SGA-5263Z Reliability Qualification Report

Reliability Qualification Report
SGA-5263Z
Products Qualified by Similarity
SGA-4563Z/4463Z/4363Z/4263Z/4163Z
SGA-3563Z/3463Z/3363Z/3263Z
SGA-2463Z/2363Z/2263Z/2163Z
SGA-1263Z/1163Z
SGA-0363Z/0163Z
SGA-8343Z/8543Z
SGC-2363Z/2463Z/4363Z/4463Z
SGL-0163Z/0263Z/0363Z
303 S. Technology Ct, Broomfield CO, 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
Document RQR-103792 Rev D
SGA-5263Z Reliability Qualification Report
I. Qualification Overview
The SGA-5263Z family of products has demonstrated reliable operation by passing all
qualification testing in our product qualification test plan. The “Z’ designates a lead-free
lead frame using Tin plated leads and Green mold compound. The SGA-5263Z has been
subject to stresses such as humidity (autoclave), extreme hot and cold environments
(temperature cycling), moisture sensitivity (MSL-1 and solder reflow testing), and has
demonstrated reliable performance.
II. Introduction
Sirenza Microdevices’ SGA-5263Z is a high performance cascadeable 50-ohm amplifier
designed for operation at voltages as low as 3.4V. This RFIC uses the latest Silicon
Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron
emitters with FT up to 50GHz. This circuit uses a Darlington pair topology with resistive
feedback for broadband performance as well as stability over its entire temperature
range. Internally matched to 50 Ohm impedance, the SGA-5263Z requires only DC
blocking and bypass capacitors for external components.
III. Fabrication Technology
These amplifiers are manufactured using a Silicon Germanium Heterojunction Bipolar
Transistor (HBT) technology. This self-aligned emitter, double poly HBT process has
been in production by our foundry since 1998. The process has been successfully used
for a wide range of RFIC products including GSM PAs, DECT front end transceivers,
LNAs & VCOs. This process offers comparable performance to GaAs HBTs with the
added advantages of mature and high producible Silicon wafer processing.
IV. Package Type
The SGA-5263Z power amplifier is packaged in a plastic encapsulated SOT-363
package that is assembled using a highly reproducible automated assembly process.
The die is mounted using an industry standard thermally and electrically conductive silver
epoxy. The SOT-363 is a similar package differing only by having two more leads than
the SOT-343.
Figure 1: Image of SOT-363 Encapsulated Plastic Package
(left) and a SOT-343 Encapsulated Plastic Package (right)
SGA-5263Z Reliability Qualification Report
V. Qualification Methodology
The Sirenza Microdevices qualification process consists of a series of tests designed to
stress various potential failure mechanisms. This testing is performed to ensure that
Sirenza Microdevices products are robust against potential failure modes that could arise
from the various die and package failure mechanisms stressed. The qualification testing
is based on JEDEC test methods common to the semiconductor industry. A FMEA
approach is used to determine the test methods to be included in the qualification plan.
The manufacturing test specifications are used as the PASS/FAIL criteria for initial and
final DC/RF tests.
VI. Qualification By Similarity
A device can be qualified by similarity provided that no new potential failure
modes/mechanisms are possible in the new design. Products qualified by similarity
listed on Page 1 of this document.
VII. Operational Life Testing
Sirenza Microdevices defines operational life testing as a DC biased elevated
temperature test performed at the maximum operational junction temperature limit. For
the SGA-5263Z the maximum operational temperature limit is 150oC. The purpose of the
operational life test is to statistically show that the product operated at its maximum
operational ratings will be reliable by operating several hundred devices for a total time of
1000 hours. The results for this test are expressed in device hours that are calculated by
multiplying the total number of devices passing the test by the number of hours tested.
VIII. Moisture Sensitivity Level - MSL Level 1 Device
SGA-5263Z has successfully completed 168 hours of moisture soak (85oC/85%RH)
followed by three convection reflow cycles with a peak temperature of 270oC. The
successful completion of this test classifies the part as JESD 22-A113B Moisture
Sensitivity Level 1 (MSL-1). MSL-1 indicates that no special dry pack requirements or
time limits from opening of static bag to reflow exist for the SGA-5263Z. MSL-1 is highest
level of moisture resistance that a device can be classified according to the above
mentioned standard.
