Power MOSFET, 35V, 25mOhm, 11A, Single N

Ordering number : ENA1624B
SFT1431
Power MOSFET
http://onsemi.com
35V, 25mΩ,11A, Single N-Channel
Features
Electrical Connection
• Low On-Resistance
• High Speed Switching
• Low Gate Charge
N-Channel
• ESD Diode-Protected Gate
• Pb-free and RoHS Compliance
2,4
Specifications
1
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
35
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
11
A
IDP
44
A
Drain Current
PW≤10μs, duty cycle≤1%
Power Dissipation
Tc=25°C
1.0
W
15
W
150
°C
−55 to +150
°C
PD
Junction Temperature
Tj
Storage Temperature
Tstg
3
Packing Type:TL
Marking
T1431
LOT No.
TL
4
4
Thermal Resistance Ratings
Parameter
Junction to Case Steady State
Junction to Ambient *
1
Symbol
Value
1
Unit
RθJC
8.33
RθJA
125
°C/W
1
2
3
IPAK(TP)
2
3
DPAK(TP-FA)
Note : *1 Insertion mounted
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
Semiconductor Components Industries, LLC, 2014
September, 2014
91014 TKIM TC-00003150/60612 TKIM/D0209PA TKIM TC-00002143 No.A1624-1/6
SFT1431
Electrical Characteristics at Ta = 25°C
Value
Parameter
Symbol
Conditions
Unit
min
Drain to Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=35V, VGS=0V
Gate to Source Leakage Current
IGSS
VGS=±16V, VDS=0V
typ
max
35
V
μA
±10
μA
2.6
V
Gate Threshold Voltage
VGS(th)
VDS=10V, ID=1mA
Forward Transconductance
gFS
VDS=10V, ID=5.5A
5
RDS(on)1
ID=5.5A, VGS=10V
19
25
mΩ
RDS(on)2
ID=3A, VGS=4.5V
28
39.5
mΩ
RDS(on)3
ID=3A, VGS=4V
35
49
mΩ
Static Drain to Source On-State Resistance
1.2
1
S
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
12
ns
Rise Time
tr
40
ns
Turn-OFF Delay Time
td(off)
60
ns
Fall Time
tf
36
ns
Total Gate Charge
Qg
17.3
nC
Gate to Source Charge
Qgs
3.2
nC
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
VDS=20V, f=1MHz
960
pF
130
pF
84
pF
See specified Test Circuit.
VDS=20V, VGS=10V, ID=11A
3.6
IS=11A, VGS=0V
0.88
nC
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
10V
0V
VDD=15V
VIN
ID=5.5A
RL=2.7Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
P.G
50Ω
SFT1431
S
No.A1624-2/6
SFT1431
No.A1624-3/6
SFT1431
No.A1624-4/6
SFT1431
Package Dimensions
SFT1431-TL-E/ SFT1431-TL-W
DPAK/TP-FA
unit : mm
4
1
2
3
1:Gate
2:Drain
3:Source
4:Drain
Recommended
Soldering Footprint
7.0
7.0
2.5
2.0
1.5
2.3
2.3
No.A1624-5/6
SFT1431
Package Dimensions
SFT1431-E/ SFT1431-W
IPAK/TP
Unit : mm
4
1
2
3
1:Gate
2:Drain
3:Source
4:Drain
Ordering & Package Information
Device
SFT1431-E
SFT1431-W
SFT1431-TL-E
SFT1431-TL-W
Package
Shipping
IPAK(TP)
SC-64,TO-251
500pcs. / bag
DPAK(TP-FA)
SC-63,TO-252
700pcs. / reel
Note
Pb-Free
Pb-Free and Halogen Free
Pb-Free
Pb-Free and Halogen Free
Note on usage : Since the SFT1431 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
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directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
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applicable copyright laws and is not for resale in any manner.
PS No.A1624-6/6