RENESAS NESG340033

PreliminaryData Sheet
NESG340033
R09DS0016EJ0100
Rev.1.00
Mar 29, 2011
NPN Silicon Germanium RF Transistor
DESCRIPTION
The NESG340033 is an ideal choice for low noise, low distortion amplification.
FEATURES
•
•
•
•
•
•
•
NF = 0.65 dB TYP. @ VCE = 3.3 V, IC = 15 mA, f = 1 GHz
Po (1 dB) = 21 dBm TYP. @ VCE = 3.3 V, IC (set) = 40 mA, f = 1 GHz
OIP3 = 35.5 dBm TYP. @ VCE = 3.3 V, IC (set) = 50 mA, f = 1 GHz
Maximum stable power gain: MSG =13.0 dB TYP. @ VCE = 3.3 V, IC = 40 mA, f = 1 GHz
SiGe HBT technology (UHS3) : fT = 10 GHz
This product is improvement of ESD
3-pin minimold (33 PKG)
APPLICATIONS
• Suitable for up to 1GHz applications.
e.g. LNA (Low Noise Amplifier) or Power splitter for Digital-TV.
OUTLINE
RENESAS Package code: 33
(Package name: 3-pin minimold (33 PKG))
1. Emitter
2. Base
3. Collector
Note: Marking is "R7E"
ORDERING INFORMATION
Part Number
NESG340033
Order Number
NESG340033-A
NESG340033-T1B
NESG340033-T1B-A
Package
3-pin minimold
(33 PKG)
(Pb-Free)
Quantity
50 pcs
(Non reel)
3 kpcs/reel
Supplying Form
• Embossed tape 8 mm wide
• Pin 3 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0016EJ0100 Rev.1.00
Mar 29, 2011
Page 1 of 10
NESG340033
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Symbol
VCBO
Collector to Emitter Voltage
(Base Short)
VCES
Ratings
5.5
13
Unit
V
V
Collector to Emitter Voltage
(Base Open)
Base Current Note1
Collector Current
Total Power Dissipation Note2
Junction Temperature
Storage Temperature
VCEO
5.5
V
IB
IC
Ptot
Tj
Tstg
36
400
480
150
−65 to +150
mA
mA
mW
°C
°C
Notes: 1. Depend on the ESD protect device.
2. Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB
THERMAL RESISTANCE (TA = +25°C)
Parameter
Termal Resistance from
Note
Junction to Ambient
Note:
Symbol
Ratings
260
Rthj-a
Unit
°C/W
Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB
RECOMMENDED OPERATING RANGE (TA = +25°C)
Parameter
Collector Current
R09DS0016EJ0100 Rev.1.00
Mar 29, 2011
Symbol
IC
MIN.
−
TYP.
50
MAX.
−
Unit
mA
Page 2 of 10
NESG340033
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
Symbol
ICBO
IEBO
hFE Note1
fT
⏐S21e⏐2
NF1
Test Conditions
MIN.
TYP.
MAX.
Unit
VCB = 5 V, IE = 0
VEB = 0.4 V, IC = 0
VCE = 3.3 V, IC = 15 mA
−
−
200
−
−
300
100
100
400
nA
nA
−
VCE = 3.3 V, IC = 40 mA, f = 1 GHz
VCE = 3.3 V, IC = 40 mA, f = 1 GHz
9.5
10.0
11.5
−
−
GHz
dB
VCE = 3.3 V, IC = 15 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50 Ω
−
0.65
1.05
dB
Noise Figure (2)
NF2
VCE = 3.3 V, IC = 40 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
−
0.7
−
dB
Associated Gain (1)
Ga1
VCE = 3.3 V, IC = 15 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50 Ω
9.5
11.5
−
dB
Associated Gain (2)
Ga2
VCE = 3.3 V, IC = 40 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
VCB = 3.3 V, IE = 0, f = 1 MHz
VCE = 3.3 V, IC = 40 mA, f = 1 GHz
−
12.0
−
dB
−
11.0
0.95
13.0
1.15
−
pF
dB
Note 2
Reverse Transfer Capacitance
Maximum Stable Power Gain
Cre
MSG Note 3
Gain 1 dB Compression Output
Power
PO (1 dB)
VCE = 3.3 V, IC (set) = 40 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
−
21.0
−
dBm
Output 3rd Order Intercept
Point 1
OIP3 1
VCE = 3.3 V, IC (set) = 40 mA, f = 1 GHz,
Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt
−
35.0
−
dBm
Output 3rd Order Intercept
Point 2
OIP3 2
VCE = 3.3 V, IC (set) = 50 mA, f = 1 GHz,
Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt
−
35.5
−
dBm
Notes: 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded.
