Low Profile, Low Cost, Fully Integrated, Monolithic

(AN-60-016)
Low Profile, Low Cost, Fully Integrated Monolithic Microwave
Amplifiers
Engineering Department
Mini-Circuits,
Brooklyn, NY 11235
Introduction
Monolithic microwave amplifiers are widely used in the industry for signal amplification.
The majority of these amplifiers are specified to operate with fixed current. In the real world
of low voltage supplies, fixed current is difficult to realize. Normally, a constant-current
source is approximated by a voltage source, RF choke and a resistor. In addition, DC
blocking capacitors need to be added at the input and output of such amplifiers. All these
external elements consume real estate on the user’s PC board, and increase the component
count, cost and complexity of the design. To address these issues, Mini-Circuits is
introducing a series of fully integrated amplifiers, which operate with a fixed voltage source.
Besides being easy to use, these amplifiers have very low profile and extremely high
isolation. The later feature helps an amplifier to be used as an active isolator. This article
presents the performance and describes the advantages of this new series of amplifiers.
Biasing of Monolithic Microwave Amplifiers
Fig 1 shows the biasing circuit of most of the commercially available monolithic amplifiers.
These amplifiers are designed for fixed current operation, and the DC bias current has to be
applied at the RF output terminal. Therefore, it is important to ensure that the biasing circuit
does not load the RF output (by proper selection of RFC and Rbias), and that the DC current
does not go to the RF load (Cblock prevents it). The combined reactance of RFC and Rbias
should be greater than 500 ohms to prevent reduction of gain and power output. The RFC
should also have its resonant frequency higher than the intended frequency of operation. In
addition, a DC blocking capacitor is needed at the input to prevent DC current flow back into
the signal source. A minimum of 2 V drop across Rbias is required for proper operation.
Fig 1: Biasing circuit of most monolithic microwave amplifiers
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The new MNA series of monolithic microwave amplifiers that Mini-Circuits is introducing
are well matched to 50 ohms; they are wide band and much simpler to use. This makes them
very user friendly. Unlike current-operated amplifiers, the new series has separate terminals
for the RF output and DC supply. In addition, these new amplifiers are designed to operate
with a fixed voltage source rather than a fixed current source. Fig 2a shows the primary
biasing circuit of the new amplifier series. Note that the only external component is a bypass
capacitor for the DC supply, which provides an RF ground at the amplifier DC terminal. The
capacitor, as well as the short between Pins 7 and 8 should be located as close as possible to
the MNA amplifier. To ensure unconditional stability (a concern only for Model MNA-4),
the alternative biasing circuit in Fig 2b is recommended. This alternative circuit has the
advantage, for all models, of preventing possible resonance between internal and external
biasing components. Chip components of 0402 or 0603 size are recommended, and should be
located within 100 mils (2.5mm) of the amplifier package. A Test Board that includes the
Fig 2b biasing circuit is available; the Mini-Circuits Specification Sheet shows the
recommended PC board layout. The effect of biasing circuit on electrical performance is
described later in this Application Note.
2a: Primary Biasing Circuit
2b: Alternative Biasing Circuit
Fig 2: Biasing circuits of new monolithic amplifier
The physical dimensions of these amplifiers are 3mm x 3mm x 0.89mm, or 0.118” x 0.118” x
0.035”. This small size saves board space. The MNA amplifiers have a bottom paddle, which
is soldered directly to the PC board of the customer’s circuit to provide lowest thermal
resistance. Fig 3 illustrates the new MNA amplifier.
Fig 3: Photograph of MNA amplifier
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Electrical Performance
Table 1 shows the typical specifications of these amplifiers. One significant feature is that
they can be operated over a wide voltage range, 2.8 to 5V. This makes them useable for
battery powered applications.
Table 1. Specifications (typical) of MNA series amplifiers
Supply Voltage: 2.8 to 5V
Model
Freq
(GHz)
Gain
1 dB Comp
(dB)
(dBm) at 5V
Noise
Figure
IP3 (dBm)
Directivity
I-DC
at 5V
(Isolation Gain)
(ma) typ.
(dB)
MNA-2
0.5-2.5
12
17
5.4
27
20
76
MNA-3
0.5-2.5
15
9.5
4.9
21
17
30
MNA-4
0.5-2.5
16
17
4.8
29
20
75
MNA-5
0.5-2.5
20
10
3.5
20
17
28
MNA-6
0.5-2.5
23
17
2.9
27
17
72
MNA-7
1.5-5.9
17
15.5
6.9
28.5
20
73
Thermal resistance, 780 C/W.
