TIG110BF Ordering number : EN9013A SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG110BF High Power High Speed Switching Applications Features • • • Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25°C, Unless otherwise specified Parameter Symbol Collector-to-Emitter Voltage Conditions Ratings VCES VGES Gate-to-Emitter Voltage ICc*1 Collector Current (DC) Collector Current (Pulse) Limited by Tjmax @Tc=25°C*3 IC*2 Limited by Tjmax ICP Pulse width Limited by Tjmax Allowable Power Dissipation PD Junction Temperature Tj Storage Temperature Tstg @Tc=100°C*3 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 Unit 600 V ±30 V 27 A 14 A 6 A 108 A 2 W 30 W 150 °C -55 to +150 °C Note : *1 Shows chip capability *2 Collector current is calculated from the following for mula Tjmax - TC IC(TC)= Rth(j-c)×VCE(sat)max.(Tjmax, IC(TC)) *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. Package Dimensions Product & Package Information unit : mm (typ) 7509-005 • Package : TO-220FI(LS) • JEITA, JEDEC : SC-67, SOT-186A, TO-220F • Minimum Packing Quantity : 100 pcs./bag, 50 pcs./magazine 4.5 10.0 2.8 Marking Electrical Connection 7.2 3.5 3.2 TIG110 0.6 16.1 16.0 2 LOT No. 1.2 14.0 3.6 0.9 1.2 0.75 2.4 1 2 3 2.55 2.55 1 0.7 1 : Gate 2 : Collector 3 : Emitter 3 SANYO : TO-220FI(LS) http://semicon.sanyo.com/en/network 91411 TKIM TC-00002643/61511QJ TKIM TC-00002612 No.9013-1/5 TIG110BF Electrical Characteristics at Tj=25°C, Unless otherwise specified Parameter Symbol Collector-to-Emitter Breakdown Voltage V(BR)CES VCE=600V, VGE=0V Gate-to-Emitter Leakage Current IGES VGE(off) VGE=±30V, VCE=0V VGE=15V, IC=15A VCE(sat)2 VGE=15V, IC=40A Unit max V Tj=25°C 100 μA Tj=125°C 1 mA ±100 nA 5.0 6.0 V Tj=25°C 1.6 2.0 V Tj=125°C 1.75 Tj=25°C 2.2 V 2880 pF VCE=10V, IC=1mA VCE(sat)1 typ 600 ICES Collector-to-Emitter Saturation Voltage min IC=1mA, VGE=0V Collector-to-Emitter Cutoff Current Gate-to-Emitter Threshold Voltage Ratings Conditions 4.0 V Input Capacitance Cies Output Capacitance Coes 45 pF Reverse Transfer Capacitance Cres 38 pF Turn-ON Delay Time 65 ns Rise Time td(on) tr Turn-ON Time ton Turn-OFF Delay Time td(off) tf Fall Time Turn-OFF Time Total Gate Charge toff Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VCE=30V, f=1MHz 30 ns L=200μH, VGE=15V, IC=15A, VCC=300V, 300 ns Rg=30Ω, See specified Test Circuit. 250 ns 120 ns 450 ns 95 nC 20 nC 30 nC VCE=300V, VGE=15V, IC=15A Thermal Characteristics at Ta=25°C, Unless otherwise specified Parameter Symbol Thermal Resistance (Junction- Case) Rth(j-c) Thermal Resistance (Junction- at mosphere) Rth(j-a) Ratings Conditions min Tc=25°C (SANYO’s ideal heat dissipation condition)*3 typ max Unit 4.17 °C / W 62.5 °C / W Switching Time Test Circuit L 15V 0V VGE Diode VCC RG TIG110BF VCLAMP=600V Timing Chart VGE 90% 10% 0 IC 90% 0 VCE 90% 10% 10% tf td(off) toff 10% 10% tr td(on) ton IT16383 No.9013-2/5 TIG110BF 60 50 40 30 8V 20 10 15V V Tj=25°C 18V 80 70 V GE = 10V Collector Current, IC -- A 70 12 12V V 15V 80 90 VG E=18 60 50 40 30 8V 20 10 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Collector-to-Emitter Voltage, VCE -- V 1.5 2.0 V 