NEC NESG240034

DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG240034
NPN SiGe RF TRANSISTOR FOR
UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION
3-PIN POWER MINIMOLD (34 PKG)
FEATURES
• The device is an ideal choice for low noise, low distortion amplification.
NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz
• PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz
• OIP3 = 35.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz
• Maximum stable power gain: MSG =11.5 dB TYP. @ VCE = 5 V, IC = 40 mA, f = 1 GHz
• SiGe HBT technology (UHS2) : fT = 10.0 GHz
• This product is improvement of ESD of NESG2xxx series.
• 3-pin power minimold (34 PKG)
ORDERING INFORMATION
Part Number
NESG240034
NESG240034-T1
Order Number
NESG240034-A
Package
Quantity
3-pin power minimold
25 pcs
(34 PKG) (Pb-Free)
(Non reel)
NESG240034-T1-A
1 kpcs/reel
Supplying Form
• Magazine case
• 12 mm wide embossed taping
• Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 25 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10769EJ02V0DS (2nd edition)
Date Published November 2009 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2009
NESG240034
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
5.5
V
Collector to Emitter Voltage
VCES
13
V
Collector to Emitter Voltage
VCEO
5.5
V
Note 1
IB
36
mA
Collector Current
IC
400
mA
886
mW
Base Current
<R>
Total Power Dissipation
Ptot
Note 2
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Notes 1. Depend on the ESD protect device.
2. Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB
THERMAL RESISTANCE (TA = +25°C)
Parameter
<R>
Termal Resistance from Junction to
Note
Ambient
Symbol
Ratings
Unit
Rthj-a
141
°C/W
Note Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB
RECOMMENDED OPERATING RANGE (TA = +25°C)
Parameter
<R>
Collector Current
2
Symbol
MIN.
TYP.
MAX.
Unit
IC
−
40
−
mA
Data Sheet PU10769EJ02V0DS
NESG240034
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−
−
100
nA
Emitter Cut-off Current
IEBO
VEB = 0.4 V, IC = 0 mA
−
−
100
nA
VCE = 5 V, IC = 15 mA
140
180
260
−
VCE = 5 V, IC = 40 mA, f = 1 GHz
−
10.0
−
GHz
⏐S21e⏐
VCE = 5 V, IC = 40 mA, f = 1 GHz
8.5
10.5
−
dB
Noise Figure (1)
NF1
VCE = 5 V, IC = 15 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50Ω
−
0.7
1.1
dB
Noise Figure (2)
NF2
VCE = 5 V, IC = 40 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
−
0.9
−
dB
Associated Gain (1)
Ga1
VCE = 5 V, IC = 15 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50Ω
8.0
10.0
−
dB
Associated Gain (2)
Ga2
VCE = 5 V, IC = 40 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
−
11.0
−
dB
VCB = 5 V, IE = 0 mA, f = 1 MHz
−
1.1
1.3
pF
VCE = 5 V, IC = 40 mA, f = 1 GHz
9.5
11.5
−
dB
VCE = 5 V, IC (set) = 40 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
−
24
−
dBm
VCE = 5 V, IC (set) = 40 mA, f = 1 GHz,
−
35.5
−
dBm
DC Current Gain
hFE
Note 1
RF Characteristics
Gain Bandwidth Product
fT
2
Insertion Power Gain
Reverse Transfer Capacitance
Maximum Stable Power Gain
Cre
Note 2
MSG
Note 3
Gain 1 dB Compression Output
Power
PO (1 dB)
Output 3rd Order Intercept Point
OIP3
Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded.