The MNA series offers a choice of gains and power output to aid the circuit designer.
Detailed specifications of these amplifiers can be found at the Mini-Circuits web site:
http://www.minicircuits.com
MNA-7 is a high frequency amplifier operating over 1.5 to 5.9GHz. This wide frequency
range covers applications from PCS at the low end to satellite communication at the high
end, and a variety of other applications in between such as defense, ISM etc. MNA-7 has all
the features of its low frequency counterparts.
Fig 4 shows the gain of the MNA-4 amplifier, for example, at two different voltages: 2.8 and
5V. Note that the gain change is only 2dB for such a drastic change of supply voltage. Fig 5
shows the reverse isolation of the same amplifier; it is in the range of 30 to 45dB across the
band. This is equivalent to an active directivity of 15 to 30dB, which enables these amplifiers
to be used as low cost active isolators. Some applications for high isolation amplifiers are
reducing load pull of voltage controlled oscillators, providing a broadband interface at the
input and output of filters that are reflective in their stop-bands, and any situation where
mismatch could degrade system performance. Figs 6 and 7 show the VSWR at input and
output. The amplifiers are well matched over 700 to 2500 MHz. This makes them extremely
simple to use. Fig 8 shows the 1-dB output power compression of the MNA-4 amplifier.
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Note that the trade-off of output power with choice of supply voltage is well defined; the
difference is about 5dB at low frequency and 2.5dB at the high frequency.
MNA-4
GAIN
19
2.8V
5V
17
GAIN (dB)
15
13
11
9
7
500
700
900 1100 1300 1500 1700 1900 2100 2300 2500 2700
FREQUENCY (MHz)
Fig. 4
MNA-4
ISOLATION
50
2.8V
5V
ISOLATION (dB)
45
40
35
30
25
500
700
900 1100 1300 1500 1700 1900 2100 2300 2500 2700
FREQUENCY (MHz)
Fig. 5
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MNA-4
VSWR (IN)
8
2.8V
7
5V
6
VSWR
5
4
3
2
1
0
500
700
900 1100 1300 1500 1700 1900 2100 2300 2500 2700
FREQUENCY (MHz)
Fig. 6
MNA-4
VSWR (OUT)
4.5
4.0
3.5
VSWR
3.0
2.5
2.0
1.5
1.0
0.5
2.8V
5V
0.0
500
700
900 1100 1300 1500 1700 1900 2100 2300 2500 2700
FREQUENCY (MHz)
Fig. 7
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MNA-4
1 dB COMPRESSION
22
COMPRESSION (dBm)
20
18
16
14
12
10
8
6
2.8V
5V
4
500 700 900 1100 1300 1500 1700 1900 2100 2300 2500 2700 2900
FREQUENCY(MHz)
Fig. 8
Effect of Biasing Circuit on Electrical Performance
Figs 9a, b, c through 14a, b, c show gain, input return loss, and output return loss of Models
MNA-2 through MNA-7 vs. frequency out to 6 GHz. Each graph plots the performance of 2
samples using the primary bias circuit (Fig 2a), as well as the same 2 samples using the
alternative biasing circuit (Fig.2b).
MNA-2 and MNA-6 have slightly lower gain up to 3 GHz and up to 2 GHz respectively,
with the alternative biasing circuit. MNA-3, MNA-4, and MNA-5 show decreased gain with
the alternative biasing circuit only below 1 GHz, and the effect is to smooth the response by
eliminating a tendency of the gain to peak. MNA-7 does not show a significant difference in
the gain, but the alternative biasing circuit provides smoother return loss response at high
frequencies.