SGA-5263Z Reliability Qualification Report
IX. Electrostatic Discharge Classification
Sirenza Microdevices classifies Human Body Model (HBM) electrostatic discharge (ESD)
according to the JESD22-A114 convention. All pin pair combinations were tested. Each
pin pair is stressed at one static voltage level using 1 positive and 1 negative pulse
polarity to determine the weakest pin pair combination. The weakest pin pair is tested
with 3 devices below and above the failure voltage to classify the part. The Pass/Fail
status of a part is determined by the manufacturing test specification. The ESD class
quoted indicates that the device passed exposure to a certain voltage, but does not pass
the next higher level. The following table indicates the JESD ESD sensitivity
classification levels.
Class
Passes
Fails
0
1A
1B
1C
2
0V
250 V
500 V
1000 V
2000 V
<250 V
500 V
1000 V
2000 V
4000 V
Part Number
SGA-2163Z
SGA-3x63Z
SGA-4x63Z
SGA-5263Z
SGA-0163Z
SGA-1163Z
SGA-8343Z
SGL-0363Z
ESD Rating
Class 1B
Class 1B
Class 1B
Class 1B
Class 0
Class 0
Class 1A
Class 1B
X. Operational Life Test Results
The results for SGA-5263Z High Temperature Operating Life Test are as follows:
HTOL Completion
Date
Test
Duration
Junction
Temperature
Quantity
Device Hours
June-04
1000
hours
150°C
80
80,000
SGA-5263Z Reliability Qualification Report
XI. Qualification Test Results
Group
Test Name
Test Condition/
Standard
Sample Size
Results
210
Pass
Preconditioning
MSL1
Reflow @ 270oC Peak
JESD22-A113C
20
Pass
Temperature Cycling
Air to Air, Soldered on PCB
-65oC to 150oC
10 min dwell, 1 min transition
1000 cycles
JESD22-A104B
20
Pass
A1b
Temperature Cycle
-65°C to +150°C
10 min dwell, 1 min transition
1000 cycles
JESD22-A104B
High Temperature
Operating Life
Tj = 150°C
1000 hours
JESD22-A108B
80
Pass
A2
Pass
HAST
Tamb=110°C, 85%RH
Biased, 264 hours
JESD22-A110B
15
B
Pass
Autoclave
Tamb=121°C, 100%RH
Un-Biased, 96 hours
JESD22-A102C
40
C
A0
A1a
SGA-5263Z Reliability Qualification Report
VIII. Qualification Test Results
Test Name
Test Condition/
Standard
D
Sample Size
Results
20
Pass
Power Temperature
Cycle
-40°C to +85°C
Cycled bias (5’ on/5’off)
1000 cycles
JESD22-A109A
High Temperature
Storage
Tamb=150°C
1000 hours
JESD22-A103B
20
Pass
E
F
Low Temperature
Storage
Tamb=-40°C
1000 hours
20
Pass
10
Pass
Tin Whisker
Tamb=51°C, 85%RH
1000 hours
Dip & Look
Sn/Ag/Cu solder
Steam Age Condition C
Dip Condition B, 245°C
JESD22-B102C
15
Pass
Group
I
G
Solderability
SGA-5263Z Reliability Qualification Report
XII. Junction Temperature Determination
One key issue in performing qualification testing is to accurately determine the junction
temperature of the device. Sirenza Microdevices uses a 3um spot size emissivity
corrected infrared camera measurement to resolve the surface temperature of the device
at the maximum operational power dissipation. The results are displayed below for the
device running at operational current of 60.9 mA, a device voltage of 3.18 V, and a lead
temperature of 87.7°C.
Resistor Tj = 115.9°C
Transistor Tj = 105.6°C
Figure 2: Infrared Thermal Image of SGA-5263Z, Vd =3.18 V, Id =60.9 mA, T lead = 87.7°C
SGA-5263Z Reliability Qualification Report
XIV. Junction Temperature Determination of SGA-8343Z
One key issue in performing qualification testing is to accurately determine the junction
temperature of the device. Sirenza Microdevices uses a 3um spot size emissivity
corrected infrared camera measurement to resolve the surface temperature of the device
at the maximum operational power dissipation. The results are displayed below for the
device running at operational current of 50.0mA, a device voltage of 4V, and a lead
temperature of 85.1°C.
Transistor Tj = 112.9°C
Figure 2: Infrared Thermal Image of SGA-8343Z, Vd =4V, Id =50.0mA, T lead = 85.1°C