HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 (Previous ADE-208-1439A) Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor 2SC5757 Outline RENESAS Package code: PXSF0006LA-A (Package name: EMFPAK-6) Pin Arrangement 6 5 B1 6 4 2 3 C1 1 Marking is “F”. Rev.2.00 Aug 10, 2005 page 1 of 8 B2 4 Q2 Q1 1 Note: E2 5 E1 2 C2 3 1. Collector Q1 2. Emitter Q1 3. Collector Q2 4. Base Q2 5. Emitter Q2 6. Base Q1 HTT1115E Absolute Maximum Ratings (Ta = 25°C) Item Ratings Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector power dissipation PC Junction temperature Tj Storage temperature Tstg Note: Value on PCB. (FR–4 (13 x 13 x 0.635 mm)). Q1 Q2 15 4 1.5 50 10 3.5 1.5 80 Unit V V V mA mW °C °C Total 200* 150 150 –55 to +150 –50 to +150 Electrical Characteristics (Q1) (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 15 Typ ⎯ Max ⎯ Unit V Test conditions IC = 10 µA, IE = 0 Collector cutoff current Collector cutoff current ICBO ICEO ⎯ ⎯ ⎯ ⎯ 0.1 1 µA µA VCB = 15 V, IE = 0 VCE = 4 V, RBE = infinite Emitter cutoff current DC current transfer ratio Reverse transfer capacitance IEBO hFE Cre ⎯ 100 ⎯ ⎯ 130 0.3 0.2 170 0.45 µA ⎯ pF VEB = 0.8 V, IC = 0 VCE = 1 V, IC = 5 mA fT |S21|2 NF 10 13 ⎯ 12 16 1.0 ⎯ ⎯ 2.0 GHz dB dB Symbol V(BR)CBO ICBO ICEO IEBO hFE Cre Min 10 ⎯ ⎯ ⎯ 80 ⎯ Typ ⎯ ⎯ ⎯ ⎯ 100 0.8 Max ⎯ 0.6 0.2 0.1 130 1.1 Unit V µA µA µA ⎯ pF fT |S21|2 NF 4 7 ⎯ 6 10 1.5 ⎯ ⎯ 2.3 GHz dB dB Gain bandwidth product Forward transfer coefficient Noise figure VCB = 1 V, f = 1 MHz Emitter ground VCE = 1 V, IC = 5 mA, f = 1 GHz VCE = 1 V, IC = 5 mA, f = 900 MHz, ΓS = ΓL = 50 Ω Electrical Characteristics (Q2) (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance Gain bandwidth product Forward transfer coefficient Noise figure Rev.2.00 Aug 10, 2005 page 2 of 8 Test conditions IC = 10 µA, IE = 0 VCB = 10 V, IE = 0 VCE = 3.5 V, RBE = infinite VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, f = 1 MHz Emitter ground VCE = 1 V, IC = 5 mA, f = 1 GHz VCE = 1 V, IC = 5 mA, f = 900 MHz ΓS = ΓL = 50 Ω HTT1115E Main Characteristics (Q1) Typical Forward Transfer Characteristics Typical Output Characteristics 450 µA 0µ VCE = 1 V Collector Current IC (mA) 350 µA 50 Collector Current IC (mA) 40 50 400 µA A 50 300 µA 250 µA 30 200 µA 150 µA 20 100 µA IB = 50 µA 10 0 1 2 3 40 30 20 10 0 4 0.2 Collector to Emitter Voltage VCE (V) 0 5 10 20 50 100 1.0 0.5 IE = 0 f = 1 MHz 0.4 0.3 0.2 0.1 0 0.4 1.2 0.8 1.6 2.0 Collector Current IC (mA) Collector to Base Voltage VCB (V) Gain Bandwidth Product vs. Collector Current S21 Parameter vs. Collector Current 20 20 f = 1 GHz VCE = 2 V S21 Parameter |S21|2 (dB) Gain Bandwidth Product fT (GHz) 2 Reverse Transfer Capacitance Cre (pF) DC Current Transfer Ratio hFE =1V 100 1 0.8 Reverse