SGC2363Z SGC2363Z 50MHz to 4000MHz Active Bias Silicon Germanium Cascadable Gain Block 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGC2363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active-bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC2363Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC2363Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50. Gain & Return Loss GaAs MESFET SiGe HBT GaAs pHEMT 10 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C 0 -10 S22 Si CMOS -20 Si BJT -30 GaN HEMT OIP3 =23dBm at 1950MHz Robust 1000V ESD, Class 1C HBM PA Driver Amplifier Cellular, PCS, GSM, UMTS, WCDMA IF Amplifier Wireless Data, Satellite S11 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) RF MEMS Parameter Small Signal Gain Single, Fixed 3V Supply No Dropping Resistor Required Patented Self-Bias Circuitry P1dB =10.1dBm at 1950MHz Applications S21 20 Gain, RL (dB) Si BiCMOS VD = 3V, ID = 26mA 30 GaAs HBT SiGe BiCMOS Optimum Technology Matching® Applied InGaP HBT Min. Specification Typ. Max. Unit Condition 15.5 11.6 17.0 18.5 dB 850MHz 13.1 14.6 dB 1950MHz 12.3 dB 2400MHz Output Power at 1dB Compression 10.4 dBm 850MHz 9.1 10.1 dBm 1950MHz 9.6 dBm 2400MHz Output Third Order Intercept Point 23.0 dBm 850MHz 21.0 23.0 dBm 1950MHz 24.0 dBm 2400MHz Input Return Loss 12.0 15.0 dB 1950MHz Output Return Loss 10.5 14.5 dB 1950MHz Noise Figure 3.7 4.8 dB 1930MHz Thermal Resistance 255 °C/W junction - lead Device Operating Voltage 3.0 V Device Operating Current 22.0 26.0 30.0 mA Test Conditions: VD =3V, ID =26mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, TL =25°C, ZS =ZL =50 RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS111011 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 6 SGC2363Z Absolute Maximum Ratings Parameter Rating Unit Device Current (ICE) 55 Device Voltage (VCE) 4 V RF Input Power* (See Note) 12 dBm +150 °C -40 to +85 °C +150 °C Junction Temp (TJ) Operating Temp Range (TL) Storage Temp ESD Rating - Human Body Model (HBM) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. mA The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Class 1C Moisture Sensitivity Level MSL 1 *Note: Load condition ZL =50. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l and TL =TLEAD Typical RF Performance with Application Circuit at Key Operating Frequencies Parameter Unit 100 MHz 500 MHz 850 MHz 1950 MHz 2400 MHz 3500 MHz Small Signal Gain (G) Output Third Order Intercept Point (OIP3) dB dBm 18.4 23.0 18.1 23.5 17.0 23.0 13.1 23.0 12.3 24.0 9.8 22.0 Output Power at 1dB Compression (P1dB) Input Return Loss (IRL) Output Return Loss (ORL) Reverse Isolation (S12) dBm dB dB dB 12.1 23.5 22.5 20.5 11.0 19.0 18.5 21.5 10.4 18.0 16.5 22.0 10.1 15.0 14.5 20.5 9.6 16.5 13.0 20.0 8.3 14.0 12.5 19.0 Noise Figure (NF) dB 2.9 3.0 Test Conditions: VD =3V ID =26mA Typ. OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm TL =25°C ZS =ZL =50 3.3 3.7 3.9 4.7 Typical Performance with Bias Tee, VD =3V, ID =26mA OIP3 vs. Frequency (-5dBm/tone, 1MHz spacing) 13 P1dB (dBm) 26 OIP3 (dBm) P1dB vs. Frequency 15 28 24 22 25C 9 25C -40C 7 -40C 20 11 85C 85C 5 18 0 0.5 1 1.5 2 Frequency (GHz) 2 of 6 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS111011 SGC2363Z Typical Performance with Bias Tee, VD= 3V, ID= 26mA NF vs. Frequency 6.0 Current vs. Voltage 40 +25C 35 5.0 -40C +85C 25 4.0 Id (mA) NF (dB) 30 3.0 20 15 25C 10 2.0 85C 5 1.0 0 0.5 1 1.5 2 2.5 3 0 3.5 0 0.5 1 1.5 85C Gain (dB) S11 (dB) 3.5 4 16 -40C -15 -20 12 25C 8 -40C 85C 4 -25 -30 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 Frequency (GHz) |S12| over Frequency 3 3.5 4 3 3.5 4 -40C -10 S22 (dB) 85C -15 -20 -25 85C -15 -20 -25 -30 0 0.5 1 1.5 2 2.5 Frequency (GHz) DS111011 2.5 25C -5 -40C -10 2 |S22| over Frequency 0 25C -5 1.5 Frequency (GHz) 0 S12 (dB) 3 20 25C -10 2.5 |S21| over Frequency |S11| over Frequency 0 -5 2 Vd (V) Frequency (GHz) 3 3.5 4 -30 0 0.5 1 1.5 2 2.5 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 6 SGC2363Z Pin 3 1, 2, 4, 5 6 Function RF IN GND RF OUT/DC BIAS Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes as close to the device ground as possible to reduce ground inductance and achieve optimum RF performance. RF output and bias pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. SOT-363 PCB Pad Layout Dimensions in inches [millimeters] RF OUT RF IN Notes: 1. Provide a large ground pad area under device pins 1, 2, 4, and 5 with several plated-through holes placed as shown. 2. 1-2 ounce finished copper thickness is recommended. 3. RF I/O lines are 50Ω Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. 4 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS111011 SGC2363Z Application Schematic Vd Application Circuit Element Values 1uF 1000pF C3 L1 1,2 RF IN 3 C1 SGC-2363Z 4,5 Reference Designator 100-2000MHz 2000-4000MHz C1 1000pF 2.7pF C2 100pF 6.8pF C3 100pF 6.8pF L1 150nH 39nH RF OUT 6 C2 Evaluation Board Layout 1uF 1000pF C3 L1 C1 DS111011 C2 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 6 SGC2363Z Part Identification 6 5 4 1 2 3 Ordering Information 6 of 6 Ordering Code Description SGC2363Z 7” Reel with 3000 pieces SGC2363ZSQ Sample Bag with 25 pieces SGC2363ZSR 7” Reel with 100 pieces SGC2363ZPCK1 100MHz to 2000MHz PCBA with 5-piece sample bag SGC2363ZPCK2 2000MHz to 4000MHz PCBA with 5-piece sample bag 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS111011