SPM6M080-010D

SENSITRON
SEMICONDUCTOR
SPM6M080-010D
SPM6M060-025D
TECHNICAL DATA
Datasheet 4118, Rev. F
Three-Phase MOSFET BRIDGE, With Gate Driver and Optical
Isolation
DESCRIPTION: A 100 V/ 80 AMP, 250V/60A THREE PHASE MOSFET BRIDGE
0
(Tj=25 C UNLESS OTHERWISE
ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
SPECIFIED)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
MOSFET SPECIFICATIONS
Drain-to-Source Breakdown Voltage, SPM6M080-010D
BVDSS
, SPM6M060-025D
O
-
-
V
250V
ID = 500 A, VGS = 0V
Continuous Drain Current TC = 25 C,
100
ID
-
-
SPM6M080-010D
A
80
SPM6M060-025D
70
O
TC = 90 C
SPM6M080-010D
60
SPM6M060-025D
Pulsed Drain Current, Pulse Width limited to 1 msec
40
Static Drain-to-Source On Resistance,
O
Tj = 25 C
IDM
-
RDSon
-
SPM6M080-010D
-
200
A

0.004
0.005
0.029
0.033
SPM6M060-025D
ID= 40A, VGS = 15V,
Maximum Thermal Resistance
RJC
-
o
-
C/W
SPM6M080-010D
0.95
SPM6M060-025D
0.55
Maximum operating Junction Temperature
Tjmax
-40
-
150
o
Maximum Storage Junction Temperature
Tjmax
-55
-
150
o
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Page 1
C
C
SENSITRON
SEMICONDUCTOR
SPM6M080-010D
SPM6M060-025D
TECHNICAL DATA
Datasheet 4118, Rev. F
PRODUCT PARAMETERS - (TC=25 oC unless otherwise noted)
Over-Temperature Shutdown
Over-Temperature Shutdown
Tsd
Over-Temperature Output
Tso
100
105
110
C
o
10
Over-Temperature Shutdown Hysteresis
o
10mV/ C
o
20
C
DIODES CHARACTERISTICS
O
Continuous Source Current, TC = 90 C
IS
-
-
A
70
SPM6M080-010D
SPM6M060-025D
40
Diode Forward Voltage, SPM6M080-010D, IS = 60A
VSD
-
1.15
SPM6M060-025D, IS = 40A
V
1.35
Diode Reverse Recovery Time, VDD=50V , di/dt=100 A/s
trr
-
SPM6M080-010D
-
nsec
16
V
70
SPM6M060-025D
290
Gate Driver
Supply Voltage
VCC
14
15
Supply Input Current at Vcc, Pin 19,
Without PWM Switching
35
, with 10KHz PWM at Two Inputs
mA
50
Input On Current
HIN, LIN
2
5.0
mA
Opto-Isolator Logic High Input Threshold
Ith
-
1.6
-
mA
Input Reverse Breakdown Voltage
BVin
5.0
-
-
V
Input Forward Voltage @ Iin = 5mA
VF
-
1.5
1.7
V
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Page 2
SENSITRON
SEMICONDUCTOR
SPM6M080-010D
SPM6M060-025D
TECHNICAL DATA
Datasheet 4118, Rev. F
Under Voltage Lockout
ITRIP Reference Voltage
(1)
VCCUV
9.0
10.0
11.5
V
Itrip-ref
1.57
1.63
1.68
V
700
-
50
-
750
-
60
-
Input-to-Output Turn On Delay
tond
Output Turn On Rise Time
tr
-
toffd
-
tf
-
Input-to-Output Turn Off Delay
Output Turn Off Fall Time
@ VCC=50V, ID=40A, TC = 25
Dead Time Requirement, for Shoot Through Prevention
Opto-Isolator Input-to-Output Isolation Voltage, momentary
-
-
600
750
-
2500
Opto-Isolator Operating Input Common Mode Voltage
Opto-Isolator Operating Input Common Mode Transient
Immunity, with Iin > 5mA
Pin-To-Case Isolation Voltage, DC Voltage
nsec
nsec
-
V
1000
V
10
KV/usec
-
1500
-
V
-
5
-
mOhm
DC Bus Current Sensor
Shunt Resistor Value
-
Current Amplifier Gain, Referenced to Signal Gnd
0.049
Current Amplifier DC Offset (Zero DC Bus Current)
0.010
Current Amplifier Response Time
V/A
0.030
3
V
usec
(1) ITRIP current limit is internally set to 35A peak. The set point can be lowered by connecting a resistor between Itrip-ref
and Gnd. The set point can be increased by connecting a resistor between Itrip-ref and +5V ref. The off time duration is
about 70 usec.
