CMPDM303NH SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM303NH is a High Current N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Voltage, and Low Leakage Current. MARKING CODE: 303C SOT-23F CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment FEATURES: • Low rDS(ON) (0.078Ω MAX @ VGS=2.5V) • High current (ID=3.6A) • Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage SYMBOL VDS 30 UNITS V VGS ID 12 V 3.6 A IDM PD 14.4 A 350 mW TJ, Tstg ΘJA -55 to +150 °C 357 °C/W Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=12V, VDS=0 IDSS BVDSS VGS(th) rDS(ON) rDS(ON) gFS Crss Ciss Coss Qg(tot) Qgs Qgd ton toff VDS=20V, VGS=0 VGS=0, ID=250μA VGS=VDS, VGS=4.5V, MAX 10 UNITS μA 1.0 μA 30 ID=250μA V 0.6 ID=1.8A VGS=2.5V, ID=1.8A VDS=5.0V, ID=3.6A 1.2 V 0.027 0.04 Ω 0.039 0.078 Ω 11.8 S VDS=10V, VGS=0, f=1.0MHz VDS=10V, VGS=0, f=1.0MHz 45 pF 373 pF VDS=10V, VGS=0, f=1.0MHz VDD=10V, VGS=4.5V, ID=3.6A 8.8 13 nC ID=3.6A 0.9 1.4 nC ID=3.6A 1.8 2.7 nC VDD=10V, VDD=10V, VGS=4.5V, VGS=4.5V, VDD=10V, ID=3.6A, RG=10Ω VDD=10V, ID=3.6A, RG=10Ω 68 8.7 29.1 pF ns ns R0 (20-October 2010) CMPDM303NH SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23F CASE - MECHANICAL OUTLINE 2 1 3 PIN CONFIGURATION LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 303C R0 (20-October 2010) w w w. c e n t r a l s e m i . c o m