Ordering number : ENA2196 NGTB20N60L2TF1G N-Channel IGBT http://onsemi.com 600V, 20A, VCE(sat);1.45V TO-3PF-3L with Low VF Switching Diode Features • IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V) • IGBT tf=67ns typ. • Diode VF=1.5V typ. (IF=20A) • Diode trr=70ns typ. • Adaption of full isolation type package • Enhansment type • Maxium junction temperature Tj=175°C Applications • Power factor correction of white goods appliance • General purpose inverter Specifications Absolute Maximum Ratings at Ta = 25°C, Unless otherwise specified Parameter Symbol Collector to Emitter Voltage VCES Gate to Emitter Voltage VGES Collector Current (DC) Collector Current (Pulse) Conditions IC*1 Limited by Tjmax ICP Pulse width Limited by Tjmax Diode Average Output Current IO Allowable Power Dissipation PD Ratings Unit 600 V ±20 V @ Tc=25°C *2 40 A @ Tc=100°C *2 20 A 80 A Tc=25°C (Our ideal heat dissipation condition) *2 Note : *1 Collector Current is calculated from the following formula. 20 A 64 W Continued on next page. Tjmax - Tc IC(Tc)= Rth(j-c)×VCE(sat)(Tjmax, IC(Tc)) *2 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Ordering & Package Information Package Dimensions unit : mm (typ) 7538-001 NGTB20N60L2TF1G Device Package Shipping note NGTB20N60L2TF1G TO-3PF-3L SC-94 30 pcs. / tube Pb-Free 5.5 15.5 4.5 3.0 Marking 10.0 3.6 Electrical Connection 3.5 5.0 2.0 25.0 24.5 2 19.3 2.0 2.0 4.0 0.75 2 3 3.3 1 5.45 5.45 2.0 GTB20N 60L2 LOT No. 1 0.9 1: Gate 2: Collector 3: Emitter 3 TO-3PF-3L Semiconductor Components Industries, LLC, 2013 August, 2013 80713 TKIM TC-00002942 No.A2196-1/8 NGTB20N60L2TF1G Continued from preceding page. Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Conditions Ratings Unit 175 °C - 55 to +175 °C Electrical Characteristics at Ta = 25°C, Unless otherwise specified Ratings Parameter Symbol Conditions Unit min Collector to Emitter Breakdown Voltage V(BR)CES IC=500μA, VGE=0V VCE=600V, VGE=0V Collector to Emitter Cut off Current ICES Gate to Emitter Leakage Current IGES VGE=±20V, VCE =0V Gate to Emitter Threshold Voltage VGE(th) VCE =20V, IC=250μA Collector to Emitter Saturation Voltage VCE (sat) Diode Forward Voltage VF Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance typ max 600 V Tc=25°C Tc=150°C VGE=15V, IC=20A 4.5 10 μA 1 mA ±100 nA 6.5 V 1.65 V Tc=25°C 1.45 Tc=150°C 1.8 V 1.5 V 2000 pF IF=20A 60 pF Cres 50 pF Turn-ON Delay Time td(on) 60 ns Rise Time tr Turn-ON Time ton Turn-OFF Delay Time td(off) Fall Time tf 67 ns Turn-OFF Time toff 281 ns Total Gate Charge Qg 84 nC Gate to Emitter Charge Qge Gate to Collector “Miller” Charge Qgc Diode Reverse Recovery Time trr VCE =20V,f=1MHz VCC=300V,IC=20A RG=30Ω,L=200μH VGE=0V/15V, Vclamp=400V See Fig.1, Fig.2 VCE =300V, VGE=15V, IC=20A IF=10A , di/dt=100A/μs, VCC=50V See Fig.3 37 ns 400 ns 193 ns 16 nC 37 nC 70 ns Thermal Characteristics at Ta = 25°C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit °C /W Thermal Resistance IGBT (junction- case) Rth(j-c)(IGBT) Tc=25°C (our ideal heat dissipation condition)*2 2.33 Thermal Resistance Diode (junction- case) Rth(j-c)(Diode) Tc=25°C (our ideal heat dissipation condition)*2 2.36 °C /W Thermal Resistance (junction- atmosphere) Rth(j-a) 47.5 °C /W No.A2196-2/8 NGTB20N60L2TF1G Fig.1 Switching Time Test Circuit Fig.2 Timing Chart Clamp Di VGE 90% 10% 0 200μH DUT IC 90% VCC RG 0 NGTB20N60L2TF1G VCE 90% 10% 10% tf td(off) toff 10% 10% tr td(on) ton IT16383 Fig.3 Reverse Recovery Time Test Circuit DUT NGTB20N60L2TF1G 500μH VCC Driver IGBT No.A2196-3/8 NGTB20N60L2TF1G No.A2196-4/8 NGTB20N60L2TF1G No.A2196-5/8 NGTB20N60L2TF1G No.A2196-6/8 NGTB20N60L2TF1G Outline Drawing NGTB20N60L2TF1G Mass (g) Unit 5.5 mm * For reference No.A2196-7/8 NGTB20N60L2TF1G ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.A2196-8/8