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Page 3
SENSITRON
SEMICONDUCTOR
SPM6M080-010D
SPM6M060-025D
TECHNICAL DATA
Datasheet 4118, Rev. F
+15V
+15V Rtn
(Signal Gnd1)
10
Gnd1
HIN-A
HIN-A
+VDC
LIN-A
PH-A
HIN-A
Rtn
10
LIN-A
LIN-A
Rtn
10
HIN-B
HIN-B
HIN-B
Rtn
10
LIN-B
LIN-B
LIN-B
Rtn
10
PH-B
HIN-C
HIN-C
HIN-C
Rtn
10
LIN-C
LIN-C
LIN-C
Rtn
SD
FLT
2.74K
+5V
2.74K
+5V
2.0K
PH-C
FLT-CLR
+5V-out
31.6K 10K
Over-Current Ref
1nF

1nF
2.74K
Ido (Optional)
0.005
+VDC
Ido (Standard)
Rtn
G=9.8
5V Regulator
+5V
To-SD
10k
Temperature Sensor
TCo
0.1uF
Heat-Sinck
To SD
Gnd1
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Page 4
SENSITRON
SEMICONDUCTOR
SPM6M080-010D
SPM6M060-025D
TECHNICAL DATA
Datasheet 4118, Rev. F
Figure 2 - Package Drawing Top & Side Views
(All dimensions are in inches, tolerance is +/- 0.010”)
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Page 5
SENSITRON
SEMICONDUCTOR
SPM6M080-010D
SPM6M060-025D
TECHNICAL DATA
Datasheet 4118, Rev. F
Figure 3 - Package Pin Locations
(All dimensions are in inches; tolerance is +/- 0.005” unless otherwise specified)
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Page 6
SENSITRON
SEMICONDUCTOR
SPM6M080-010D
SPM6M060-025D
TECHNICAL DATA
Datasheet 4118, Rev. F
PIN OUT
Pin #
Name
Description
1
HinA
Isolated Drive Input for High-side MOSFET of Phase A
2
HinA-Rtn
Return for Input at 1
3
NC
Not Connected
4
LinA
Isolated Drive Input for Low-side MOSFET of Phase A
5
LinA-Rtn
Return for Input at 4
6
NC
Not Connected
7
HinB
Isolated Drive Input for High-side MOSFET of Phase B
8
HinB-Rtn
Return for Input at 7
9
NC
Not Connected
10
LinB
Isolated Drive Input for Low-side MOSFET of Phase B
11
LinB-Rtn
Return for Input at 10
12
HinC
Isolated Drive Input for High-side MOSFET of Phase C
13
HinC-Rtn
Return for Input at 12
14
LinC
Isolated Drive Input for Low-side MOSFET of Phase C
15
LinC-Rtn
Return for Input at 14
16
NC
Not Connected
17
NC
Not Connected
18
NC
19
Vcc
20
+15V Rtn
Not Connected
+15V input biasing supply connection for the controller.
Under-voltage lockout keeps all outputs off for Vcc
below 10.5V. Vcc pin should be connected to an
isolated 15V power supply. Vcc recommended limits are
14V to 16V , and shall not exceed 18V. The return of
Vcc is pin 20.
Recommended power supply capability is about 70mA.
(3)
Signal ground for all signals at Pins 19 through 27. This
ground is internally connected to the +VDC Rtn through
1.7 Ohms. It is preferred not to have external connection
between Signal Gnd and +VDC Rtn.
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Page 7
SENSITRON
SEMICONDUCTOR
SPM6M080-010D
SPM6M060-025D
TECHNICAL DATA
Datasheet 4118, Rev. F
Pin #
Name
Description
21
SD (3)
It is an active low, dual function input/output pin. It is internally pulled
high to +5V by 2.74K . As a low input it shuts down all MOSFETs
regardless of the Hin and Lin signals.