3. MSG =
S21
S12
hFE CLASSIFICATION
Rank
FB
Marking
SR
hFE Value
140 to 260
Data Sheet PU10769EJ02V0DS
3
NESG240034
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Total Power Dissipation Ptot (mW)
1 000
Reverse Transfer Capacitance Cre (pF)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
3.8 cm × 9.0 cm × 0.8 mm (t),
FR–4
886
500
0
0
25
50
75
100
125
150
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0
3
4
5
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 5 V
10
Collector Current IC (mA)
Collector Current IC (mA)
2
Collector to Base Voltage VCB (V)
VCE = 3 V
1
0.1
0.01
0.001
0.0001
0.4
0.5
0.6
0.8
0.7
0.9
1.0
10
1
0.1
0.01
0.001
0.0001
0.4
Base to Emitter Voltage VBE (V)
400
4.0 mA
3.6 mA
3.2 mA
2.8 mA
2.4 mA
2.0 mA
300
1.6 mA
200
1.2 mA
0.8 mA
100
IB = 0.4 mA
0
0
1
2
3
0.5
0.6
0.7
0.8
0.9
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
4
5
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
4
1
Ambient Temperature TA (°C)
100
Collector Current IC (mA)
<R>
Data Sheet PU10769EJ02V0DS
1.0
NESG240034
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
VCE = 3 V
VCE = 5V
DC Current Gain hFE
DC Current Gain hFE
1 000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
100
10
1
0.001
0.01
0.1
100
10
1
0.001
1
0.01
Collector Current IC (A)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
20
VCE = 3 V,
f = 1 GHz
Gain Bandwidth Product fT (GHz)
Gain Bandwidth Product fT (GHz)
1
Collector Current IC (A)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
15
10
5
0
1
0.1
10
100
VCE = 5 V,
f = 1 GHz
15
10
5
0
1
Collector Current IC (mA)
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10769EJ02V0DS
5
NESG240034
35
VCE = 3 V,
IC = 40 mA
30
25
MSG
MAG
20
MAG
15
MSG
2
|S21e|
10
5
0
0.1
1
10
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
VCE = 5 V,
IC = 40 mA
30
25
MSG
MAG
20
MSG
MAG
15
|S21e|2
10
5
0
0.1
10
1
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
VCE = 3 V,
f = 1 GHz
15
MSG
MAG
10
|S21e|2
5
0
1
10
100
20
VCE = 5 V,
f = 1 GHz
MSG
MAG
15
10
|S21e|2
5
0
–5
1
10
Collector Current IC (mA)
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
6
35
Frequency f (GHz)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Data Sheet PU10769EJ02V0DS
100
NESG240034
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
3
14
12
Ga
10
2
8
6
1
4
NF
2
0
1
0
100
10
40
VCE = 5 V,
f1 = 1.000 GHz,
f2 = 1.001 GHz
30
20
10
0
1
10
100
Collector Current IC (mA)
OUTPUT POWER, LINEAR GAIN,
COLLECTOR CURRENT vs. INPUT POWER
EACH OUTPUT POWER, IM3
vs. EACH INPUT POWER
25
400
Pout
350
300
20
250
15
GL
10
200
5
150
IC
0
100
50
–5
–10
–20
–10
0
10
0
30
20
Collector Current IC (mA)
30
450
VCE = 5 V,
IC (set) = 40 mA,
f = 1 GHz
Each Output Power Pout (each) (dBm)
3rd Order Intermodulation Distortion IM3 (dB)
Collector Current IC (mA)
35
Output Power Pout (dBm)
Linear Gain GL (dB)
Output 3rd Order Intercept Point OIP3 (dBm)
16
VCE = 5 V,
f = 1 GHz,
ZS = ZSopt, ZL = 50 Ω
Associated Gain Ga (dB)
Noise Figure NF (dB)
4
OUTPUT 3RD ORDER INTERCEPT POINT
vs. COLLECTOR CURRENT
40
30
20
10
0
Pout
–10
–20
–30
–40
–50
–60
–70
–80
–20
IM3
–10
VCE = 5 V,
IC (set) = 40 mA,
f1 = 1.000 GHz,
f2 = 1.001 GHz
0
10
20
30
Each Input Power Pin (each) (dBm)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
Data Sheet PU10769EJ02V0DS
7
NESG240034
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm)
4.5±0.1
1.5±0.1
0.8 MIN.
2
1
3
0.42±0.06
4.0±0.25
2.5±0.1
1.6±0.2
0.42±0.06
0.47±0.06
1.5
3.0
PIN CONNECTIONS
1. Emitter
2. Collector
3. Base
8
Data Sheet PU10769EJ02V0DS
0.41+0.03
–0.06
NESG240034
• The information in this document is current as of November, 2009. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products
and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
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M8E0904E