BT 136 - SemiHow

BT136- 600
VDRM = 600 V
IT(RMS) = 4 A
ITSM = 33 A
IGT = 5mA/12mA
BT136-600
4 Quadrants Sensitive TRIAC
Symbol
FEATURES
 Repetitive Peak Off-State Voltage : 600V
 R.M.S On–State Current (IT(RMS) = 4A)
 Sensitive Gate Trigger Current
- 5[mA] of IGT at I, II and III Quadrants.
- 12[mA] of IGT at IV Quadrant.
TO-220
Applications
Heating control, Lighting control, Motor control such like dimmer,
sensor light, Humidifier, etc.
T1
T2
G
General Description
Semihow’s sensitive TRIAC product is a glass passivated device,
has a low gate trigger current, high stability in gate trigger current to
variation of operating temperature and high off state voltage. It is
generally suitable for power and phase control in ac application.
Absolute Maximum Ratings
(TJ=25℃ unless otherwise specified )
Symbol
Parameter
VDRM
Repetitive Peak Off-State Voltage
VRRM
Repetitive Peak Reverse Voltage
IT(AV)
Average On-State Current
IT(RMS)
R.M.S. On-State Current
ITSM
Surge On-State Current
½ cycle, 50Hz/60Hz, Sine wave,
Non repetitive
Fusing Current
t = 10ms
Forward Peak Gate Power
Dissipation
TJ = 125 °C
Forward Average Gate Power
Dissipation
TJ = 125 °C, over any 20ms
IFGM
Forward Peak Gate Current
VRGM
Reverse Peak Gate Voltage
I2t
PGM
PG(AV)
TJ
TSTG
Conditions
Ratings
Unit
600
V
600
V
3.6
A
4
A
30/33
A
4.5
A2S
2
W
0.2
W
TJ = 125 °C, pulse width ≤ 20us
1
A
TJ = 125 °C, pulse width ≤ 20us
6
V
Operating Junction Temperature
-40~+125
oC
Storage Temperature
-40~+150
oC
Sine wave, 50/60Hz, Gate open
Full sine wave, TC = 109.5oC
◎ SEMIHOW REV.A1,March 2013
(TJ=25℃ unless otherwise specified )
Symbol
Parameter
IDRM
Repetitive Peak Off-State Current
IRRM
Repetitive Peak Reverse Current
IGT
Gate Trigger Current
VGT
Gate Trigger Voltage
Voltage1
Conditions
VD = VDRM
VD = VDRM
Min
Typ
Max
Unit
TJ=25oC
-
-
50
uA
TJ=125oC
-
-
5
mA
TJ=25oC
-
-
50
uA
TJ
=125oC
-
-
5
mA
1+, 1-, 3-
-
-
5
mA
3+
-
-
12
mA
1+, 1-, 3-
-
-
1.5
V
3+
-
-
2.0
V
=125oC
0.2
-
-
V
-
-
1.6
V
10
-
-
V/us
-
5
-
mA
Min
Typ
Max
Unit
VD = 12V, RL=330Ω
VD = 12V, RL=330Ω
VGD
Non-Trigger Gate
VTM
Peak On-State Voltage
IT = 5.6A, IG = 20mA
dv/dt
Critical Rate of Rise of Off-State
Voltage
VD = 2/3 VDRM, TJ=125oC
Holding current
IT= 0.2A
IH
VD = 12V, RL=330Ω, TJ
Notes :
1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1%
Thermal Characteristics
Symbol
Parameter
Conditions
RθJC
Thermal Resistance
Junction to Case
3.6
oC/W
RθJA
Thermal Resistance
Junction to Ambient
80
oC/W
◎ SEMIHOW REV.A1,March 2013
BT136- 600
Electrical Characteristics
BT136- 600
Typical Characteristics
Maximum allowable case temperature, TC [oC]
5
o
180
150o
Power dissipation, PD [W]
4
120o
3
90o
2
60o
1
o
30
0
0
1
2
3
4
5
130
125
30o
60o
120
90o
115
120o
150o
180o
110
105
100
0
1
R.M.S. on state current, IT(RMS) [A]
2
3
4
5
R.M.S. on state current, IT(RMS) [A]
Fig 1. R.M.S. current vs. Power dissipation
Fig 2. R.M.S. current vs. Case temperature
101
40
Gate voltage, VG [V]
Surge on state current, ITSM [A]
35
PGM(2W)
25[oC]
I+GT3
PG(AV)(0.2W)
100
o
25[ C]
I+GT1
I-GT1
I-GT3
101
102
25
60Hz
20
50Hz
15
10
5
VGD
10-1
100
30
103
0
100
104
Fig 4. Surge on state current rating
(Non-repetitive)
2.5
2.5
2.0
2.0
VGT(toC)
X 100(%)
VGT(25oC)
IGT(25oC)
IGT(toC)
X 100(%)
Fig 3. Gate power characteristics
1.5
+
I GT1
I-GT1
I-GT3
1.0
I+GT3
0.5
0.0
-50
-25
0
25
50
102
101
Time[cycles]
Gate current, IG [mA]
1.5
V+GT1
V-GT1
V+GT3
V-GT3
1.0
0.5
75
100
125
150
o
Junction Temperature, TJ[ C]
Fig 5. Gate trigger current vs.
junction temperature
0.0
-50
-25
0
25
50
75
100
125
150
Junction temperature, TJ[oC]
Fig 6. Gate trigger voltage vs.
junction temperature
◎ SEMIHOW REV.A1,March 2013
BT136- 600
Typical Characteristics
103
Thermal impedance [oC/W]
Instantaneous on state current, IT [A]
102
25oC
125oC
1
10
100
RS=0.078Ω
VTO=0.85V
10-1
0
1
2
3
4
5
102
101
100
10-2
10-1
Instantaneous on state voltage, VT [V]
100
101
Pulse Time [sec]
Fig 7. Instantaneous on state current vs.
Instantaneous on state voltage
Fig 8. Thermal Impedance vs. pulse time
Measurement of gate trigger current
RL
RL
RG
VG
(1) Quadrant I
VDD
RG
VG
(2) Quadrant II
RL
VDD
RG
VG
(3) Quadrant III
RL
VDD
VDD
RG
VG
(4) Quadrant IV
Note. Whole parameter and test condition can not be over absolute maximum ratings in this datasheet.
◎ SEMIHOW REV.A1,March 2013
BT136- 600
Package Dimension
TO-220 (A)
9.90±0.20
0.
0±
.6
20
4.50±0.20
6.50±0.20
9.19±0.20
2.80±0.20
1.27±0.20
1.52±0.20
1.30±0.20
2.40±0.20
3.02±0.20
13.08±0.20
15.70±0.20
φ3
0.80±0.20
2.54typ
2.54typ
0.50±0.20
◎ SEMIHOW REV.A1,March 2013
BT136- 600
Package Dimension
TO-220 (B)
±0.20
84
4.57±0.20
6.30±0.20
1.27±0.20
9.14±0.20
2.74±0.20
15.44±0.20
.
φ3
0
.2
±0
1.27±0.20
2.67±0.20
13.28±0.20
2.67±0.20
0.81±0.20
2.54typ
2.54typ
0.40±0.20
◎ SEMIHOW REV.A1,March 2013