SD is internally activated by the over-temperature shutdown, overcurrent limit, and desaturation protection
Desaturation shutdown is a latching feature. Over-temperature
shutdown, and over-current limit are not latching features.
SD can be used to shutdown all MOSFETs by an external command.
An open collector switch shall be used to pull down SD externally.
SD can be used as a fault condition output. Low output at SD indicates
a latching fault situation.
22
Flt (3)
It is a dual function input/output pin. It is an active low input, internally
pulled high to +5V by 2.74K . If pulled down, it will freeze the status of
all the six MOSFETs regardless of the Hin and Lin signals.
As an output, Pin 13, reports desaturation protection activation. When
desaturation protection is activated a low output for about 9 sec is
reported.
If any other protection feature is activated, it will not be reported by Pin
22.
23
Flt-Clr (3)
is a fault clear input. It can be used to reset a latching fault condition, due
to desaturation protection.
Pin 23 an active high input. It is internally pulled down by 2.0K. A
latching fault due to desaturation can be cleared by pulling this input high
to +5V by 200-500, or to +15V by 3-5Kas shown in Fig. 6.
It is recommended to activate fault clear input for about 300 sec at
startup.
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Page 8
SENSITRON
SEMICONDUCTOR
SPM6M080-010D
SPM6M060-025D
TECHNICAL DATA
Datasheet 4118, Rev. F
Pin #
Name
Description
24
+5V Output
+5V output. Maximum output current is 30mA
25
Itrip-Ref (3)
Adjustable voltage divider reference for over-current shutdown. Internal
pull-up to +5V 31.6K, pull down to ground is 10Kand hysteresis
resistance ofK. The internal set point is 1.64V, corresponding to
over-current shutdown of 34A. The re-start delay time is about 100
usec.
26
Idco
DC bus current sense amplifier output. The sensor gain is 0.049V/A. The
internal impedance of this output is 2.74K, and internal filter
capacitance is 1nF.
27
TCo
Analog output of case temperature sensor. The sensor output gain is
o
0.010 V/ C, with zero DC offset. This sensor can measure both positive
and negative oC. The internal impedance of this output is 10K
The internal block diagram of the temperature sensor is shown in Fig. 5.
28 &29
PhA
Phase A output
30 & 31
PhB
Phase B Output
32 & 33
PhC
Phase C Output
34 & 35
+VDC Rtn
DC Bus return
36 & 37
+VDC
DC Bus input
Case
Case
Isolated From All Terminals
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Page 9
SENSITRON
SEMICONDUCTOR
SPM6M080-010D
SPM6M060-025D
TECHNICAL DATA
Datasheet 4118, Rev. F
Application Notes
a- Input Interface:
Recommended input turn-on current for all six drive signals is 5-8mA.
For higher noise immunity the tri-state differential buffer, DS34C87, is recommended as
shown in Fig. 4.
Note : Connect LinA to non-inverting output for a non-inverting input logic.
Connect LinA to inverting output for an inverting input logic.
300-400
One Channel
of DS34C87
LinA
OptoCoupler
Input
2-5K
LinA-R
Fig. 4. Input Signal Buffer
b-Temperature Sensor Output:
10k
Pin 27
0.1uF
Fig. 5 Temperature Sensor Internal Block Diagram
For both negative and positive temperature measurement capability, Contact the Factory.
© 2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
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Page 10
SENSITRON
SEMICONDUCTOR
SPM6M080-010D
SPM6M060-025D
TECHNICAL DATA
Datasheet 4118, Rev. F
c- System Start Up Sequence:
Activate fault clear input for about 300 sec at startup. The micro-controller enable output is
inverted and fed to the second DS34C87 control input. When the controller is in disable mode, the
Flt-clr is enabled and Phase C low-side MOSFET is turned on. This allows for the bootstrap circuit
of the high-side MOSFET of Phase C to be charged. At the same time, the high-side bootstrap
circuits of Phases A and B will charge through the motor winding. Once the controller is enabled,
PWM signals of all channels should start.
Fig. 6 shows a recommended startup circuit.
Notes:
1- Gnd1 and Gnd2 are isolated grounds from each other.
2- The +5V power supply used for DS34C87 is an isolated power supply.
3- The +15V power supply used for SPM6M0xx-0xxD is an isolated power supply.
