SBB3089Z 50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK Package: SOT-89 Product Description Features RFMD’s SBB3089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. The SBB3089Z product is designed for high linearity 5V gain block applications that require excellent gain flatness, small size, and minimal external components. It is internally matched to 50. 30 Optimum Technology Matching® Applied S21 GaAs HBT Gain and Return Loss VS = 5V, IS = 42mA 20 GaAs MESFET Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C dB SiGe BiCMOS Si BiCMOS SiGe HBT 0 -10 S11 GaAs pHEMT Si CMOS -20 Si BJT S22 -30 GaN HEMT OIP3 =29.5dBm at 1950MHz Robust 1000V ESD, Class 1C HBM Applications 10 InGaP HBT Single Fixed 5V Supply Patented Self Bias Circuit and Thermal Design Gain=16.4dBm at 1950MHz P1dB =15.2dBm at 1950MHz 0 1 InP HBT 2 3 4 5 PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Wideband Instrumentation 6 Frequency (GHz) RF MEMS LDMOS Parameter Small Signal Gain Min. 15.1 14.9 Specification Typ. 16.6 16.4 16.3 15.6 15.2 15.4 30.0 29.5 29.5 21 25.5 3.9 4.2 42 Max. Unit Condition 18.1 17.9 dB 850MHz dB 1950MHz dB 2400MHz Output Power at 1dB Compression dBm 850MHz 14.2 dBm 1950MHz dBm 2400MHz Output Third Order Intercept Point dBm 850MHz 27.5 dBm 1950MHz dBm 2400MHz Input Return Loss 16 dB 1950MHz Output Return Loss 19 dB 1950MHz Noise Figure 4.9 dB 1950MHz Device Operating Voltage 4.3 V RDC =20, VS =5.0V Device Operating Current 38 46 mA RDC =20, VS =5.0V Operational Current Range 30 46 mA Per user preference via RDC Thermal Resistance 80 °C/W Junction to lead Test Conditions: VD =4.2V, ID =42mA, TL =25°C , OIP3 Tone Spacing=1MHz, RDC =20, Bias Tee Data, ZS =ZL =50, POUT per tone=-5dBm RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS130718 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 5 SBB3089Z Absolute Maximum Ratings Parameter Rating Max Device Current (lD) Unit 100 Max Device Voltage (VD) mA 6 V Max RF Input Power* (See Note) +20 dBm Max Junction Temperature (TJ) +150 °C -40 to +85 °C +150 °C Operating Temperature Range (TL) Max Storage Temperature ESD Rating - Human Body Model (HBM) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Class 1C Moisture Sensitivity Level MSL 2 *Note: Load condition ZL =50 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l and TL =TLEAD Typical RF Performance at Key Operating Frequencies (Bias Tee Data) Parameter Unit 100 MHz 500 MHz 850 MHz 1950 MHz 2140 MHz 2400 MHz 3500 MHz 16.1 Small Signal Gain dB 16.9 16.6 16.6 16.4 16.4 16.3 Output Third Order Intercept Point dBm 29.5 30.5 30.0 29.5 29.0 29.5 27.0 Output Power at 1dB Compression dBm 15.6 16.0 15.6 15.2 15.0 15.4 15.2 15.5 Input Return Loss dB 24.0 26.5 24.5 21.0 20.5 20.0 Output Return Loss dB 21.5 26.0 26.0 25.5 25.5 27.5 21.0 Reverse Isolation dB 19.5 19.0 19.5 19.5 19.5 19.5 19.5 Noise Figure dB 3.7 3.9 3.9 3.9 3.9 4.0 3.8 Test Conditions: VD =4.2V ID =42mA OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm RDC =20 TL =25°C ZS =ZL =50 Typical Performance with Bias Tees, VD =5V with RDC =20, ID =42mA OIP3 versus Frequency, (-5dBm/tone, 1MHz spacing) 34.0 P1dB versus Frequency 20.0 18.0 P1dB (dBm) OIP3 (dBm) 32.0 30.0 28.0 25°C -40°C 85°C 26.0 14.0 25°C -40°C 85°C 12.0 24.0 10.0 0.0 0.5 1.0 1.5 2.0 Frequency (GHz) 2 of 5 16.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS130718 SBB3089Z Typical Performance with Bias Tees, VS =5V, RDC =20, ID =42mA S11 versus Frequency S21 versus Frequency 0.0 20.0 -5.0 18.0 Gain (dB) S11 (dB) -10.0 -15.0 16.0 14.0 -20.0 25C -40C 85C -25.0 25C -40C 85C 12.0 -30.0 10.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.0 1.0 2.0 Frequency (GHz) 0.0 0.0 -5.0 -5.0 -10.0 -10.0 S22 (dB) S12 (dB) 4.0 5.0 6.0 S22 versus Frequency S12 versus Frequency -15.0 -15.0 -20.0 -20.0 25C -40C 85C -25.0 25C -40C 85C -25.0 -30.0 -30.0 0.0 1.0 2.0 3.0 4.0 5.0 0.0 6.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) Frequency (GHz) DCIV NF versus Frequency 100.0 6.0 90.0 5.5 80.0 5.0 70.0 4.5 ID (mA) NF (dB) 3.0 Frequency (GHz) 4.0 3.5 60.0 50.0 40.0 30.0 3.0 20.0 25°C 2.5 -40°C 25°C 85°C 10.0 85°C 0.0 2.0 0.0 DS130718 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3.0 3.5 4.0 4.5 5.0 5.5 3 of 5 SBB3089Z Application Schematic Vs RDC .1uF 1000pF L1 4 RF IN 1 SBB-3089Z C1 RF OUT 3 C2 2 Application Circuit Element Values Reference Designator 500MHz to 3500MHz C1 1000pF C2 68pF L1 48nH 0805HQ Coilcraft Evaluation Board Layout Mounting Instructions 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31mm thick FR-4 board with 1 ounce copper on both sides. Recommended Bias Resistor Values for ID =42mA RDC =(VS -VD)/ID 4 of 5 Supply Voltage (VS) 5V 6V 8V 10V 12V RDC 20 43 91 139 187 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS130718 SBB3089Z Pin 1 Function RF IN 2, 4 GND 3 RF OUT/ DC BIAS Description RF input pin.This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes as close to the device ground leads as possible to reduce ground inductance and achieve optimum RF performance. RF output and bias pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Part Identification Suggested Pad Layout Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. Ordering Information DS130718 Ordering Code Description SBB3089Z 7” Reel with 1000 pieces SBB3089ZSQ Sample bag with 25 pieces SBB3089ZSR 7” Reel with 100 pieces SBB3089ZPCK1 500MHz to 3500MHz PCBA with 5-piece sample bag 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 5