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MNA-2
GAIN
MNA-3
GAIN
UNIT1 PRIMARY BIAS
UNIT 2 PRIMARY BIAS
UNIT1 ALTERNATIVE BIAS
UNIT2 ALTERNATIVE BIAS
20.0
14.0
15.0
GAIN (dB)
GAIN (dB)
UNIT 1 ALTERNATIVE BIAS
10.0
10.0
8.0
6.0
5.0
0.0
4.0
-5.0
2.0
-10.0
0.0
-15.0
0
1000
2000
3000
4000
FREQUENCY (MHz)
FIG.9A
5000
6000
0
1000
2000
3000
4000
FREQUENCY (MHz)
FIG.10A
5000
6000
UNIT 1 PRIMARY BIAS
UNIT 1 PRIMARY BIAS
MNA-2
RETURN LOSS (INPUT)
MNA-3
RETURN LOSS (INPUT)
UNIT 2 PRIMARY BIAS
UNIT 1 ALTERNATIVE BIAS
UNIT 2 ALTERNATIVE BIAS
0.0
0.0
5.0
5.0
RETURN LOSS (dB)
RETURN LOSS (dB)
UNIT 2 PRIMARY BIAS
UNIT2 ALTERNATIVE BIAS
16.0
12.0
10.0
15.0
20.0
25.0
30.0
35.0
UNIT 2 PRIMARY BIAS
UNIT 1 ALTERNATIVE BIAS
UNIT 2 ALTERNATIVE BIAS
10.0
15.0
20.0
25.0
30.0
35.0
40.0
40.0
0
1000
2000
3000
4000
FREQEUNCY (MHz)
FIG.9B
MNA-2
RETURN LOSS (OUTPUT)
5000
6000
0
UNIT 2 PRIMARY BAIS
UNIT 1 ALTERNATIVE BIAS
5.0
RETURN LOSS (dB)
5.0
15.0
20.0
25.0
30.0
25.0
30.0
35.0
45.0
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6000
UNIT 2 PRIMARY BAIS
UNIT 1 ALTERNATIVE BIAS
20.0
40.0
5000
UNIT 1 PRIMARY BIAS
15.0
40.0
2000
3000
4000
FREQUENCY (MHz)
FIG.9C
6000
10.0
35.0
1000
5000
UNIT 2 ALTERNATIVE BIAS
0.0
10.0
2000
3000
4000
FREQEUNCY (MHz)
FIG.10B
MNA-3
RETURN LOSS (OUTPUT)
0.0
0
1000
UNIT 1 PRIMARY BIAS
UNIT 2 ALTERNATIVE BIAS
RETURN LOSS (dB)
UNIT1 PRIMARY BIAS
0
1000
2000
3000
4000
FREQUENCY (MHz)
FIG.10C
5000
6000
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MNA-4
GAIN
MNA-5
GAIN
UNIT1 PRIMARY BIAS
UNIT 2 PRIMARY BIAS
UNIT 1 ALTERNATIVE BIAS
25.0
15.0
20.0
10.0
15.0
GAIN (dB)
GAIN (dB)
UNIT2 ALTERNATIVE BIAS
20.0
5.0
0.0
10.0
5.0
-5.0
0.0
-10.0
-5.0
0
1000
2000
3000
4000
FREQUENCY (MHz)
FIG.11A
5000
6000
0
1000
2000
3000
4000
FREQUENCY (MHz)
FIG.12A
UNIT 1 PRIMARY BIAS
MNA-4
RETURN LOSS (INPUT)
MNA-5
RETURN LOSS (INPUT)
UNIT 2 PRIMARY BIAS
UNIT 1 ALTERNATIVE BIAS
UNIT 2 ALTERNATIVE BIAS
0.0
0.0
5.0
5.0
RETURN LOSS (dB)
RETURN LOSS (dB)
UNIT1 PRIMARY BIAS
UNIT 2 PRIMARY BIAS
UNIT 1 ALTERNATIVE BIAS
UNIT2 ALTERNATIVE BIAS
10.0
15.0
20.0
25.0
30.0
5000
6000
UNIT 1 PRIMARY BIAS
UNIT 2 PRIMARY BIAS
UNIT 1 ALTERNATIVE BIAS
UNIT 2 ALTERNATIVE BIAS
10.0
15.0
20.0
25.0
30.0
35.0
35.0
0
1000
2000
3000
4000
FREQEUNCY (MHz)
FIG.11B
MNA-4
RETURN LOSS (OUTPUT)
5000
6000
0
1000
2000
3000
4000
FREQEUNCY (MHz)
FIG.12B
MNA-5
RETURN LOSS (OUTPUT)
UNIT 1 PRIMARY BIAS
UNIT 2 PRIMARY BAIS
UNIT 1 ALTERNATIVE BIAS
UNIT 2 ALTERNATIVE BIAS
6000
UNIT 1 PRIMARY BIAS
UNIT 2 PRIMARY BAIS
UNIT 1 ALTERNATIVE BIAS
UNIT 2 ALTERNATIVE BIAS
0.0
0.0
5000
RETURN LOSS (dB)
RETURN LOSS (dB)
5.0
5.0
10.0
15.0
20.0
10.0
15.0
20.0
25.0
30.0
35.0
25.0
0
1000
2000
3000
4000
FREQUENCY (MHz)
FIG.11C
5000
6000
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0
1000
2000
3000
4000
FREQUENCY (MHz)
FIG.12C
5000
6000
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MNA-6
GAIN
UNIT1 PRIMARY BIAS
UNIT 2 PRIMARY BIAS
UNIT1 ALTERNATIVE BIAS
UNIT2 ALTERNATIVE BIAS
UNIT1 PRIMARY BIAS
MNA-7
GAIN
UNIT 2 PRIMARY BIAS
UNIT1 ALTERNATIVE BIAS
UNIT2 ALTERNATIVE BIAS
25.0
30.0
20.0
15.0
10.0
GAIN (dB)
20.0
15.0
10.0
5.0
0.0
-5.0
-10.0
-15.0
5.0
-20.0
-25.0
0.0
0
1000
2000
3000
4000
FREQUENCY (MHz)
FIG.13A
5000
0
6000
1000
2000
3000
4000
5000
6000
FREQUENCY (MHz)
FIG.14A