350
DS34C87
HinA
LinA
HinB
LinB
Enable
Micro
Controller
HinC
LinC
OutA-P
InA
OutA-N
OutB-P
InB
OutB-N
InC
OutC-P
OutC-N
InD
OutD-P
A/B Cont OutD-N
+5V
C/D Cont
Gnd
2.74k
2.74k
350
350
350
2.74k
2.74k
+5V-in
2.74k
Gnd2
DS34C87
350
OutA-P
OutA-N
OutB-P
InB
OutB-N
InC
OutC-P
OutC-N
InD
OutD-P
A/B Cont OutD-N
+5V
C/D Cont
Gnd
HinA
HinA-R
LinA
LinA-R
HinB
HinB-R
LinB
LinB-R
HinC
HinC-R
LinC
LinC-R
InA
350
SPM6G080-010D
350
350
15V
2.74K
Flt-Clr
Gnd1
2.74K
SFH6186-4
Fig. 6 Input Interface and Startup Circuit
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Page 11
SENSITRON
SEMICONDUCTOR
SPM6M080-010D
SPM6M060-025D
TECHNICAL DATA
Datasheet 4118, Rev. F
Truth Table For DS34C87
Input
Control Input
Non-Inverting Output
Inverting Output
H
H
H
L
L
H
L
H
X
L
Z
Z
d- DC Bus Charging from 15V
D1
Vcc
+15V
R1
100K
R2
100K
D2
DSH
Q1H
700
K
VBS
DSL
700
K
Figure 7.

D3
PhA

Q1L
Gate
Driver
+15V Rtn
Sgnl Gnd1




+VDC
+VDC Rtn
Charging Path from 15V Supply to DC Bus when DC Bus is off
Each MOSFET is protected against desaturation.
D2 is the desaturation sense diode for the high-side MOSFET
D3 is the desaturation sense diode for the low-side MOSFET
When the DC bus voltage is not applied or below 15V, there is a charging path from
the 15V supply to the DC bus through D2 and D3 and the corresponding pull up 100K
Ohm resistor. The charging current is 0.15mA per MOSFET. Total charging current is
about 1.5mA.
Do not apply PWM signal if the DC bus voltage is below 20V.
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Page 12
SENSITRON
SEMICONDUCTOR
SPM6M080-010D
SPM6M060-025D
TECHNICAL DATA
Datasheet 4118, Rev. F
g- Increasing Current Limit Window:
The adjustable over-current shutdown reference at Pin25 is internally set to 1.64V corresponding to
34A. A voltage divider reference is used as shown in Fig.16. Internal pull-up to +5V is 31.6K, pull
down to ground is 10Kand hysteresis resistance to SD is K. The re-start delay time, off
time, is about 100 usec.
In order to increase the over-current shutdown reference to 2.8V, corresponding to 57A peak
current, an external pull-up resistance R is needed. It is recommended to add R=9 K between
Pins 21 and 25. The corresponding off time will be about 200usec.
The additional R=9 K will reduce the high level of SD to 4.4V.
Pin 24
+5V
R1
31.6K
Pin 20
+15V Rtn
Signal Gnd
Figure 10.
Pin 21
SD
R4
2.74K
R3
49.9K
R2
10K
Pin 25
Itrip-ref
Internal Over-Current Shutdown Reference
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Page 13
SENSITRON
SEMICONDUCTOR
SPM6M080-010D
SPM6M060-025D
TECHNICAL DATA
Datasheet 4118, Rev. F
h- Cleaning Process:
Suggested precaution following cleaning procedure:
If the parts are to be cleaned in an aqueous based cleaning solution, it is recommended
that the parts be baked immediately after cleaning. This is to remove any moisture that
may have permeated into the device during the cleaning process. For aqueous based
solutions, the recommended process is to bake for at least 2 hours at 125 oC.
Do not use solvents based cleaners.
i- Soldering Procedure:
Recommended soldering procedure:
Signal pins 1 to 27: 210C for 10 seconds max
Power pins 28 to 37: 260C for 10 seconds max. Pre-warm module to 125C to aid in
power pins soldering.
Ordering Information:
SPM6M080-010D, SPM6M060-025D are standard with a bi-directional current sense
signal.
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
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Page 14