Transfer Capacitance vs. Collector to Base Voltage 200 CE 0.6 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio vs. Collector Current V 0.4 16 12 8 4 VCE = 1 V VCE = 2 V 16 12 8 VCE = 1V 4 f = 900 MHz 0 0 1 2 5 10 20 50 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 8 100 1 2 5 10 20 50 Collector Current IC (mA) 100 HTT1115E Noise Figure vs. Collector Current Noise Figure NF (dB) 5 f = 900 MHz 4 VCE = 1 V 3 2 VCE = 2 V 1 0 1 2 5 10 20 50 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 4 of 8 100 HTT1115E Main Characteristics (Q2) 500 450 µA 400 50 µA 3 A 50 µ 300 40 µA µA 250 30 200 µ A 150 µ A 20 100 µA IB = 50 µA 10 0 2.0 0.5 1.0 1.5 2.5 3.0 3.5 DC Current Transfer Ratio hFE 40 30 20 10 0.2 0.4 0.6 0.8 1.0 Collector to Emitter Voltage VCE (V) Base to Emitter Voltage VBE (V) DC Current Transfer Ratio vs. Collector Current Reverse Transfer Capacitance vs. Collector to Base Voltage 200 VCE = 1 V 100 0 1 2 5 10 20 50 100 1.6 IE = 0 f = 1 MHz 1.4 1.2 1.0 0.8 0.6 0 0.4 0.8 1.2 1.6 2.0 Collector to Base Voltage VCB (V) Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current S21 Parameter vs. Collector Current 20 20 f = 1 GHz f = 900 MHz 16 VCE = 2 V 12 VCE = 1 V 8 4 S21 Parameter |S21|2 (dB) Gain Bandwidth Product fT (GHz) VCE = 1 V 0 Reverse Transfer Capacitance Cre (pF) Collector Current IC (mA) 50 Typical Forward Transfer Characteristics Collector Current IC (mA) µA Typical Output Characteristics 16 VCE = 2V 12 VCE = 1V 8 4 0 0 1 2 5 10 20 50 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 5 of 8 100 1 2 5 10 20 50 Collector Current IC (mA) 100 HTT1115E Noise Figure vs. Collector Current Noise Figure NF (dB) 5 f = 900 MHz 4 3 VCE = 1 V 2 VCE = 2 V 1 0 1 2 5 10 20 50 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 6 of 8 100 HTT1115E Main Characteristics (Common) Collector Power Dissipation Pc* (mW) Collector Power Dissipation Curve 250 *: Value on PCB. (FR–4 (13 x13 x0.635 mm)) 2 devices total 200 150 100 50 0 50 100 150 Ambient temperature Ta (°C) Rev.2.00 Aug 10, 2005 page 7 of 8 200 HTT1115E Package Dimensions JEITA Package Code RENESAS Code ¾ PXSF0006LA-A D Package Name MASS[Typ.] EMFPAK-6 / EMFPAK-6V 0.0012g A e c E A LP HE A L x M S b A e A2 A A1 y S Reference Symbol e1 S b I1 b1 c1 c b2 A-A Section Pattern of terminal position areas A A1 A2 b b1 c c1 D E e HE L LP x y b2 e1 I1 Dimension in Millimeters Min 0.45 0 0.45 0.1 0.1 1.15 0.75 0.95 0.05 0.1 Nom 0.17 0.15 0.13 0.11 1.2 0.8 0.4 1.0 0.1 Max 0.5 0.01 0.49 0.25 0.15 1.25 0.85 1.05 0.15 0.3 0.05 0.05 0.3 0.7 0.35 Ordering Information Part Name HTT1115EFTL-E Quantity 5000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 8 of 8 Sales Strategic Planning Div. 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