SHANGHAI SEMITECH August 2005 SEMICONDUCTOR CO., LTD. ESDAXXWX Transil array for data protection General Description Features 2 up to 5 Unidirectional Transil functions The ESDAxxWx are monolithic suppressors designed to protect components connected to data and transmission lines against ESD. These devices clamp the voltage just above the logic level supply for positive transients, and to a diode drop below ground for negative transients. Breakdown voltage: VBR = 6.1 V min. and 25 V min. Low leakage current: < 1 uA Very small PCB area < 4.2 mm2 typically High ESD protection level: up to 25 kV High integration Applications Complies with the following standards Computers IEC61000-4-2 Printers Level 4 15 kV (air discharge) 8 kV(contact discharge) Communication systems Cellular phones handsets and accessories MIL STD 883E - Method 3015-7 Class 3 25 kV HBM (Human Body Model) Wireline and wireless telephone sets Set top boxes Functional diagram ESDA25W ESDA6V1W5/ESDA25W5 ESD6V1-5W6 Absolute Ratings (Tamb=25°C ) Symbol PPP Parameter Peak Pulse Power (tp = 8/20μs) Value SDA25W 400 ESDA25W5/ESDA6V1W5 150 ESDA6V1-5W6 100 Units W TL Maximum lead temperature for soldering during 10s 260 °C Tstg Storage Temperature Range -40 to +125 °C Top Operating Temperature Range -40 to +125 °C ESDAXXWX Electrical Parameter Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current IPP Peak pulse current IR Reverse current IF Forward current αT Voltage temperature coefficient VF Forward voltage drop C Capacitance Rd Dynamic Electrical Characteristics Part Numbers VBR VF IR VRM IRM Rd αT C Typ.(1) Max.(2) Typ. 0v bias Min. Max. v v mA v µA v mA Ω 10-4/°C pF ESDA6V1W5 6.1 7.2 1 3 1 1.25 200 0.35 6 90 ESDA6V-5W6 6.1 7.2 1 3 1 1.25 200 0.61 6 50 ESDA25W 25 30 1 24 1 1.2 10 1.9 10 30 ESDA25W5 25 30 1 24 1 1.2 10 1.1 10 65 1.Square pulse IPP=15A,tp=2.5µs Max. IF 2.VBR=aT*(Tamb-25°C)*VBR(25°C) Typical Characteristics Fig1.Peak pulse power versus exponential Pulse duration (Tj initial=25°C) ShangHai Semitech Semiconductor Co., Ltd. Fig2. Clamping voltage versus peak pulse current(Tj initial=25°C, rectangular Waveform,tp=2.5μs) 2. ESDAXXWX Fig3. Capacitance versus reverse Applied voltage Fig4. Peak forward voltage drop versus forward current Fig5.Relative variation of leakage current Versus junction temperature Package mechanical data SOT-323-3L Package ShangHai Semitech Semiconductor Co., Ltd. 3. ESDAXXWX SOT-323-5L Package SOT-323-6L Package ShangHai Semitech Semiconductor Co., Ltd. 4.