND
5
23
LOSEL
VCC
6
22
GND
GND
7
21
VCC
20
GND
19
LO1
16
17
18
VCC
LO_ADJ_D
N.C.
14
IFD-
15
13
IFD+
IND_EXTD
12
GND
11
9
IFD_SET
RFDIV
10
8
VCC
TAPDIV
EXPOSED
PAD
THIN QFN (EXPOSED PAD)
6mm x 6mm
EXPOSED PAD ON THE BOTTOM OF THE PACKAGE
Chip Information
PROCESS: SiGe BiCMOS
Package Information
For the latest package outline information and land patterns, go
to www.maxim-ic.com/packages.
PACKAGE TYPE
PACKAGE CODE
DOCUMENT NO.
36 Thin QFN-EP
T3666+2
21-0141
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 29
© 2008 Maxim Integrated Products
is a registered trademark of Maxim Integrated Products, Inc.
MAX19995
Pin Configuration/Functional Diagram