2SK3115 DS - Renesas Electronics

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3115
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
FEATURES
• Low gate charge
QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
• Gate voltage rating ±30 V
PART NUMBER
PACKAGE
2SK3115
Isolated TO-220
• Low on-state resistance
★
RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)
(Isolated TO-220)
• Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±6.0
A
ID(pulse)
±24
A
Total Power Dissipation (TA = 25°C)
PT1
2.0
W
Total Power Dissipation (TC = 25°C)
PT2
35
W
Channel Temperature
Tch
150
°C
Tstg
−55 to +150
°C
IAS
6.0
A
EAS
24
mJ
Drain Current (pulse)
Note1
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13338EJ2V0DS00 (2nd edition)
Date Published January 2001 NS CP (K)
Printed in Japan
The mark ★ shows major revised points.
©
1998, 2001
2SK3115
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
100
µA
Gate Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
±100
nA
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
V
| yfs |
VDS = 10 V, ID = 3.0 A
2.0
RDS(on)
VGS = 10 V, ID = 3.0 A
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
S
0.9
Ω
1.2
Input Capacitance
Ciss
VDS = 10 V
1100
pF
Output Capacitance
Coss
VGS = 0 V
200
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
20
pF
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 3.0 A
18
ns
VGS(on) = 10 V
12
ns
RG = 10 Ω, RL = 50 Ω
50
ns
15
ns
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDD = 450 V
26
nC
Gate to Source Charge
QGS
VGS = 10 V
6
nC
Gate to Drain Charge
QGD
ID = 6.0 A
10
nC
VF(S-D)
IF = 6.0 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 6.0 A, VGS = 0 V
1.4
µs
Reverse Recovery Charge
Qrr
di/dt = 50 A/µs
6.5
µC
Body Diode Forward Voltage
★ TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS(on)
10%
90%
VDD
VDS
90%
BVDSS
IAS
VDS
VDS
ID
Starting Tch
τ
τ = 1 µs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
PG.
2
50 Ω
10%
0
10%
Wave Form
VDD
D.U.T.
IG = 2 mA
90%
VDS
VGS
0
RL
VDD
Data Sheet D13338EJ2V0DS
td(on)
tr
ton
td(off)
tf
toff
2SK3115
★ TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
80
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
100
80
60
40
20
0
0
20
40
60
80
100
120 140
60
40
20
160
0
Tch - Channel Temperature - ˚C
20
40
60
80
100
120 140
160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
10
)
(on
DS
R
0.1
1
PW
ID(DC)
Po
we
r
1
Di
ss
ipa
tio
n
10
m
10
0m s
Lim
s
ite
d
=1
0µ
s
10
0µ
s
1m
s
TC = 25˚C
Single Pulse
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r th (t) - Transient Thermal Resistance - ˚C/W
ID - Drain Current - A
ID(pulse)
d
ite
Lim
100
Rth(ch-A) = 62.5˚C/W
10
Rth(ch-C) = 3.57˚C/W
1
0.1
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D13338EJ2V0DS
3
2SK3115
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
Pulsed
100
ID - Drain Current - A
ID - Drain Current - A
25
VGS = 10 V
20
8V
15
6V
10
Tch = 125˚C
75˚C
10
Tch = 25˚C
−25˚C
1.0
0.1
5
0
10
20
30
40
0
5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
RDS (on) - Drain to Source On-state Resistance - Ω
| yfs | - Forward Transfer Admittance - S
4.0
3.0
2.0
1.0
VDS = 10 V
ID = 1mA
0
50
100
150
10
Tch = −25˚C
25˚C
75˚C
125˚C
1.0
VDS = 10 V
Pulsed
0.1
0.1
10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed
2.0
ID = 6.0 A
3.0 A
1.0
0
0
4
8
12
16
20
2.0
Pulsed
1.6
1.2
VGS = 10 V
20 V
0.8
0.4
0
1.0
VGS - Gate to Source Voltage - V
4
1.0
Tch - Channel Temperature - ˚C
RDS(on) - Drain to Source On-state Resistance - Ω
VGS(off) - Gate Cut-off Voltage - V
5.0
0
−50
10
VDS = 10 V
Pulsed
15
10
ID - Drain Current - A
Data Sheet D13338EJ2V0DS
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
3.0
ID = 6.0 A
3.0 A
2.0
1.0
VGS = 10 V
Pulsed
0
−50
0
100
50
ISD - Diode Forward Current - A
RDS (on) - Drain to Source On-state Resistance - Ω
2SK3115
100
10
1.0
0.1
150
VGS = 10 V
0
Tch - Channel Temperature - ˚C
0V
0.5
Pulsed
1.5
1.0
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
10000
Ciss
1000
Coss
100
10
VGS = 0 V
f = 1 MHz
1
1.0
Crss
10
100
td(off)
tf
td(on)
10
tr
1
VDD = 150 V
VGS = 10 V
RG = 10 Ω
0.1
0.1
1000
1
trr - Reverse Recovery Time - ns
di/dt = 50 A/µs
VGS = 0 V
1000
100
10
0.1
1.0
10
100
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
10000
10
ID - Drain Current - A
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
ID = 6 A
14
VGS
VDD = 450 V
600
12
300 V
120 V
10
400
8
6
200
4
VDS
2
0
10
20
30
VGS - Gate to Source Voltage - V
Ciss, Coss, Crss - Capacitance - pF
100
0
40
Qg - Gate Charge - nC
ID - Drain Current - A
Data Sheet D13338EJ2V0DS
5
2SK3115
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
10
IAS = 6 A
EAS
=2
4m
J
1.0
RG = 25 Ω
VDD = 150 V
VGS = 20 → 0 V
Starting Tch = 25˚C
0.1
10 µ
100 µ
1m
10 m
Energy Derating Factor - %
IAS - Single Avalanche Current - A
100
VDD = 150 V
RG = 25 Ω
VGS = 20 → 0 V
IAS ≤ 6 A
100
80
60
40
20
0
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - ˚C
L - Inductive Load - H
PACKAGE DRAWING (Unit: mm)
Isolated TO-220(MP-45F)
10.0 ± 0.3
φ 3.2 ± 0.2
4.5 ± 0.2
2.7 ± 0.2
EQUIVALENT CIRCUIT
12.0 ± 0.2
Body
Diode
Gate (G)
13.5MIN.
4 ± 0.2
3 ± 0.1
15.0 ± 0.3
Drain (D)
Source (S)
1.3 ± 0.2
2.5 ± 0.1
0.65 ± 0.1
1.5 ± 0.2
2.54
0.7 ± 0.1
2.54
1.Gate
2.Drain
3.Source
1 2 3
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly
dissipate it once, when it has occurred.
6
Data Sheet D13338EJ2V0DS
2SK3115
[MEMO]
Data Sheet D13338EJ2V0DS
7
2SK3115
• The information in this document is current as of January, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4