3.0 3.5 4.0 8V 20 10 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Collector-to-Emitter Voltage, VCE -- V VCE -- VGE 3 IC=54A 27A 14A 2 1 5 7 9 11 13 VCE -- VGE 5 27A 14A 1 5 7 9 11 13 Gate-to-Emitter Voltage, VGE -- V 15 IT16390 --40 Tj= 25 7 8 9 10 11 Tj=25°C 3 IC=54A 27A 14A 2 1 5 7 9 11 13 Gate-to-Emitter Voltage, VGE -- V 10000 7 5 IC=54A 6 VCE -- VGE IT16388 4 2 5 4 0 15 Tj=125°C 3 4 5 Collector-to-Emitter Voltage, VCE -- V 4 3 Gate-to-Emitter Threshold Voltage, VGE(off) -- V IT16387 IT16386 Tj= --40°C Gate-to-Emitter Voltage, VGE -- V Collector-to-Emitter Voltage, VCE -- V 20 0 5.0 Switching Time, toff, td(off), tf -- ns Collector-to-Emitter Voltage, VCE -- V 5 0 30 10 0 0.5 0 40 °C 30 50 --40 40 60 °C 50 70 °C 60 80 Tj =1 25 Collector Current, IC -- A 70 5.0 IT16385 IC -- VGE(off) 12 V =1 8 10V V GE Collector Current, IC -- A 80 4.5 VCE=10V 90 V 15 2.5 Collector-to-Emitter Voltage, VCE -- V 100 Tj=125°C 90 1.0 IT16384 IC -- VCE 100 0 0.5 5.0 25 °C 1.0 °C 0 0.5 125 °C Collector Current, IC -- A 90 IC -- VCE 100 Tj= --40°C 10 V IC -- VCE 100 3 2 1000 7 5 15 IT16389 toff, td(off), tf -- RG VCC=300V VClamp=600V L=200μH VGE=15V IC=15A t off ) off t d( 3 2 tf 100 7 5 3 2 10 1.0 2 3 5 7 10 2 3 5 7 100 Gate Resistance, RG -- Ω 2 3 5 7 1000 IT16391 No.9013-3/5 TIG110BF toff, td(off), tf -- IC tof f 5 3 td (off) 2 tf 100 1.0 2 3 5 7 2 10 3 5 Collector Current, IC -- A ton, td(on), tr -- IC 1000 Switching Time, ton, td(on), tr -- ns 7 5 t on 3 2 t d(on) 7 5 tr 3 2 3 5 7 2 10 3 5 Collector Current, IC -- A VGE -- Qg 3 20 40 60 80 Total Gate Charge, Qg -- nC IC -- Tc 50 75 100 125 2 2 3 5 7 10 150 Case Temperature, Tc -- °C 175 200 IT16590 2 3 5 7 100 2 3 5 7 1000 IT16393 Cies, Coes, Cres -- VCE f=1MHz Cies 1000 7 5 3 2 100 7 5 3 2 Coes Cres 10 7 5 3 2 0 5 10 15 20 25 30 IT16395 PD -- Tc 30 25 20 15 10 5 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 1000 7 5 3 2 5 25 3 IT16396 10 0 tr 5 0 100 15 14 0 7 Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A 20 o t d( 35 6 0 n) 100 IT16394 9 0 t on 100 1.0 7 VCC=300V IC=15A VGE=15V 12 2 10000 7 5 3 2 Allowable Power Dissipation, PD -- W Gate-to-Emitter Voltage, VGE -- V 15 3 Gate Resistance, RG -- Ω 2 10 1.0 Collector Current, IC(DC) -- A 100 IT16392 100 5 10 1.0 7 VCC=300V VClamp=600V L=200μH VGE=15V RG=30Ω VCC=300V VClamp=600V L=200μH VGE=15V IC=15A 7 Switching Time, ton, td(on), tr -- ns 7 ton, td(on), tr -- RG 1000 VCC=300V VClamp=600V L=200μH VGE=15V RG=30Ω Cies, Coes, Cres -- pF Switching Time, toff, td(off), tf -- ns 1000 Forward Bias A S O 100 7 5 3 2 160 IT16589 P T= 1m 500 μs 10 s ms 10 7 5 3 2 1.0 7 5 3 2 DC 0.1 7 5 3 Tc=25°C 2 Single pulse 0.01 2 3 5 7 10 1.0 2 10 0m op s era tio n 3 5 7 100 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 1000 IT16591 No.9013-4/5 TIG110BF Reverse Bias A S O 1000 7 5 Collector Current, IC -- A 3 2 100 7 5 3 2 10 7 5 3 2 Tc=25°C VCC=300V L=500μH VGE=15V 1.0 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 1000 IT16400 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2011. Specifications and information herein are subject to change without notice. PS No.9013-5/5