SFS1826 – SFS1829 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Designer’s Data Sheet 1.6 AMP Part Number/Ordering Information 1/ SFS182 ___ ___ ___ │ │ │ │ │ │ │ │ └ │ │ │ │ │ └ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV S = S Level Package /18 = TO-18 Voltage/Family 6 = 200V 7 = 250V 8 = 300V 9 = 400V SILICON CONTROLLED RECTIFIER 200 - 400 Volts FEATURES: Low-Level Gate Characteristics Low Holding Current IH = 5 mA (Max) @ 25oC Anode Common to Case Hermetically Sealed TX, TXV, S-Level Screening Available – Consult Factory MAXIMUM RATINGS3/ Symbol Value Units VDRM VRRM 200 250 300 400 Volts VRSM 300 350 400 500 Volts IT (RMS) 1.6 Amps IT(AV) 1.0 0.7 Amps ITSM 15 Amps PGM 0.1 Watts PG(AV) 0.01 Watts Peak Gate Current IGM 0.1 Amps Peak Gate Voltage VGM 6.0 Volts TJ -65 to +200 °C Storage Temperature Range Tstg -65 to +200 °C Thermal Resistance, Junction to Case RθJC 72 °C/W Peak Repetitive Reverse Voltage and DC Blocking Voltage SFS1826 SFS1827 SFS1828 SFS1829 Non-Repetitive Peak Reverse Blocking Voltage (t < 5.0 ms) SFS1826 SFS1827 SFS1828 SFS1829 RMS On-State Current (All Conduction Angles) Average On-State Current Peak Non-Repetitive Surge Current (One Cycle, 60 Hz, TC = 80°C) Peak Gate Power Average Gate Power Operating Junction Temperature Range TC = 50°C TA = 25°C NOTES: TO-18 (/18) 1/ 2/ 3/ 4/ 5/ For ordering information, price, operating curves, and availability- Contact factory. Screening based on MIL-PRF-19500. Screening flows available on request. Unless otherwise specified, all electrical characteristics @25°C, RGK = 1K Ω. RGK current is not included in measurement. Thyristor devices shall not be tested with a constant current source for forward and reverse blocking capability such that the voltage applies exceeds the rated blocking voltage. 6/ Thyristor devices shall not have a positive bias applied to the gate concurrently with a negative potential applied to the anode. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: SCR005B DOC Solid State Devices, Inc. SFS1826 – SFS1829 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com ELECTRICAL CHARACTERISTICS3/ Peak Reverse Blocking Current Rated VRRM Peak Forward Blocking Current Rated VDRM, RGK = 1KΩ Peak On-State Voltage IF = 1.6 A Peak Gate Trigger Current VD = 6 VDC, RL = 100 Ω, TC = -65oC Gate Trigger Voltage VD = 6 VDC, RL = 100 Ω , TC = 25oC VD = 6 VDC, RL = 100 Ω, TC = -65oC Holding Current VD = 6 VDC VD = 6 VDC, TC = -65oC Symbol Min Max Unit IRRM –– 1 μA IDRM –– 1 μA VTM –– 1.3 Volts IGT –– 350 μA VGT –– –– 0.7 0.9 Volts IH –– –– 5 2.0 mA Case Outline: TO-18 PIN 1: ANODE PIN 2: CATHODE PIN 3: GATE Available Part Numbers: SFS1826/18; SFS1827/18; SFS1828/18; SFS1829/18 NOTES: 1/ 2/ 3/ 4/ 5/ For ordering information, price, operating curves, and availability- Contact factory. Screening based on MIL-PRF-19500. Screening flows available on request. Unless otherwise specified, all electrical characteristics @25°C, RGK = 1K Ω. RGK current is not included in measurement. Thyristor devices shall not be tested with a constant current source for forward and reverse blocking capability such that the voltage applies exceeds the rated blocking voltage. 6/ Thyristor devices shall not have a positive bias applied to the gate concurrently with a negative potential applied to the anode. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: SCR005B DOC