HFW6N90_HFI6N90

BVDSS = 900 V
RDS(on) typ = 1.95 ȍ
HFW6N90 / HFI6N90
ID = 6.0 A
900V N-Channel MOSFET
D2-PAK
I2-PAK
HFW6N90
HFI6N90
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
1.Gate 2. Drain 3. Source
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 35 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 1.95 ȍ7\S#9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
TC=25୅ unless otherwise specified
Parameter
Value
Units
900
V
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25ఁ͚͑
6.0
A
Drain Current
– Continuous (TC = 100ఁ͚͑
3.8
A
IDM
Drain Current
– Pulsed
24
A
VGS
Gate-Source Voltage
ρ30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
650
mJ
IAR
Avalanche Current
(Note 1)
6.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
16.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TA = 25ଇ) *
3.13
W
Power Dissipation (TC = 25ఁ͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑
167
W
1.33
W/ఁ͑
-55 to +150
ఁ͑
300
ఁ͑
(Note 1)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Typ.
Max.
RșJC
Symbol
Junction-to-Case
Parameter
--
0.75
RșJA
Junction-to-Ambient*
--
40
RșJA
Junction-to-Ambient
--
62.5
Units
ఁ͠Έ͑
* When mounted on the minimum pad size recommended (PCB Mount)
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡
HFW6N90_HFI6N90
March 2013
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ͑
2.5
--
4.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 3.0 A͑
--
1.95
2.4
‫͑ש‬
VGS = 0 V, ID = 250 Ꮃ͑
900
--
--
V
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ͑
--
1.03
--
·͠ఁ͑
VDS = 900 V, VGS = 0 V͑
--
--
1
Ꮃ͑
VDS = 720 V, TC = 125ఁ͑
--
--
10
Ꮃ͑
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ԩBVDSS Breakdown Voltage Temperature
Coefficient
/ԩTJ
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
Ꮂ͑
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
Ꮂ͑
--
1550
2010
Ꮔ͑
--
110
145
Ꮔ͑
--
15
20
Ꮔ͑
--
40
80
Ꭸ͑
--
120
240
Ꭸ͑
--
60
120
Ꭸ͑
--
70
140
Ꭸ͑
--
35
45
Οʹ͑
--
10
--
Οʹ͑
--
13
--
Οʹ͑
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz͑
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 450 V, ID = 6.0 A,
RG = 25 ‫͑ש‬
͑
͙͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑ͿΠΥΖ͚͑ͥͦ͑͝
VDS = 720V, ID = 6.0 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͑͝
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
6.0
ISM
Pulsed Source-Drain Diode Forward Current
--
--
24
VSD
Source-Drain Diode Forward Voltage
IS = 6.0 A, VGS = 0 V
--
--
1.4
V
trr
Reverse Recovery Time
--
780
--
Ꭸ͑
Qrr
Reverse Recovery Charge
IS = 6.0 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
9.0
--
ȝ&
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=34mH, IAS=6.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡
HFW6N90_HFI6N90
Electrical Characteristics TC=25 qC
HFW6N90_HFI6N90
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
ID, Drain Current [A]
0
1
10
ID, Drain Current [A]
1
10
10
-1
10
150oC
o
25 C
o
-55 C
0
10
䈜㻌㻺㼛㼠㼑㼟㻌㻦
ȝ V3XOVH7HVW
2. TC = 25 䉝
-1
-2
10
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VDS = 50V
ȝ V3XOVH7HVW
10
-1
0
10
2
1
10
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
1
4.0
IDR, Reverse Drain Current [A]
RDS(ON)>ȍ @
Drain-Source On-Resistance
4.5
VGS = 10V
3.5
VGS = 20V
3.0
2.5
2.0
䈜㻌㻺㼛㼠㼑㻌㻦㻌㼀J = 25 䉝
1.5
10
0
10
150 䉝
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VGS = 0V
ȝ V3XOVH7HVW
-1
0
3
6
9
12
15
10
18
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12
2500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
1500
1000
Coss
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VGS = 0 V
2. f = 1 MHz
500
Crss
0
-1
10
VDS = 180V
VGS, Gate-Source Voltage [V]
2000
Capacitance [pF]
25䉝
10
VDS = 720V
8
6
4
2
䈜㻌㻺㼛㼠㼑㻌㻦㻌㻵D = 6.0A
0
0
10
VDS = 450V
1
10
0
5
10
15
20
25
30
35
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
40
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡
(continued)
1.2
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HFW6N90_HFI6N90
Typical Characteristics
1.1
1.0
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VGS = 0 V
2. ID ȝ $
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VGS = 10 V
2. ID = 3.0 A
0.5
0.0
-100
200
-50
0
150
200
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
6
2
10
Operation in This Area
is Limited by R DS(on)
10 us
10
ID, Drain Current [A]
100 us
1 ms
1
10 ms
DC
0
10
-1
10
4
2
䈜㻌㻺㼛㼠㼑㼟㻌㻦
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0
25
-2
0
10
1
2
10
3
10
10
50
75
100
125
150
TC, Case Temperature [ 䉝㼉
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
0
10
D=0.5
Zș -&(t), Thermal Response
ID, Drain Current [A]
100
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
10
50
o
o
0.2
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. Zș -&(t) = 0.75 䉝㻛㼃 㻌㻹㼍㼤㻚
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zș -&(t)
-1
10
0.1
0.05
PDM
0.02
0.01
t1
single pulse
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
t2
0
10
1
10
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡
HFW6N90_HFI6N90
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡
HFW6N90_HFI6N90
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡
HFW6N90_HFI6N90
Package Dimension
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡
HFW6N90_HFI6N90
Package Dimension
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