NCE N-Channel Enhancement Mode Power MOSFET

Pb Free Product
NCE2011E
http://www.ncepower.com
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2011E uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.It is ESD protested.
General Features
Schematic diagram
● VDS = 20V,ID =11A
RDS(ON) < 7mΩ @ VGS=2.5V
RDS(ON) < 9mΩ @ VGS=4.5V
ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
Marking and pin assignment
● Surface mount package
Application
● PWM application
● Load switch
TSSOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
2011E
NCE2011E
TSSOP-8
Ø330mm
12mm
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±10
V
ID
11
A
IDM
44
A
PD
1.6
W
TJ,TSTG
-55 To 150
℃
RθJA
78
℃/W
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
20
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
-
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
Typ
Max
Unit
-
V
1
μA
Off Characteristics
-
v1.0
Pb Free Product
NCE2011E
http://www.ncepower.com
Parameter
Symbol
Condition
Min
Typ
Max
Unit
IGSS
VGS=±10V,VDS=0V
-
-
±10
μA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
0.6
0.8
1.2
V
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=10A
-
5.5
7
mΩ
VGS=2.5V, ID=5.5A
-
7
9
mΩ
VDS=5V,ID=11A
25
-
-
S
-
1710
-
PF
-
232
-
PF
-
200
-
PF
-
2.5
nS
Gate-Body Leakage Current
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
gFS
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
Crss
VDS=10V,VGS=0V,
F=1.0MHz
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=10V,RL=1Ω
-
7.2
nS
td(off)
VGS=10V,RGEN=3Ω
-
49
nS
-
10.8
nS
-
17.5
nC
-
1.5
-
nC
-
4.5
-
nC
-
-
1.2
V
-
-
11
A
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=10V,ID=10A,
VGS=4.5V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
VSD
IS
VGS=0V,IS=1A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
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Pb Free Product
NCE2011E
http://www.ncepower.com
Typical Electrical and Thermal Characteristics
Vdd
Vgs
Rgen
td(on)
Rl
Vin
D
ton
tr
td(off)
Vout
90%
VOUT
G
toff
tf
90%
INVERTED
10%
10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
PD Power(W)
ID- Drain Current (A)
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 4 Drain Current
ID- Drain Current (A)
Figure 3 Power Dissipation
Vds Drain-Source Voltage (V)
ID Drain Current (A)
Figure 5 Output Characteristics
Wuxi NCE Power Semiconductor Co., Ltd
Figure 6 Drain-Source On-Resistance
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Pb Free Product
NCE2011E
ID- Drain Current (A)
Normalized On-Resistance
http://www.ncepower.com
TJ-Junction Temperature(℃)
Vgs Gate-Source Voltage (V)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ)
Figure 7 Transfer Characteristics
Vds Drain-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (A)
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Wuxi NCE Power Semiconductor Co., Ltd
Figure 12 Source- Drain Diode Forward
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Pb Free Product
NCE2011E
ID- Drain Current (A)
http://www.ncepower.com
Vds Drain-Source Voltage (V)
r(t),Normalized Effective
Transient Thermal Impedance
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
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Pb Free Product
NCE2011E
http://www.ncepower.com
Tssop-8 Package Information
Symbol
D
E
b
c
E1
A
A2
A1
e
L
H
Θ
Wuxi NCE Power Semiconductor Co., Ltd
Dimensions In Millimeters
Min
Max
2.900
3.100
4.300
4.500
0.190
0.300
0.090
0.200
6.250
6.550
1.100
0.800
1.000
0.020
0.150
0.65(BSC)
0.500
0.700
0.25(TYP)
1°
7°
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Pb Free Product
http://www.ncepower.com
NCE2011E
Attention:
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Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
such applications.
NCE power assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
In the event that any or all NCE power products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported without
obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE power Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power
product that you intend to use.
This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Semiconductor Co., Ltd
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