NCE N-Channel Enhancement Mode Power MOSFET

Pb Free Product
NCE2301D
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NCE P-Channel Enhancement Mode Power MOSFET
Description
D
The NCE2301D uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
G
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications.
S
General Features
Schematic diagram
● VDS = -20V,ID = -2 A
RDS(ON) < 160mΩ @ VGS=-2.5V
RDS(ON) < 120mΩ @ VGS=-4.5V
● High power and current handing capability
● Lead free product is acquired
Marking and pin assignment
● Surface mount package
Application
● PWM applications
● Load switch
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
2301D
NCE2301D
SOT-23
Ø180mm
8 mm
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±12
V
ID
-2.0
A
IDM
-10
A
PD
0.7
W
TJ,TSTG
-55 To 150
℃
RθJA
178
℃/W
Drain Current-Continuous
Drain Current -Pulsed
(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-20
Zero Gate Voltage Drain Current
IDSS
VDS=-20V,VGS=0V
-
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Typ
Max
Unit
-
V
-1
μA
Off Characteristics
-
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NCE2301D
http://www.ncepower.com
Parameter
Symbol
Condition
Min
Typ
Max
Unit
IGSS
VGS=±12V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-0.4
-0.7
-1
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-4.5V, ID=-2 A
-
102
135
mΩ
VGS=-2.5V, ID=-1.8A
-
140
170
mΩ
VDS=-5V,ID=-2A
4
-
-
S
-
290
-
PF
-
60
-
PF
-
34
-
PF
-
10
-
nS
Gate-Body Leakage Current
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
gFS
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
Crss
VDS=-10V,VGS=0V,
F=1.0MHz
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=-10V, RL=5Ω
-
5.0
-
nS
td(off)
VGS=-4.5V,RGEN=3Ω
-
21
-
nS
-
7
-
nS
-
3.0
-
nC
-
0.5
-
nC
-
0.8
-
nC
-
-
-1.2
V
-
-
-2.0
A
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-10V,ID=-2A,
VGS=-4.5V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
VSD
IS
VGS=0V,IS=-2A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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NCE2301D
http://www.ncepower.com
Typical Electrical and Thermal Characteristics
ton
tr
td(on)
toff
tf
td(off)
90%
VOUT
90%
INVERTED
10%
10%
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
PD Power(W)
-ID- Drain Current (A)
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 4 Drain Current
ID- Drain Current (A)
Rdson On-Resistance(Ω)
Figure 3 Power Dissipation
-ID- Drain Current (A)
-Vds Drain-Source Voltage (V)
Figure 5 Output Characteristics
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Figure 6 Drain-Source On-Resistance
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Pb Free Product
NCE2301D
ID- Drain Current (A)
Normalized On-Resistance
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TJ-Junction Temperature(℃)
-Vgs Gate-Source Voltage (V)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(Ω)
Figure 7 Transfer Characteristics
-Vgs Gate-Source Voltage (V)
-Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
-Vgs Gate-Source Voltage (V)
-Is- Reverse Drain Current (A)
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
-Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Wuxi NCE Power Semiconductor Co., Ltd
Figure 12 Source- Drain Diode Forward
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NCE2301D
ID- Drain Current (A)
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Vds Drain-Source Voltage (V)
r(t),Normalized Effective
Transient Thermal Impedance
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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NCE2301D
http://www.ncepower.com
SOT-23 Package Information
Symbol
Dimensions in Millimeters
MIN.
MAX.
A
0.900
1.150
A1
0.000
0.100
A2
0.900
1.050
b
0.300
0.500
c
0.080
0.150
D
2.800
3.000
E
1.200
1.400
E1
2.250
2.550
e
e1
0.950TYP
1.800
L
2.000
0.550REF
L1
0.300
0.500
θ
0°
8°
Notes
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
http://www.ncepower.com
NCE2301D
Attention:
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Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
such applications.
NCE power assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
In the event that any or all NCE power products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported without
obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
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of NCE power Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power
product that you intend to use.
This catalog provides information as of Sep, 2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Semiconductor Co., Ltd
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