UNIT 1 PRIMARY BIAS
MNA-6
RETURN LOSS (INPUT)
MNA-7
RETURN LOSS (INPUT)
UNIT 2 PRIMARY BIAS
UNIT 1 ALTERNATIVE BIAS
UNIT 2 ALTERNATIVE BIAS
UNIT 1 PRIMARY BIAS
UNIT 2 PRIMARY BIAS
UNIT 1 ALTERNATIVE BIAS
UNIT 2 ALTERNATIVE BIAS
0.0
0.0
2.0
RETURN LOSS (dB)
RETURN LOSS (dB)
5.0
10.0
15.0
20.0
25.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
30.0
0
1000
2000
3000
4000
FREQEUNCY (MHz)
FIG.13B
MNA-6
RETURN LOSS (OUTPUT)
5000
0
6000
1000
2000
3000
4000
FREQEUNCY (MHz)
FIG.14B
MNA-7
RETURN LOSS (OUTPUT)
UNIT 1 PRIMARY BIAS
UNIT 2 PRIMARY BAIS
UNIT 1 ALTERNATIVE BIAS
5000
6000
UNIT 1 PRIMARY BIAS
UNIT 2 PRIMARY BAIS
UNIT 1 ALTERNATIVE BIAS
UNIT 2 ALTERNATIVE BIAS
UNIT 2 ALTERNATIVE BIAS
0.0
0.0
5.0
RETURN LOSS (dB)
5.0
RETURN LOSS (dB)
GAIN (dB)
25.0
10.0
15.0
20.0
25.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
30.0
0
1000
2000
3000
4000
FREQUENCY (MHz)
FIG.13C
5000
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6000
0
1000
2000
3000
4000
FREQUENCY (MHz)
FIG. 14C
5000
6000
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Reliability
The thermal resistance of these amplifiers, from junction to case, is 780 C/W. For the 17-dBm
output MNA amplifiers this results in a junction temperature rise of 350 C above the case. At
850 C case temperature the junction temperature is thus 1200 C, which makes the amplifier
extremely reliable. When soldered on a PCB the amplifier case temperature typically rises
100 C above ambient, making the junction temperature 1300 C. From Fig 15 the MTTF is
around 2000 years at this temperature. For the lower power MNA models, junction
temperature is lower so there is no need for concern about MTTF, as it is extremely high.
MTTF vs. Junction Temp. (MNA)
10,000,000
MTTF (years)
1,000,000
100,000
10,000
1,000
100
60
70
80
90
100
110
120
130
140
150
Junction Temperature (degrees C)
Fig 15: MTTF vs. junction temperature
Conclusions
Mini-Circuits has introduced a series of new amplifiers to cover 0.5 to 5.9 GHz. These
amplifiers have a separate terminal for DC, and require no external matching, biasing or DC
blocking elements. They operate with fixed DC voltage and have very high reverse isolation.
These tiny amplifiers will save circuit space and are simpler to use.
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IMPORTANT NOTICE
© 2015 Mini-Circuits
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informational and guideline purposes only. Mini-Circuits assumes no responsibility for errors or omissions in this document or for any information
contained herein.
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updates or corrections to the Materials or Mini-Circuits’ failure to do so.
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regard, customers are responsible for consulting with their own engineers and other appropriate professionals who are familiar with the specific products
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made. Accordingly, Mini-Circuits assumes no liability therefor.
In addition, your use of this document and the information contained herein is subject to Mini-Circuits’ standard terms of use, which are available at MiniCircuits’ website at www.minicircuits.com/homepage/terms_of_use.html.
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