ECH8315 Power MOSFET –30V, 25mΩ, –7.5A, Single P

ECH8315
Power MOSFET
–30V, 25mΩ, –7.5A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to low on resistance. This devices
is suitable for applications with low on resistance requirements.
Features
 Low On-Resistance
 4V drive
 ESD Diode-Protected Gate
 Pb-Free, Halogen Free and RoHS compliance
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VDSS
RDS(on) Max
25mΩ@ 10V
ID Max
30V
44mΩ@ 4.5V
7.5A
49mΩ@ 4V
Typical Applications
 Load Switch
 Protection Switch for Lithium-ion Battery
 Motor Driver
ELECTRICAL CONNECTION
P-Channel
8
7
6
5
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Unit
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
20
V
Drain Current (DC)
ID
7.5
A
Drain Current (Pulse)
PW  10s, duty cycle  1%
IDP
40
A
Power Dissipation
When mounted on ceramic substrate
2
(900mm  0.8mm)
PD
1.5
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
55 to +150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
1
2
3
PACKING TYPE : TL
4
MARKING
JS
Lot No.
TL
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
2
(900mm  0.8mm)
Symbol
RJA
© Semiconductor Components Industries, LLC, 2015
April 2015 - Rev. 2
Value
83.3
1
Unit
C/W
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
Publication Order Number :
ECH8315/D
ECH8315
ELECTRICAL CHARACTERISTICS at Ta  25C (Note 2)
Parameter
Symbol
Drain to Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
IGSS
VGS(th)
gFS
Gate Threshold Voltage
Forward Transconductance
Conditions
Value
min
typ
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=16V, VDS=0V
30
VDS=10V, ID=1mA
1.2
VDS=10V, ID=3.5A
5
max
Unit
V
1
A
10
A
2.6
V
8.4
S
RDS(on)1
RDS(on)2
ID=3.5A, VGS=10V
19
25
m
ID=2A, VGS=4.5V
31
44
m
RDS(on)3
Ciss
ID=2A, VGS=4V
35
49
m
Output Capacitance
Coss
VDS=10V, f=1MHz
200
pF
Reverse Transfer Capacitance
Crss
150
pF
Turn-ON Delay Time
Static Drain to Source On-State
Resistance
Input Capacitance
875
pF
td(on)
8.1
ns
Rise Time
tr
33
ns
Turn-OFF Delay Time
td(off)
92
ns
Fall Time
tf
60
ns
Total Gate Charge
Qg
18
nC
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
See specified Test Circuit
VDS=15V, VGS=10V, ID=7.5A
2.1
nC
4.7
nC
VSD
Forward Diode Voltage
IS=7.5A, VGS=0V
0.82
1.2
V
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
0V
--10V
VDD= --15V
VIN
ID= --3.5A
RL=4.3
VIN
D
VOUT
PW=10s
D.C.≤1%
G
ECH8315
P.G
50
S
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2
ECH8315
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3
ECH8315
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4
ECH8315
PACKAGE DIMENSIONS
unit : mm
SOT-28FL / ECH8
CASE 318BF
ISSUE O
to
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
Recommended
Soldering Footprint
7 : Drain
8 : Drain
2.8
0.6
0.4
0.65
ORDERING INFORMATION
Device
Marking
Package
Shipping (Qty / Packing)
JS
SOT-28FL / ECH8
(Pb-Free / Halogen Free)
3,000 / Tape & Reel
ECH8315-TL-H
ECH8315-TL-W
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the ECH8315 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
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nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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