S21
3. MSG =
S12
hFE CLASSIFICATION
Rank
Marking
hFE Value
YFB
R7E
200 to 400
R09DS0016EJ0100 Rev.1.00
Mar 29, 2011
Page 3 of 10
NESG340033
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance Cre (pF)
Total Power Dissipation Ptot (mW)
1 000
3.8 cm × 9.0 cm × 0.8 mm (t),
FR-4
900
800
700
600
500
480
400
300
200
100
0
0
25
50
75
100
125
150
1.3
f = 1 MHz
1.2
1.1
1.0
0.9
0.8
0
2
3
4
5
Ambient Temperature TA (°C)
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
6
100
VCE = 3.3 V
VCE = 5 V
10
Collector Current IC (mA)
Collector Current IC (mA)
1
1
0.1
0.01
0.001
10
1
0.1
0.01
0.001
0.0001
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
0.0001
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector Current IC (mA)
300
1850 μA
1650 μA
1450 μA
1250 μA
250
200
1050 μA
850 μA
150
650 μA
100
450 μA
250 μA
50
IB = 50 μA
0
0
1
2
3
4
5
6
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
R09DS0016EJ0100 Rev.1.00
Mar 29, 2011
Page 4 of 10
NESG340033
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
1 000
VCE = 5 V
DC Current Gain hFE
DC Current Gain hFE
VCE = 3.3 V
100
10
1
10
100
10
1
1 000
100
1 000
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
VCE = 3.3 V
f = 1 GHz
Gain Bandwidth Product fT (GHz)
Gain Bandwidth Product fT (GHz)
10
Collector Current IC (mA)
20
15
10
5
0
100
1
10
100
Collector Current IC (mA)
VCE = 5 V
f = 1 GHz
15
10
5
0
1
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0016EJ0100 Rev.1.00
Mar 29, 2011
Page 5 of 10
NESG340033
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
VCE = 3.3 V
IC = 10 mA
40
35
30
|S21|2
20
MSG
MAG
15
MAG
10
MSG
5
0
0.01
0.1
1
10
35
30
25
|S21|2
20
MSG
MAG
15
MAG
10
MSG
5
0
0.01
0.1
1
10
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
VCE = 3.3 V
IC = 40 mA
40
35
|S21|2
25
MSG
20
MAG
15
MAG
10
MSG
5
0
0.01
VCE = 5 V
IC = 10 mA
40
Frequency f (GHz)
45
30
45
Frequency f (GHz)
0.1
1
10
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
45
45
VCE = 5 V
IC = 40 mA
40
35
30
|S21|2
25
MSG
20
MAG
15
MAG
10
MSG
5
0
0.01
0.1
1
10
Frequency f (GHz)
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
15
MSG
MAG
10
|S21e|2
5
VCE = 3.3 V
f = 1 GHz
0
1
10
100
Collector Current IC (mA)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
20
15
MSG
MAG
10
|S21e|2
5
VCE = 5 V
f = 1 GHz
0
1
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0016EJ0100 Rev.1.00
Mar 29, 2011
Page 6 of 10
NESG340033
4
16
12
3
10
8
2
6
4
1
NF
Noise Figure NF (dB)
14
Ga
16
VCE = 5 V,
f = 1 GHz,
ZS = ZL = Zopt
14
Ga
12
3
10
8
2
6
4
1
NF
2
0
1
0
100
10
0
1
0
100
10
Collector Current IC (mA)
Collector Current IC (mA)
OUTPUT POWER, LINEAR GAIN,
COLLECTOR CURRENT vs. INPUT POWER
OUTPUT POWER, LINEAR GAIN,
COLLECTOR CURRENT vs. INPUT POWER
40
300
Pout
20
200
IC
GL
10
0
–10
100
0
10
20
0
30
Input Power Pin (dBm)
Output Power Pout (dBm)
Linear Gain GL (dB)
30
40
400
VCE = 3.3 V,
IC (set) = 40 mA,
f = 1 GHz
Collector Current IC (mA)
Output Power Pout (dBm)
Linear Gain GL (dB)
2
30
400
VCE = 5 V,
IC (set) = 40 mA,
f = 1 GHz
300
Pout
20
200
IC
GL
10
0
–10
100
0
10
20
Collector Current IC (mA)
VCE = 3.3 V,
f = 1 GHz,
ZS = ZL = Zopt
Associated Gain Ga (dB)
Noise Figure NF (dB)
4
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Associated Gain Ga (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
0
30
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0016EJ0100 Rev.1.00
Mar 29, 2011
Page 7 of 10
40
20
Pout
0
–20
–40
IM3
VCE = 3.3 V,
IC (set) = 50 mA,
f1 = 1.000 GHz
f2 = 1.001 GHz
–60
–80
–20
–10
0
10
20
30
Each Output Power Pout (each) (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
EACH OUTPUT POWER, IM3
vs. EACH INPUT POWER
EACH OUTPUT POWER, IM3
vs. EACH INPUT POWER
40
20
Pout
0
–20
–40
IM3
VCE = 5 V,
IC (set) = 50 mA,
f1 = 1.000 GHz
f2 = 1.001 GHz
–60
–80
–20
–10
0
10
20
30
Each Input Power Pin (each) (dBm)
Each Input Power Pin (each) (dBm)
OUTPUT 3RD ORDER INTERCEPT POINT
vs. COLLECTOR CURRENT
OUTPUT 3RD ORDER INTERCEPT POINT
vs. COLLECTOR CURRENT
40
40
Output 3rd Order Intercept OIP3 (dBm)
Output 3rd Order Intercept OIP3 (dBm)
Each Output Power Pout (each) (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
NESG340033
VCE = 3.3 V,
f1 = 1.000 GHz
f2 = 1.001 GHz
30
20
10
0
1
10
100
Collector Current IC (mA)
VCE = 5 V,
f1 = 1.000 GHz
f2 = 1.001 GHz
30
20
10
0
1
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0016EJ0100 Rev.1.00
Mar 29, 2011
Page 8 of 10
NESG340033
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www2.renesas.com/microwave/en/download.html
R09DS0016EJ0100 Rev.1.00
Mar 29, 2011
Page 9 of 10
NESG340033
PACKAGE DIMENSIONS
3-PIN MINIMOLD (33 PKG) (UNIT: mm)
0.65+0.1
–0.15
1
3
0.4+0.1
–0.05
0.95
2
0.95
1.5
Marking
0 to 0.1
1.1 to 1.4
0.16+0.1
–0.05
0.3
2.9±0.2
0.4+0.1
–0.05
2.8±0.2
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
R09DS0016EJ0100 Rev.1.00
Mar 29, 2011
Page 10 of 10
Revision History
Rev.
1.00
Date
Mar 29, 2011
NESG340033 Data Sheet
Description
Summary
Page
−
First edition issued
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