NCE N-Channel Enhancement Mode Power MOSFET

Pb Free Product
NCE3404Y
http://www.ncepower.com
NCE N-Channel Enhancement Mode Power MOSFET
D
Description
The NCE3404Y uses advanced trench technology to provide
G
excellent RDS(ON) and low gate charge.This device is suitable
for use as a load switch and PWM applications.
S
Genera Features
Schematic diagram
● VDS = 30V,ID = 5.8A
RDS(ON) < 28mΩ @ VGS=10V
RDS(ON) < 40mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface mount package
Marking and pin assignment
Application
●Load switch
●PWM application
SOT-23-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
3404Y
NCE3404Y
SOT-23-3L
Ø180mm
8 mm
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
ID
5.8
A
IDM
20
A
PD
1.4
W
TJ,TSTG
-55 To 150
℃
RθJA
89
℃/W
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
30
33
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
-
-
1
μA
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Off Characteristics
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NCE3404Y
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Parameter
Symbol
Condition
Min
Typ
Max
Unit
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1.2
1.6
2.4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=5A
-
23
28
mΩ
VGS=4.5V, ID=4A
-
27.5
40
mΩ
VDS=5V,ID=5A
-
15
-
S
-
255
-
PF
-
45
-
PF
-
35
-
PF
-
4.5
-
nS
Gate-Body Leakage Current
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
gFS
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
Crss
VDS=15V,VGS=0V,
F=1.0MHz
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=15V, RL=3Ω
-
2.5
-
nS
td(off)
VGS=10V,RGEN=3Ω
-
14.5
-
nS
-
3.5
-
nS
-
5.2
-
nC
-
0.85
-
nC
-
1.3
-
nC
-
-
1.2
V
-
-
5.8
A
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=15V,ID=5A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
VSD
IS
VGS=0V,IS=5A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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NCE3404Y
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Typical Electrical and Thermal Characteristics
Vdd
Vgs
Rgen
td(on)
Rl
Vin
D
ton
tr
td(off)
Vout
90%
VOUT
G
toff
tf
90%
INVERTED
10%
10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
ID- Drain Current (A)
ID- Drain Current (A)
Figure 1:Switching Test Circuit
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 4 Transfer Characteristics
Normalized On-Resistance
Rdson On-Resistance(mΩ)
Figure 3 Output Characteristics
TJ-Junction Temperature(℃)
ID- Drain Current (A)
Figure 5 Drain-Source On-Resistance
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Figure 6 Drain-Source On-Resistance
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NCE3404Y
PD Power(W)
Rdson On-Resistance(mΩ)
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TJ-Junction Temperature(℃)
Vgs Gate-Source Voltage (V)
Figure 8 Power Dissipation
Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (A)
Figure7 Rdson vs Vgs
Vds Drain-Source Voltage (V)
Qg Gate Charge (nC)
Figure 10 Source- Drain Diode Forward
ID- Drain Current (A)
C Capacitance (pF)
Figure 9 Gate Charge
Vds Drain-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 11 Capacitance vs Vds
Wuxi NCE Power Semiconductor Co., Ltd
Figure 12 Safe Operation Area
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NCE3404Y
r(t),Normalized Effective
Transient Thermal Impedance
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Square Wave Pluse Duration(sec)
Figure 13 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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NCE3404Y
SOT-23-3L Package Information
Notes
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Wuxi NCE Power Semiconductor Co., Ltd
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NCE3404Y
Attention:
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Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
such applications.
NCE power assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power
product that you intend to use.
This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Semiconductor Co., Ltd
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